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1. 发明授权

US09349902B2 System and method for reducing irregularities on the surface of a backside illuminated photodiode 有权
标题翻译：用于减少背面照射光电二极管表面的凹凸的系统和方法
公开(公告)号：US09349902B2
公开(公告)日：2016-05-24
申请号：US13486833
申请日：2012-06-01
申请人： Shiu-Ko JangJian , Kei-Wei Chen , Chi-Cherng Jeng , Min Hao Hong
发明人： Shiu-Ko JangJian , Kei-Wei Chen , Chi-Cherng Jeng , Min Hao Hong
IPC分类号： H01L31/00 , H01L31/103 , H01L29/36 , H01L31/18
CPC分类号： H01L31/103 , H01L29/36 , H01L31/1037 , H01L31/18 , H01L31/1812 , Y02E10/50
摘要： System and method for processing a semiconductor device surface to reduce dark current and white pixel anomalies. An embodiment comprises a method applied to a semiconductor or photodiode device surface adjacent to a photosensitive region, and opposite a side having circuit structures for the device. A doped layer may optionally be created at a depth of less than about 10 nanometers below the surface of the substrate and may be doped with a boron concentration between about 1E13 and 1E16. An oxide may be created on the substrate using a temperature sufficient to reduce the surface roughness below a predetermined roughness threshold, and optionally at a temperature between about 300° C. and 500° C. and a thickness between about 1 nanometer and about 10 nanometers. A dielectric may then be created on the oxide, the dielectric having a refractive index greater than a predetermined refractive threshold, optionally at least about 2.0.
摘要翻译：用于处理半导体器件表面以减少暗电流和白色像素异常的系统和方法。一个实施例包括应用于与光敏区域相邻的半导体或光电二极管器件表面的方法，以及与该器件的电路结构相反的一侧。掺杂层可以任选地在衬底表面下方小于约10纳米的深度处产生，并且可以掺杂在约1E13和1E16之间的硼浓度。可以使用足以将表面粗糙度降低到预定粗糙度阈值以下且可选地在约300℃至500℃之间的温度和约1纳米至约10纳米的厚度的温度在基底上产生氧化物。然后可以在氧化物上产生电介质，电介质具有大于预定折射阈值的折射率，任选至少约2.0。

2. 发明授权

US08946083B2 In-situ formation of silicon and tantalum containing barrier 有权
标题翻译：硅和钽的屏障原位形成
公开(公告)号：US08946083B2
公开(公告)日：2015-02-03
申请号：US13167857
申请日：2011-06-24
申请人： Shiu-Ko JangJian , Ting-Chun Wang , Szu-An Wu
发明人： Shiu-Ko JangJian , Ting-Chun Wang , Szu-An Wu
IPC分类号： H01L21/44 , H01L21/3105 , H01L21/768 , H01L23/48
CPC分类号： H01L23/4827 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76843 , H01L21/76855 , H01L21/76898 , H01L23/481 , H01L23/50 , H01L2924/0002 , H01L2924/00
摘要： A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.
摘要翻译：一种方法包括在电介质层中形成开口，并且在介电层的表面上形成富硅层。富硅层的一部分延伸到开口中并与电介质层接触。在富含硅层上方形成含钽层。进行退火以使含钽层与富硅层反应，从而形成含钽和硅的层。

3. 发明授权

US08847286B2 Image sensor and method of manufacturing 有权
标题翻译：图像传感器及制造方法
公开(公告)号：US08847286B2
公开(公告)日：2014-09-30
申请号：US13349221
申请日：2012-01-12
申请人： Shiu-Ko Jangjian , Kei-Wei Chen , Szu-An Wu , Ying-Lang Wang
发明人： Shiu-Ko Jangjian , Kei-Wei Chen , Szu-An Wu , Ying-Lang Wang
IPC分类号： H01L27/148
CPC分类号： H01L27/14621 , H01L27/14623 , H01L27/1464
摘要： An image sensor includes a substrate having opposite first and second sides, a multilayer structure on the first side of the substrate, and a photo-sensitive element on the second side of the substrate. The photo-sensitive element is configured to receive light that is incident upon the first side and transmitted through the multilayer structure and the substrate. The multilayer structure includes first and second light transmitting layers. The first light transmitting layer is sandwiched between the substrate and the second light transmitting layer. The first light transmitting layer has a refractive index that is from 60% to 90% of a refractive index of the substrate. The second light transmitting layer has a refractive index that is lower than the refractive index of the first light transmitting layer and is from 40% to 70% of the refractive index of the substrate.
摘要翻译：图像传感器包括具有相对的第一和第二侧的基板，在基板的第一侧上的多层结构和在基板的第二侧上的感光元件。光敏元件被配置为接收入射在第一侧并透过多层结构和基板的光。多层结构包括第一和第二透光层。第一透光层夹在基板和第二透光层之间。第一透光层的折射率为基板折射率的60％至90％。第二透光层的折射率低于第一透光层的折射率，为基板的折射率的40％〜70％。

4. 发明申请

US20130241018A1 Grids in Backside Illumination Image Sensor Chips and Methods for Forming the Same 有权
公开(公告)号：US20130241018A1
公开(公告)日：2013-09-19
申请号：US13420847
申请日：2012-03-15
申请人： Shiu-Ko JangJian , Min Hao Hong , Ting-Chun Wang , Chung-Ren Sun
发明人： Shiu-Ko JangJian , Min Hao Hong , Ting-Chun Wang , Chung-Ren Sun
IPC分类号： H01L31/0232 , H01L31/18 , H01L27/146
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H01L27/14683
摘要： A device includes a semiconductor substrate having a front side and a backside, a photo-sensitive device disposed on the front side of the semiconductor substrate, and a first and a second grid line parallel to each other. The first and the second grid lines are on the backside of, and overlying, the semiconductor substrate. The device further includes an adhesion layer, a metal oxide layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal oxide layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.

5. 发明申请

US20130193538A1 Methods and Apparatus for an Improved Reflectivity Optical Grid for Image Sensors 有权
标题翻译：用于图像传感器的改进的反射光学网格的方法和装置
公开(公告)号：US20130193538A1
公开(公告)日：2013-08-01
申请号：US13363280
申请日：2012-01-31
申请人： Shiu-Ko JangJian , Kei-Wei Chen , Ying-Lang Wang
发明人： Shiu-Ko JangJian , Kei-Wei Chen , Ying-Lang Wang
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/022441 , H01L27/14623 , H01L27/14629 , H01L27/1464 , H01L31/022433
摘要： An improved reflectivity optical grid for image sensors. In an embodiment, a backside illuminated CIS device includes a semiconductor substrate having a pixel array area comprising a plurality of photosensors formed on a front side surface of the semiconductor substrate, each of the photosensors forming a pixel in the pixel array area; an optical grid material disposed over a backside surface of the semiconductor substrate, the optical grid material patterned to form an optical grid that bounds each of the pixels in the pixel array area and extending above the semiconductor substrate, the optical grid having sidewalls and a top portion; and a highly reflective coating formed over the optical grid, comprising a pure metal coating of a metal that is at least 99% pure, and a high-k dielectric coating over the pure metal coating that has a refractive index of greater than about 2.0. Methods are also disclosed.
摘要翻译：用于图像传感器的改进的反射光栅。在一个实施例中，背面照明的CIS器件包括具有像素阵列区域的半导体衬底，该像素阵列区域包括形成在半导体衬底的前侧表面上的多个光电传感器，每个光电传感器在像素阵列区域中形成像素; 设置在半导体衬底的背侧表面上的光栅格材料，所述光栅格材料被图案化以形成限定像素阵列区域中的每个像素并在半导体衬底上方延伸的光栅，所述光栅具有侧壁和顶部一部分; 以及形成在光栅上的高反射涂层，包括纯金属的纯金属涂层，其纯度至少为99％，纯金属涂层上的高k电介质涂层具有大于约2.0的折射率。还公开了方法。

6. 发明申请

US20130075831A1 METAL GATE STACK HAVING TIALN BLOCKING/WETTING LAYER 审中-公开
标题翻译：金属门盖有天然气阻塞/湿润层
公开(公告)号：US20130075831A1
公开(公告)日：2013-03-28
申请号：US13244355
申请日：2011-09-24
申请人： Shiu-Ko JangJian , Szu-An Wu , Ying-Lang Wang , Chi-Wen Liu
发明人： Shiu-Ko JangJian , Szu-An Wu , Ying-Lang Wang , Chi-Wen Liu
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66545
摘要： A metal gate stack having a TiAlN blocking/wetting layer, and methods of manufacturing the same, are disclosed. In an example, an integrated circuit device includes a semiconductor substrate and a gate stack disposed over the semiconductor substrate. The gate stack includes a gate dielectric layer disposed over the semiconductor substrate; a work function layer disposed over the gate dielectric layer; a multi-function wetting/blocking layer disposed over the work function layer, wherein the multi-function wetting/blocking layer is a titanium aluminum nitride layer; and a conductive layer disposed over the multi-function wetting/blocking layer.
摘要翻译：公开了具有TiAlN阻挡/润湿层的金属栅极堆叠及其制造方法。在一个示例中，集成电路器件包括设置在半导体衬底上的半导体衬底和栅极堆叠。栅极堆叠包括设置在半导体衬底上的栅介质层; 设置在所述栅极介电层上的功函数层; 设置在所述功函数层上的多功能润湿/阻挡层，其中所述多功能润湿/阻挡层是氮化铝钛层; 以及设置在多功能润湿/阻挡层上的导电层。

7. 发明授权

US09112090B2 UV radiation recovery of image sensor 有权
标题翻译：图像传感器的紫外线辐射恢复
公开(公告)号：US09112090B2
公开(公告)日：2015-08-18
申请号：US13476717
申请日：2012-05-21
申请人： Chung-Ren Sun , Shiu-Ko JangJian , Chun-Jung Chang , Tong-Her Sher
发明人： Chung-Ren Sun , Shiu-Ko JangJian , Chun-Jung Chang , Tong-Her Sher
IPC分类号： H01L31/0232 , H01L31/18 , H01L31/103 , H01L27/146 , H01L21/768
CPC分类号： H01L31/103 , H01L21/76814 , H01L21/76825 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14698 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of an embodiment comprises forming a dielectric layer on a first side of an image sensor substrate, and exposing the dielectric layer to ultraviolet (UV) radiation. The image sensor substrate comprises a photo diode. A structure of an embodiment comprises a substrate and a charge-less dielectric. The substrate comprises a photo diode. The charge-less dielectric layer is on a first side of the substrate, and a total charge of the charge-less dielectric results in an average voltage drop of less than 0.2 V across the charge-less dielectric layer.
摘要翻译：实施例的方法包括在图像传感器基板的第一侧上形成电介质层，并将介电层暴露于紫外线（UV）辐射。图像传感器基板包括光电二极管。实施例的结构包括基板和无电荷电介质。衬底包括光电二极管。无电荷介电层位于衬底的第一侧上，无电荷电介质的总电荷导致无电荷介电层的平均电压降低于0.2V。

8. 发明授权

US08889461B2 CIS image sensors with epitaxy layers and methods for forming the same 有权
标题翻译：具有外延层的CIS图像传感器及其形成方法
公开(公告)号：US08889461B2
公开(公告)日：2014-11-18
申请号：US13620322
申请日：2012-09-14
申请人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Chih-Cherng Jeng
发明人： Shiu-Ko JangJian , Min Hao Hong , Kei-Wei Chen , Chih-Cherng Jeng
IPC分类号： H01L31/113 , H01L27/146
CPC分类号： H01L27/14645 , H01L27/14612 , H01L27/14616 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14689 , H01L29/16 , H01L31/028 , H01L31/103 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method includes performing a first epitaxy to grow a first epitaxy layer of a first conductivity type, and performing a second epitaxy to grow a second epitaxy layer of a second conductivity type opposite the first conductivity type over the first epitaxy layer. The first and the second epitaxy layers form a diode. The method further includes forming a gate dielectric over the first epitaxy layer, forming a gate electrode over the gate dielectric, and implanting a top portion of the first epitaxy layer and the second epitaxy layer to form a source/drain region adjacent to the gate dielectric.
摘要翻译：一种方法包括执行第一外延以生长第一导电类型的第一外延层，以及执行第二外延以在第一外延层上生长与第一导电类型相反的第二导电类型的第二外延层。第一和第二外延层形成二极管。该方法还包括在第一外延层上形成栅极电介质，在栅极电介质上方形成栅电极，以及注入第一外延层和第二外延层的顶部部分，以形成与栅极电介质相邻的源极/漏极区域。

9. 发明授权

US08748885B2 Soft material wafer bonding and method of bonding 有权
标题翻译：软材料晶圆接合和粘合方法
公开(公告)号：US08748885B2
公开(公告)日：2014-06-10
申请号：US13371198
申请日：2012-02-10
申请人： Tung-Ti Yeh , Chung-Yi Huang , Ya Wen Wu , Hui Mei Jao , Ting-Chun Wang , Shiu-Ko JangJian , Chia-Hung Chung
发明人： Tung-Ti Yeh , Chung-Yi Huang , Ya Wen Wu , Hui Mei Jao , Ting-Chun Wang , Shiu-Ko JangJian , Chia-Hung Chung
IPC分类号： H01L29/12
CPC分类号： H01L21/2007 , H01L21/67092 , H01L27/1464
摘要： A semiconductor device including a first wafer assembly having a first substrate and a first oxide layer over the first substrate. The semiconductor device further includes a second wafer assembly having a second substrate and a second oxide layer over the second substrate. The first oxide layer and the second oxide layer are bonded together by van der Waals bonds or covalent bonds. A method of bonding a first wafer assembly and a second wafer assembly including forming a first oxide layer over a first substrate. The method further includes forming a second oxide layer over a second wafer assembly. The method further includes forming van der Waals bonds or covalent bonds between the first oxide layer and the second oxide layer.
摘要翻译：一种半导体器件，包括具有第一衬底和第一衬底上的第一氧化物层的第一晶片组件。半导体器件还包括第二晶片组件，其具有第二衬底和在第二衬底上的第二氧化物层。第一氧化物层和第二氧化物层通过范德华力键或共价键键合在一起。一种接合第一晶片组件和第二晶片组件的方法，包括在第一衬底上形成第一氧化物层。该方法还包括在第二晶片组件上形成第二氧化物层。该方法还包括在第一氧化物层和第二氧化物层之间形成范德华氏键或共价键。

10. 发明申请

US20130193541A1 UV Radiation Recovery of Image Sensor 有权
标题翻译：图像传感器的紫外线辐射恢复
公开(公告)号：US20130193541A1
公开(公告)日：2013-08-01
申请号：US13476717
申请日：2012-05-21
申请人： Chung-Ren Sun , Shiu-Ko JangJian , Chun-Jung Chang , Tong-Her Sher
发明人： Chung-Ren Sun , Shiu-Ko JangJian , Chun-Jung Chang , Tong-Her Sher
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/103 , H01L21/76814 , H01L21/76825 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14698 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of an embodiment comprises forming a dielectric layer on a first side of an image sensor substrate, and exposing the dielectric layer to ultraviolet (UV) radiation. The image sensor substrate comprises a photo diode. A structure of an embodiment comprises a substrate and a charge-less dielectric. The substrate comprises a photo diode. The charge-less dielectric layer is on a first side of the substrate, and a total charge of the charge-less dielectric results in an average voltage drop of less than 0.2 V across the charge-less dielectric layer.
摘要翻译：实施例的方法包括在图像传感器基板的第一侧上形成电介质层，并将介电层暴露于紫外线（UV）辐射。图像传感器基板包括光电二极管。实施例的结构包括基板和无电荷电介质。衬底包括光电二极管。无电荷介电层位于衬底的第一侧上，无电荷电介质的总电荷导致无电荷介电层的平均电压降低于0.2V。

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