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    • 4. 发明授权
    • Display apparatus
    • 显示装置
    • US07982727B2
    • 2011-07-19
    • US11102175
    • 2005-04-08
    • Dong-Hwan LeeDong-Ho LeeSoo-Jin Kim
    • Dong-Hwan LeeDong-Ho LeeSoo-Jin Kim
    • G09G5/00
    • G02F1/13452G02F2001/13456
    • In a display apparatus, a printed circuit board has a base substrate, a flip chip, and an adhesive member. The flip chip is mounted onto a first face of the base substrate by the adhesive member between the flip chip and the first face of the base substrate. The first display panel is disposed on a second face opposite to the first face of the base substrate, and a second display panel is mounted on the first face of the base substrate with the flip chip. Thus, a chip mounted on the printed circuit board is made smaller and the freed up space can be used to mount the second display panel.
    • 在显示装置中,印刷电路板具有基底基板,倒装芯片和粘合部件。 倒装芯片通过位于倒装芯片和基底基板的第一面之间的粘合部件安装在基底基板的第一面上。 第一显示面板设置在与基底基板的第一面相反的第二面上,第二显示面板通过倒装芯片安装在基底基板的第一面上。 因此,安装在印刷电路板上的芯片更小,并且可以使用释放的空间来安装第二显示面板。
    • 6. 发明授权
    • Method of manufacturing a semiconductor device
    • 制造半导体器件的方法
    • US07704851B2
    • 2010-04-27
    • US11616018
    • 2006-12-26
    • Soo Jin Kim
    • Soo Jin Kim
    • H01L21/76
    • H01L21/823475H01L21/7682H01L27/115H01L27/11521
    • A method of manufacturing a semiconductor device includes providing a semiconductor substrate with gate structures. A sacrificial insulating layer is formed between the gate structures at a height lower than that of the gate structures such that a portion of each gate structure is exposed above the sacrificial insulating layer. Spacers are formed on sidewalls of the exposed portions of the gate structures. A portion of the sacrificial insulating layer between the spacers is exposed. The sacrificial insulating layer is removed, thereby forming spaces below the spacers. An insulating layer is formed to fill the spaces between the spacers such that air pockets are formed between the gate structures and below the spacers.
    • 制造半导体器件的方法包括:提供具有栅极结构的半导体衬底。 在栅极结构之间形成牺牲绝缘层,其高度低于栅极结构的高度,使得每个栅极结构的一部分暴露在牺牲绝缘层的上方。 隔板形成在栅极结构的暴露部分的侧壁上。 间隔物之间​​的牺牲绝缘层的一部分被暴露。 去除牺牲绝缘层,从而在间隔物之下形成空间。 形成绝缘层以填充间隔件之间的空间,使得在栅极结构之间和间隔物下方形成气穴。
    • 7. 发明授权
    • Method of forming a gate of a semiconductor device
    • 形成半导体器件的栅极的方法
    • US07700472B2
    • 2010-04-20
    • US11761281
    • 2007-06-11
    • Soo Jin Kim
    • Soo Jin Kim
    • H01L21/3205H01L21/4763
    • H01L21/28247H01L21/28273H01L27/11521
    • A method of forming a gate of a semiconductor device includes providing a semiconductor substrate over which a first conductive layer, a dielectric layer and a second conductive layer are formed. The second conductive layer is patterned to expose a part of the dielectric layer. A first protection layer is formed on sidewalls of the second conductive layer. A first etch process is performed to remove the exposed dielectric layer and to expose a part of the first conductive layer. A second protection layer is formed on sidewalls of the second conductive layer. A second etch process is performed to remove the exposed first conductive layer.
    • 形成半导体器件的栅极的方法包括提供半导体衬底,在其上形成第一导电层,电介质层和第二导电层。 图案化第二导电层以暴露电介质层的一部分。 第一保护层形成在第二导电层的侧壁上。 执行第一蚀刻工艺以去除暴露的介电层并暴露第一导电层的一部分。 第二保护层形成在第二导电层的侧壁上。 执行第二蚀刻工艺以去除暴露的第一导电层。