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1. 发明授权

US08531046B2 Semiconductor substrates comprising through substrate interconnects that are visible on the substrate backside 有权
标题翻译：包括在衬底背面可见的通过衬底互连的半导体衬底
公开(公告)号：US08531046B2
公开(公告)日：2013-09-10
申请号：US13099672
申请日：2011-05-03
申请人： Dave Pratt , Kyle K. Kirby , Steve Oliver , Mark Hiatt
发明人： Dave Pratt , Kyle K. Kirby , Steve Oliver , Mark Hiatt
IPC分类号： H01L23/544
CPC分类号： H01L21/682 , H01L21/67259 , H01L21/76898 , H01L23/544 , H01L2223/5442 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： The invention includes methods of determining x-y spatial orientation of a semiconductor substrate comprising an integrated circuit, methods of positioning a semiconductor substrate comprising an integrated circuit, methods of processing a semiconductor substrate, and semiconductor devices. In one implementation, a method of determining x-y spatial orientation of a semiconductor substrate comprising an integrated circuit includes providing a semiconductor substrate comprising at least one integrated circuit die. The semiconductor substrate comprises a circuit side, a backside, and a plurality of conductive vias extending from the circuit side to the backside. The plurality of conductive vias on the semiconductor substrate backside is examined to determine location of portions of at least two of the plurality of conductive vias on the semiconductor substrate backside. From the determined location, x-y spatial orientation of the semiconductor substrate is determined. Other aspects and implementations are contemplated.
摘要翻译：本发明包括确定包括集成电路的半导体衬底的x-y空间取向的方法，包括集成电路的半导体衬底的定位方法，半导体衬底的处理方法以及半导体器件。在一个实现中，确定包括集成电路的半导体衬底的x-y空间取向的方法包括提供包括至少一个集成电路管芯的半导体衬底。半导体衬底包括电路侧，背面以及从电路侧延伸到背面的多个导电通路。检查半导体衬底背面上的多个导电通孔以确定半导体衬底背面上的多个导电通孔中的至少两个的部分的位置。从确定的位置确定半导体衬底的x-y空间取向。考虑了其他方面和实现。

2. 发明授权

US08395242B2 Semiconductor device having backside redistribution layers 有权
标题翻译：具有背侧再分布层的半导体器件
公开(公告)号：US08395242B2
公开(公告)日：2013-03-12
申请号：US13072445
申请日：2011-03-25
申请人： Steve Oliver , Warren Farnworth
发明人： Steve Oliver , Warren Farnworth
IPC分类号： H01L21/44
CPC分类号： H01L21/44 , H01L21/768 , H01L21/76877 , H01L21/76898 , H01L23/481 , H01L23/485 , H01L24/11 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/05144 , H01L2224/05155 , H01L2224/05164 , H01L2224/05567 , H01L2224/05572 , H01L2224/05644 , H01L2224/05655 , H01L2224/13025 , H01L2924/12042 , H01L2924/14 , H01L2924/00 , H01L2924/00014
摘要： Present embodiments relate to a semiconductor device having a backside redistribution layer and a method for forming such a layer. Specifically, one embodiment includes providing a substrate comprising a via formed therein. The substrate has a front side and a backside. The embodiment may further include forming a trench on the backside of the substrate, disposing an insulating material in the trench, and forming a trace over the insulating material in the trench.
摘要翻译：本实施例涉及具有背面再分配层的半导体器件和用于形成这种层的方法。具体地，一个实施例包括提供包括其中形成的通孔的基板。基板具有正面和背面。该实施例还可以包括在衬底的背面上形成沟槽，在沟槽中设置绝缘材料，并在沟槽中的绝缘材料上形成迹线。

3. 发明授权

US08048708B2 Method and apparatus providing an imager module with a permanent carrier 有权
标题翻译：为成像模块提供永久性载体的方法和装置
公开(公告)号：US08048708B2
公开(公告)日：2011-11-01
申请号：US12213836
申请日：2008-06-25
申请人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
发明人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
IPC分类号： H01L21/00
CPC分类号： H01L27/14683 , H01L21/6835 , H01L24/94 , H01L27/14618 , H01L27/14627 , H01L2221/6834 , H01L2221/68377 , H01L2224/11003 , H01L2924/01077 , H01L2924/09701 , H01L2924/14 , H01L2924/19042 , H01L2924/3025 , H04N5/2257
摘要： Method and apparatus providing a wafer level fabrication of imager modules in which a permanent carrier protects imager devices on an imager wafer and is used to support a lens wafer.
摘要翻译：提供成像器模块的晶片级制造的方法和装置，其中永久载体保护成像器晶片上的成像器件并且用于支撑透镜晶片。

4. 发明申请

US20110169122A1 SEMICONDUCTOR DEVICE HAVING BACKSIDE REDISTRIBUTION LAYERS AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：具有背面重分布层的半导体器件及其制造方法
公开(公告)号：US20110169122A1
公开(公告)日：2011-07-14
申请号：US13072445
申请日：2011-03-25
申请人： Steve Oliver , Warren Farnworth
发明人： Steve Oliver , Warren Farnworth
IPC分类号： H01L23/48 , H01L31/0224
CPC分类号： H01L21/44 , H01L21/768 , H01L21/76877 , H01L21/76898 , H01L23/481 , H01L23/485 , H01L24/11 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/05144 , H01L2224/05155 , H01L2224/05164 , H01L2224/05567 , H01L2224/05572 , H01L2224/05644 , H01L2224/05655 , H01L2224/13025 , H01L2924/12042 , H01L2924/14 , H01L2924/00 , H01L2924/00014
摘要： Present embodiments relate to a semiconductor device having a backside redistribution layer and a method for forming such a layer. Specifically, one embodiment includes providing a substrate comprising a via formed therein. The substrate has a front side and a backside. The embodiment may further include forming a trench on the backside of the substrate, disposing an insulating material in the trench, and forming a trace over the insulating material in the trench.
摘要翻译：本实施例涉及具有背面再分配层的半导体器件和用于形成这种层的方法。具体地，一个实施例包括提供包括其中形成的通孔的基板。基板具有正面和背面。该实施例还可以包括在衬底的背面上形成沟槽，在沟槽中设置绝缘材料，并在沟槽中的绝缘材料上形成迹线。

5. 发明授权

US07932179B2 Method for fabricating semiconductor device having backside redistribution layers 有权
标题翻译：具有背面再分布层的半导体器件的制造方法
公开(公告)号：US07932179B2
公开(公告)日：2011-04-26
申请号：US11881469
申请日：2007-07-27
申请人： Steve Oliver , Warren Farnworth
发明人： Steve Oliver , Warren Farnworth
IPC分类号： H01L21/44
CPC分类号： H01L21/44 , H01L21/768 , H01L21/76877 , H01L21/76898 , H01L23/481 , H01L23/485 , H01L24/11 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/05144 , H01L2224/05155 , H01L2224/05164 , H01L2224/05567 , H01L2224/05572 , H01L2224/05644 , H01L2224/05655 , H01L2224/13025 , H01L2924/12042 , H01L2924/14 , H01L2924/00 , H01L2924/00014
摘要： Present embodiments relate to a semiconductor device having a backside redistribution layer and a method for forming such a layer. Specifically, one embodiment includes providing a substrate comprising a via formed therein. The substrate has a front side and a backside. The embodiment may further include forming a trench on the backside of the substrate, disposing an insulating material in the trench, and forming a trace over the insulating material in the trench.
摘要翻译：本实施例涉及具有背面再分配层的半导体器件和用于形成这种层的方法。具体地，一个实施例包括提供包括其中形成的通孔的基板。基板具有正面和背面。该实施例还可以包括在衬底的背面上形成沟槽，在沟槽中设置绝缘材料，并在沟槽中的绝缘材料上形成迹线。

6. 发明授权

US07916396B2 Lens master devices, lens structures, imaging devices, and methods and apparatuses of making the same 有权
标题翻译：透镜主设备，透镜结构，成像设备及其制造方法和设备
公开(公告)号：US07916396B2
公开(公告)日：2011-03-29
申请号：US12216032
申请日：2008-06-27
申请人： David R. Hembree , Steve Oliver
发明人： David R. Hembree , Steve Oliver
IPC分类号： G02B27/10 , B29D11/00
CPC分类号： G02B3/0025 , B29D11/00278 , G02B3/0031 , G02B3/005 , G02B3/0056
摘要： A method and apparatus providing a lens master device and use of the same to form a lens template and/or a lens structure. The method includes obtaining a plurality of individual lens masters, each of which has a shaped portion defining at least a portion of a lens structure to be formed. The lens masters are affixed onto a supporting structure to form a lens master device.
摘要翻译：提供透镜主装置的方法和装置及其使用以形成透镜模板和/或透镜结构。该方法包括获得多个单独的镜头主体，每个镜头主体具有限定要形成的透镜结构的至少一部分的成形部分。透镜主体固定在支撑结构上以形成透镜主装置。

7. 发明申请

US20090321863A1 Method and apparatus providing an imager module with a permanent carrier 有权
标题翻译：为成像模块提供永久性载体的方法和装置
公开(公告)号：US20090321863A1
公开(公告)日：2009-12-31
申请号：US12213836
申请日：2008-06-25
申请人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
发明人： Swarnal Borthakur , Rick Lake , Andy Perkins , Scott Churchwell , Steve Oliver
IPC分类号： H01L21/50 , H01L31/02
CPC分类号： H01L27/14683 , H01L21/6835 , H01L24/94 , H01L27/14618 , H01L27/14627 , H01L2221/6834 , H01L2221/68377 , H01L2224/11003 , H01L2924/01077 , H01L2924/09701 , H01L2924/14 , H01L2924/19042 , H01L2924/3025 , H04N5/2257
摘要： Method and apparatus providing a wafer level fabrication of imager modules in which a permanent carrier protects imager devices on an imager wafer and is used to support a lens wafer.
摘要翻译：提供成像器模块的晶片级制造的方法和装置，其中永久载体保护成像器晶片上的成像器件并且用于支撑透镜晶片。

8. 发明申请

US20080308893A1 IMAGERS WITH CONTACT PLUGS EXTENDING THROUGH THE SUBSTRATES THEREOF AND IMAGER FABRICATION METHODS 有权
标题翻译：具有通过其基板延伸的接触片的成像器和图像制造方法
公开(公告)号：US20080308893A1
公开(公告)日：2008-12-18
申请号：US11761904
申请日：2007-06-12
申请人： Kyle K. Kirby , Steve Oliver
发明人： Kyle K. Kirby , Steve Oliver
IPC分类号： H01L31/02 , H01L31/18
CPC分类号： H01L27/14636 , H01L21/76898 , H01L27/14612 , H01L27/14625 , H01L27/14632 , H01L27/14643
摘要： Methods for fabricating photoimagers, such as complementary metal-oxide-semiconductor (CMOS) imagers, include fabricating image sensing elements, transistors, and other low-elevation features on an active surface of a fabrication substrate, and fabricating contact plugs, conductive lines, external contacts, and other higher-elevation features on the back side of the fabrication substrate. Imagers with image sensing elements and transistors on the active surface and contact plugs that extend through the substrate are also disclosed, as are electronic devices including such imagers.
摘要翻译：用于制造诸如互补金属氧化物半导体（CMOS）成像器的光电效应器的方法包括在制造衬底的有源表面上制造图像感测元件，晶体管和其它低仰角特征，以及制造接触插头，导线，外部接触和其他较高高度的特征。还公开了在活性表面上具有图像感测元件和晶体管的成像器以及延伸穿过衬底的接触插塞，以及包括这种成像器的电子设备也是公开的。

9. 发明授权

US6088447A Telephone base including visual display module 失效
标题翻译：电话底座包括视觉显示模块
公开(公告)号：US6088447A
公开(公告)日：2000-07-11
申请号：US818083
申请日：1997-03-14
申请人： Trevor J. Aggus , George A. Kopacz , Steve Oliver Mak , Mark Edward Millman , Bobbie Jo Ridgely
发明人： Trevor J. Aggus , George A. Kopacz , Steve Oliver Mak , Mark Edward Millman , Bobbie Jo Ridgely
IPC分类号： H04M1/00 , H04M1/02 , H04M1/56 , H04M1/57
CPC分类号： H04M1/0295
摘要： A telephone instrument is disclosed which includes a swivel visual display module overcome by employing a telephone base having upper and lower housings. A swivel visual display module is pivotally mounted and supported by pivot points in both the upper and lower base housings. At least one cantilever snap member is molded into one of the base housings, for example, the upper base housing, and is employed to engage indents molded into an outer convex surface of the visual display module to hold the visual display module in several angular positions. Additionally, the at least one cantilever snap member is employed to engage a lower edge of the visual display module and in conjunction with stop members on the visual display module to secure the visual display module in a full upright position. The visual display module is secured in its full down position by the at least one cantilever snap member engaging one of the indents which has been strategically placed on the outer convex surface of the visual display module. In one embodiment, the visual display module is a unitary molded arrangement. Additionally, at least two cantilever snap members are integrally molded into the upper housing of the base unit and a plurality of corresponding indents have been appropriately molded into the outer convex surface of the visual display module. The cantilever snap members in conjunction with the indents allow the securing of the visual display member at individual ones of a plurality of angular positions.
摘要翻译：公开了一种电话仪器，其包括通过采用具有上壳体和下壳体的电话基座克服的旋转视觉显示模块。旋转视觉显示模块由上和下基座壳体中的枢转点可枢转地安装和支撑。至少一个悬臂卡扣构件被模制到一个基座壳体中，例如上基座壳体中，并且用于接合模制到视觉显示模块的外凸面的凹口，以将视觉显示模块保持在几个角位置。此外，使用至少一个悬臂卡扣构件来接合视觉显示模块的下边缘并与视觉显示模块上的止动构件结合，以将视觉显示模块固定在完全直立的位置。所述视觉显示模块通过所述至少一个悬臂卡扣构件固定在其完全向下的位置，所述至少一个悬臂卡扣构件接合已经被策略地放置在所述视觉显示模块的外凸面上的一个凹口。在一个实施例中，视觉显示模块是整体模制布置。此外，至少两个悬臂卡扣构件一体地模制到基座单元的上壳体中，并且多个对应的凹口已被适当地模制到视觉显示模块的外凸面中。与缩进结合的悬臂卡扣构件允许将视觉显示构件固定在多个角位置中的各个位置。

10. 发明授权

US08679933B2 Semiconductor device fabrication methods 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08679933B2
公开(公告)日：2014-03-25
申请号：US13198533
申请日：2011-08-04
申请人： Kyle K. Kirby , Steve Oliver
发明人： Kyle K. Kirby , Steve Oliver
IPC分类号： H01L21/20
CPC分类号： H01L27/14636 , H01L21/76898 , H01L27/14612 , H01L27/14625 , H01L27/14632 , H01L27/14643
摘要： Methods for fabricating semiconductor devices, such as complementary metal-oxide-semiconductor (CMOS) imagers, include fabricating transistors and other low-elevation features on an active surface of a fabrication substrate, and fabricating contact plugs, conductive lines, external contacts, and other higher-elevation features on the back side of the fabrication substrate. Semiconductor devices with transistors on the active surface and contact plugs that extend through the substrate are also disclosed, as are electronic devices including such semiconductor devices.
摘要翻译：用于制造诸如互补金属氧化物半导体（CMOS）成像器的半导体器件的方法包括在制造衬底的有源表面上制造晶体管和其它低仰角特征，以及制造接触插塞，导线，外部触点等在制造基板的背面上的较高高度特征。还公开了在有源表面上具有晶体管的半导体器件和延伸穿过衬底的接触插塞，以及包括这种半导体器件的电子器件也是公开的。

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