专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07968507B2 Composition for stripping and stripping method 有权
标题翻译：汽提和汽提方法的组成
公开(公告)号：US07968507B2
公开(公告)日：2011-06-28
申请号：US12214658
申请日：2008-06-20
申请人： Ji Sun Lee , Hong Sick Park , Jong Hyun Choung , Sun Young Hong , Bong Kyun Kim , Byeong Jin Lee , Byung Uk Kim , Jong Hyun Jeong , Suk Il Yoon , Seong Bae Kim , Sung Gun Shin , Soon Beom Huh , Se Hwan Jung , Doo Young Jang
发明人： Ji Sun Lee , Hong Sick Park , Jong Hyun Choung , Sun Young Hong , Bong Kyun Kim , Byeong Jin Lee , Byung Uk Kim , Jong Hyun Jeong , Suk Il Yoon , Seong Bae Kim , Sung Gun Shin , Soon Beom Huh , Se Hwan Jung , Doo Young Jang
IPC分类号： C11D7/06
CPC分类号： G03F7/425
摘要： The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or organic insulating film on the substrate. In one embodiment, the stripping composition includes about 0.5 to about 45 wt % of hydroxide compound, about 10 to about 89 wt % of alkyleneglycolalkylether compound, about 5 to about 45 wt % of alkanolamine compound, and about 0.01 to about 5 wt % of inorganic salt compound. Advantageously, the stripping process can be performed without damaging a thin film transistor of a bottom substrate while removing the color resist or organic insulating film.
摘要翻译：本发明提供了一种剥离组合物和剥离方法，其能够在形成基板上的滤色器或有机绝缘膜的过程中发现缺陷时容易地剥离形成在基板上的着色抗蚀剂或有机绝缘膜，以重新使用基板。在一个实施方案中，汽提组合物包含约0.5至约45重量％的氢氧化物化合物，约10至约89重量％的亚烷基二醇烷基醚化合物，约5至约45重量％的烷醇胺化合物和约0.01至约5重量％的无机盐化合物。有利地，可以在不损坏底部基板的薄膜晶体管的同时进行剥离处理，同时移除彩色抗蚀剂或有机绝缘膜。

2. 发明授权

US06908892B2 Photoresist remover composition 有权
标题翻译：光刻胶去除剂组成
公开(公告)号：US06908892B2
公开(公告)日：2005-06-21
申请号：US10297646
申请日：2001-06-07
申请人： Suk-Il Yoon , Young-Woong Park , Chang-Il Oh , Sang-Dai Lee , Chong-Soon Yoo
发明人： Suk-Il Yoon , Young-Woong Park , Chang-Il Oh , Sang-Dai Lee , Chong-Soon Yoo
IPC分类号： G03F7/42 , H01L21/027 , C11D7/32 , C11D7/50
CPC分类号： G03F7/425
摘要： The present invention is a photoresist remover composition used in order to remove photoresist during the manufacturing process of semiconductor devices, such as large-scale integrated circuits and very large-scale integrated circuits. The present invention comprises 2˜20 weight % of water-soluble hydroxylamine, 5˜15 weight % of oxime compound containing 2 or 3 hydroxyl groups, and 30˜55 weight % of alkyl amide. The photoresist remover composition according to the present invention can easily and quickly remove a photoresist layer that is cured by the processes of hard-bake, dry-etching, and ashing and a side-wall photoresist polymer that is produced from the lower metal film by the reaction of the photoresist with etching and ashing gases during these processes. Especially, the photoresist remover composition has a good property of removing the side-wall photoresist polymer produced from the layers of aluminum, aluminum alloy, and titanium nitride. In addition, during removing process of photoresist, the photoresist remover composition can minimize the corrosion of lower metal film, in particular, the new metallic layers which is adopted to a production line of 64 MDRAM or more-VLSL
摘要翻译：本发明是为了在诸如大规模集成电路和大规模集成电路的半导体器件的制造过程中去除光致抗蚀剂而使用的光致抗蚀剂去除剂组合物。本发明包含2〜20重量％的水溶性羟胺，5〜15重量％的含2或3个羟基的肟化合物和30〜55重量％的烷基酰胺。根据本发明的光致抗蚀剂去除剂组合物可以容易且快速地除去通过硬烘烤，干蚀刻和灰化过程固化的光致抗蚀剂层和由下金属膜制备的侧壁光致抗蚀剂聚合物，通过在这些过程中光刻胶与蚀刻和灰化气体的反应。特别地，光刻胶去除剂组合物具有除去由铝，铝合金和氮化钛层生产的侧壁光致抗蚀剂聚合物的良好性能。此外，在光致抗蚀剂的除去过程中，光致抗蚀剂去除剂组合物可以最小化下金属膜的腐蚀，特别是在生产线上采用的64MDRAM或更高VLSL的新金属层

3. 发明申请

US20050048397A1 Composition and method for removing copper-compatible resist 有权
标题翻译：去除铜兼容抗蚀剂的组成和方法
公开(公告)号：US20050048397A1
公开(公告)日：2005-03-03
申请号：US10924841
申请日：2004-08-25
申请人： Gyoo-Chul Jo , Geo-Sung Chae , Oh-Nam Kwon , Kyoung-Mook Lee , Yong-Sup Hwang , Seong-Bae Kim , Suk-Chang Jang , Suk-Il Yoon
发明人： Gyoo-Chul Jo , Geo-Sung Chae , Oh-Nam Kwon , Kyoung-Mook Lee , Yong-Sup Hwang , Seong-Bae Kim , Suk-Chang Jang , Suk-Il Yoon
IPC分类号： G03F7/42 , C11D3/00 , C11D7/26 , C11D7/32 , C11D7/34 , C11D11/00 , G02F1/133 , G02F1/136 , G03C11/12 , H01L21/027
CPC分类号： C11D3/0073 , C11D7/263 , C11D7/3218 , C11D7/3263 , C11D7/3281 , C11D7/34 , C11D11/0047 , G03F7/425
摘要： A composition for removing a copper-compatible resist includes about 10 to 30% by weight of an amine compound solvent, the amine compound solvent including an alkanol amine, about 10 to 80% by weight of a glycol group solvent, about 9.5 to 80% by weight of a polar solvent, and about 0.5 to 10% by weight of a corrosion inhibitor.
摘要翻译：用于除去铜相容抗蚀剂的组合物包括约10至30重量％的胺化合物溶剂，包括烷醇胺的胺化合物溶剂，约10至80重量％的二醇基溶剂，约9.5至80重量％的极性溶剂和约0.5-10重量％的腐蚀抑制剂。

4. 发明授权

US07553710B2 Composition for stripping photoresist and method for manufacturing thin transistor array panel using the same 有权
标题翻译：用于剥离光刻胶的组合物和使用其制造薄晶体管阵列面板的方法
公开(公告)号：US07553710B2
公开(公告)日：2009-06-30
申请号：US11873791
申请日：2007-10-17
申请人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
发明人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： G03F7/425 , H01L21/31133 , H01L27/124 , H01L27/1288 , H01L29/458
摘要： The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.
摘要翻译：本发明提供了一种光致抗蚀剂剥离器，其包括约5重量％至约20重量％的醇胺，约40重量％至约70重量％的二醇醚，约20重量％至约40重量％的N-甲基吡咯烷酮，以及约0.2重量％％至约6重量％的螯合剂。

5. 发明授权

US06887655B2 Photoresist removing compositions 有权
标题翻译：光刻胶去除组合物
公开(公告)号：US06887655B2
公开(公告)日：2005-05-03
申请号：US10718277
申请日：2003-11-20
申请人： Seong Hwan Park , Chang Hwan Lee , Sam Young Cho , Wy Yong Kim , Suk Il Yoon
发明人： Seong Hwan Park , Chang Hwan Lee , Sam Young Cho , Wy Yong Kim , Suk Il Yoon
IPC分类号： C11D7/08 , C09D9/00 , C11D7/10 , C11D7/18 , C11D7/26 , G03F7/004 , G03F7/32 , G03F7/42 , H01L21/02 , H01L21/027 , H01L21/304 , H01L21/3065
CPC分类号： G03F7/425 , G03F7/423 , H01L21/02071
摘要： A photoresist polymer remover composition for removing photoresist residuals generated from etching or ashing sub-processes. The disclosed photoresist polymer remover composition includes: (a) 5% to 15% of sulfuric acid based on the total weight of said composition, (b) 1% to 5% of hydrogen peroxide or 0.0001% to 0.05% of ozone based on the total weight of said composition, (c) 0.1% to 5% of acetic acid based on the total weight of said composition, (d) 0.0001% to 0.5% of ammonium fluoride based on the total weight of said composition and (e) remaining amount of water.
摘要翻译：用于去除蚀刻或灰化子过程产生的光致抗蚀剂残留物的光致抗蚀剂聚合物去除剂组合物。公开的光致抗蚀剂聚合物去除剂组合物包括：（a）基于所述组合物的总重量的5％至15％的硫酸，（b）1％至5％的过氧化氢或0.0001％至0.05％的臭氧，基于所述组合物的总重量，（c）基于所述组合物的总重量的0.1％至5％的乙酸，（d）基于所述组合物的总重量为0.0001％至0.5％的氟化铵，（e）剩余的水量。

6. 发明授权

US09057953B2 Thinner composition for RRC process, apparatus for supplying the same, and thinner composition for EBR process 有权
标题翻译： RRC过程的稀释剂组合物，用于提供该方法的装置，以及用于EBR方法的较薄组合物
公开(公告)号：US09057953B2
公开(公告)日：2015-06-16
申请号：US13598731
申请日：2012-08-30
申请人： Hyo-jin Yun , Sung-gun Shin , Hyo-sun Lee , Byung-uk Kim , Hyun-woo Kim , Suk-il Yoon , Oh-hwan Kweon
发明人： Hyo-jin Yun , Sung-gun Shin , Hyo-sun Lee , Byung-uk Kim , Hyun-woo Kim , Suk-il Yoon , Oh-hwan Kweon
IPC分类号： G03F7/16 , C11D11/00
CPC分类号： G03F7/168 , C11D11/0047
摘要： A thinner composition for a reduced resist coating process includes an alkyl lactate, cyclohexanone, and an alkyl acetate, wherein an alkyl substituent of the alkyl acetate is a C1 to C5 non-ether based alkyl group.
摘要翻译：用于降低抗蚀剂涂布方法的较薄组合物包括乳酸烷基酯，环己酮和乙酸烷基酯，其中乙酸烷基酯的烷基取代基是C1至C5非醚基烷基。

7. 发明申请

US20110206829A1 COMPOSITION FOR STRIPPING AND STRIPPING METHOD 有权
标题翻译：用于剥离和剥离方法的组合物
公开(公告)号：US20110206829A1
公开(公告)日：2011-08-25
申请号：US13101973
申请日：2011-05-05
申请人： Ji Sun LEE , Hong Sick PARK , Jong Hyun CHOUNG , Sun Young HONG , Bong Kyun KIM , Byeong Jin LEE , Byung Uk KIM , Jong Hyun JEONG , Suk Il YOON , Seong Bae KIM , Sung Gun SHIN , Soon Beom HUH , Se Hwan JUNG , Doo Young JANG
发明人： Ji Sun LEE , Hong Sick PARK , Jong Hyun CHOUNG , Sun Young HONG , Bong Kyun KIM , Byeong Jin LEE , Byung Uk KIM , Jong Hyun JEONG , Suk Il YOON , Seong Bae KIM , Sung Gun SHIN , Soon Beom HUH , Se Hwan JUNG , Doo Young JANG
IPC分类号： C23C16/52 , B05D5/12
CPC分类号： G03F7/425
摘要： The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or organic insulating film on the substrate. In one embodiment, the stripping composition includes about 0.5 to about 45 wt % of hydroxide compound, about 10 to about 89 wt % of alkyleneglycolalkylether compound, about 5 to about 45 wt % of alkanolamine compound, and about 0.01 to about 5 wt % of inorganic salt compound. Advantageously, the stripping process can be performed without damaging a thin film transistor of a bottom substrate while removing the color resist or organic insulating film.
摘要翻译：本发明提供了一种剥离组合物和剥离方法，其能够在形成基板上的滤色器或有机绝缘膜的过程中发现缺陷时容易地剥离形成在基板上的着色抗蚀剂或有机绝缘膜，以重新使用基板。在一个实施方案中，汽提组合物包含约0.5至约45重量％的氢氧化物化合物，约10至约89重量％的亚烷基二醇烷基醚化合物，约5至约45重量％的烷醇胺化合物和约0.01至约5重量％的无机盐化合物。有利地，可以在不损坏底部基板的薄膜晶体管的同时进行剥离处理，同时移除彩色抗蚀剂或有机绝缘膜。

8. 发明授权

US07956393B2 Composition for photoresist stripper and method of fabricating thin film transistor array substrate 有权
标题翻译：用于光致抗蚀剂剥离剂的组合物和制造薄膜晶体管阵列基板的方法
公开(公告)号：US07956393B2
公开(公告)日：2011-06-07
申请号：US12564019
申请日：2009-09-21
申请人： Jong-Hyun Choung , Bong-Kyun Kim , Hong-Sick Park , Sun-Young Hong , Young-Joo Choi , Byeong-Jin Lee , Nam-Seok Suh , Byung-Uk Kim , Suk-Il Yoon , Jong-Hyun Jeong , Sung-Gun Shin , Soon-Beom Huh , Se-Hwan Jung , Doo-Young Jang , Sun-Joo Park , Oh-Hwan Kweon
发明人： Jong-Hyun Choung , Bong-Kyun Kim , Hong-Sick Park , Sun-Young Hong , Young-Joo Choi , Byeong-Jin Lee , Nam-Seok Suh , Byung-Uk Kim , Suk-Il Yoon , Jong-Hyun Jeong , Sung-Gun Shin , Soon-Beom Huh , Se-Hwan Jung , Doo-Young Jang , Sun-Joo Park , Oh-Hwan Kweon
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： G03F7/425 , H01L27/124 , H01L27/1288
摘要： A composition for a photoresist stripper and a method of fabricating a thin film transistor array substrate are provided according to one or more embodiments. In one or more embodiments, the composition includes about 5-30 weight % of a chain amine compound, about 0.5-10 weight % of a cyclic amine compound, about 10-80 weight % of a glycol ether compound, about 5-30 weight % of distilled water, and about 0.1-5 weight % of a corrosion inhibitor.
摘要翻译：根据一个或多个实施方案提供了用于光致抗蚀剂剥离剂的组合物和制造薄膜晶体管阵列基板的方法。在一个或多个实施方案中，组合物包含约5-30重量％的链胺化合物，约0.5-10重量％的环胺化合物，约10-80重量％的二醇醚化合物，约5-30重量％％的蒸馏水和约0.1-5重量％的腐蚀抑制剂。

9. 发明申请

US20090170037A1 COMPOSITION FOR REMOVING PHOTORESIST AND METHOD OF MANUFACTURING AN ARRAY SUBSTRATE USING THE SAME 有权
标题翻译：用于去除光电元件的组合物和使用其制造阵列基板的方法
公开(公告)号：US20090170037A1
公开(公告)日：2009-07-02
申请号：US12323649
申请日：2008-11-26
申请人： Jong-Hyun CHOUNG , Hong-Sick Park , Sun-Young Hong , Bong-Kyun Kim , Byeoung-Jin Lee , Byung-Uk Kim , Jong-Hyun Jeong , Suk-Il Yoon , Sung-Gun Shin , Soon-Beom Huh , Se-Hwan Jung , Doo-Young Jang
发明人： Jong-Hyun CHOUNG , Hong-Sick Park , Sun-Young Hong , Bong-Kyun Kim , Byeoung-Jin Lee , Byung-Uk Kim , Jong-Hyun Jeong , Suk-Il Yoon , Sung-Gun Shin , Soon-Beom Huh , Se-Hwan Jung , Doo-Young Jang
IPC分类号： G03F7/20 , G03F7/42
CPC分类号： G03F7/425
摘要： A composition for removing a photoresist includes a) an amine compound having a cyclic amine and/or a diamine, b) a glycol ether compound, c) a corrosion inhibitor and d) a polar solvent. The composition further includes a stripping promoter. Further disclosed is a method of manufacturing an array substrate using the composition for removing a photoresist.
摘要翻译：用于除去光致抗蚀剂的组合物包括a）具有环胺和/或二胺的胺化合物，b）二醇醚化合物，c）缓蚀剂和d）极性溶剂。组合物还包括剥离促进剂。进一步公开了使用除去光致抗蚀剂的组合物制造阵列基板的方法。

10. 发明申请

US20080032432A1 COMPOSITION FOR STRIPPING PHOTORESIST AND METHOD FOR MANUFACTURING THIN TRANSISTOR ARRAY PANEL USING THE SAME 有权
标题翻译：用于剥离光刻胶的组合物和使用其制造薄膜晶体管阵列的方法
公开(公告)号：US20080032432A1
公开(公告)日：2008-02-07
申请号：US11873791
申请日：2007-10-17
申请人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
发明人： Hong-Sick Park , Jong-Hyun Jeong , Suk-Il Yoon , Seong-Bae Kim , Wy-Yong Kim , Soon-Beom Huh , Byung-Uk Kim
IPC分类号： H01L21/311
CPC分类号： G03F7/425 , H01L21/31133 , H01L27/124 , H01L27/1288 , H01L29/458
摘要： The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.
摘要翻译：本发明提供了一种光致抗蚀剂剥离器，其包括约5重量％至约20重量％的醇胺，约40重量％至约70重量％的二醇醚，约20重量％至约40重量％的N-甲基吡咯烷酮，以及约0.2重量％％至约6重量％的螯合剂。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式