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    • 3. 发明申请
    • ION TRAP
    • 离子阱
    • US20140332680A1
    • 2014-11-13
    • US14346007
    • 2012-09-20
    • THE UNIVERSITY OF SUSSEX
    • Jose Luis Verdu Galiana
    • H01J49/20H01J49/00
    • H01J49/20B82Y10/00H01J49/0018H01J49/0031H01J49/38H01J49/422
    • An ion trap comprising: a first array of magnetic elements arranged to generate a first magnetic field with a degree of homogeneity; and an array of electrodes arranged to generate an electrostatic field including a turning point in electrical potential at a location where the magnetic field has a substantially maximum degree of homogeneity; wherein the array of electrodes is planar and parallel to the direction of the magnetic field at the location; and wherein a primary first magnetic element is arranged to generate a first component of the first magnetic field and other first magnetic elements are arranged to generate compensating components of the first magnetic field that reduce the gradient, the curvature and higher order derivatives of the first component of the first magnetic field at the location where the first magnetic field has the substantially maximum degree of homogeneity.
    • 一种离子阱,包括:第一磁性元件阵列,被布置成产生具有均匀度的第一磁场; 以及布置成产生静电场的电极阵列,其包括在磁场具有基本上最大程度的均匀性的位置处的电位的转折点; 其中所述电极阵列是平面的并且平行于所述位置处的所述磁场的方向; 并且其中主要第一磁性元件被布置成产生第一磁场的第一分量,并且其他第一磁性元件被布置成产生第一磁场的补偿分量,其减小第一分量的梯度,曲率和高阶导数 在第一磁场具有基本上最大程度的均匀性的位置处的第一磁场。