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1. 发明申请

US20020005951A1 Semiconductor impurity concentration testing apparatus and semiconductor impurity concentration testing method 有权
标题翻译：半导体杂质浓度检测仪和半导体杂质浓度检测方法
公开(公告)号：US20020005951A1
公开(公告)日：2002-01-17
申请号：US09881738
申请日：2001-06-18
申请人： Tochigi Nikon Corporation
发明人： Ryoichi Fukasawa
IPC分类号： G01N021/00
CPC分类号： G01N21/3586 , G01N21/3563 , G01N21/9501
摘要： A semiconductor impurity concentration testing apparatus comprises a terahertz pulse light source that irradiates terahertz pulse light on a semiconductor material, a light detector that detects transmitted pulse light having been transmitted through the semiconductor material, a measurement device that ascertains a spectral transmittance based upon a time-series waveform of the electric field intensity of the transmitted pulse light and an arithmetic operation unit that calculates an impurity concentration in the semiconductor material based upon the spectral transmittance. By adopting such a structure, it becomes possible to measure and test the impurity concentration over the entire semiconductor material in a simple manner and to reproduce an image of the impurity distribution.
摘要翻译：一种半导体杂质浓度测试装置，包括在半导体材料上照射太赫兹脉冲光的太赫兹脉冲光源，检测透过半导体材料的透射脉冲光的光检测器，基于时间确定光谱透射率的测量装置 - 发射脉冲光的电场强度的系列波形和基于光谱透射率计算半导体材料中的杂质浓度的算术运算单元。通过采用这种结构，可以简单地测量和测试整个半导体材料上的杂质浓度并再现杂质分布的图像。

2. 发明申请

US20010029436A1 Semiconductor electrical characteristics evaluation apparatus and semiconductor electrical characteristics evaluation method 审中-公开
标题翻译：半导体电气特性评估装置及半导体电气特性评估方法
公开(公告)号：US20010029436A1
公开(公告)日：2001-10-11
申请号：US09816085
申请日：2001-03-26
申请人： TOCHIGI NIKON CORPORATION, NIKON CORPORATION
发明人： Ryoichi Fukasawa
IPC分类号： G06F019/00 , G01R027/28 , G01R031/00 , G01R031/14
CPC分类号： G01N21/3581 , G01N21/3563 , G01R31/2831 , G01R31/311
摘要： An electrical characteristics evaluation apparatus comprises a terahertz pulse light source that irradiates terahertz pulse light onto a semiconductor material, a light detector that detects pulse light having been transmitted through or having been reflected by the semiconductor material, a measurement device that obtains a spectral transmittance or a spectral reflectance by using a time-series waveform of the electric field intensity of the transmitted pulse light or the reflected pulse light and an arithmetic operation unit that calculates an electrical characteristics parameter of the semiconductor material based upon the spectral transmittance or the spectral reflectance. By adopting this electrical characteristics evaluation apparatus and the corresponding electrical characteristics evaluation method, the electrical material quantities (such as the carrier density, the mobility, the resistivity and the electrical conductivity) of the measurement target, i.e.,the semiconductor material, can be measured and inspected without contaminating or damaging the semiconductor material.
摘要翻译：电特性评估装置包括将太赫兹脉冲光照射到半导体材料上的太赫兹脉冲光源，检测已被透过或被半导体材料反射的脉冲光的光检测器，获得光谱透射率的测量装置或通过使用发射脉冲光或反射脉冲光的电场强度的时间序列波形的光谱反射率和基于光谱透射率或光谱反射率计算半导体材料的电特性参数的算术运算单元。通过采用该电特性评价装置和相应的电特性评价方法，可以测量测量对象（即，半导体材料）的电气材料量（诸如载流子密度，迁移率，电阻率和电导率）并且在不污染或损坏半导体材料的情况下检查。

3. 发明申请

US20210181458A1 LENS BARREL 有权
公开(公告)号：US20210181458A1
公开(公告)日：2021-06-17
申请号：US17256471
申请日：2019-06-04
申请人： NIKON CORPORATION , TOCHIGI NIKON CORPORATION
发明人： Kunihiko SHIMIZU , Satoshi WAIZUMI , Takehiro KOIZUMI
IPC分类号： G02B7/10 , G03B17/14 , G02B7/02 , G02B15/14
摘要： A lens barrel capable of increasing the moving range of a lens includes: a lens retainer frame for holding a lens; a drive unit for driving the lens retainer frame along the optical axis direction; a first cylinder that holds the drive unit and has a cam follower; a second cylinder that has a cam groove for engaging the cam follower; and a bias part for biasing the first cylinder along the optical axis.

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