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1. 发明授权

US06334311B1 Thermoelectric-cooling temperature control apparatus for semiconductor device fabrication facility 失效
标题翻译：用于半导体器件制造设备的热电冷却温度控制装置
公开(公告)号：US06334311B1
公开(公告)日：2002-01-01
申请号：US09511896
申请日：2000-02-23
申请人： Tae-hoon Kim , Byung-chul Kim , Young-woo Lee , Tae-ryong Kim
发明人： Tae-hoon Kim , Byung-chul Kim , Young-woo Lee , Tae-ryong Kim
IPC分类号： F25B2102
CPC分类号： H01L35/32 , F25B21/02 , H01L35/30 , Y02P80/156
摘要： A thermoelectric-cooling temperature control apparatus for a semiconductor device fabrication facility maintains a temperature condition, such as the temperature of a wafer, stable during the fabrication process. The apparatus includes a heat exchanger having a thermoelectric cooling element which produces a Peltier Effect to cause the element to absorb and radiate heat according to current flowing through the element
摘要翻译：用于半导体器件制造设备的热电冷却温度控制装置在制造过程中保持诸如晶片的温度的温度条件稳定。该装置包括具有热电冷却元件的热交换器，该热电冷却元件产生珀耳帖效应，以使元件根据流过元件的电流吸收和辐射热量

2. 发明授权

US6124216A Method of making intermetal dielectric layers having a low dielectric constant 有权
标题翻译：制造具有低介电常数的金属间电介质层的方法
公开(公告)号：US6124216A
公开(公告)日：2000-09-26
申请号：US393185
申请日：1999-09-10
申请人： Ho Ko , Tae-Ryong Kim , Chung-Howan Kim , Dong-Yun Kim , Jong-Heui Song
发明人： Ho Ko , Tae-Ryong Kim , Chung-Howan Kim , Dong-Yun Kim , Jong-Heui Song
IPC分类号： H01L21/28 , H01L21/312 , H01L21/768 , H01L23/48 , H01L29/52
CPC分类号： H01L21/02164 , H01L21/02134 , H01L21/02304 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/02351 , H01L21/02362 , H01L21/3124 , H01L21/76801
摘要： A method of forming a low-k dielectric insulating layer includes forming the dielectric insulating layer and then removing hydrogen bonds in the dielectric insulating layer. The dielectric layer as formed is preferably a HSQ film which contains the structure Si--O--H. Hydrogen is removed from the dielectric layer by either: a heat treatment in plasma, an ozone reduction process, an ion implantation process, or electron beam bombardment.
摘要翻译：形成低k电介质绝缘层的方法包括形成介电绝缘层，然后除去介电绝缘层中的氢键。所形成的电介质层优选为含有Si-O-H结构的HSQ膜。通过等离子体中的热处理，臭氧还原处理，离子注入工艺或电子束轰击，从电介质层除去氢。

3. 发明授权

US11064191B2 Method for encoding video information and method for decoding video information, and apparatus using same 有权
公开(公告)号：US11064191B2
公开(公告)日：2021-07-13
申请号：US14044542
申请日：2013-10-02
申请人： Se Yoon Jeong , Hui Yong Kim , Sung Chang Lim , Jin Ho Lee , Ha Hyun Lee , Jong Ho Kim , Jin Soo Choi , Jin Woong Kim , Chie Teuk Ahn , Gwang Hoon Park , Kyung Yong Kim , Han Soo Lee , Tae Ryong Kim
发明人： Se Yoon Jeong , Hui Yong Kim , Sung Chang Lim , Jin Ho Lee , Ha Hyun Lee , Jong Ho Kim , Jin Soo Choi , Jin Woong Kim , Chie Teuk Ahn , Gwang Hoon Park , Kyung Yong Kim , Han Soo Lee , Tae Ryong Kim
IPC分类号： H04N19/10 , H04N19/105 , H04N19/136 , H04N19/196 , H04N19/61 , H04N19/46
摘要： A method for coding image information includes generating prediction information by predicting information on a current coding unit, and determining whether the information on the current coding unit is the same as the prediction information. When the information on the current coding unit is the same as the prediction information, a flag indicating that the information on the current coding unit is the same as the prediction information is coded and transmitted. When the information on the current coding unit is not the same as the prediction information, a flag indicating that the information on the current coding unit is not the same as the prediction information and the information on the current coding unit are coded and transmitted. At the generating of the prediction information, the prediction information is generated by using the information on the coding unit neighboring to the current coding unit.

4. 发明授权

US09955155B2 Method for encoding video information and method for decoding video information, and apparatus using same 有权
公开(公告)号：US09955155B2
公开(公告)日：2018-04-24
申请号：US13977520
申请日：2011-12-30
申请人： Se Yoon Jeong , Hui Yong Kim , Sung Chang Lim , Jin Ho Lee , Ha Hyun Lee , Jong Ho Kim , Jin Soo Choi , Jin Woong Kim , Chie Teuk Ahn , Gwang Hoon Park , Kyung Yong Kim , Han Soo Lee , Tae Ryong Kim
发明人： Se Yoon Jeong , Hui Yong Kim , Sung Chang Lim , Jin Ho Lee , Ha Hyun Lee , Jong Ho Kim , Jin Soo Choi , Jin Woong Kim , Chie Teuk Ahn , Gwang Hoon Park , Kyung Yong Kim , Han Soo Lee , Tae Ryong Kim
IPC分类号： H04N11/04 , H04N19/50 , H04N19/196 , H04N19/105 , H04N19/61
CPC分类号： H04N19/10 , H04N19/105 , H04N19/196 , H04N19/197 , H04N19/61
摘要： Disclosed herein is a method for coding image information, including: generating prediction information by predicting information on a current coding unit; and determining whether the information on the current coding unit is the same as the prediction information, wherein when the information on the current coding unit is the same as the prediction information, a flag indicating that the information on the current coding unit is the same as the prediction information is coded and transmitted, and when the information on the current coding unit is not the same as the prediction information, the flag indicating that the information on the current coding unit is not the same as the prediction information and the information on the current coding unit are coded and transmitted.

5. 发明申请

US20050101127A1 Method of manufacturing semiconductor device that includes forming self-aligned contact pad 失效
标题翻译：包括形成自对准接触垫的半导体器件的制造方法
公开(公告)号：US20050101127A1
公开(公告)日：2005-05-12
申请号：US10957305
申请日：2004-09-30
申请人： Jae-Hee Hwang , Jeong-Yun Lee , Tae-Ryong Kim , Yong-Hyeon Park
发明人： Jae-Hee Hwang , Jeong-Yun Lee , Tae-Ryong Kim , Yong-Hyeon Park
IPC分类号： H01L21/28 , H01L21/302 , H01L21/311 , H01L21/336 , H01L21/4763 , H01L21/60 , H01L21/8242
CPC分类号： H01L27/10888 , H01L21/31144 , H01L21/76897 , H01L27/10855
摘要： According to some embodiments, a gate electrode structure including a gate electrode stack and a spacer, and source/drain region are formed on a semiconductor substrate. A first interlayer insulating layer having a thickness greater than that of the gate electrode structure is formed on the semiconductor substrate. On the first interlayer insulating layer, an etch inducing and focusing mask extending in a same direction as a length direction of the gate electrode structure and covering the gate electrode structure is formed. A second interlayer insulating layer is formed on the first interlayer insulating layer. A photoresist pattern is formed on the second interlayer insulating layer. The second interlayer insulating layer and the first interlayer insulating layer are sequentially etched using the photoresist pattern as an etch mask, thereby forming a SAC hole. A conductive material is used to fill in the SAC hole to form a SAC pad.
摘要翻译：根据一些实施例，在半导体衬底上形成包括栅电极堆叠和间隔物的栅电极结构以及源/漏区。在半导体衬底上形成厚度大于栅电极结构的第一层间绝缘层。在第一层间绝缘层上，形成沿与栅电极结构的长度方向相同的方向延伸且覆盖栅电极结构的蚀刻诱导和聚焦掩模。在第一层间绝缘层上形成第二层间绝缘层。在第二层间绝缘层上形成光刻胶图形。使用光致抗蚀剂图案作为蚀刻掩模，依次蚀刻第二层间绝缘层和第一层间绝缘层，从而形成SAC孔。使用导电材料填充SAC孔以形成SAC垫。

6. 发明授权

US06329294B1 Method for removing photoresist mask used for etching of metal layer and other etching by-products 有权
标题翻译：去除用于蚀刻金属层和其它蚀刻副产物的光致抗蚀剂掩模的方法
公开(公告)号：US06329294B1
公开(公告)日：2001-12-11
申请号：US09475188
申请日：1999-12-30
申请人： Tae-ryong Kim , Jae-pil Kim , Jong-sik Won , Ka-soon Yim
发明人： Tae-ryong Kim , Jae-pil Kim , Jong-sik Won , Ka-soon Yim
IPC分类号： H01L21302
CPC分类号： H01L21/02071 , H01L21/31138 , H01L21/32136
摘要： A photoresist mask removing method for effectively removing polymers produced as by-products during etching of a metal layer includes processing the polymers prior to removal to facilitate removal thereof. To remove the photoresist mask remaining on a semiconductor substrate after the metal layer is dry-etched in an etching chamber, the semiconductor substrate is preferably conveyed from the etching chamber to an ashing chamber without vacuum break. The semiconductor substrate is pretreated by supplying N2 gas into the ashing chamber under the vacuum state without applying RF power to the ashing chamber to blow the N2 gas on the semiconductor substrate heated up to a predetermined temperature. This pretreatment modifies the polymer by-products to facilitate removal thereof during ashing. The photoresist mask and the polymer by-products are removed by ashing in the ashing chamber.
摘要翻译：用于有效去除在金属层蚀刻期间作为副产物生产的聚合物的光致抗蚀剂掩模去除方法包括在除去之前加工聚合物以便于其去除。为了在蚀刻室中干蚀刻金属层之后去除保留在半导体衬底上的光致抗蚀剂掩模，半导体衬底优选地从蚀刻室传送到灰化室而没有真空断裂。通过在真空状态下将氮气供给到灰化室中而对灰化室施加RF功率以将加热到预定温度的半导体衬底上的N 2气吹入半导体衬底来预处理。该预处理改变了聚合物副产物，以便在灰化期间将其去除。光致抗蚀剂掩模和聚合物副产物通过灰化室中的灰化除去。

7. 发明授权

US06236903B1 Multiple reaction chamber system having wafer recognition system and method for processing wafer using same 有权
标题翻译：具有晶片识别系统的多反应室系统及使用其的晶片处理方法
公开(公告)号：US06236903B1
公开(公告)日：2001-05-22
申请号：US09160093
申请日：1998-09-25
申请人： Do-hyeong Kim , Tae-ryong Kim , Byeung-wook Choi , Kwang-jin Jung
发明人： Do-hyeong Kim , Tae-ryong Kim , Byeung-wook Choi , Kwang-jin Jung
IPC分类号： G06F1900
CPC分类号： H01L21/67294 , G06K9/00 , Y10S414/136
摘要： A multiple reaction chamber system includes a transfer chamber, a load lock chamber connected to the transfer chamber, and a plurality of reaction chambers connected to the transfer chamber. An alignment chamber is connected to the transfer chamber, disposed along a path of wafer transfer from the load lock chamber to the plurality of reaction chambers, and includes a wafer aligner. A wafer recognition, disposed along a post-aligner portion of the path of wafer transfer system, recognizes an identification code of an individual wafer. A controlling system is in data communication with the wafer recognition system for selecting a selected chamber of the plurality of reaction chambers into which the individual wafer is to be transferred. Because individual wafers can be associated with each reaction chamber, a defective reaction chamber can be identified immediately and its use discontinued so that unproductive operations can be eliminated.
摘要翻译：多反应室系统包括传送室，连接到传送室的负载锁定室和连接到传送室的多个反应室。对准室连接到传送室，沿着晶片从负载锁定室传递到多个反应室的路径设置，并且包括晶片对准器。沿着晶片传送系统的路径的对准后部分布置的晶片识别识别单个晶片的识别码。控制系统与晶片识别系统进行数据通信，用于选择要转移单个晶片的多个反应室的选定室。因为单个晶片可以与每个反应室相关联，所以可以立即识别有缺陷的反应室，并且其使用停止，从而可以消除非生产性操作。

8. 发明授权

US6144792A Device for fixing the optical elements of an optical fiber amplifier 失效
标题翻译：用于固定光纤放大器的光学元件的装置
公开(公告)号：US6144792A
公开(公告)日：2000-11-07
申请号：US958211
申请日：1997-10-27
申请人： Tae-Ryong Kim , Mi-Young Hong , Chan-Sik Park
发明人： Tae-Ryong Kim , Mi-Young Hong , Chan-Sik Park
IPC分类号： G02B6/00 , G02B6/24 , G02B6/44 , G02B6/46 , H01S3/06 , H01S3/067 , H01S3/10 , G02B6/36
CPC分类号： H01S3/06704 , G02B6/4454
摘要： A device for fixing the optical elements of an optical fiber amplifier in a packaging box comprises a central opening provided in the packaging box for making a connection with an electronic circuit, an optical fiber holder for holding the erbium doped optical fiber around the central opening, a plurality of guide supports provided in the upper and lower sides of the optical fiber holder for holding the optical isolators, wavelength division multiplexers and optical taps, and protectors provided in the left and right sides of the optical fiber holder for holding the thermocontractile tubes.
摘要翻译：用于将光纤放大器的光学元件固定在包装盒中的装置包括设置在用于与电子电路连接的包装盒中的中央开口，用于将掺铒光纤保持在中心开口周围的光纤保持器，设置在光纤保持器的上侧和下侧的多个引导支撑件，用于保持光隔离器，波分复用器和光学抽头以及设置在用于保持热收缩管的光纤保持器的左侧和右侧的保护器。

9. 发明授权

US6098826A Communications equipment housing 失效
标题翻译：通讯设备住房
公开(公告)号：US6098826A
公开(公告)日：2000-08-08
申请号：US106100
申请日：1998-06-29
申请人： Tae-Ryong Kim
发明人： Tae-Ryong Kim
IPC分类号： H04Q1/04 , H02G3/08 , H04Q1/02 , H05K7/18 , B65D6/00
CPC分类号： H05K7/186 , H02G3/081 , H04Q1/02 , H04Q2201/10
摘要： A communications equipment housing may be constructed using an upper plate, four vertical members extending downward from the four corners of the upper plate and attach to a lower plate. A front side plate and a rear side plate are attached to the sides of the housing and two lateral side plates are installed on the sides between the front side plate and the rear side plate. Both lateral sides are composed of two main lateral side plates and an auxiliary lateral side plate that is located between the two main lateral side plates. An female groove is formed along an edge of each main lateral side plate in a direction perpendicular to the planes of the top and bottom plates. The auxiliary lateral side plate has projecting male protrusions formed along two lateral edges of the auxiliary plate in a direction perpendicular to the planes of the top and bottom plate. A lateral side plate for the housing is assembled by tightly engaging the male protrusions of the auxiliary lateral side plate into the female grooves of the main lateral side plates. This allows for the simple adjustment of the housing to accommodate electronic components of greater number or size.
摘要翻译：通信设备壳体可以使用上板构造，四个垂直构件从上板的四个角向下延伸并附接到下板。前侧板和后侧板安装在壳体的侧面，并且两个侧面板安装在前侧板和后侧板之间的侧面上。两个横向侧面由位于两个主侧面板之间的两个主横向侧板和辅助横向侧板组成。在每个主侧板的边缘沿垂直于顶板和底板的平面的方向形成阴凹槽。辅助侧面板具有沿着与顶板和底板的平面垂直的方向沿着辅助板的两个侧边缘形成的突出的阳突起。用于壳体的侧面侧板通过将辅助侧面板的凸形凸起紧密地接合到主侧面板的凹槽中来组装。这允许简单地调整壳体以容纳更大数量或尺寸的电子部件。

10. 发明授权

US5534728A Semiconductor device having a corrosion-resistant metal wiring layer 失效
标题翻译：具有耐腐蚀金属布线层的半导体装置
公开(公告)号：US5534728A
公开(公告)日：1996-07-09
申请号：US947640
申请日：1992-09-21
申请人： Tae-ryong Kim , Hee-su Park , Dai-sick Moon
发明人： Tae-ryong Kim , Hee-su Park , Dai-sick Moon
IPC分类号： H01L21/3213 , H01L21/3205 , H01L23/00 , H01L23/52 , H01L27/02
CPC分类号： H01L23/564 , H01L2924/0002
摘要： A semiconductor device includes a metal wiring layer having a plurality of parallel, actual metal lines, with an endmost one of the actual metal lines being disposed adjacent a wiring-free region. The actual metal lines are electrically connected to an active circuit portion of the semiconductor device. At least one dummy metal line is interposed between the endmost one of the actual metal lines and the wiring-free region, with the at least one dummy metal line being disconnected from the active circuit portion. The dummy metal line(s) serve to prevent corrosion of the actual metal lines when the metal wiring layer is patterned by an etching process.
摘要翻译：半导体器件包括具有多个平行的实际金属线的金属布线层，其中最实际的金属线之一被布置在邻近无布线区域。实际的金属线电连接到半导体器件的有源电路部分。至少一个虚拟金属线介于实际金属线中的最末端之一和无布线区域之间，至少一个虚拟金属线与有源电路部分断开。当通过蚀刻工艺图案化金属布线层时，虚拟金属线用于防止实际金属线的腐蚀。

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