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1. 发明申请

US20100039543A1 SOLID-STATE IMAGE SENSOR AND DRIVING METHOD THEREOF, AND IMAGE SENSOR 有权
标题翻译：固态图像传感器及其驱动方法和图像传感器
公开(公告)号：US20100039543A1
公开(公告)日：2010-02-18
申请号：US12524981
申请日：2007-06-28
申请人： Takahiro Muroshima , Yasuyuki Endoh
发明人： Takahiro Muroshima , Yasuyuki Endoh
IPC分类号： H04N5/335
CPC分类号： H04N5/3651 , H04N5/3598 , H04N5/3741 , H04N5/37452
摘要： A solid-state image sensor includes: a plurality of pixels, each having a photodiode, a floating diffusion, a transfer transistor, a reset transistor, and an amplifying transistor; vertical signal lines 31 for receiving signals from the plurality of pixels; sampling capacitors 62; circuits 78 for comparing a voltage on a corresponding one of the vertical signal lines 31 with a reference voltage to determine whether the voltage on the corresponding vertical signal line 31 is higher or lower than the reference voltage; and clip circuits 79 for outputting a clip voltage Vclip to a corresponding one of the sampling capacitors 62 based on the output of a corresponding one of the circuits 78. A voltage on each vertical signal line in the state where the signal accumulated in a corresponding photodiode has been transferred to a corresponding floating diffusion, can be used as a comparison voltage of each column.
摘要翻译：固态图像传感器包括：多个像素，每个具有光电二极管，浮动扩散，传输晶体管，复位晶体管和放大晶体管; 用于从多个像素接收信号的垂直信号线31; 采样电容器62; 电路78，用于将垂直信号线31中相应的一个电压与基准电压进行比较，以确定对应的垂直信号线31上的电压是否高于或低于参考电压; 以及夹持电路79，用于根据电路78的对应的一个的输出，将片钳电压Vclip输出到对应的一个采样电容器62.在累积在对应的光电二极管中的信号的状态下的每个垂直信号线上的电压已经转移到相应的浮动扩散，可以用作每列的比较电压。

2. 发明申请

US20070247535A1 Solid-state image sensing device and image sensing device 有权
标题翻译：固态图像感测装置和图像感测装置
公开(公告)号：US20070247535A1
公开(公告)日：2007-10-25
申请号：US11797128
申请日：2007-05-01
申请人： Hiroshi Yoshida , Yoshiyuki Matsunaga , Takahiro Muroshima
发明人： Hiroshi Yoshida , Yoshiyuki Matsunaga , Takahiro Muroshima
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H03F3/082 , H03F2200/498 , H03F2200/75 , H04N5/378
摘要： A solid-state image sensing device includes: a pixel array in which pixels performing photoelectric conversion are arranged in rows and columns; and a column amplification section in which an image signal output from each pixel is amplified. The column amplification section includes amplifiers each of which is provided for each column, and the column amplification section is connected to a power supply voltage feed section and the ground. An impedance on the power supply side of the amplifier is greater than an impedance on the ground side.
摘要翻译：固态图像感测装置包括：像素阵列，其中执行光电转换的像素被排列成行和列; 以及其中从每个像素输出的图像信号被放大的列放大部分。列放大部分包括为每列提供的放大器，列放大部分连接到电源电压馈送部分和地。放大器电源侧的阻抗大于接地侧的阻抗。

3. 发明授权

US08045032B2 Solid-state imaging device having a voltage clipping circuit to prevent image defects and driving method thereof 有权
标题翻译：具有用于防止图像缺陷的电压削波电路的固态成像装置及其驱动方法
公开(公告)号：US08045032B2
公开(公告)日：2011-10-25
申请号：US12176551
申请日：2008-07-21
申请人： Takahiro Muroshima , Yasuyuki Endoh , Masashi Murakami
发明人： Takahiro Muroshima , Yasuyuki Endoh , Masashi Murakami
IPC分类号： H04N3/14 , H04N5/335 , H01L27/00
CPC分类号： H04N5/3742 , H04N5/3575 , H04N5/3658 , H04N5/378
摘要： It is an object of the present invention to provide a solid-state imaging device capable of prevent image defects from appearing in an outputted image while suppressing increase in a layout area with a simple circuit structure and is an MOS solid-state imaging device. The MOS solid-state imaging device includes pixels which outputs signals corresponding to intensity of incident light, vertical signal lines which are respectively provided to columns of the pixels and each of which transmits the signals from said pixels in a column direction, and column amplifier circuits that amplify the signals from the pixels and are respectively connected to the vertical signal lines, and each of the column amplifier circuits includes a voltage clipping circuit includes a voltage clipping circuit which limits a maximum output voltage of said column amplifier circuit.
摘要翻译：本发明的目的是提供一种固态成像装置，其能够通过简单的电路结构抑制布局区域的增加，并且是MOS固态成像装置，从而防止在输出图像中出现图像缺陷。 MOS固态成像装置包括输出对应于入射光强度的信号的像素，分别提供给像素列的垂直信号线，并且每个像素在列方向上从所述像素传输信号，列列放大器电路放大来自像素的信号并且分别连接到垂直信号线，并且每个列放大器电路包括电压限幅电路，其包括限制所述列放大器电路的最大输出电压的电压限幅电路。

4. 发明授权

US07791660B2 Solid-state image sensing device and image sensing device 有权
标题翻译：固态图像感测装置和图像感测装置
公开(公告)号：US07791660B2
公开(公告)日：2010-09-07
申请号：US11797128
申请日：2007-05-01
申请人： Hiroshi Yoshida , Yoshiyuki Matsunaga , Takahiro Muroshima
发明人： Hiroshi Yoshida , Yoshiyuki Matsunaga , Takahiro Muroshima
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/335 , H03F3/082 , H03F2200/498 , H03F2200/75 , H04N5/378
摘要： A solid-state image sensing device includes: a pixel array in which pixels performing photoelectric conversion are arranged in rows and columns; and a column amplification section in which an image signal output from each pixel is amplified. The column amplification section includes amplifiers each of which is provided for each column, and the column amplification section is connected to a power supply voltage feed section and the ground. An impedance on the power supply side of the amplifier is greater than an impedance on the ground side.
摘要翻译：固态图像感测装置包括：像素阵列，其中执行光电转换的像素被排列成行和列; 以及其中从每个像素输出的图像信号被放大的列放大部分。列放大部分包括为每列提供的放大器，列放大部分连接到电源电压馈送部分和地。放大器电源侧的阻抗大于接地侧的阻抗。

5. 发明申请

US20090033782A1 SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREOF 有权
标题翻译：固态成像装置及其驱动方法
公开(公告)号：US20090033782A1
公开(公告)日：2009-02-05
申请号：US12176551
申请日：2008-07-21
申请人： Takahiro Muroshima , Yasuyuki Endoh , Masashi Murakami
发明人： Takahiro Muroshima , Yasuyuki Endoh , Masashi Murakami
IPC分类号： H04N5/335
CPC分类号： H04N5/3742 , H04N5/3575 , H04N5/3658 , H04N5/378
摘要： It is an object of the present invention to provide a solid-state imaging device capable of prevent image defects from appearing in an outputted image while suppressing increase in a layout area with a simple circuit structure and is an MOS solid-state imaging device. The MOS solid-state imaging device includes pixels which outputs signals corresponding to intensity of incident light, vertical signal lines which are respectively provided to columns of the pixels and each of which transmits the signals from said pixels in a column direction, and column amplifier circuits that amplify the signals from the pixels and are respectively connected to the vertical signal lines, and each of the column amplifier circuits includes a voltage clipping circuit includes a voltage clipping circuit which limits a maximum output voltage of said column amplifier circuit.
摘要翻译：本发明的目的是提供一种固态成像装置，其能够通过简单的电路结构抑制布局区域的增加，并且是MOS固态成像装置，从而防止在输出图像中出现图像缺陷。 MOS固态成像装置包括输出对应于入射光强度的信号的像素，分别提供给像素列的垂直信号线，并且每个像素在列方向上从所述像素传输信号，列列放大器电路放大来自像素的信号并且分别连接到垂直信号线，并且每个列放大器电路包括电压限幅电路，其包括限制所述列放大器电路的最大输出电压的电压限幅电路。

6. 发明申请

US20090009643A1 MOS TYPE SOLID-STATE IMAGE PICKUP DEVICE, METHOD FOR DRIVING SUCH MOS TYPE SOLID-STATE IMAGE PICKUP DEVICE, AND CAMERA 审中-公开
标题翻译： MOS型固态图像拾取装置，用于驱动这种MOS型固态图像拾取装置的方法和摄像机
公开(公告)号：US20090009643A1
公开(公告)日：2009-01-08
申请号：US11816789
申请日：2006-02-16
申请人： Takahiro Muroshima , Masashi Murakami
发明人： Takahiro Muroshima , Masashi Murakami
IPC分类号： H04N5/335
CPC分类号： H04N5/3765 , H04N5/3532 , H04N5/3658
摘要： A MOS type solid-state image pickup device includes a pixel unit which includes image pickup elements arranged two-dimensionally; a readout shift register; an electronic shutter shift register; a signal processing unit which extracts a pixel signal from the selected pixel; a horizontal shift register which outputs a column selection signal; and an amplifier circuit which amplifies the extracted pixel output signal. Each of the shift registers has a function of generating a dummy pulse during a blanking period. When the blanking period occurs after the completion of scanning up to the last line, a selection signal is outputted alternately to the last line and the second-from-the-last line of the shift register.
摘要翻译： MOS型固态摄像装置包括：像素单元，其包括二维布置的图像拾取元件; 读出移位寄存器; 电子快门移位寄存器; 信号处理单元，从所选择的像素提取像素信号; 输出列选择信号的水平移位寄存器; 以及放大电路，放大所提取的像素输出信号。每个移位寄存器具有在消隐期间产生虚拟脉冲的功能。当在完成扫描到最后一行之后发生消隐期间时，选择信号被交替地输出到移位寄存器的最后一行和最后一行。

7. 发明授权

US08710421B2 Solid-state imaging device and imaging apparatus 有权
标题翻译：固态成像装置和成像装置
公开(公告)号：US08710421B2
公开(公告)日：2014-04-29
申请号：US13475158
申请日：2012-05-18
申请人： Takahiro Muroshima
发明人： Takahiro Muroshima
IPC分类号： H01L27/00 , H01J40/14 , H01L27/146
CPC分类号： H01L27/14609 , H01L27/14643 , H04N5/3577 , H04N5/374 , H04N5/376
摘要： A solid-state imaging device according to the present invention includes a pixel cell having a photodiode, a charge detection unit, an amplification transistor, a transfer transistor which transfers a signal charge to the charge detection unit in accordance with a transfer control signal, and a reset transistor which resets the charge detection unit in accordance with a reset control signal; a signal processing circuit which receives a pixel reset potential of the charge detection unit, and a pixel signal potential corresponding to the signal charge transferred to the charge detection unit; a charge pump circuit which steps up or steps down a potential of at least one of the transfer control signal and the reset control signal in accordance with a driving clock signal; and a control logic circuit which causes the driving clock signal to be stopped during a pixel reading time period.
摘要翻译：根据本发明的固态成像装置包括具有光电二极管的像素单元，电荷检测单元，放大晶体管，根据转移控制信号将信号电荷传送到电荷检测单元的转移晶体管，以及复位晶体管，其根据复位控制信号复位所述电荷检测单元; 接收电荷检测单元的像素复位电位的信号处理电路和与传送到电荷检测单元的信号电荷相对应的像素信号电位; 电荷泵电路，其根据驱动时钟信号升高或降低转移控制信号和复位控制信号中的至少一个的电位; 以及控制逻辑电路，其在像素读取时间段期间使驱动时钟信号停止。

8. 发明授权

US08068155B2 Solid-state image sensor and driving method thereof, and image sensor 有权
标题翻译：固态图像传感器及其驱动方法和图像传感器
公开(公告)号：US08068155B2
公开(公告)日：2011-11-29
申请号：US12524981
申请日：2007-06-28
申请人： Takahiro Muroshima , Yasuyuki Endoh
发明人： Takahiro Muroshima , Yasuyuki Endoh
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/3651 , H04N5/3598 , H04N5/3741 , H04N5/37452
摘要： A solid-state image sensor includes: a plurality of pixels, each having a photodiode, a floating diffusion, a transfer transistor, a reset transistor, and an amplifying transistor; vertical signal lines 31 for receiving signals from the plurality of pixels; sampling capacitors 62; circuits 78 for comparing a voltage on a corresponding one of the vertical signal lines 31 with a reference voltage to determine whether the voltage on the corresponding vertical signal line 31 is higher or lower than the reference voltage; and clip circuits 79 for outputting a clip voltage Vclip to a corresponding one of the sampling capacitors 62 based on the output of a corresponding one of the circuits 78. A voltage on each vertical signal line in the state where the signal accumulated in a corresponding photodiode has been transferred to a corresponding floating diffusion, can be used as a comparison voltage of each column.
摘要翻译：固态图像传感器包括：多个像素，每个具有光电二极管，浮动扩散，传输晶体管，复位晶体管和放大晶体管; 用于从多个像素接收信号的垂直信号线31; 采样电容器62; 用于将垂直信号线31中的一个垂直信号线31上的电压与参考电压进行比较的电路78，以确定对应的垂直信号线31上的电压是否高于或低于参考电压; 以及夹持电路79，用于根据电路78的对应的一个的输出，将片钳电压Vclip输出到对应的一个采样电容器62.在累积在对应的光电二极管中的信号的状态下的每个垂直信号线上的电压已经转移到相应的浮动扩散，可以用作每列的比较电压。

9. 发明授权

US07728895B2 Solid-state image sensing device having shared floating diffusion portions 有权
标题翻译：具有共享浮动扩散部分的固态图像感测装置
公开(公告)号：US07728895B2
公开(公告)日：2010-06-01
申请号：US11792856
申请日：2006-07-11
申请人： Shouzi Tanaka , Ryouhei Miyagawa , Kazunari Koga , Takahiro Muroshima , Kenji Watanabe
发明人： Shouzi Tanaka , Ryouhei Miyagawa , Kazunari Koga , Takahiro Muroshima , Kenji Watanabe
IPC分类号： H04N3/15 , H04N5/335
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14641 , H04N5/335 , H04N5/37457 , H04N5/3765
摘要： A solid-state image sensing device includes: a plurality of unit pixels 21 arranged in rows and columns each of which outputs a pixel signal according to incident light; and a plurality of floating diffusion portions 22 each of which receives the pixel signals. Each of the floating diffusion portions 22 is shared by two unit pixels 21 which are respectively arranged in adjacent rows and which are respectively adjacent columns.
摘要翻译：固态图像感测装置包括：排列成行和列的多个单位像素21，每个单元像素21根据入射光输出像素信号; 以及多个浮动扩散部分22，每个浮动扩散部分22接收像素信号。每个浮动扩散部分22由分别布置在相邻行中并分别相邻列的两个单位像素21共享。

10. 发明申请

US20120228476A1 SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS 有权
标题翻译：固态成像装置和成像装置
公开(公告)号：US20120228476A1
公开(公告)日：2012-09-13
申请号：US13475158
申请日：2012-05-18
申请人： Takahiro Muroshima
发明人： Takahiro Muroshima
IPC分类号： H01L27/148
CPC分类号： H01L27/14609 , H01L27/14643 , H04N5/3577 , H04N5/374 , H04N5/376
摘要： A solid-state imaging device according to the present invention includes a pixel cell having a photodiode, a charge detection unit, an amplification transistor, a transfer transistor which transfers a signal charge to the charge detection unit in accordance with a transfer control signal, and a reset transistor which resets the charge detection unit in accordance with a reset control signal; a signal processing circuit which receives a pixel reset potential of the charge detection unit, and a pixel signal potential corresponding to the signal charge transferred to the charge detection unit; a charge pump circuit which steps up or steps down a potential of at least one of the transfer control signal and the reset control signal in accordance with a driving clock signal; and a control logic circuit which causes the driving clock signal to be stopped during a pixel reading time period.
摘要翻译：根据本发明的固态成像装置包括具有光电二极管的像素单元，电荷检测单元，放大晶体管，根据转移控制信号将信号电荷传送到电荷检测单元的转移晶体管，以及复位晶体管，其根据复位控制信号复位所述电荷检测单元; 接收电荷检测单元的像素复位电位的信号处理电路和与传送到电荷检测单元的信号电荷相对应的像素信号电位; 电荷泵电路，其根据驱动时钟信号升高或降低转移控制信号和复位控制信号中的至少一个的电位; 以及控制逻辑电路，其在像素读取时间段期间使驱动时钟信号停止。

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