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1. 发明授权

US08164164B2 Semiconductor wafer, and semiconductor device formed therefrom 失效
标题翻译：半导体晶片和由其形成的半导体器件
公开(公告)号：US08164164B2
公开(公告)日：2012-04-24
申请号：US12887798
申请日：2010-09-22
申请人： Takashi Ohsumi
发明人： Takashi Ohsumi
IPC分类号： H01L23/544 , H01L23/48 , H01L23/29
CPC分类号： H01L23/585 , H01L23/3114 , H01L23/3192 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor wafer has a substrate, and a plurality of active areas formed on the substrate. Integrated circuits are formed in the active areas. The semiconductor wafer also has dicing areas formed between the adjacent active areas. A seal ring is formed along the edge (periphery) of each active area. The semiconductor wafer also has interconnects formed closely to the inside of the seal ring. A protective layer covers the active areas. A protective film is formed on the protective layer at the locations of the active areas. The semiconductor wafer also has other interconnects formed on the protective film for electrical connection to the integrated circuits. Preferably, when the aspect ratio of a groove formed in the protective layer between the seal ring and the interconnect is 0.5 or more, this groove is covered with the protective film.
摘要翻译：半导体晶片具有基板和形成在基板上的多个有源区域。集成电路形成在有源区。半导体晶片还具有形成在相邻的有源区域之间的切割区域。沿着每个活动区域的边缘（周边）形成密封环。半导体晶片还具有与密封环的内部紧密相连的互连。保护层覆盖有源区域。在有源区域的位置上的保护层上形成保护膜。半导体晶片还具有形成在保护膜上的用于与集成电路电连接的其它互连。优选地，当形成在密封环和互连件之间的保护层中的槽的纵横比为0.5或更大时，该槽被保护膜覆盖。

2. 发明授权

US07667315B2 Semiconductor device having a frame portion and an opening portion with mountable semiconductor chips therein 有权
标题翻译：具有框架部分和其中具有可安装半导体芯片的开口部分的半导体器件
公开(公告)号：US07667315B2
公开(公告)日：2010-02-23
申请号：US11364008
申请日：2006-03-01
申请人： Takashi Ohsumi
发明人： Takashi Ohsumi
IPC分类号： H01L23/48
CPC分类号： H01L23/5389 , H01L23/13 , H01L24/24 , H01L24/25 , H01L24/82 , H01L24/94 , H01L24/97 , H01L25/105 , H01L2223/6677 , H01L2224/04105 , H01L2224/05001 , H01L2224/05008 , H01L2224/05026 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05569 , H01L2224/05644 , H01L2224/05655 , H01L2224/12105 , H01L2224/24137 , H01L2224/24147 , H01L2224/24195 , H01L2224/24227 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/73267 , H01L2224/82039 , H01L2224/92244 , H01L2224/94 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01021 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/14 , H01L2924/1461 , H01L2924/15153 , H01L2924/15165 , H01L2924/1517 , H01L2924/15311 , H01L2924/157 , H01L2924/15787 , H01L2924/19041 , H01L2924/19042 , H01L2924/30105 , H01L2924/3025 , H01L2224/82 , H01L2924/00014
摘要： A semiconductor chip includes a semiconductor substrate having an opening portion and a frame portion defining a periphery of the opening portion. At least one electric element is provided on the frame portion, and has at least one electrode terminal. A first insulation film is formed on the frame portion so that the electrode terminal is partially exposed at the first insulation film to form a plurality of electrode pads.
摘要翻译：半导体芯片包括具有开口部分和限定开口部分周边的框架部分的半导体基板。至少一个电气元件设置在框架部分上，并具有至少一个电极端子。第一绝缘膜形成在框架部分上，使得电极端子部分地暴露在第一绝缘膜处以形成多个电极焊盘。

3. 发明授权

US07528005B2 Method of manufacturing chip size package semiconductor device without intermediate substrate 有权
标题翻译：无中间基板的芯片尺寸封装半导体器件的制造方法
公开(公告)号：US07528005B2
公开(公告)日：2009-05-05
申请号：US10856933
申请日：2004-06-01
申请人： Yoshikazu Takahashi , Takashi Ohsumi
发明人： Yoshikazu Takahashi , Takashi Ohsumi
IPC分类号： H01L21/00
CPC分类号： H01L23/3107 , H01L23/3114 , H01L24/24 , H01L24/94 , H01L24/97 , H01L25/0652 , H01L25/0657 , H01L2224/0401 , H01L2224/04105 , H01L2224/12105 , H01L2224/14181 , H01L2224/16145 , H01L2224/24146 , H01L2224/274 , H01L2224/32145 , H01L2224/32225 , H01L2224/73209 , H01L2224/73253 , H01L2224/73259 , H01L2224/73267 , H01L2224/92244 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06582 , H01L2225/06586 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/1532 , H01L2924/181 , H01L2924/351 , H01L2224/81 , H01L2224/83 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes providing a first semiconductor chip having a plurality of pads, providing a second semiconductor chip having a plurality of pads, fixing the second semiconductor chip over a main surface of the first semiconductor chip, forming an insulating layer between the first semiconductor chip and the second semiconductor chip, forming a plurality of conductive posts over the main surface of the first semiconductor chip and a main surface of the second semiconductor chip, electrically connecting the plurality of conductive posts to the plurality of pads on the first semiconductor chip and the plurality of pads on the second semiconductor chip and covering the main surfaces of the first and second semiconductor chips with a resin, the resin partially covering the plurality of conductive posts.
摘要翻译：一种制造半导体器件的方法包括提供具有多个焊盘的第一半导体芯片，提供具有多个焊盘的第二半导体芯片，将第二半导体芯片固定在第一半导体芯片的主表面上，在第一半导体芯片的主表面之间形成绝缘层，第一半导体芯片和第二半导体芯片，在第一半导体芯片的主表面和第二半导体芯片的主表面上形成多个导电柱，将多个导电柱电连接到第一半导体芯片上的多个焊盘半导体芯片和第二半导体芯片上的多个焊盘，并且用树脂覆盖第一和第二半导体芯片的主表面，树脂部分地覆盖多个导电柱。

4. 发明申请

US20090053856A1 SEMICONDUCTOR DEVICE COMPRISING LIGHT-EMITTING ELEMENT AND LIGHT-RECEIVING ELEMENT, AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：包含发光元件和光接收元件的半导体器件及其制造方法
公开(公告)号：US20090053856A1
公开(公告)日：2009-02-26
申请号：US12261399
申请日：2008-10-30
申请人： Takashi Ohsumi
发明人： Takashi Ohsumi
IPC分类号： H01L21/50
CPC分类号： H01L31/0203 , H01L21/56 , H01L23/3128 , H01L24/48 , H01L24/97 , H01L27/14618 , H01L27/14625 , H01L27/14683 , H01L27/14685 , H01L31/02325 , H01L2224/16 , H01L2224/48091 , H01L2224/48227 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/12041 , H01L2924/15192 , H01L2924/1532 , H01L2924/15788 , H01L2924/16195 , H01L2224/81 , H01L2924/00 , H01L2224/0401 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes a substrate for transmitting light, a wiring layer provided on the substrate, a semiconductor chip formed on the wiring layer, a columnar electrode, a sealant, and an external connection terminal electrically connected to the semiconductor chip via the wiring layer and protruding electrode. The device includes a cut surface formed by dicing and constituted by only the substrate and the sealant. Since the cut surface has a single-layer structure as a result of forming the sealant in a single step, moisture cannot infiltrate through the sealant, hence a device resistant to corrosion and operational defects is provided.
摘要翻译：半导体器件包括用于透射光的衬底，设置在衬底上的布线层，形成在布线层上的半导体芯片，柱状电极，密封剂和经由布线层电连接到半导体芯片的外部连接端子，以及突出电极。该装置包括通过切割形成的切割表面，并且仅由基底和密封剂构成。由于在单个步骤中形成密封剂的结果是切割表面具有单层结构，所以水分不能渗透通过密封剂，因此提供了耐腐蚀和操作缺陷的装置。

5. 发明授权

US07045908B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07045908B2
公开(公告)日：2006-05-16
申请号：US10747317
申请日：2003-12-30
申请人： Takashi Ohsumi
发明人： Takashi Ohsumi
IPC分类号： H01L23/48
CPC分类号： H01L24/02 , H01L23/3114 , H01L23/544 , H01L24/10 , H01L24/13 , H01L2223/5442 , H01L2223/54426 , H01L2223/54473 , H01L2224/0231 , H01L2224/0401 , H01L2224/05548 , H01L2224/05557 , H01L2224/13 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/014 , H01L2924/05042 , H01L2924/00
摘要： A semiconductor device which is manufactured through a process of forming a second structure on a first structure, by using a photolithography technique, the semiconductor device includes a mark which is provided at a part of the first structure to be covered by the second structure and which is necessary for forming the second structure.
摘要翻译：一种半导体器件，其通过使用光刻技术在第一结构上形成第二结构的工艺制造，所述半导体器件包括设置在第一结构的被第二结构覆盖的部分处的标记，是形成第二结构所必需的。

6. 发明授权

US06893943B2 Method of dividing a semiconductor wafer 有权
标题翻译：划分半导体晶片的方法
公开(公告)号：US06893943B2
公开(公告)日：2005-05-17
申请号：US10431816
申请日：2003-05-08
申请人： Takashi Ohsumi , Yuzo Kato
发明人： Takashi Ohsumi , Yuzo Kato
IPC分类号： H01L21/301 , H01L21/60 , H01L23/544
CPC分类号： H01L23/544 , H01L24/11 , H01L2223/5442 , H01L2223/54453 , H01L2223/5446 , H01L2223/5448 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05548 , H01L2224/1147 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14
摘要： A method for dividing a semiconductor wafer which is covered by an opaque resin in a dicing process includes forming marks on the semiconductor wafer, wherein the marks are distinguished from electrodes which are formed on the semiconductor wafer. According to the method, in a dicing process, separating semiconductor chips from the semiconductor wafer can be precisely achieved.
摘要翻译：在切割工艺中分割由不透明树脂覆盖的半导体晶片的方法包括在半导体晶片上形成标记，其中标记与形成在半导体晶片上的电极不同。根据该方法，在切割处理中，可以精确地实现半导体芯片与半导体晶片的分离。

7. 发明申请

US20050059200A1 Semiconductor apparatus and method for fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050059200A1
公开(公告)日：2005-03-17
申请号：US10957620
申请日：2004-10-05
申请人： Takashi Ohsumi
发明人： Takashi Ohsumi
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60 , H01L23/485 , H01L21/00
CPC分类号： H01L24/10 , H01L24/13 , H01L2224/13 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/351 , H01L2924/00
摘要： A semiconductor apparatus includes a semiconductor integrated circuit including a conductive pattern; an insulating layer which is formed on the semiconductor integrated circuit to forms a plurality of base members having uneven heights; an opening which is formed through the insulating layer to expose a part of the conductive pattern; and a conductive layer which is formed on the insulating layer and the opening, the conductive layer is extending from the exposed portion of the conductive pattern to the top surface of the highest base member. An electrode is composed of the insulating layer, the opening and the conductive layer.
摘要翻译：半导体装置包括：包括导电图案的半导体集成电路; 绝缘层，其形成在所述半导体集成电路上以形成具有不均匀高度的多个基底构件; 通过所述绝缘层形成的露出一部分导电图案的开口; 以及形成在所述绝缘层和所述开口上的导电层，所述导电层从所述导电图案的所述露出部延伸到所述最高基材的顶面。电极由绝缘层，开口和导电层构成。

8. 发明申请

US20060065964A1 Semiconductor device comprising light-emitting element and light-receiving element, and manufacturing method therefor 审中-公开
标题翻译：包含发光元件和光接收元件的半导体器件及其制造方法
公开(公告)号：US20060065964A1
公开(公告)日：2006-03-30
申请号：US11229765
申请日：2005-09-20
申请人： Takashi Ohsumi
发明人： Takashi Ohsumi
IPC分类号： H01L23/48
CPC分类号： H01L31/0203 , H01L21/56 , H01L23/3128 , H01L24/48 , H01L24/97 , H01L27/14618 , H01L27/14625 , H01L27/14683 , H01L27/14685 , H01L31/02325 , H01L2224/16 , H01L2224/48091 , H01L2224/48227 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01018 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/12041 , H01L2924/15192 , H01L2924/1532 , H01L2924/15788 , H01L2924/16195 , H01L2224/81 , H01L2924/00 , H01L2224/0401 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes a substrate for transmitting light, a wiring layer provided on the substrate, a semiconductor chip formed on the wiring layer, a columnar electrode, a sealant, and an external connection terminal electrically connected to the semiconductor chip via the wiring layer and protruding electrode. The device includes a cut surface formed by dicing and constituted by only the substrate and the sealant. Since the cut surface has a single-layer structure as a result of forming the sealant in a single step, moisture cannot infiltrate through the sealant, hence a device resistant to corrosion and operational defects is provided.
摘要翻译：半导体器件包括用于透射光的衬底，设置在衬底上的布线层，形成在布线层上的半导体芯片，柱状电极，密封剂和经由布线层电连接到半导体芯片的外部连接端子，以及突出电极。该装置包括通过切割形成的切割表面，并且仅由基底和密封剂构成。由于在单个步骤中形成密封剂的结果是切割表面具有单层结构，所以水分不能渗透通过密封剂，因此提供了耐腐蚀和操作缺陷的装置。

9. 发明申请

US20050017356A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050017356A1
公开(公告)日：2005-01-27
申请号：US10866195
申请日：2004-06-14
申请人： Takashi Ohsumi
发明人： Takashi Ohsumi
IPC分类号： H01L23/12 , H01L21/60 , H01L23/31 , H01L23/485 , H01L23/48
CPC分类号： H01L24/10 , H01L23/3114 , H01L24/13 , H01L2224/05001 , H01L2224/05022 , H01L2224/05024 , H01L2224/05548 , H01L2224/05572 , H01L2224/13 , H01L2224/13099 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要： A semiconductor device includes a passivation film, an insulating film and an encapsulating layer, all of which are formed, in this order, on the surface of a semiconductor substrate provided with a connecting pad, and a bump electrode electrically connected to the connecting pad via a wiring passing through a first opening defined in the passivation film and a second opening defined in the insulating film. The bump electrode has a leading end portion exposed from the surface of the encapsulating layer. In the semiconductor device, all of a section of the first opening and all of a section of the second opening as viewed from the direction normal to the surface of the semiconductor substrate are set so as to be contained within a section of the bump electrode as viewed from the direction
摘要翻译：半导体器件包括钝化膜，绝缘膜和封装层，所有这些都依次形成在设置有连接焊盘的半导体衬底的表面上，以及凸块电极，电连接到连接焊盘通孔通过限定在钝化膜中的第一开口的布线和限定在绝缘膜中的第二开口。突起电极具有从封装层的表面露出的前端部。在半导体器件中，从垂直于半导体衬底的表面的方向观察，第一开口的一部分和第二开口的所有部分被设置为包含在凸块电极的一部分内，作为从方向看

10. 发明授权

US06303470B1 Semiconductor wafer and method for manufacturing semiconductor devices 有权
标题翻译：半导体晶片及半导体器件的制造方法
公开(公告)号：US06303470B1
公开(公告)日：2001-10-16
申请号：US09521888
申请日：2000-03-09
申请人： Takashi Ohsumi , Yuzo Kato
发明人： Takashi Ohsumi , Yuzo Kato
IPC分类号： H01L2144
CPC分类号： H01L23/544 , H01L24/11 , H01L2223/5442 , H01L2223/54453 , H01L2223/5446 , H01L2223/5448 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05548 , H01L2224/1147 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14
摘要： A method for dividing a semiconductor wafer which is covered by an opaque resin in a dicing process includes forming marks on the semiconductor wafer, wherein the marks are distinguished from electrodes which are formed on the semiconductor wafer. According to the method, in a dicing process, separating semiconductor chips from the semiconductor wafer can be precisely achieved.
摘要翻译：在切割工艺中分割由不透明树脂覆盖的半导体晶片的方法包括在半导体晶片上形成标记，其中标记与形成在半导体晶片上的电极不同。根据该方法，在切割处理中，可以精确地实现半导体芯片与半导体晶片的分离。

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