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1. 发明授权

US11495203B2 Sound absorber, electronic device with sound absorbing device, and image forming apparatus with sound absorber 有权
公开(公告)号：US11495203B2
公开(公告)日：2022-11-08
申请号：US16701814
申请日：2019-12-03
申请人： Masahiro Ishida , Naoki Matsuda , Hiroshi Ishii , Kohta Takenaka , Keisuke Shimizu , Shogo Sakamoto , Takayuki Isaka
发明人： Masahiro Ishida , Naoki Matsuda , Hiroshi Ishii , Kohta Takenaka , Keisuke Shimizu , Shogo Sakamoto , Takayuki Isaka
IPC分类号： G10K11/172 , G03G21/16 , G03G21/00
摘要： A sound absorber includes at least one cavity and at least one mouth to communicate the at least one cavity with an outside of the sound absorber. The at least one cavity includes a top surface, a bottom surface, and a side wall. The top surface includes the mouth. The bottom surface opposes the top surface. The side wall is extended to connect the top surface with the bottom surface. At least one of the top surface and the bottom surface is inclined with respect to the side wall.

2. 发明申请

US20180267455A1 IMAGE FORMING APPARATUS 审中-公开
公开(公告)号：US20180267455A1
公开(公告)日：2018-09-20
申请号：US15908916
申请日：2018-03-01
申请人： Takayuki ISAKA
发明人： Takayuki ISAKA
IPC分类号： G03G15/00
CPC分类号： G03G15/757 , G03G21/1647 , G03G21/1857
摘要： An image forming apparatus includes multiple image bearers, multiple image bearer gears, a drive source, an output gear, a drive transmission body, multiple relay gears, and multiple drive gears. A center of rotation of each of the multiple drive gears to which a driving force is transmitted from the drive source is located downstream from a corresponding one of the multiple relay gears in a rotation direction of the corresponding one of the multiple relay gears, relative to a virtual line segment connecting a center of rotation of the corresponding one of the multiple relay gears connected to the multiple drive gears and the center of rotation of a corresponding one of the multiple image bearer gears.

3. 发明申请

US20170221469A1 SOUND ABSORBER, ELECTRONIC DEVICE WITH SOUND ABSORBING DEVICE, AND IMAGE FORMING APPARATUS WITH SOUND ABSORBER 审中-公开
公开(公告)号：US20170221469A1
公开(公告)日：2017-08-03
申请号：US15415058
申请日：2017-01-25
申请人： Masahiro ISHIDA , Naoki MATSUDA , Hiroshi ISHII , Kohta TAKENAKA , Keisuke SHIMIZU , Shogo SAKAMOTO , Takayuki ISAKA
发明人： Masahiro ISHIDA , Naoki MATSUDA , Hiroshi ISHII , Kohta TAKENAKA , Keisuke SHIMIZU , Shogo SAKAMOTO , Takayuki ISAKA
IPC分类号： G10K11/172 , G10K11/168
摘要： A sound absorber includes at least one cavity and at least one mouth to communicate the at least one cavity with an outside of the sound absorber. The at least one cavity includes a top surface, a bottom surface, and a side wall. The top surface includes the mouth. The bottom surface opposes the top surface. The side wall is extended to connect the top surface with the bottom surface. At least one of the top surface and the bottom surface is inclined with respect to the side wall.

4. 发明申请

US20130037102A1 BACK ELECTRODE TYPE SOLAR CELL AND METHOD FOR PRODUCING BACK ELECTRODE TYPE SOLAR CELL 审中-公开
标题翻译：背电极型太阳能电池及其制造电极型太阳能电池的方法
公开(公告)号：US20130037102A1
公开(公告)日：2013-02-14
申请号：US13643329
申请日：2011-04-21
申请人： Takayuki Isaka
发明人： Takayuki Isaka
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/02168 , H01L31/02363 , H01L31/035281 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： There is provided a back electrode type solar cell including: a silicon substrate of a first conductivity type; an electrode for the first conductivity type and an electrode for a second conductivity type provided at a back surface opposite to a light-receiving surface of the silicon substrate; and a first conductivity type impurity diffusion layer and a second conductivity type impurity diffusion layer provided at the back surface of the silicon substrate, the first conductivity type impurity diffusion layer and the second conductivity type impurity diffusion layer being adjacently provided, the first conductivity type impurity diffusion layer being provided at a peripheral edge of the back surface of the silicon substrate, and a method for producing the back electrode type solar cell.
摘要翻译：提供了一种背电极型太阳能电池，包括：第一导电类型的硅衬底; 用于第一导电类型的电极和设置在与硅衬底的光接收表面相对的背面的第二导电类型的电极; 以及设置在硅衬底的背面的第一导电型杂质扩散层和第二导电型杂质扩散层，相邻地设置有第一导电型杂质扩散层和第二导电型杂质扩散层，第一导电型杂质扩散层设置在硅衬底的背面的外围边缘处，以及制造背面电极型太阳能电池的方法。

5. 发明授权

US10540953B2 Sound absorber, electronic device with sound absorbing device, and image forming apparatus with sound absorber 有权
公开(公告)号：US10540953B2
公开(公告)日：2020-01-21
申请号：US15415058
申请日：2017-01-25
申请人： Masahiro Ishida , Naoki Matsuda , Hiroshi Ishii , Kohta Takenaka , Keisuke Shimizu , Shogo Sakamoto , Takayuki Isaka
发明人： Masahiro Ishida , Naoki Matsuda , Hiroshi Ishii , Kohta Takenaka , Keisuke Shimizu , Shogo Sakamoto , Takayuki Isaka
IPC分类号： G10K11/172
摘要： A sound absorber includes at least one cavity and at least one mouth to communicate the at least one cavity with an outside of the sound absorber. The at least one cavity includes a top surface, a bottom surface, and a side wall. The top surface includes the mouth. The bottom surface opposes the top surface. The side wall is extended to connect the top surface with the bottom surface. At least one of the top surface and the bottom surface is inclined with respect to the side wall.

6. 发明申请

US20130247980A1 METHOD FOR FABRICATING BACK ELECTRODE TYPE SOLAR CELL, AND BACK ELECTRODE TYPE SOLAR CELL 审中-公开
标题翻译：用于制造背电极型太阳能电池和背电极型太阳能电池的方法
公开(公告)号：US20130247980A1
公开(公告)日：2013-09-26
申请号：US13990538
申请日：2011-12-02
申请人： Yuhji Yokosawa , Tsutomu Yamazaki , Hiroyuki Akada , Takayuki Isaka
发明人： Yuhji Yokosawa , Tsutomu Yamazaki , Hiroyuki Akada , Takayuki Isaka
IPC分类号： H01L31/0216
CPC分类号： H01L31/02168 , H01L31/0682 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A method for fabricating a back electrode type solar cell include the steps of applying a solution including a compound containing first conductivity type impurities, titanium alkoxide, and alcohol to a surface of a first conductivity type silicon substrate, and forming a light-receiving face diffusion layer and an anti-reflection film by subjecting the solution to heat treatment in a nitrogen atmosphere. There is also provided a back electrode type solar cell including a light-receiving face diffusion layer having a sheet resistance greater than or equal to 100 Ω/ and less than 250 Ω/.
摘要翻译：背面电极型太阳能电池的制造方法包括以下步骤：将含有第一导电型杂质，醇钛，醇的化合物的溶液涂布在第一导电型硅衬底的表面上，形成受光面扩散层和通过在氮气气氛中对溶液进行热处理的抗反射膜。还提供了一种背电极型太阳能电池，其包括具有大于或等于100Ω/小于250Ω/□的薄层电阻的光接收面扩散层。

7. 发明申请

US20100032012A1 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20100032012A1
公开(公告)日：2010-02-11
申请号：US12517008
申请日：2007-11-19
申请人： Takayuki Isaka , Yasushi Funakoshi , Masatsugu Kohira
发明人： Takayuki Isaka , Yasushi Funakoshi , Masatsugu Kohira
IPC分类号： H01L31/0216
CPC分类号： H01L31/02168 , C23C16/345 , C23C16/56 , H01L31/02167 , H01L31/022441 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： A solar cell (10) including a passivation film having a high effect for both a p region and an n region on a surface of a silicon substrate of the solar cell is provided. In the solar cell, a first passivation film made of a silicon nitride film is formed on a surface opposite to a light-receiving surface of the silicon substrate, and the first passivation film has a refractive index of not less than 2.6. Preferably, in the solar cell, a second passivation film including a silicon oxide film and/or an aluminum oxide film is formed between the silicon substrate and the first passivation film. Preferably, the solar cell is a back surface junction solar cell having a pn junction formed on the surface opposite to the light-receiving surface of the silicon substrate.
摘要翻译：提供了包括对太阳能电池的硅基板的表面上的p区域和n区域具有高效果的钝化膜的太阳能电池（10）。在太阳能电池中，在与硅衬底的光接收表面相对的表面上形成由氮化硅膜制成的第一钝化膜，并且第一钝化膜的折射率不小于2.6。优选地，在太阳能电池中，在硅衬底和第一钝化膜之间形成包括氧化硅膜和/或氧化铝膜的第二钝化膜。优选地，太阳能电池是在与硅衬底的光接收表面相对的表面上形成有pn结的背面结太阳能电池。

8. 发明授权

US08383930B2 Solar cell and method for producing solar cell 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US08383930B2
公开(公告)日：2013-02-26
申请号：US11665015
申请日：2005-10-13
申请人： Takayuki Isaka , Yoshiya Abiko , Yoshifumi Tonomura
发明人： Takayuki Isaka , Yoshiya Abiko , Yoshifumi Tonomura
IPC分类号： H01L31/052 , H01L31/0264 , H01L31/18
CPC分类号： H01L31/02168 , H01L31/02167 , Y02E10/50
摘要： Disclosed is a solar cell including a passivation film formed on a light-receiving surface of a silicon substrate, and an antireflection film formed on the passivation film, wherein the passivation film has a refractive index higher than that of the antireflection film. The passivation film and the antireflection film can each be made of a silicon nitride film.
摘要翻译：公开了一种太阳能电池，其包括形成在硅衬底的光接收表面上的钝化膜和形成在钝化膜上的抗反射膜，其中钝化膜的折射率高于抗反射膜的折射率。钝化膜和抗反射膜各自可以由氮化硅膜制成。

9. 发明申请

US20110120530A1 BACK SURFACE CONTACT TYPE SOLAR CELL, BACK SURFACE CONTACT TYPE SOLAR CELL WITH WIRING BOARD, SOLAR CELL STRING, AND SOLAR CELL MODULE 审中-公开
标题翻译：背面接触式太阳能电池，背面接触式太阳能电池，配线板，太阳能电池盒和太阳能电池模块
公开(公告)号：US20110120530A1
公开(公告)日：2011-05-26
申请号：US12674797
申请日：2008-07-25
申请人： Takayuki Isaka
发明人： Takayuki Isaka
IPC分类号： H01L31/0224 , H01L31/0203 , H01L31/042 , H01L31/048
CPC分类号： H01L31/0682 , B32B17/10018 , B32B17/10788 , B32B2333/08 , H01L31/022441 , H01L31/0516 , Y02E10/547
摘要： A back surface contact type solar cell having a first conductivity type region and second conductivity type region formed alternately at one surface of a semiconductor substrate, includes an electrode for first conductivity type arranged on the first conductivity type region, and an electrode for second conductivity type arranged on the second conductivity type region. The back surface contact type solar cell includes a first non-connection region between electrodes for second conductivity type adjacent in an aligning direction of the first conductivity type region and the second conductivity type region, impeding electrical connection with the electrode for first conductivity type, and a second non-connection region between electrodes for first conductivity type adjacent in the aligning direction, impeding electrical connection with the electrode for second conductivity type . A back surface contact type solar cell with a wiring board, a solar cell string, and a solar cell module are also provided.
摘要翻译：具有在半导体衬底的一个表面交替形成的第一导电类型区域和第二导电类型区域的背面接触型太阳能电池包括布置在第一导电类型区域上的用于第一导电类型的电极和用于第二导电类型的电极布置在第二导电类型区域上。背面接触型太阳能电池包括在与第一导电类型区域的排列方向相邻的第二导电类型的电极与第二导电类型区域之间的第一非连接区域，阻止与第一导电类型的电极的电连接，以及在对准方向上与第一导电类型相邻的电极之间的第二非连接区域，阻止与用于第二导电类型的电极的电连接。还提供了具有布线板，太阳能电池串和太阳能电池模块的背面接触型太阳能电池。

10. 发明申请

US20090007966A1 Solar cell and method for producing solar cell 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20090007966A1
公开(公告)日：2009-01-08
申请号：US11665015
申请日：2005-10-13
申请人： Takayuki Isaka , Yoshiya Abiko , Yoshifumi Tonomura
发明人： Takayuki Isaka , Yoshiya Abiko , Yoshifumi Tonomura
IPC分类号： H01L31/052 , H01L31/0264 , H01L31/18
CPC分类号： H01L31/02168 , H01L31/02167 , Y02E10/50
摘要： Disclosed is a solar cell including a passivation film (2) formed on a light-receiving surface of a silicon substrate (1), and an antireflection film (3) formed on the passivation film (2), wherein the passivation film (2) has a refractive index higher than that of the antireflection film (3). The passivation film (2) and the antireflection film (3) can each be made of a silicon nitride film.
摘要翻译：公开了一种太阳能电池，包括形成在硅衬底（1）的光接收表面上的钝化膜（2）和形成在钝化膜（2）上的抗反射膜（3），其中钝化膜（2）折射率高于抗反射膜（3）的折射率。钝化膜（2）和抗反射膜（3）均可以由氮化硅膜构成。

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