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1. 发明授权

US08877422B2 Resist underlayer film composition and patterning process using the same 有权
标题翻译：抗蚀剂下层膜组合物和使用其的图案化工艺
公开(公告)号：US08877422B2
公开(公告)日：2014-11-04
申请号：US13269290
申请日：2011-10-07
申请人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Toshihiko Fujii , Takeru Watanabe , Takeshi Kinsho
发明人： Tsutomu Ogihara , Daisuke Kori , Yusuke Biyajima , Toshihiko Fujii , Takeru Watanabe , Takeshi Kinsho
IPC分类号： G03F7/004 , G03F7/26 , G03F7/09
CPC分类号： G03F7/091 , G03F7/094
摘要： There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formula (1-1) and/or (1-2), and one or more kinds of compounds and/or equivalent bodies thereof represented by the following general formula (2). There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, namely, an underlayer film having optimum n-value and k-value, excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译：公开了一种抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或（1-2）表示的化合物缩合得到的聚合物，以及一种或多种更多种由下列通式（2）表示的化合物和/或其等价物。可以提供一种特别用于三层抗蚀剂工艺的下层膜组合物，其可以形成具有降低的反射率的下层膜，即具有最佳n值和k值的底层膜，优异的填充性，抗蚀性能，并且特别是在比60nm薄的高方位线中，特别是在蚀刻后不会引起线下落或摆动，以及使用其的图案化工艺。

2. 发明授权

US08685629B2 Resist pattern forming process 有权
标题翻译：抗蚀图案形成工艺
公开(公告)号：US08685629B2
公开(公告)日：2014-04-01
申请号：US13362294
申请日：2012-01-31
申请人： Keiichi Masunaga , Takeru Watanabe , Satoshi Watanabe , Daisuke Domon
发明人： Keiichi Masunaga , Takeru Watanabe , Satoshi Watanabe , Daisuke Domon
IPC分类号： G03F7/26
CPC分类号： G03F7/40 , G03F7/0045 , G03F7/0392
摘要： A resist pattern is formed by coating a chemically amplified positive resist composition onto a substrate and prebaking to form a resist film, exposing to high-energy radiation, baking and developing with a developer to form a resist pattern, and heating the pattern for profile correction to such an extent that the line width may not undergo a change of at least 10%. An amount of a softening accelerator having a molecular weight of up to 800 is added to the resist composition comprising (A) a base resin, (B) an acid generator, (C) a nitrogen-containing compound, and (D) an organic solvent.
摘要翻译：通过将化学放大的正性抗蚀剂组合物涂布在基材上并预烘烤以形成抗蚀剂膜，暴露于高能量辐射，用显影剂烘烤和显影以形成抗蚀剂图案并加热图案以进行轮廓校正来形成抗蚀剂图案达到线宽可能不会经历至少10％的变化的程度。将一定量的分子量高达800的软化促进剂加入到抗蚀剂组合物中，该抗蚀剂组合物包含（A）基础树脂，（B）酸产生剂，（C）含氮化合物和（D）有机溶剂。

3. 发明授权

US08628908B2 Chemically amplified resist composition and patterning process 有权
标题翻译：化学扩增抗蚀剂组合物和图案化工艺
公开(公告)号：US08628908B2
公开(公告)日：2014-01-14
申请号：US13406684
申请日：2012-02-28
申请人： Takeru Watanabe , Tomohiro Kobayashi , Masayoshi Sagehashi , Takeshi Nagata , Youichi Ohsawa , Ryosuke Taniguchi
发明人： Takeru Watanabe , Tomohiro Kobayashi , Masayoshi Sagehashi , Takeshi Nagata , Youichi Ohsawa , Ryosuke Taniguchi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/2041 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/11
摘要： A chemically amplified resist composition is provided comprising (A) a specific tertiary amine compound, (B) a specific acid generator, (C) a base resin having an acidic functional group protected with an acid labile group, which is substantially insoluble in alkaline developer and turns soluble in alkaline developer upon deprotection of the acid labile group, and (D) an organic solvent. The resist composition has a high resolution, improved defect control in the immersion lithography, and good shelf stability.
摘要翻译：提供一种化学放大抗蚀剂组合物，其包含（A）特定的叔胺化合物，（B）特定的酸发生剂，（C）具有由酸不稳定基团保护的酸性官能团的基础树脂，其基本上不溶于碱性显影剂并且在酸不稳定基团脱保护时变为可溶于碱性显影剂，和（D）有机溶剂。抗蚀剂组合物具有高分辨率，改善浸渍光刻中的缺陷控制，以及良好的储存稳定性。

4. 发明授权

US08603732B2 Resist underlayer film-forming composition, process for forming resist underlayer film and patterning process 有权
标题翻译：抗蚀剂下层膜形成组合物，形成抗蚀剂下层膜的工艺和图案化工艺
公开(公告)号：US08603732B2
公开(公告)日：2013-12-10
申请号：US12978978
申请日：2010-12-27
申请人： Tsutomu Ogihara , Takeru Watanabe , Takeshi Kinsho , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
发明人： Tsutomu Ogihara , Takeru Watanabe , Takeshi Kinsho , Katsuya Takemura , Toshihiko Fujii , Daisuke Kori
IPC分类号： G03F7/09 , G03F7/11 , G03F7/20 , G03F7/30 , G03F7/36
CPC分类号： G03F7/11 , B82Y10/00 , C08G61/02 , C08G2261/3424 , G03F7/0752 , H01L21/0332 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： There is disclosed a resist underlayer film-forming composition comprising, at least: a resin (A) obtained by condensing a compound represented by the following general formula (1) with a compound represented by the following general formula (2) by the aid of an acid catalyst; a compound (B) represented by the general formula (1); a fullerene compound (C); and an organic solvent. There can be a resist underlayer film composition in a multi-layer resist film to be used in lithography, which underlayer film is excellent in property for filling up a height difference of a substrate, possesses a solvent resistance, and is not only capable of preventing occurrence of twisting during etching of a substrate, but also capable of providing an excellently decreased pattern roughness; a process for forming a resist underlayer film by using the composition; and a patterning process.
摘要翻译：公开了一种抗蚀剂下层膜形成组合物，其至少包括：通过以下通式（1）表示的化合物与下列通式（2）表示的化合物缩合得到的树脂（A）：通过酸催化剂; 由通式（1）表示的化合物（B）; 富勒烯化合物（C）; 和有机溶剂。在光刻中使用的多层抗蚀剂膜中可以存在抗蚀剂下层膜组合物，该下层膜具有优异的填充基板的高度差的性能，具有耐溶剂性，并且不仅能够防止在蚀刻基板期间发生扭曲，而且能够提供优异的图案粗糙度; 通过使用该组合物形成抗蚀剂下层膜的方法; 和图案化过程。

5. 发明授权

US08420292B2 Polymer, resist composition, and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US08420292B2
公开(公告)日：2013-04-16
申请号：US13006598
申请日：2011-01-14
申请人： Yuji Harada , Takeru Watanabe , Takeshi Sasami , Yuuki Suka , Koji Hasegawa
发明人： Yuji Harada , Takeru Watanabe , Takeshi Sasami , Yuuki Suka , Koji Hasegawa
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： C08F14/18 , C08F220/28 , G03F7/0046 , G03F7/0395 , G03F7/0397 , G03F7/11 , G03F7/2041 , C08F2/00 , C08F220/24
摘要： A polymer comprising recurring units of formula (1) and having a solubility in alkaline developer which increases under the action of an alkaline developer is provided. The polymer has transparency to radiation of up to 200 nm and improved water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer to formulate a resist composition. R1 is H, F, methyl, or trifluoromethyl, R2 is a monovalent fluorinated hydrocarbon group, An is a (n+1)-valent hydrocarbon or fluorinated hydrocarbon group, and n is 1, 2 or 3.
摘要翻译：提供了包含式（1）的重复单元并且在碱性显影剂中具有在碱性显影剂的作用下增加的溶解度的聚合物。该聚合物对于高达200nm的辐射具有透明性，并且具有改善的防水性，水滑性，酸性和水解性，并且可用作配制抗蚀剂组合物的添加剂聚合物。 R1为H，F，甲基或三氟甲基，R2为单价氟化烃基，An为（n + 1）价烃基或氟化烃基，n为1,2或3。

6. 发明授权

US08367310B2 Pattern forming process and resist-modifying composition 有权
标题翻译：图案形成工艺和抗蚀剂改性组合物
公开(公告)号：US08367310B2
公开(公告)日：2013-02-05
申请号：US12708196
申请日：2010-02-18
申请人： Takeru Watanabe , Masashi Iio , Jun Hatakeyama , Tsunehiro Nishi , Yoshio Kawai
发明人： Takeru Watanabe , Masashi Iio , Jun Hatakeyama , Tsunehiro Nishi , Yoshio Kawai
IPC分类号： G03F7/26
CPC分类号： G03F7/0397 , G03F7/0035 , G03F7/40
摘要： A patterning process includes (1) coating and baking a first positive resist composition to form a first resist film, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) applying a resist-modifying composition to the first resist pattern and heating to modify the first resist pattern, (3) coating and baking a second positive resist composition to form a second resist film, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The modified first resist film has a contact angle with pure water of 50°-85°.
摘要翻译：图案化工艺包括（1）涂覆和烘烤第一正性抗蚀剂组合物以形成第一抗蚀剂膜，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物施加到第一抗蚀剂图案和加热以修饰第一抗蚀剂图案，（3）涂覆和烘烤第二正性抗蚀剂组合物以形成第二抗蚀剂膜，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。改性的第一抗蚀剂膜与纯水的接触角为50°-85°。

7. 发明申请

US20130005997A1 PREPARATION OF 2,2-BIS (FLUOROALKYL) OXIRANE AND PREPARATION OF PHOTOACID GENERATOR THEREFROM 有权
标题翻译： 2,2-BIS（氟烷基）氧化物的制备及其制备光电子发生器
公开(公告)号：US20130005997A1
公开(公告)日：2013-01-03
申请号：US13526569
申请日：2012-06-19
申请人： Masayoshi SAGEHASHI , Takeru WATANABE , Youichi OHSAWA , Koji HASEGAWA , Masaki OHASHI
发明人： Masayoshi SAGEHASHI , Takeru WATANABE , Youichi OHSAWA , Koji HASEGAWA , Masaki OHASHI
IPC分类号： C07C303/32 , C07D301/02
CPC分类号： C07D301/24 , C07C303/32 , C07C381/12 , C07C2603/74 , C07D303/08 , C07C309/08 , C07C309/12
摘要： A 2,2-bis(fluoroalkyl)oxirane (A) is prepared by reacting a fluorinated alcohol (1) with a chlorinating, brominating or sulfonylating agent under basic conditions to form an oxirane precursor (2) and subjecting the oxirane precursor to ring closure under basic conditions. R1 and R2 are fluoroalkyl groups, R3 and R4 are hydrogen or monovalent hydrocarbon groups, X is chlorine, bromine or —OSO2R5 group, and R5 is alkyl or aryl.
摘要翻译：通过在碱性条件下使氟化醇（1）与氯化，溴化或磺酰化剂反应以形成环氧乙烷前体（2）并使环氧乙烷前体环闭合来制备2,2-双（氟烷基）环氧乙烷（A）在基本条件下 R1和R2是氟烷基，R3和R4是氢或一价烃基，X是氯，溴或-OSO2R5基，R5是烷基或芳基。

8. 发明申请

US20120196211A1 RESIST PATTERN FORMING PROCESS 有权
标题翻译：电阻图案形成过程
公开(公告)号：US20120196211A1
公开(公告)日：2012-08-02
申请号：US13362294
申请日：2012-01-31
申请人： Keiichi Masunaga , Takeru Watanabe , Satoshi Watanabe , Daisuke Domon
发明人： Keiichi Masunaga , Takeru Watanabe , Satoshi Watanabe , Daisuke Domon
IPC分类号： G03F1/76
CPC分类号： G03F7/40 , G03F7/0045 , G03F7/0392
摘要： A resist pattern is formed by coating a chemically amplified positive resist composition onto a substrate and prebaking to form a resist film, exposing to high-energy radiation, baking and developing with a developer to form a resist pattern, and heating the pattern for profile correction to such an extent that the line width may not undergo a change of at least 10%. An amount of a softening accelerator having a molecular weight of up to 800 is added to the resist composition comprising (A) a base resin, (B) an acid generator, (C) a nitrogen-containing compound, and (D) an organic solvent.
摘要翻译：通过将化学放大的正性抗蚀剂组合物涂布在基材上并预烘烤以形成抗蚀剂膜，暴露于高能量辐射，用显影剂烘烤和显影以形成抗蚀剂图案并加热图案以进行轮廓校正来形成抗蚀剂图案达到线宽可能不会经历至少10％的变化的程度。将一定量的分子量高达800的软化促进剂加入到抗蚀剂组合物中，该抗蚀剂组合物包含（A）基础树脂，（B）酸产生剂，（C）含氮化合物和（D）有机溶剂。

9. 发明申请

US20120171868A1 RESIST UNDERLAYER FILM COMPOSITION AND PATTERNING PROCESS USING THE SAME 有权
标题翻译：使用相同的底漆膜组合物和图案处理方法
公开(公告)号：US20120171868A1
公开(公告)日：2012-07-05
申请号：US13311137
申请日：2011-12-05
申请人： Tsutomu OGIHARA , Takeru WATANABE , Yusuke BIYAJIMA , Daisuke KORI , Takeshi KINSHO , Toshihiko FUJII
发明人： Tsutomu OGIHARA , Takeru WATANABE , Yusuke BIYAJIMA , Daisuke KORI , Takeshi KINSHO , Toshihiko FUJII
IPC分类号： H01L21/311 , C09D165/02 , C08G61/02
CPC分类号： G03F7/091 , G03F7/094
摘要： There is disclosed A resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), one or more kinds of a compound represented by the following general formula (2), and one or more kinds of a compound, represented by the following general formula (3), and/or an equivalent body thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.
摘要翻译：公开了抗蚀剂下层膜组合物，其中组合物含有通过至少一种或多种下列通式（1-1）和/或（1-2）表示的化合物的缩合得到的聚合物：一种或多种由以下通式（2）表示的化合物的种类以及由以下通式（3）表示的化合物和/或其等同体的一种或多种。可以提供能够形成具有降低的反射率的下层膜（即，具有最佳n值和k值作为抗反射膜的下层膜）的三层抗蚀剂工艺的下层膜组合物，特别是在60nm以上的高方位线上，特别是在蚀刻后，不会引起线下落或翘曲，以及使用其的图案化处理。

10. 发明授权

US08168367B2 Resist composition and patterning process 有权
标题翻译：抗蚀剂组成和图案化工艺
公开(公告)号：US08168367B2
公开(公告)日：2012-05-01
申请号：US12457192
申请日：2009-06-03
申请人： Satoshi Watanabe , Akinobu Tanaka , Takeru Watanabe , Takeshi Kinsho
发明人： Satoshi Watanabe , Akinobu Tanaka , Takeru Watanabe , Takeshi Kinsho
IPC分类号： G03F7/00 , G03F7/004 , G03F7/028
CPC分类号： G03F7/0045 , G03F7/0382 , Y10S430/114 , Y10S430/128
摘要： The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.
摘要翻译：本发明涉及：抗蚀剂组合物，例如化学放大抗蚀剂组合物，除了在微制造的光刻中具有更高分辨率之外，甚至在抗蚀剂的衬底侧边界面上也提供优异的图案图形，特别是在光刻采用KrF激光，ArF激光，F2激光，超短紫外光，电子束，X射线等作为曝光源; 以及利用抗蚀剂组合物的图案化工艺。本发明提供一种化学放大抗蚀剂组合物，其包含至少具有羧基的一种或多种胺化合物或氧化胺化合物（除了具有包含在芳环的环结构中的胺或胺氧化物的氮原子的那些）并且不具有与氮原子共价键合的氢原子作为碱性中心。

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