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    • 1. 发明授权
    • Negative electrode active material, negative electrode, and power storage device
    • 负极活性物质,负极和蓄电装置
    • US08501353B2
    • 2013-08-06
    • US12890841
    • 2010-09-27
    • Tamae MoriwakaTatsuya Takahashi
    • Tamae MoriwakaTatsuya Takahashi
    • H01M4/58H01M4/13
    • H01M4/58H01M4/136H01M4/366H01M10/0525H01M10/0585Y02E60/13
    • An object is to improve characteristics of a power storage device and achieve a long lifetime. In the case where a lithium nitride is used for a negative electrode active material of a power storage device, a plurality of lithium nitride layers with different lithium concentrations are stacked. For example, in the case where a first lithium nitride layer and a second lithium nitride layer are stacked over a current collector, lithium is contained in the first lithium nitride layer at a lower concentration than lithium contained in the second lithium nitride layer. In this case, a concentration of a transition metal of the first lithium nitride layer is higher than a concentration of the transition metal of the second lithium nitride layer. Note that another alkali metal may be used instead of lithium.
    • 一个目的是改善蓄电装置的特性并达到长寿命。 在使用氮化锂作为蓄电装置的负极活性物质的情况下,堆叠具有不同锂浓度的多个氮化锂层。 例如,在集电体上层叠第一氮化锂层和第二氮化锂层的情况下,在比第二氮化锂层中所含的锂浓度低的情况下,在第一氮化锂层中含有锂。 在这种情况下,第一氮化钛层的过渡金属的浓度高于第二氮化硼层的过渡金属的浓度。 注意,可以使用另一种碱金属代替锂。
    • 2. 发明授权
    • Manufacturing method of SOI semiconductor device
    • SOI半导体器件的制造方法
    • US08343847B2
    • 2013-01-01
    • US12575555
    • 2009-10-08
    • Masaki KoyamaJunpei MomoEiji HigaHiroaki HondaTamae MoriwakaAkihisa Shimomura
    • Masaki KoyamaJunpei MomoEiji HigaHiroaki HondaTamae MoriwakaAkihisa Shimomura
    • H01L21/76
    • H01L27/1266H01L21/02381H01L21/02422H01L21/02532H01L21/02683H01L21/02686H01L21/76254H01L27/1214H01L27/1274H01L29/66772
    • To prevent, in the case of irradiating a single crystal semiconductor layer with a laser beam, an impurity element from being taken into the single crystal semiconductor layer at the time of laser irradiation. In a manufacturing method of an SOI substrate, a single crystal semiconductor substrate and a base substrate are prepared; an embrittlement region is formed in a region at a predetermined depth from a surface of the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with accelerated ions; the single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween; a single crystal semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween by heating the single crystal semiconductor substrate to cause separation using the embrittlement region as a boundary; an oxide film formed on the single crystal semiconductor layer is removed; and at least a surface of the single crystal semiconductor layer is melted by irradiating the surface of the single crystal semiconductor layer with a laser beam after the removal of the oxide film. The number of times the single crystal semiconductor layer is melted by the irradiation with the laser beam is one.
    • 为了防止在用激光束照射单晶半导体层的情况下,在激光照射时将杂质元素摄入单晶半导体层。 在SOI衬底的制造方法中,制备单晶半导体衬底和基底衬底; 通过用加速的离子照射单晶半导体衬底,在单晶半导体衬底的表面的预定深度的区域中形成脆化区域; 单晶半导体衬底和基底衬底之间具有绝缘层而彼此接合; 通过加热单晶半导体衬底以使脆化区域作为边界进行分离,在基底衬底上形成绝缘层,形成单晶半导体层; 去除形成在单晶半导体层上的氧化膜; 并且在除去氧化膜之后,通过用激光束照射单晶半导体层的表面,使单晶半导体层的至少一个表面熔融。 单晶半导体层通过激光束的照射而熔化的次数是1。
    • 6. 发明授权
    • Power storage device
    • 蓄电装置
    • US08841027B2
    • 2014-09-23
    • US13049407
    • 2011-03-16
    • Mikio YukawaTamae Moriwaka
    • Mikio YukawaTamae Moriwaka
    • H01M4/58H01M4/26C23C14/34C23C14/06
    • H01M4/5825C23C14/0036C23C14/08C23C14/3407C23C14/3492H01M4/0404H01M4/0426H01M4/136H01M4/1397H01M4/366H01M10/052H01M2004/021Y10T29/49108Y10T29/49115
    • A power storage device with favorable battery characteristics and a manufacturing method thereof are provided. The power storage device includes at least a positive electrode and a negative electrode provided so as to face the positive electrode with an electrolyte provided therebetween. The positive electrode includes a collector and a film containing an active material over the collector. The film containing the active material contains LieFefPgOh satisfying relations 3.5≦h/g≦4.5, 0.6≦g/f≦1.1, and 0≦e/f≦1.3 and LiaFebPcOd satisfying relations 3.5≦d/c≦4.5, 0.6≦c/b≦1.8, and 0.7≦a/b≦2.8. The film containing the active material contains the LiaFebPcOd satisfying the relations 3.5≦d/c≦4.5, 0.6≦c/b≦1.8, and 0.7≦a/b≦2.8 in a region which is in contact with the electrolyte.
    • 提供了具有良好的电池特性的蓄电装置及其制造方法。 蓄电装置至少包括正电极和负电极,所述正电极和负电极设置成面对正电极,其间设置有电解质。 正极包括集电体和在集电体上含有活性材料的膜。 含有活性物质的膜含有满足3.5≦̸ h / g≦̸ 4.5,0.6≦̸ g / f≦̸ 1.1和0≦̸ e / f≦̸ 1.3和LiaFebPcOd的关系的LieFefPgOh满足关系3.5≦̸ d / c≦̸ 4.5,0.6 ≦̸ c / b≦̸ 1.8和0.7≦̸ a / b≦̸ 2.8。 含有活性物质的膜含有与电解质接触的区域中满足3.5≦̸ d / c≦̸ 4.5,0.6≦̸ c / b≦̸ 1.8和0.7≦̸ a / b≦̸ 2.8的关系的LiaFebPcOd。