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1. 发明申请

US20060180198A1 Solar cell, solar cell string and method of manufacturing solar cell string 审中-公开
标题翻译：太阳能电池，太阳能电池串和制造太阳能电池串的方法
公开(公告)号：US20060180198A1
公开(公告)日：2006-08-17
申请号：US11351253
申请日：2006-02-10
申请人： Tatsuya Takamoto , Takaaki Agui , Hidetoshi Washio , Naoki Takahashi
发明人： Tatsuya Takamoto , Takaaki Agui , Hidetoshi Washio , Naoki Takahashi
IPC分类号： H01L31/00
CPC分类号： H01L31/0687 , H01L31/02008 , H01L31/0504 , Y02E10/544 , Y02P70/521
摘要： A solar cell includes a first compound semiconductor stacked body with an n-type compound semiconductor layer and a p-type compound semiconductor layer in contact with each other, the first compound semiconductor stacked body has a first electrode of a first polarity and a second electrode of a second polarity, and surfaces of the first electrode and the second electrode are exposed to the same side. A solar cell string using the solar cells and a method of manufacturing the solar cell string are further provided.
摘要翻译：太阳能电池包括具有相互接触的n型化合物半导体层和p型化合物半导体层的第一化合物半导体层叠体，第一化合物半导体层叠体具有第一极性的第一电极和第二电极第二极性的第一电极和第二电极的表面暴露于同一侧。还提供了使用太阳能电池的太阳能电池串和制造太阳能电池串的方法。

2. 发明申请

US20060054900A1 Compound semiconductor device epitaxial growth substrate, semiconductor device, and manufacturing method thereof 审中-公开
公开(公告)号：US20060054900A1
公开(公告)日：2006-03-16
申请号：US11220908
申请日：2005-09-08
申请人： Tatsuya Takamoto , Takaaki Agui
发明人： Tatsuya Takamoto , Takaaki Agui
IPC分类号： H01L33/00
CPC分类号： C30B25/18 , H01L21/0237 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02502 , H01L21/02543 , H01L21/02546 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A compound semiconductor device epitaxial growth substrate, wherein a semiconductor substrate, a substrate protective layer made of a material that is different from the material of the substrate, a middle layer for making separation of the semiconductor substrate and a compound semiconductor device layer possible, and a compound semiconductor device layer that is formed through epitaxial growth are layered in this order; and a semiconductor device which uses the compound semiconductor device layer that is gained by separating the semiconductor substrate, the substrate protective layer and the middle layer from this compound semiconductor device epitaxial growth substrate; as well as manufacturing methods for these.

3. 发明申请

US20100279456A1 Compound solar and manufacturing method thereof 审中-公开
标题翻译：复合太阳能及其制造方法
公开(公告)号：US20100279456A1
公开(公告)日：2010-11-04
申请号：US12232294
申请日：2008-09-15
申请人： Tatsuya Takamoto , Takaaki Agui
发明人： Tatsuya Takamoto , Takaaki Agui
IPC分类号： H01L31/0248
CPC分类号： H01L31/1892 , H01L31/03046 , H01L31/0687 , H01L31/078 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： On a surface of a GaAs substrate, layers to be a top cell are formed by epitaxial growth. On the top cell, layers to be a bottom cell are formed. Thereafter, on a surface of the bottom cell, a back surface electrode is formed. Thereafter, a glass plate is adhered to the back surface electrode by wax. Then, the GaAs substrate supported by the glass plate is dipped in an alkali solution, whereby the GaAs substrate is removed. Thereafter, a surface electrode is formed on the top cell. Finally the glass plate is separated from the back surface electrode. In this manner, a compound solar battery that improves efficiency of conversion to electric energy can be obtained.
摘要翻译：在GaAs衬底的表面上，通过外延生长形成作为顶部电池的层。在顶部单元上，形成作为底部单元的层。此后，在底部电池的表面上形成背面电极。此后，通过蜡将玻璃板粘附到背面电极。然后，将由玻璃板支撑的GaAs衬底浸入碱溶液中，从而去除GaAs衬底。此后，在顶部电池上形成表面电极。最后，玻璃板与背面电极分离。以这种方式，可以获得提高转换成电能的效率的复合太阳能电池。

4. 发明申请

US20080070388A1 Compound semiconductor device epitaxial growth substrate, semiconductor device, and manufacturing method thereof 有权
标题翻译：复合半导体器件外延生长衬底，半导体器件及其制造方法
公开(公告)号：US20080070388A1
公开(公告)日：2008-03-20
申请号：US11976863
申请日：2007-10-29
申请人： Tatsuya Takamoto , Takaaki Agui
发明人： Tatsuya Takamoto , Takaaki Agui
IPC分类号： H01L21/20
CPC分类号： C30B25/18 , H01L21/0237 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02502 , H01L21/02543 , H01L21/02546 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A compound semiconductor device epitaxial growth substrate, wherein a semiconductor substrate, a substrate protective layer made of a material that is different from the material of the substrate, a middle layer for making separation of the semiconductor substrate and a compound semiconductor device layer possible, and a compound semiconductor device layer that is formed through epitaxial growth are layered in this order; and a semiconductor device which uses the compound semiconductor device layer that is gained by separating the semiconductor substrate, the substrate protective layer and the middle layer from this compound semiconductor device epitaxial growth substrate; as well as manufacturing methods for these.
摘要翻译：一种化合物半导体器件外延生长衬底，其中半导体衬底，由与衬底的材料不同的材料制成的衬底保护层，可能使半导体衬底分离的中间层和可能的化合物半导体器件层，以及通过外延生长形成的化合物半导体器件层依次层叠; 以及使用通过从该化合物半导体器件外延生长衬底分离半导体衬底，衬底保护层和中间层而获得的化合物半导体器件层的半导体器件; 以及这些的制造方法。

5. 发明授权

US06300558B1 Lattice matched solar cell and method for manufacturing the same 有权
标题翻译：晶格匹配的太阳能电池及其制造方法
公开(公告)号：US06300558B1
公开(公告)日：2001-10-09
申请号：US09553495
申请日：2000-04-20
申请人： Tatsuya Takamoto , Hiroshi Kurita , Takaaki Agui , Eiji Ikeda
发明人： Tatsuya Takamoto , Hiroshi Kurita , Takaaki Agui , Eiji Ikeda
IPC分类号： H01L31068
CPC分类号： H01L31/0735 , Y02E10/544 , Y02P70/521
摘要： A solar cell comprises at least a germanium (Ge) substrate, buffer layers formed on the germanium substrate, a first InxGa1-xAs layer of first conductivity type formed on the buffer layers, and a second InxGa1-xAs layer of second conductivity type formed on the first InxGa1-xAs layer to form pn junction. Because the composition x of In contained in the first InxGa1-xAs layer and the second InxGa1-xAs layer is in a range of 0.005≦x≦0.015, the inexpensive and high conversion efficiency solar cell can be achieved.
摘要翻译：太阳能电池至少包括锗（Ge）衬底，形成在锗衬底上的缓冲层，形成在缓冲层上的第一导电类型的第一In x Ga 1-x As层和形成在第二导电类型上的第二导电类型的第二In x Ga 1-x As层第一个In x Ga 1-x As层形成pn结。因为包含在第一In x Ga 1-x As层和第二In x Ga 1-x As层中的In的组成x在0.005 <= x <= 0.015的范围内，所以可以实现廉价且高转换效率的太阳能电池。

6. 发明申请

US20110290312A1 COMPOUND SEMICONDUCTOR SOLAR BATTERY AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR SOLAR BATTERY 审中-公开
标题翻译：化合物半导体太阳能电池及制造化合物半导体太阳能电池的方法
公开(公告)号：US20110290312A1
公开(公告)日：2011-12-01
申请号：US13148270
申请日：2010-02-02
申请人： Takaaki Agui , Tatsuya Takamoto
发明人： Takaaki Agui , Tatsuya Takamoto
IPC分类号： H01L31/06 , H01L31/18
CPC分类号： H01L31/0725 , H01L31/06875 , H01L31/0693 , H01L31/0735 , H01L31/1844 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： A compound semiconductor solar battery including a first compound semiconductor photoelectric conversion cell, a second compound semiconductor photoelectric conversion cell provided on the first compound semiconductor photoelectric conversion cell, and a compound semiconductor buffer layer provided between the first compound semiconductor photoelectric conversion cell and the second compound semiconductor photoelectric conversion cell, the first compound semiconductor photoelectric conversion cell and the compound semiconductor buffer layer being provided adjacent to each other, and a ratio of a difference in lattice constant between the first compound semiconductor photoelectric conversion cell and a compound semiconductor layer provided in a position closest to the first compound semiconductor photoelectric conversion cell among compound semiconductor layers constituting the compound semiconductor buffer layer being not less than 0.15% and not more than 0.74%, and a method for manufacturing the same are provided.
摘要翻译：一种复合半导体太阳能电池，包括第一化合物半导体光电转换单元，设置在第一化合物半导体光电转换单元上的第二化合物半导体光电转换单元和设置在第一化合物半导体光电转换单元与第二化合物之间的化合物半导体缓冲层半导体光电转换单元，第一化合物半导体光电转换单元和化合物半导体缓冲层彼此相邻地设置，并且第一化合物半导体光电转换单元和设置在第一化合物半导体光电转换单元中的化合物半导体层之间的晶格常数差构成化合物半导体缓冲层的化合物半导体层中最靠近第一化合物半导体光电转换元件的位置为0.15％以上且0.74％以下的制造方法，以及制造方法提供了相同的操作。

7. 发明申请

US20100326518A1 SOLAR CELL AND METHOD OF MANUFACTURING SOLAR CELL 有权
标题翻译：太阳能电池和制造太阳能电池的方法
公开(公告)号：US20100326518A1
公开(公告)日：2010-12-30
申请号：US12918621
申请日：2009-02-16
申请人： Hiroyuki Juso , Tatsuya Takamoto
发明人： Hiroyuki Juso , Tatsuya Takamoto
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/0687 , H01L31/022425 , Y02E10/544 , Y02P70/521
摘要： A solar cell includes a rear surface electrode layer a semiconductor layer formed on a surface of rear surface electrode layer a front surface electrode layer formed on a surface of semiconductor layer and a support layer on a surface of rear surface electrode layer at a side opposite the side where semiconductor layer is formed. Semiconductor layer includes at least one p-n junction. A plurality of through holes are provided, which through holes are cavities connecting support layer openings provided on a surface of support layer at a side opposite the side where rear surface electrode layer is formed with semiconductor layer openings provided on a surface of semiconductor layer at a side opposite the side where rear surface electrode layer is formed. Front surface electrode layer is formed in a region where semiconductor layer openings are not provided. A method of manufacturing the solar cell is also disclosed.
摘要翻译：太阳能电池包括后表面电极层，形成在背面电极层的表面上的半导体层，形成在半导体层的表面上的前表面电极层和与背面电极层相对的一侧的背面电极层的表面上的支撑层一侧形成半导体层。半导体层包括至少一个p-n结。提供多个通孔，该通孔是连接支撑层开口的空腔，支撑层开口设置在支撑层的与形成有背面电极层的一侧相反一侧的表面上，半导体层开口设置在半导体层的表面上在与形成背面电极层的一侧相反的一侧。前面电极层形成在不设置半导体层开口的区域中。还公开了一种制造太阳能电池的方法。

8. 发明申请

US20090283127A1 Method of Manufacturing Photoelectric Conversion Element and the Photoeletric Conversion Element 审中-公开
标题翻译：制造光电转换元件和光电转换元件的方法
公开(公告)号：US20090283127A1
公开(公告)日：2009-11-19
申请号：US11989518
申请日：2006-07-12
申请人： Hiroyuki Juso , Atsushi Yoshida , Kazuyo Nakamura , Hidetoshi Washio , Naoki Takahashi , Tatsuya Takamoto
发明人： Hiroyuki Juso , Atsushi Yoshida , Kazuyo Nakamura , Hidetoshi Washio , Naoki Takahashi , Tatsuya Takamoto
IPC分类号： H01L31/042 , H01L21/30
CPC分类号： H01L31/18 , H01L31/0693 , H01L31/184 , Y02E10/544 , Y02P70/521
摘要： Disclosed is a method of manufacturing a photoelectric conversion element including a substrate and a stacked body configured of a plurality of compound semiconductor layers of different compositions sequentially stacked on the substrate, and having at least one pn junction in the stacked body. This method includes the steps of forming the stacked body configured of the plurality of compound semiconductor layers of different compositions sequentially stacked on the substrate; forming a protective film on the stacked body; forming a groove by removing at least a portion of the stacked body by at least one method selected from the group consisting of a mechanical removing method, dry etching and laser scribing; etching a side wall of the groove using an etching solution after forming the protective film and the groove; and cutting a portion corresponding to the groove for separation into a plurality of photoelectric conversion elements. Also disclosed is a photoelectric conversion element obtained by this method.
摘要翻译：公开了一种制造光电转换元件的方法，该光电转换元件包括基板和层叠体，该多个化合物半导体层由不同组成的化合物半导体层构成，顺序层叠在基板上，并且在堆叠体中具有至少一个pn结。该方法包括以下步骤：由顺序层叠在基板上的由不同组成的多个化合物半导体层构成的层叠体; 在堆叠体上形成保护膜; 通过从由机械去除方法，干蚀刻和激光划线组成的组中选择的至少一种方法去除层叠体的至少一部分来形成凹槽; 在形成保护膜和凹槽之后，使用蚀刻溶液蚀刻凹槽的侧壁; 以及将与所述槽对应的部分切割成多个光电转换元件。还公开了通过该方法获得的光电转换元件。

9. 发明申请

US20090277502A1 SOLAR CELL, SOLAR CELL MODULE USING THE SOLAR CELL AND METHOD FOR MANUFACTURING THE SOLAR CELL MODULE 审中-公开
标题翻译：太阳能电池，使用太阳能电池的太阳能电池模块及制造太阳能电池模块的方法
公开(公告)号：US20090277502A1
公开(公告)日：2009-11-12
申请号：US12297137
申请日：2007-04-04
申请人： Atsushi Yoshida , Hiroyuki Juso , Tatsuya Takamoto
发明人： Atsushi Yoshida , Hiroyuki Juso , Tatsuya Takamoto
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/02168 , H01L2224/73265 , Y02E10/50
摘要： In a solar cell, a body portion that includes at least one PN junction portion that is formed by laminating a P layer and an N layer in the front to back direction is formed. End faces of the PN junction portion form part of side faces of the body portion, and a surface electrode is formed on a surface of the body portion and a back surface electrode is formed on a back surface of the body portion. The surface electrode includes a terminal attachment portion to which a surface electrode connecting lead wire through which an electromotive force is extracted is bonded by wire-bonding or spot-welding. An anti-reflection film is formed on a surface of the surface electrode that includes the terminal attachment portion and the surface of the body portion other than a portion where the surface electrode is formed.
摘要翻译：在太阳能电池中，形成包括通过在前后方向层叠P层和N层形成的至少一个PN结部的主体部。 PN结部分的端面形成主体部分的侧面的一部分，并且在主体部分的表面上形成表面电极，并且在主体部分的后表面上形成背面电极。表面电极包括端子安装部分，通过引线接合或点焊来将引出电动势的引线的连接引线的表面电极连接到该端子附接部分。在包括端子安装部分的表面电极的表面和除了形成表面电极的部分之外的主体部分的表面上形成防反射膜。

10. 发明申请

US20050110109A1 Semiconductor device manufacturing method and semiconductor device manufactured by such manufacturing method 审中-公开
标题翻译：半导体器件制造方法和通过这种制造方法制造的半导体器件
公开(公告)号：US20050110109A1
公开(公告)日：2005-05-26
申请号：US10988698
申请日：2004-11-16
申请人： Hidetoshi Washio , Tatsuya Takamoto
发明人： Hidetoshi Washio , Tatsuya Takamoto
IPC分类号： H01L21/28 , H01L21/285 , H01L21/308 , H01L21/3205 , H01L21/60 , H01L21/768 , H01L23/58 , H01L29/41
CPC分类号： H01L21/76897 , H01L21/76838
摘要： After patterning employing photolithographic and/or other such technique(s) following resist film formation, small amount(s) of surface(s) at exposed portion(s) of crystal(s) 1 is or are at least partially removed therefrom by etching as a result of immersion in etchant(s). Metal film(s) is/are thereafter formed over surface(s) of exposed crystal(s) 1 and over photoresist remaining following etching operation(s), and photoresist remaining following etching operation(s) is then removed so as to cause metal film(s) to remain only at surface(s) of crystal(s) 1 exposed at patterning operation(s).
摘要翻译：在抗蚀剂膜形成之后利用光刻和/或其它这样的技术进行图案化之后，在一些或多个晶体1的暴露部分处的少量表面通过蚀刻或至少部分地从其中去除作为浸入蚀刻剂的结果。然后在暴露的晶体1的表面上形成金属膜，并且在蚀刻操作之后残留的光致抗蚀剂上，然后除去蚀刻操作后的光致抗蚀剂，从而引起金属膜仅保留在图案化操作下暴露的晶体1的表面。

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