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    • 1. 发明授权
    • Solid-state imaging device and method for manufacturing solid-state imaging device, and electronic device
    • 固态成像装置及其制造方法,固态成像装置及电子装置
    • US08624305B2
    • 2014-01-07
    • US12938790
    • 2010-11-03
    • Hiroyuki OkitaToshitaka Kawashima
    • Hiroyuki OkitaToshitaka Kawashima
    • H01L31/00
    • H01L27/14632H01L27/14687H01L27/307
    • A solid-state imaging device includes a photoelectric conversion portion that is provided above an imaging surface of a substrate, and a plurality of readout circuit portions that are provided below the photoelectric conversion portion on the imaging surface. The photoelectric conversion portion includes a photoelectric conversion film that receives incident light and produces a signal charge, and a first electrode and a second electrode that sandwich the photoelectric conversion film, and the first electrode, the photoelectric conversion film, and the second electrode are sequentially layered upward on the imaging surface. Further, each of the readout circuit portions includes a readout circuit that is electrically connected with the first electrode and reads out the signal charge produced by the photoelectric conversion portion, and a ground electrode that is grounded, and the ground electrode is interposed between the readout circuit and the first electrode on the imaging surface.
    • 固态成像装置包括设置在基板的成像面上方的光电转换部,以及设置在摄像面的光电转换部的下方的多个读出电路部。 光电转换部分包括接收入射光并产生信号电荷的光电转换膜,并且夹着光电转换膜的第一电极和第二电极以及第一电极,光电转换膜和第二电极依次 在成像面上向上分层。 此外,每个读出电路部分都包括读出电路,该读出电路与第一电极电连接并读出由光电转换部分产生的信号电荷,以及接地电极,接地电极介于读出 电路和成像表面上的第一电极。
    • 5. 发明授权
    • Method of manufacturing thin film transistor, thin film transistor, and display unit
    • 制造薄膜晶体管,薄膜晶体管和显示单元的方法
    • US08163592B2
    • 2012-04-24
    • US12635099
    • 2009-12-10
    • Shina KiritaToshitaka Kawashima
    • Shina KiritaToshitaka Kawashima
    • H01L29/786
    • H01L29/7869H01L21/02422H01L21/02554H01L21/02565H01L21/02631
    • A method of manufacturing a thin film transistor capable of simplifying the steps is provided. The method of manufacturing a thin film transistor includes the steps of: forming a gate electrode and a gate insulating film sequentially on a substrate; forming an oxide semiconductor film in a shape including a planned channel formation region, a planned source electrode formation region, and a planned drain electrode formation region on the gate insulating film so that the whole oxide semiconductor film has the same carrier density as a carrier density of the planned channel formation region; forming a mask inhibiting heat transmission on the planned channel formation region; and heating the oxide semiconductor film in the air and thereby obtaining a higher carrier density of a region of the oxide semiconductor film not covered with the mask than the carrier density of the planned channel formation region.
    • 提供了一种制造能够简化步骤的薄膜晶体管的方法。 制造薄膜晶体管的方法包括以下步骤:在衬底上依次形成栅电极和栅绝缘膜; 在栅极绝缘膜上形成具有规划沟道形成区域,规划源极形成区域和规划的漏电极形成区域的形状的氧化物半导体膜,使得整个氧化物半导体膜具有与载流子密度相同的载流子密度 的计划渠道形成区域; 形成抑制所述规划通道形成区域的热传递的掩模; 并在空气中加热氧化物半导体膜,从而获得比掩模的氧化物半导体膜的区域的载流子密度高于规划的沟道形成区的载流子密度。
    • 6. 发明授权
    • Electro-wetting device and a method of manufacturing the same
    • 电润湿装置及其制造方法
    • US08081389B2
    • 2011-12-20
    • US12526912
    • 2008-02-04
    • Shina KiritaToshitaka Kawashima
    • Shina KiritaToshitaka Kawashima
    • G02B1/06
    • G02B26/005G02B3/14
    • An electro-wetting device is provided that can prevent deterioration of withstand voltage characteristics due to use of a high-dielectric constant film, thereby ensuring an insulating structure having high reliability. The electro-wetting device includes a conductive first liquid, an insulating second liquid, a transparent substrate and a cover body defining a liquid room for accommodating therein the first and second liquids, an electrode layer formed on a surface, on the liquid room side, of the transparent substrate, and an insulating layer formed on a surface of the electrode layer. The insulating layer has a lamination structure of a first insulating film made of an insulating inorganic crystalline material, and a second insulating film made of an insulating inorganic amorphous material, which results in that surface irregularities of the first insulating film is relaxed by the second insulating film, and thus the low voltage drive is possible. As a result, it is possible to obtain the highly reliable insulating layer which is excellent in the withstand voltage strength.
    • 提供一种电润湿装置,其可以防止由于使用高介电常数膜导致的耐电压特性的劣化,从而确保具有高可靠性的绝缘结构。 电润湿装置包括导电的第一液体,绝缘的第二液体,透明基材和限定用于容纳第一和第二液体的液体室的盖体,在液体室侧的表面上形成的电极层, 的透明基板,以及形成在电极层的表面上的绝缘层。 绝缘层具有由绝缘无机结晶材料制成的第一绝缘膜和由绝缘无机非晶材料制成的第二绝缘膜的层压结构,导致第一绝缘膜的表面不规则性被第二绝缘体 因此可以进行低电压驱动。 结果,可以获得耐压强度优异的高可靠性绝缘层。
    • 7. 发明申请
    • METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY UNIT
    • 制造薄膜晶体管,薄膜晶体管和显示单元的方法
    • US20100155718A1
    • 2010-06-24
    • US12635099
    • 2009-12-10
    • Shina KiritaToshitaka Kawashima
    • Shina KiritaToshitaka Kawashima
    • H01L29/786H01L21/36
    • H01L29/7869H01L21/02422H01L21/02554H01L21/02565H01L21/02631
    • A method of manufacturing a thin film transistor capable of simplifying the steps is provided. The method of manufacturing a thin film transistor includes the steps of: forming a gate electrode and a gate insulating film sequentially on a substrate; forming an oxide semiconductor film in a shape including a planned channel formation region, a planned source electrode formation region, and a planned drain electrode formation region on the gate insulating film so that the whole oxide semiconductor film has the same carrier density as a carrier density of the planned channel formation region; forming a mask inhibiting heat transmission on the planned channel formation region; and heating the oxide semiconductor film in the air and thereby obtaining a higher carrier density of a region of the oxide semiconductor film not covered with the mask than the carrier density of the planned channel formation region.
    • 提供了一种制造能够简化步骤的薄膜晶体管的方法。 制造薄膜晶体管的方法包括以下步骤:在衬底上依次形成栅电极和栅绝缘膜; 在栅极绝缘膜上形成具有规划沟道形成区域,规划源极形成区域和规划的漏电极形成区域的形状的氧化物半导体膜,使得整个氧化物半导体膜具有与载流子密度相同的载流子密度 的计划渠道形成区域; 形成抑制所述规划通道形成区域的热传递的掩模; 并在空气中加热氧化物半导体膜,从而获得比掩模的氧化物半导体膜的区域的载流子密度高于规划的沟道形成区的载流子密度。
    • 8. 发明申请
    • ELECTRO-WETTING DEVICE AND A METHOD OF MANUFACTURING THE SAME
    • 电润湿装置及其制造方法
    • US20100046084A1
    • 2010-02-25
    • US12526912
    • 2008-02-04
    • Shina KiritaToshitaka Kawashima
    • Shina KiritaToshitaka Kawashima
    • G02B1/06B05D5/12C23C14/34G02B3/14G02B26/08
    • G02B26/005G02B3/14
    • An electro-wetting device is provided that can prevent deterioration of withstand voltage characteristics due to use of a high-dielectric constant film, thereby ensuring an insulating structure having high reliability. The electro-wetting device includes a conductive first liquid, an insulating second liquid, a transparent substrate and a cover body defining a liquid room for accommodating therein the first and second liquids, an electrode layer formed on a surface, on the liquid room side, of the transparent substrate, and an insulating layer formed on a surface of the electrode layer. The insulating layer has a lamination structure of a first insulating film made of an insulating inorganic crystalline material, and a second insulating film made of an insulating inorganic amorphous material, which results in that surface irregularities of the first insulating film is relaxed by the second insulating film, and thus the low voltage drive is possible. As a result, it is possible to obtain the highly reliable insulating layer which is excellent in the withstand voltage strength.
    • 提供一种电润湿装置,其可以防止由于使用高介电常数膜导致的耐电压特性的劣化,从而确保具有高可靠性的绝缘结构。 电润湿装置包括导电的第一液体,绝缘的第二液体,透明基材和限定用于容纳第一和第二液体的液体室的盖体,在液体室侧的表面上形成的电极层, 的透明基板,以及形成在电极层的表面上的绝缘层。 绝缘层具有由绝缘无机结晶材料制成的第一绝缘膜和由绝缘无机非晶材料制成的第二绝缘膜的层压结构,导致第一绝缘膜的表面不规则性被第二绝缘体 因此可以进行低电压驱动。 结果,可以获得耐压强度优异的高可靠性绝缘层。