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1. 发明授权

US08305538B2 Low-cost large-screen wide-angle fast-response liquid crystal display apparatus 有权
公开(公告)号：US08305538B2
公开(公告)日：2012-11-06
申请号：US13239500
申请日：2011-09-22
申请人： Sakae Tanaka , Toshiyuki Samejima
发明人： Sakae Tanaka , Toshiyuki Samejima
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F1/133707 , G02F2001/134372 , G02F2001/136231 , G02F2001/136236 , G02F2001/13712 , G09G3/3648 , G09G2310/0218 , G09G2310/0283
摘要： A super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times. The invention adopts a halftone exposure technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an orientation control electrode. A passivation layer uses a masking deposition method. A film is formed by using a P-CVD method, or a protective area is formed at a local area by using an ink coating method or spray method, and a TFT array substrate used for the super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times can be produced.

2. 发明申请

US20120038875A1 LOW-COST LARGE-SCREEN WIDE-ANGLE FAST-RESPONSE LIQUID CRYSTAL DISPLAY APPARATUS 有权
标题翻译：低成本大屏幕宽角度快速响应液晶显示设备
公开(公告)号：US20120038875A1
公开(公告)日：2012-02-16
申请号：US13239500
申请日：2011-09-22
申请人： Sakae Tanaka , Toshiyuki Samejima
发明人： Sakae Tanaka , Toshiyuki Samejima
IPC分类号： G02F1/1333
CPC分类号： G02F1/134363 , G02F1/133707 , G02F2001/134372 , G02F2001/136231 , G02F2001/136236 , G02F2001/13712 , G09G3/3648 , G09G2310/0218 , G09G2310/0283
摘要： A super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times. The invention adopts a halftone exposure technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an orientation control electrode. A passivation layer uses a masking deposition method. A film is formed by using a P-CVD method, or a protective area is formed at a local area by using an ink coating method or spray method, and a TFT array substrate used for the super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times can be produced.
摘要翻译：一种超大型广角高速响应液晶显示装置，通过使用光刻步骤三次制造。本发明采用半色调曝光技术形成栅电极，公共电极，像素电极和接触焊盘，然后使用半色调曝光技术形成硅（Si）岛和接触孔，以及一般曝光技术以形成源电极，漏电极和取向控制电极。钝化层使用掩模沉积方法。通过使用P-CVD法形成膜，或者通过使用油墨涂布法或喷雾法在局部区域形成保护区域，以及用于超大型广角高速响应液体的TFT阵列基板可以制造通过使用光刻工艺制造三次的晶体显示装置。

3. 发明授权

US07573271B2 Apparatus for measuring electric characteristics of semiconductor 失效
标题翻译：用于测量半导体电气特性的装置
公开(公告)号：US07573271B2
公开(公告)日：2009-08-11
申请号：US11661219
申请日：2005-08-25
申请人： Toshiyuki Samejima , Hajime Watakabe
发明人： Toshiyuki Samejima , Hajime Watakabe
IPC分类号： G01R31/00 , G01R31/302
CPC分类号： G01R31/2648 , H02S50/10
摘要： An apparatus for measuring electric characteristics of a semiconductor includes a light irradiating means for irradiating light to a characteristic measured semiconductor, an alternating-current voltage source, an electric potential measuring means and an impedance regulator wherein impedance is regulated by an impedance regulator in such a manner that electric potential at an electric potential measuring point of the characteristic measured semiconductor may become zero electric potential in the state in which light is not irradiated on the characteristic measured semiconductor by the light irradiating means. Electric characteristics of the characteristic measured semiconductor are measured based on measurement of electric potential obtained with or without irradiation of light onto the characteristic measured semiconductor. With this arrangement, semiconductor electric characteristics can be measured with high accuracy by a simple arrangement.
摘要翻译：用于测量半导体的电特性的装置包括用于将光照射到特性测量半导体的光照射装置，交流电压源，电位测量装置和阻抗调节器，其中阻抗由这样的阻抗调节器调节在光照射装置不对特征测量半导体照射光的状态下，特性测量半导体的电位测量点的电位可能变为零电位。基于特性测量半导体的光照射光电位的测定，测定特性测量半导体的电特性。利用这种布置，可以通过简单的布置以高精度测量半导体电特性。

4. 发明申请

US20100066930A1 LOW-COST LARGE-SCREEN WIDE-ANGLE FAST-RESPONSE LIQUID CRYSTAL DISPLAY APPARATUS 审中-公开
公开(公告)号：US20100066930A1
公开(公告)日：2010-03-18
申请号：US12558065
申请日：2009-09-11
申请人： Sakae Tanaka , Toshiyuki Samejima
发明人： Sakae Tanaka , Toshiyuki Samejima
IPC分类号： G09G3/36 , H01L21/77
CPC分类号： G02F1/134363 , G02F1/133707 , G02F2001/134372 , G02F2001/136231 , G02F2001/136236 , G02F2001/13712 , G09G3/3648 , G09G2310/0218 , G09G2310/0283
摘要： The present invention discloses a super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times. The invention adopts a halftone exposure technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an orientation control electrode. A passivation layer uses a masking deposition method. A film is formed by using a P-CVD method, or a protective area is formed at a local area by using an ink coating method or spray method, and a TFT array substrate used for the super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times can be produced.

5. 发明授权

US07602456B2 Method of manufacturing LCD apparatus by using halftone exposure method 有权
标题翻译：使用半色调曝光方法制造LCD设备的方法
公开(公告)号：US07602456B2
公开(公告)日：2009-10-13
申请号：US11749190
申请日：2007-05-16
申请人： Sakae Tanaka , Toshiyuki Samejima
发明人： Sakae Tanaka , Toshiyuki Samejima
IPC分类号： G02F1/136
CPC分类号： G02F1/13458 , G02F2001/136236 , H01L27/124 , H01L27/1288
摘要： The present invention discloses a method of manufacturing a super large wide-angle super high-speed response LCD apparatus by using a photolithographic process for three times. The invention adopts a halftone exposure technology and a nitrogen ion doped technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an alignment control electrode. A P-CVD apparatus is provided for forming a passivation layer into a film by using a masking deposition method, or an ink-jet coating method is used to coat a protective layer at a partial area, and a photolithographic process is performed for three times to manufacture a TFT matrix substrate of the super large wide-angle super high-speed response LCD.
摘要翻译：本发明公开了通过使用光刻工艺三次制造超大型广角超高速响应LCD装置的方法。本发明采用半色调曝光技术和氮离子掺杂技术形成栅电极，公共电极，像素电极和接触焊盘，然后使用半色调曝光技术形成硅（Si）岛和接触孔以及形成源电极，漏电极和取向控制电极的一般曝光技术。提供了一种P-CVD装置，用于通过使用掩模沉积方法将钝化层形成为膜，或者使用喷墨涂覆法在部分区域上涂覆保护层，并且进行光刻处理三次制造超大型广角超高速液晶显示器的TFT矩阵基板。

6. 发明申请

US20070291209A1 LOW-COST LARGE-SCREEN WIDE-ANGLE FAST-RESPONSE LIQUID CRYSTAL DISPLAY APPARATUS 审中-公开
标题翻译：低成本大屏幕宽角度快速响应液晶显示设备
公开(公告)号：US20070291209A1
公开(公告)日：2007-12-20
申请号：US11743749
申请日：2007-05-03
申请人： Sakae Tanaka , Toshiyuki Samejima
发明人： Sakae Tanaka , Toshiyuki Samejima
IPC分类号： G02F1/1337
CPC分类号： G02F1/134363 , G02F1/133707 , G02F2001/134372 , G02F2001/136231 , G02F2001/136236 , G02F2001/13712 , G09G3/3648 , G09G2310/0218 , G09G2310/0283
摘要： The present invention discloses a super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times. The invention adopts a halftone exposure technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an orientation control electrode. A passivation layer uses a masking deposition method. A film is formed by using a P—CVD method, or a protective area is formed at a local area by using an ink coating method or spray method, and a TFT array substrate used for the super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times can be produced.
摘要翻译：本发明公开了使用光刻法制造三次的超大型广角高速液晶显示装置。本发明采用半色调曝光技术形成栅电极，公共电极，像素电极和接触焊盘，然后使用半色调曝光技术形成硅（Si）岛和接触孔，以及一般曝光技术以形成源电极，漏电极和取向控制电极。钝化层使用掩模沉积方法。通过使用P-CVD法形成膜，或者通过使用油墨涂布法或喷雾法在局部区域形成保护区域，以及用于超大型广角高速响应液体的TFT阵列基板可以制造通过使用光刻工艺制造三次的晶体显示装置。

7. 发明授权

US08094274B2 Low-cost large-screen wide-angle fast-response liquid crystal display apparatus 有权
标题翻译：低成本大屏幕广角快速响应液晶显示装置
公开(公告)号：US08094274B2
公开(公告)日：2012-01-10
申请号：US12558050
申请日：2009-09-11
申请人： Sakae Tanaka , Toshiyuki Samejima
发明人： Sakae Tanaka , Toshiyuki Samejima
IPC分类号： G02F1/1337 , G02F1/1333
CPC分类号： G02F1/134363 , G02F1/133707 , G02F2001/134372 , G02F2001/136231 , G02F2001/136236 , G02F2001/13712 , G09G3/3648 , G09G2310/0218 , G09G2310/0283
摘要： A super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times. The invention adopts a halftone exposure technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an orientation control electrode. A passivation layer uses a masking deposition method. A film is formed by using a P-CVD method, or a protective area is formed at a local area by using an ink coating method or spray method, and a TFT array substrate used for the super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times can be produced.
摘要翻译：一种超大型广角高速响应液晶显示装置，通过使用光刻步骤三次制造。本发明采用半色调曝光技术形成栅电极，公共电极，像素电极和接触焊盘，然后使用半色调曝光技术形成硅（Si）岛和接触孔，以及一般曝光技术以形成源电极，漏电极和取向控制电极。钝化层使用掩模沉积方法。通过使用P-CVD法形成膜，或者通过使用油墨涂布法或喷雾法在局部区域形成保护区域，以及用于超大型广角高速响应液体的TFT阵列基板可以制造通过使用光刻工艺制造三次的晶体显示装置。

8. 发明申请

US20100309420A1 LOW-COST LARGE-SCREEN WIDE-ANGLE FAST-RESPONSE LIQUID CRYSTAL DISPLAY APPARATUS 审中-公开
标题翻译：低成本大屏幕宽角度快速响应液晶显示设备
公开(公告)号：US20100309420A1
公开(公告)日：2010-12-09
申请号：US12859319
申请日：2010-08-19
申请人： Sakae Tanaka , Toshiyuki Samejima
发明人： Sakae Tanaka , Toshiyuki Samejima
IPC分类号： G02F1/1343
CPC分类号： H01L27/1288 , G02F1/133707 , G02F1/134363 , G02F2001/134372 , G02F2001/136231 , G02F2001/136236 , G02F2001/13712 , G09G3/3648 , G09G2310/0205 , G09G2310/0218 , G09G2310/0283 , G09G2310/06 , H01L27/1214
摘要： An active matrix vertical alignment liquid crystal display apparatus comprises a transparent pixel electrode formed on a transparent substrate of TFT, and another transparent pixel electrode is connected to a drain electrode of the transparent substrate of TFT. A transparent insulating film is provided on the transparent pixel electrodes; and a plurality of slender slits are provided and have liquid crystal alignment power in the transparent pixel electrode, wherein the liquid crystal alignment control electrodes which are slender formed on the transparent insulating layer, and the liquid crystal alignment control electrode are connected to the transparent pixel electrode, and a transparent common electrode is located on an opposite transparent substrate, which is positioned opposite to the transparent TFT substrate, and the transparent TFT substrate is connected to common electrodes formed on the transparent TFT substrate.
摘要翻译：有源矩阵垂直取向液晶显示装置包括形成在TFT的透明基板上的透明像素电极，并且另一透明像素电极连接到TFT的透明基板的漏电极。在透明像素电极上设置透明绝缘膜; 并且在透明像素电极中设置多个细长狭缝并具有液晶取向功率，其中在透明绝缘层上形成细长的液晶取向控制电极和液晶取向控制电极连接到透明像素电极和透明公共电极位于与透明TFT基板相对的相对的透明基板上，并且透明TFT基板连接到形成在透明TFT基板上的公共电极。

9. 发明申请

US20100066962A1 LOW-COST LARGE-SCREEN WIDE-ANGLE FAST-RESPONSE LIQUID CRYSTAL DISPLAY APPARATUS 有权
公开(公告)号：US20100066962A1
公开(公告)日：2010-03-18
申请号：US12558050
申请日：2009-09-11
申请人： Sakae Tanaka , Toshiyuki Samejima
发明人： Sakae Tanaka , Toshiyuki Samejima
IPC分类号： G02F1/1337
CPC分类号： G02F1/134363 , G02F1/133707 , G02F2001/134372 , G02F2001/136231 , G02F2001/136236 , G02F2001/13712 , G09G3/3648 , G09G2310/0218 , G09G2310/0283
摘要： The present invention discloses a super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times. The invention adopts a halftone exposure technology to form a gate electrode, a common electrode, a pixel electrode and a contact pad, and then uses the halftone exposure technology to form a silicon (Si) island and a contact hole, and a general exposure technology to form a source electrode, a drain electrode and an orientation control electrode. A passivation layer uses a masking deposition method. A film is formed by using a P-CVD method, or a protective area is formed at a local area by using an ink coating method or spray method, and a TFT array substrate used for the super large wide-angle high-speed response liquid crystal display apparatus manufactured by using a photolithographic procedure for three times can be produced.

10. 发明申请

US20120149139A1 LOW-COST LARGE-SCREEN WIDE-ANGLE FAST-RESPONSE LIQUID CRYSTAL DISPLAY APPARATUS 审中-公开
标题翻译：低成本大屏幕宽角度快速响应液晶显示设备
公开(公告)号：US20120149139A1
公开(公告)日：2012-06-14
申请号：US13334338
申请日：2011-12-22
申请人： Sakae Tanaka , Toshiyuki Samejima
发明人： Sakae Tanaka , Toshiyuki Samejima
IPC分类号： H01L33/08
CPC分类号： G02F1/134363 , G02F1/133707 , G02F2001/134372 , G02F2001/136231 , G02F2001/136236 , G02F2001/13712 , G09G3/3648 , G09G2310/0218 , G09G2310/0283
摘要： A method of fabricating an IPS active matrix substrate, and said substrate constituting an active matrix display device, characterized in that: a photolithographic procedure is performed for three times for the manufacture: forming a gate electrode, a comb pixel electrode, a common electrode for shielding a video signal line (or a source electrode), a contact pad in said pixel electrode, and a video signal line for shielding said contact pad in common electrode, forming a separate thin film semiconductor layer component, and a contact hole, forming a source electrode, a drain electrode, a common electrode at the center of a pixel and a comb common electrode, such that after an ohmic contact layer of a channel portion of said thin film transistor is dry etched, a partial film of a passivation layer is formed by a silicon nitride film by using a mask deposition method is provided.
摘要翻译：一种制造IPS有源矩阵基板的方法，所述基板构成有源矩阵显示装置，其特征在于：对光刻工艺进行三次制造：形成栅电极，梳状像素电极，公共电极屏蔽视频信号线（或源电极），所述像素电极中的接触焊盘和用于屏蔽公共电极中的接触焊盘的视频信号线，形成单独的薄膜半导体层部件和接触孔，形成源电极，漏电极，像素中心的公共电极和梳状公共电极，使得在干法蚀刻所述薄膜晶体管的沟道部分的欧姆接触层之后，钝化层的局部膜为通过使用掩模沉积方法由氮化硅膜形成。

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