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    • 5. 发明申请
    • CELL STRUCTURE OF RANDOM ACCESS MEMORY, RANDOM ACCESS MEMORY AND OPERATION METHODS
    • 随机访问存储器的细胞结构,随机访问存储器和操作方法
    • US20160111146A1
    • 2016-04-21
    • US14772371
    • 2015-04-17
    • TSINGHUA UNIVERSITYGRADUATE SCHOOL AT SHENZHEN, TSINGHUA UNIVERSITY
    • LIYANG PANXINHONG HONGDONG WU
    • G11C11/419G11C11/418
    • G11C11/419G11C11/403G11C11/406G11C11/412G11C11/4125G11C11/418
    • The present disclosure provides a cell structure, a random access memory and operation methods. The cell structure with four transistors, including a first N-type transistor, a first P-type transistor, a second N-type transistor and a second P-type transistor, in which an absolute value of a threshold voltage of the first N-type transistor is greater than an absolute value of a threshold voltage of the second N-type transistor, and an absolute value of a threshold voltage of the first P-type transistor is greater than an absolute value of a threshold voltage of the second P-type transistor. The random access memory, including: two identical memory cell arrays including the cell structure with four transistors, a data write circuit and a data read circuit, by using Two Modular Redundancy harden method, and thus reading correctly and avoiding the mistake reversal caused by the single event upset effect.
    • 本公开提供了小区结构,随机存取存储器和操作方法。 具有四个晶体管的单元结构,包括第一N型晶体管,第一P型晶体管,第二N型晶体管和第二P型晶体管,其中第一N型晶体管的阈值电压的绝对值, 所述第一P型晶体管的阈值电压的绝对值大于所述第二P型晶体管的阈值电压的绝对值,并且所述第一P型晶体管的阈值电压的绝对值大于所述第二P型晶体管的阈值电压的绝对值, 型晶体管。 随机存取存储器包括:使用两个模块冗余硬化方法,包括具有四个晶体管的单元结构的两个相同的存储单元阵列,数据写入电路和数据读取电路,从而正确读取并避免由于 单事件不安的效果。