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1. 发明申请

US20140312266A1 POLISHING SLURRY AND METHOD OF POLISHING USING THE SAME 审中-公开
标题翻译：抛光浆和使用其抛光方法
公开(公告)号：US20140312266A1
公开(公告)日：2014-10-23
申请号：US14357768
申请日：2012-09-14
申请人： UBMATERIALS Inc.
发明人： Jea Gun Park , Gon Sub Lee , Jin Hyung Park , Jae Hyung Lim , Jong Young Cho , Hee Sub Hwang , Hao Cui
IPC分类号： C23F1/14
CPC分类号： C23F1/14 , C09G1/02 , C09K3/1409 , H01L21/3212 , H01L21/7684
摘要： Disclosed are a polishing slurry used in a polishing process of tungsten and a method of polishing using the same. The slurry includes an abrasive for performing polishing and an oxidation promoting agent for promoting the formation of an oxide. The abrasive includes titanium oxide particles.
摘要翻译：公开了用于钨的抛光工艺的抛光浆料和使用其的抛光方法。浆料包括用于进行抛光的研磨剂和用于促进氧化物形成的氧化促进剂。研磨剂包括氧化钛颗粒。

2. 发明授权

US09982165B2 Polishing slurry for silicon, method of polishing polysilicon and method of manufacturing a thin film transistor substrate 有权
公开(公告)号：US09982165B2
公开(公告)日：2018-05-29
申请号：US15355917
申请日：2016-11-18
申请人： SAMSUNG DISPLAY CO., LTD. , UBmaterials Inc.
发明人： Byoung-Kwon Choo , Jin-Hyung Park , Jeong-Kyun Na , Joon-Hwa Bae , Byoung-Ho Cheong , Joo-Woan Cho , In-Sun Hwang
IPC分类号： C09K13/04 , C09G1/02 , C09K3/14 , H01L27/12 , H01L29/786 , H01L21/321 , H01L27/32 , G02F1/1368
CPC分类号： C09G1/02 , B81C2201/0104 , C09K3/1409 , G02F1/1368 , G02F2202/104 , H01L21/3212 , H01L27/1222 , H01L27/1274 , H01L27/3262 , H01L29/66757 , H01L29/78675
摘要： A polishing slurry for silicon, a method of polishing polysilicon, and a method of manufacturing a thin film transistor substrate, the slurry including a polishing particle; a dispersing agent including an anionic polymer, a hydroxyl acid, or an amino acid; a stabilizing agent including an organic acid, the organic acid including a carboxyl group; a hydrophilic agent including a hydrophilic group and a hydrophobic group, and water, wherein the polishing particle is included in the polishing slurry in an amount of about 0.1% by weight to about 10% by weight, based on a total weight of the slurry, a weight ratio of the polishing particle and the dispersing agent is about 1:0.01 to about 1:0.2, a weight ratio of the polishing particle and the stabilizing agent is about 1:0.001 to about 1:0.1, and a weight ratio of the polishing particle and the hydrophilic agent is about 1:0.01 to about 1:3.

3. 发明授权

US09469800B2 Abrasive particle, polishing slurry, and method of manufacturing semiconductor device using the same 有权
标题翻译：研磨粒子，研磨浆料，以及使用其制造半导体器件的方法
公开(公告)号：US09469800B2
公开(公告)日：2016-10-18
申请号：US14483135
申请日：2014-09-10
申请人： UBMATERIALS INC.
发明人： Seung Won Jung
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/321 , C09K3/14 , C09G1/02 , C09G1/04 , H01L21/3105 , H01L27/115
CPC分类号： C09K3/1409 , C09G1/02 , C09G1/04 , C09K3/1436 , H01L21/31053 , H01L27/115
摘要： Provided are an abrasive particle including auxiliary particles formed on a surface of a mother particle, a polishing slurry prepared by mixing the abrasive particles with a polishing accelerating agent and a pH adjusting agent, and a method of manufacturing a semiconductor device in which an insulating layer is polished by the polishing slurry while using a conductive layer as a polishing stop layer.
摘要翻译：提供了包括在母粒表面上形成的辅助颗粒的磨料颗粒，通过将研磨颗粒与抛光促进剂和pH调节剂混合制备的研磨浆料，以及制造半导体器件的方法，其中绝缘层通过抛光浆料抛光，同时使用导电层作为抛光停止层。

4. 发明申请

US20160251547A1 POLISHING SLURRY AND METHOD OF POLISHING SUBSTRATE USING THE SAME 有权
标题翻译：抛光浆料和使用其抛光底材的方法
公开(公告)号：US20160251547A1
公开(公告)日：2016-09-01
申请号：US15047624
申请日：2016-02-18
申请人： UBMATERIALS INC.
发明人： Jin Hyung PARK
IPC分类号： C09G1/02
CPC分类号： C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/3212
摘要： Provided are a slurry for polishing tungsten and a method of polishing a substrate. The slurry according to an exemplary embodiment includes an abrasive configured to perform polishing and include particles having a positive zeta potential, a dispersant configure to disperse the abrasive, an oxidizer configured to oxidize a surface of the tungsten, a catalyst configured to promote oxidation of the tungsten, and a selectivity control agent configured to control a polishing selectivity and include an organic acid containing a carboxyl group. According to the slurry of the exemplary embodiment, a polishing selectivity between the tungsten and the insulation layer may be improved by suppressing a polishing rate of the insulation layer.
摘要翻译：提供了用于抛光钨的浆料和抛光基材的方法。根据示例性实施方案的浆料包括配置成进行抛光并且包括具有正ζ电位的颗粒的研磨剂，构造成分散磨料的分散剂，被配置为氧化钨表面的氧化剂，构造成促进氧化的催化剂钨和配置成控制抛光选择性的选择性控制剂，并且包括含有羧基的有机酸。根据本实施方式的浆料，可以通过抑制绝缘层的研磨速度来提高钨与绝缘层之间的抛光选择性。

5. 发明授权

US09758698B2 Polishing slurry and substrate polishing method using the same 有权
公开(公告)号：US09758698B2
公开(公告)日：2017-09-12
申请号：US15073625
申请日：2016-03-17
申请人： UBMATERIALS INC.
发明人： Jin Hyung Park
IPC分类号： H01L21/302 , H01L21/461 , C09G1/02 , H01L21/321
CPC分类号： C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/28079 , H01L21/3212
摘要： Provided are slurry for polishing cobalt and a substrate polishing method. The slurry includes an abrasive configured to perform the polishing, the abrasive comprising zirconium oxide particles, a dispersing agent configured to disperse the abrasive, and a polishing accelerator configured to accelerate the polishing. The polishing accelerator includes an organic acid containing an amine group and a carboxylic group. According to the slurry in accordance with an exemplary embodiment, a polishing rate of the cobalt may increases without using an oxidizing agent, and local corrosion defects on a surface of the cobalt may be suppressed.

6. 发明授权

US09206337B2 Methods of manufacturing abrasive particle and polishing slurry 有权
标题翻译：制造磨粒和抛光浆的方法
公开(公告)号：US09206337B2
公开(公告)日：2015-12-08
申请号：US14483140
申请日：2014-09-10
申请人： UBMATERIALS INC.
发明人： Seung Won Jung
IPC分类号： C09K13/00 , C09G1/02 , C09K3/14 , C01F17/00
CPC分类号： C09G1/02 , C01F17/0043 , C01P2004/40 , C01P2004/61 , C01P2004/62 , C01P2006/22 , C09K3/1409 , C09K3/1445 , C09K3/1463
摘要： Provided is a method of manufacturing an abrasive particle including a mother particle and a plurality of auxiliary particles formed on a surface of the mother particle, and a method of manufacturing a polishing slurry in which the abrasive particle is mixed with a polishing accelerating agent and a pH adjusting agent.
摘要翻译：提供一种制造包括母体颗粒和形成在母体颗粒表面上的多个辅助颗粒的磨料颗粒的方法，以及研磨浆料的制造方法，其中研磨颗粒与抛光促进剂和 pH调节剂。

7. 发明申请

US20150184028A1 POLISHING SLURRY AND SUBSTRATE POLISHING METHOD USING THE SAME 有权
标题翻译：使用相同的抛光浆料和底材抛光方法
公开(公告)号：US20150184028A1
公开(公告)日：2015-07-02
申请号：US14519122
申请日：2014-10-20
申请人： UBMATERIALS INC.
发明人： Seung Won JUNG
IPC分类号： C09G1/02 , C23F1/26 , H01L21/321
CPC分类号： C09G1/02 , C09K3/1454 , C09K3/1463 , C23F3/06 , H01L21/304 , H01L21/3212
摘要： A polishing slurry for tungsten and a substrate polishing method are disclosed. The polishing slurry includes an abrasive for performing polishing and having positive zeta potential, and a potential modulator for promoting the oxidation of the tungsten and for controlling the zeta potential of the abrasive.
摘要翻译：公开了一种用于钨的抛光浆料和基材研磨方法。抛光浆料包括用于进行抛光并具有正ζ电位的研磨剂，以及用于促进钨的氧化和用于控制研磨剂的ζ电位的电位调节器。

8. 发明申请

US20160272847A1 POLISHING SLURRY AND SUBSTRATE POLISHING METHOD USING THE SAME 有权
标题翻译：使用相同的抛光浆料和底材抛光方法
公开(公告)号：US20160272847A1
公开(公告)日：2016-09-22
申请号：US15073625
申请日：2016-03-17
申请人： UBMATERIALS INC.
发明人： Jin Hyung PARK
IPC分类号： C09G1/02 , H01L21/768 , H01L21/28 , H01L21/321
CPC分类号： C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/28079 , H01L21/3212
摘要： Provided are slurry for polishing cobalt and a substrate polishing method. The slurry includes an abrasive configured to perform the polishing, the abrasive comprising zirconium oxide particles, a dispersing agent configured to disperse the abrasive, and a polishing accelerator configured to accelerate the polishing. The polishing accelerator includes an organic acid containing an amine group and a carboxylic group. According to the slurry in accordance with an exemplary embodiment, a polishing rate of the cobalt may increases without using an oxidizing agent, and local corrosion defects on a surface of the cobalt may be suppressed.
摘要翻译：提供用于抛光钴的浆料和基材研磨方法。浆料包括构造成进行抛光的研磨剂，包含氧化锆颗粒的磨料，被配置成分散研磨剂的分散剂和被配置为加速抛光的抛光加速器。抛光促进剂包括含有胺基和羧基的有机酸。根据根据示例性实施方案的浆料，钴的抛光速率可以增加而不使用氧化剂，并且可以抑制钴表面上的局部腐蚀缺陷。

9. 发明申请

US20150072522A1 ABRASIVE PARTICLE, POLISHING SLURRY, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 有权
标题翻译：磨料颗粒，抛光浆和使用其制造半导体器件的方法
公开(公告)号：US20150072522A1
公开(公告)日：2015-03-12
申请号：US14483135
申请日：2014-09-10
申请人： UBMATERIALS INC.
发明人： Seung Won JUNG
IPC分类号： C09K3/14 , C09G1/02 , H01L21/3205 , H01L21/28 , C09G1/04 , H01L21/321
CPC分类号： C09K3/1409 , C09G1/02 , C09G1/04 , C09K3/1436 , H01L21/31053 , H01L27/115
摘要： Provided are an abrasive particle including auxiliary particles formed on a surface of a mother particle, a polishing slurry prepared by mixing the abrasive particles with a polishing accelerating agent and a pH adjusting agent, and a method of manufacturing a semiconductor device in which an insulating layer is polished by the polishing slurry while using a conductive layer as a polishing stop layer.
摘要翻译：提供了包括在母粒表面上形成的辅助颗粒的磨料颗粒，通过将研磨颗粒与抛光促进剂和pH调节剂混合制备的研磨浆料，以及制造半导体器件的方法，其中绝缘层通过抛光浆料抛光，同时使用导电层作为抛光停止层。

10. 发明授权

US11203703B2 Polishing slurry and method of polishing substrate by using the polishing slurry 有权
公开(公告)号：US11203703B2
公开(公告)日：2021-12-21
申请号：US16247730
申请日：2019-01-15
申请人： SAMSUNG DISPLAY CO., LTD. , UBmaterials Inc.
发明人： Hyunjin Cho , Joonhwa Bae , Byoungkwon Choo , Woojin Cho , Jinhyung Park
IPC分类号： H01L21/321 , H01L21/3105 , H01L21/306 , H01L21/302 , C09K3/14 , C09G1/04 , C09G1/02 , C09G1/00 , B24B37/04
摘要： A polishing slurry includes an abrasive material, a first oxide polishing promoter, a first nitride polishing inhibitor, and a second nitride polishing inhibitor. The first oxide polishing promoter includes a polymer-based oxide polishing promoter. The first nitride polishing inhibitor includes an anionic nitride polishing inhibitor. The second nitride polishing inhibitor includes at least one selected from a cationic nitride polishing inhibitor and a non-ionic nitride polishing inhibitor.

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