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    • 3. 发明申请
    • Complexing agent for treating metallic and plastic surfaces
    • 用于处理金属和塑料表面的络合剂
    • US20050209117A1
    • 2005-09-22
    • US10518447
    • 2003-06-18
    • Ralf FriedrichWerner HesseHans-Ulrich JagerHelmut Witteler
    • Ralf FriedrichWerner HesseHans-Ulrich JagerHelmut Witteler
    • C09K3/00C08G73/02C08J7/04C08K3/24C08K3/30C08K3/32C09D179/02C23C18/20C23C18/36C23C18/40C25D3/02C25D3/22C25D3/38C25D3/48C25F1/00H05K3/18C11D1/00
    • C08J7/047C08G73/0233C08J2479/00C08K3/24C08K3/30C08K3/32C09D179/02C23C18/2006C23C18/2073C23C18/285C23C18/30C23C18/36C23C18/405C25D3/02C25D3/22C25D3/38C25D3/48C25F1/00H05K3/181C08L79/08
    • A composition for the surface treatment of metals and for the deposition of metals or metal alloys and plastics surfaces comprises a) at least one polymer as component A, comprising at least one structural unit of the formula (I)  where this structural unit may be part of a polymer main chain or may be bound to a polymer main chain via an anchor group, and  M is hydrogen or an ammonium or metal cation; b) water or another solvent which is suitable for dissolving, dispersing, suspending or emulsifying the polymer (component A), as component B; c) if required, surface-active compounds, dispersants, suspending media and/or emulsifiers as component C;  either d) if required, a salt, an acid or a base based on transition metal cations, transition metal oxoanions, fluorometallates or lanthanoids as component D, and/or e) at least one acid selected from the group consisting of phosphoric acid, sulfuric acid, sulfonic acid, nitric acid, hydrofluoric acid and hydrochloric acid as component E, or a base and/or f) at least one metal oxide and/or metal salt as component F. Furthermore, in a process for the surface treatment of metals and in a process for the deposition of metals or metal alloys on a metal surface or plastics surface, the metal surface or plastics surface is brought into contact with a polymer (component A). Moreover, polymers (component A) are used for the surface treatment of metals and for the deposition of metals or metal alloys on a metal surface or plastics surface.
    • 用于表面处理金属和金属或金属合金和塑料表面沉积的组合物包括a)至少一种作为组分A的聚合物,其包含至少一种式(I)的结构单元,其中该结构单元可以是部分 的聚合物主链,或者可以通过锚定基团与聚合物主链结合,M是氢或铵或金属阳离子; b)适于溶解,分散,悬浮或乳化聚合物(组分A)的水或其它溶剂作为组分B; c)如果需要,表面活性化合物,分散剂,悬浮介质和/或乳化剂作为组分C; d)如果需要,基于过渡金属阳离子,过渡金属氧代阴离子,氟金属盐或镧系元素作为组分D的盐,酸或碱,和/或e)至少一种选自磷酸,硫酸 酸,磺酸,硝酸,氢氟酸和盐酸作为组分E,或碱和/或f)至少一种作为组分F的金属氧化物和/或金属盐。此外,在金属表面处理方法 并且在金属表面或塑料表面上沉积金属或金属合金的过程中,金属表面或塑料表面与聚合物(组分A)接触。 此外,聚合物(组分A)用于金属表面处理和金属或金属合金在金属表面或塑料表面上的沉积。
    • 9. 发明申请
    • METHOD FOR LCOAL HIGH-DOPING AND CONTACTING OF A SEMICONDUCTOR STRUCTURE WHICH COMPRISES A SOLAR CELL OR A PRECURSOR OF A SOLAR CELL
    • US20120301995A1
    • 2012-11-29
    • US13575446
    • 2011-01-18
    • Dominik SuwitoJan BenickUlrich Jager
    • Dominik SuwitoJan BenickUlrich Jager
    • H01L31/0232
    • H01L31/1804H01L21/268H01L31/02168H01L31/022425H01L31/061Y02E10/547Y02P70/521
    • The invention relates to a method for local high-doping and contacting of a semiconductor structure which is a solar cell or a precursor of a solar cell and has a silicon semiconductor substrate (1) of a base doping type. The high-doping and contacting is effected by producing a plurality of local high-doping regions of the base doping type in the semiconductor substrate (1) on a contacting side (1a) of the semiconductor substrate and applying a metal contacting layer (7) to the contacting side (1a) or, if applicable, one or more intermediate layers wholly or partially covering the contacting side (1a), to form electrically conductive connections between the metal contacting layer (7) and the semiconductor substrate (1) at the high doping regions. It is important that the method comprises the following steps: A) producing a layer structure covering the contacting side (1 a) of the semiconductor substrate, comprising a doping layer (3), which contains a dopant of the base doping type and is in the form of a layer of amorphous silicon or a layer of amorphous silicon carbide having a carbon content less than 10 at. % and a reflective layer (4), which at least in the wavelength range between 800 nm and 1200 nm is constructed with a refractive index nR smaller than the refractive index nHs of the semiconductor substrate, wherein the doping layer (3) lying in the layer sequence closer to the contacting side (1 a) is constructed as the reflective layer (4); B) local heating of layer structure and the surface lying thereunder of the semiconductor substrate at a plurality of zones to form local high-doping regions, wherein the local heating is effected such that at each of the locally heated regions a melt mixture of at least the doping layer (3) and a portion of the semiconductor substrate is formed locally on the contacting side (1 a), and on solidification of the melt mixture a high doping region (6) more strongly doped by at least the dopant of the doping layer (3) is formed in the semiconductor substrate (1) on the contacting side (1 a), and applying a metal contacting layer (7) to form an electrically conductive connection between semiconductor substrate (1) and contacting layer (7) at the high-doping regions.