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1. 发明授权

US08289765B2 Active strap magnetic random access memory cells configured to perform thermally-assisted writing 有权
标题翻译：配置为执行热辅助写入的主动磁带随机存取存储单元
公开(公告)号：US08289765B2
公开(公告)日：2012-10-16
申请号：US12708584
申请日：2010-02-19
申请人： Virgile Javerliac , Erwan Gapihan , Mourad El Baraji
发明人： Virgile Javerliac , Erwan Gapihan , Mourad El Baraji
IPC分类号： G11C11/14
CPC分类号： G11C11/1675 , G11C11/1659
摘要： A magnetic random access memory (MRAM) cell with a thermally assisted writing procedure comprising a magnetic tunnel junction formed from a magnetic storage layer, a reference layer, and an insulating layer inserted between the reference layer and the storage layer; and a first strap portion laterally connecting one end of the magnetic tunnel junction to a first selection transistor; wherein the cell further comprises a second strap portion extending opposite to the first strap portion and connecting laterally said one end of the magnetic tunnel junction to a second selection transistor, and in that said first and second strap portions being adapted for passing a portion of current via the first and second selection transistors. The disclosed cell has lower power consumption than conventional MRAM cells.
摘要翻译：一种具有热辅助写入程序的磁性随机存取存储器（MRAM）单元，包括由磁性存储层，参考层和插入参考层和存储层之间的绝缘层形成的磁性隧道结; 以及将所述磁性隧道结的一端横向连接到第一选择晶体管的第一带部分; 其中所述电池还包括与所述第一带部分相对延伸并且将所述磁性隧道结的所述一端横向连接到第二选择晶体管的第二带部分，并且所述第一和第二带部分适于使电流的一部分经由第一和第二选择晶体管。所公开的电池具有比常规MRAM电池低的功率消耗。

2. 发明授权

US08228703B2 Ternary Content Addressable Magnetoresistive random access memory cell 有权
标题翻译：三元内容可寻址磁阻随机存取存储单元
公开(公告)号：US08228703B2
公开(公告)日：2012-07-24
申请号：US12609602
申请日：2009-10-30
申请人： Virgile Javerliac , Mourad El Baraji
发明人： Virgile Javerliac , Mourad El Baraji
IPC分类号： G11C15/00 , G11C15/02
CPC分类号： G11C15/02 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C15/046
摘要： A method for writing a magnetic random access memory-based ternary content addressable memory cell comprising a first magnetic tunnel junction being formed from a storage layer, a sense layer having a magnetization direction adjustable relative to the magnetization of the storage layer, and an insulating layer between the storage and sense layers; a sense line coupled with the storage layer; a first field line and a second field line, and the first field line being orthogonal to the second field line; comprising: providing a first write data to said storage layer via the second field line to store a first stored data with a high or low logic state; characterized in that, the method further comprises providing the first write data to said storage layer via the first field line to store the first stored data with a masked logic state.
摘要翻译：一种用于写入基于磁性随机存取存储器的三元内容可寻址存储单元的方法，包括由存储层形成的第一磁性隧道结，具有相对于存储层的磁化可调整的磁化方向的感测层，以及绝缘层存储和感应层之间; 与存储层耦合的感测线; 第一场线和第二场线，并且所述第一场线与所述第二场线正交; 包括：经由所述第二场线向所述存储层提供第一写入数据以存储具有高或低逻辑状态的第一存储数据; 其特征在于，所述方法还包括经由所述第一场线向所述存储层提供所述第一写入数据，以存储具有屏蔽的逻辑状态的所述第一存储数据。

3. 发明授权

US07944736B2 Magnetoresistive device 有权
标题翻译：磁阻器件
公开(公告)号：US07944736B2
公开(公告)日：2011-05-17
申请号：US11989380
申请日：2006-07-26
申请人： Bernard Dieny , Virgile Javerliac
发明人： Bernard Dieny , Virgile Javerliac
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： The device comprises two magnetoresistive elements (10, 20) placed relative to each other in magnetostatic interaction in such a manner that a magnetic flux passing between these elements (10, 20) closes through soft ferromagnetic layers (26, 27) of said elements (10, 20). A write device (15) is associated with the elements (10, 20) to control the magnetization of each soft layer (26, 27). A read conductor line (11, 12, 13, 14) is associated with each magnetoresistive element (10, 20) to detect the magnetic state of the soft layer (26, 27) by measuring the corresponding magnetoresistance. The soft ferromagnetic layers (26, 27) of the elements (10, 20) remain oriented substantially in antiparallel relative to each other, while the hard ferromagnetic layers (24) of said elements (10, 20) are oriented substantially in parallel.
摘要翻译：该装置包括以静磁相互作用相对于彼此放置的两个磁阻元件（10,20），使得通过这些元件（10,20）之间的磁通量通过所述元件的软铁磁层（26,27） 10，20）。写装置（15）与元件（10,20）相关联，以控制每个软层（26,27）的磁化。读导体线（11,12,13,14）与每个磁阻元件（10,20）相关联，以通过测量相应的磁阻来检测软层（26,27）的磁状态。元件（10,20）的软铁磁层（26,27）保持基本相对于彼此反平行取向，而所述元件（10,20）的硬铁磁层（24）基本上平行取向。

4. 发明申请

US20100208516A1 ACTIVE STRAP MAGNETIC RANDOM ACCESS MEMORY CELLS 有权
标题翻译：主动带磁性随机存取存储器
公开(公告)号：US20100208516A1
公开(公告)日：2010-08-19
申请号：US12708584
申请日：2010-02-19
申请人： Virgile JAVERLIAC , Erwan GAPIHAN , Mourad EL BARAJI
发明人： Virgile JAVERLIAC , Erwan GAPIHAN , Mourad EL BARAJI
IPC分类号： G11C11/14 , G11C11/416
CPC分类号： G11C11/1675 , G11C11/1659
摘要： A magnetic random access memory (MRAM) cell with a thermally assisted writing procedure comprising a magnetic tunnel junction formed from a magnetic storage layer, a reference layer, and an insulating layer inserted between the reference layer and the storage layer; and a first strap portion laterally connecting one end of the magnetic tunnel junction to a first selection transistor; wherein the cell further comprises a second strap portion extending opposite to the first strap portion and connecting laterally said one end of the magnetic tunnel junction to a second selection transistor, and in that said first and second strap portions being adapted for passing a portion of current via the first and second selection transistors. The disclosed cell has lower power consumption than conventional MRAM cells.
摘要翻译：一种具有热辅助写入程序的磁性随机存取存储器（MRAM）单元，包括由磁性存储层，参考层和插入参考层和存储层之间的绝缘层形成的磁性隧道结; 以及将所述磁性隧道结的一端横向连接到第一选择晶体管的第一带部分; 其中所述电池还包括与所述第一带部分相对延伸并且将所述磁性隧道结的所述一端横向连接到第二选择晶体管的第二带部分，并且所述第一和第二带部分适于使电流的一部分经由第一和第二选择晶体管。所公开的电池具有比常规MRAM电池低的功率消耗。

5. 发明申请

US20090316476A1 SHARED LINE MAGNETIC RANDOM ACCESS MEMORY CELLS 有权
标题翻译：共享线磁性随机存取存储器
公开(公告)号：US20090316476A1
公开(公告)日：2009-12-24
申请号：US12485359
申请日：2009-06-16
申请人： Virgile Javerliac , Neal Berger , Kenneth MacKay , Jean-Pierre Nozleres
发明人： Virgile Javerliac , Neal Berger , Kenneth MacKay , Jean-Pierre Nozleres
IPC分类号： G11C11/15 , G11C7/00
CPC分类号： H01L27/228 , G11C5/063 , G11C11/1659 , G11C11/1675
摘要： A memory unit with one field line; at least two thermally-assisted switching magnetic tunnel junction-based magnetic random access memory cells, each cell comprising a magnetic tunnel junction having an insulating layer disposed between a magnetic storage layer and a magnetic reference layer; wherein a selection transistor is connected to the magnetic tunnel junction; the one field line is used for passing a field current for switching a magnetization of the storage layer of the magnetic tunnel junctions of the cells. A magnetic memory device can be formed by assembling an array of the memory units, wherein at least two adjacent magnetic tunnel junctions of the cells can be addressed simultaneously by the field line. The memory unit and magnetic memory device have a reduced surface area. Magnetic memory devices with an increased density of memory units can be fabricated resulting in lower die fabrication cost and lower power consumption.
摘要翻译：具有一个场线的存储单元; 至少两个热辅助切换磁隧道结磁性随机存取存储器单元，每个单元包括具有设置在磁存储层和磁参考层之间的绝缘层的磁性隧道结; 其中选择晶体管连接到所述磁性隧道结; 一个场线用于通过用于切换单元的磁隧道结的存储层的磁化的场电流。可以通过组装存储器单元的阵列来形成磁存储器件，其中可以通过场线同时寻址单元的至少两个相邻磁隧道结。存储单元和磁存储器件具有减小的表面积。可以制造具有增加的存储器单元密度的磁存储器件，从而导致较低的管芯制造成本和较低的功率消耗。

6. 发明申请

US20090109719A1 System and Method for Providing Content-Addressable Magnetoresistive Random Access Memory Cells 有权
公开(公告)号：US20090109719A1
公开(公告)日：2009-04-30
申请号：US12348830
申请日：2009-01-05
申请人： Jean-Pierre Nozieres , Virgile Javerliac
发明人： Jean-Pierre Nozieres , Virgile Javerliac
IPC分类号： G11C15/02
CPC分类号： G11C15/046 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C15/02
摘要： A content-addressable random access memory having magnetic tunnel junction-based memory cells and methods for making and using same. The magnetic tunnel junction has first and second magnetic layers and can act as a data store and a data sense. Within each cell, registered data is written by setting a magnetic orientation of the first magnetic layer in the magnetic tunnel junction via current pulses in one or more current lines. Input data for comparison with the registered data can be similarly set through the magnetic orientation of the second magnetic layer via the current lines. The data sense is performed by measuring cell resistance, which depends upon the relative magnetic orientation of the magnetic layers. Since data storage, data input, and data sense are integrated into one cell, the memory combines higher densities with non-volatility. The memory can support high speed, reduced power consumption, and data masking.

7. 发明授权

US08031519B2 Shared line magnetic random access memory cells 有权
标题翻译：共享线磁随机存取存储单元
公开(公告)号：US08031519B2
公开(公告)日：2011-10-04
申请号：US12485359
申请日：2009-06-16
申请人： Virgile Javerliac , Neal Berger , Kenneth Mackay , Jean-Pierre Nozieres
发明人： Virgile Javerliac , Neal Berger , Kenneth Mackay , Jean-Pierre Nozieres
IPC分类号： G11C11/15 , G11C7/00
CPC分类号： H01L27/228 , G11C5/063 , G11C11/1659 , G11C11/1675
摘要： A memory unit with one field line; at least two thermally-assisted switching magnetic tunnel junction-based magnetic random access memory cells, each cell comprising a magnetic tunnel junction having an insulating layer disposed between a magnetic storage layer and a magnetic reference layer; wherein a selection transistor is connected to the magnetic tunnel junction; the one field line is used for passing a field current for switching a magnetization of the storage layer of the magnetic tunnel junctions of the cells. A magnetic memory device can be formed by assembling an array of the memory units, wherein at least two adjacent magnetic tunnel junctions of the cells can be addressed simultaneously by the field line. The memory unit and magnetic memory device have a reduced surface area. Magnetic memory devices with an increased density of memory units can be fabricated resulting in lower die fabrication cost and lower power consumption.
摘要翻译：具有一个场线的存储单元; 至少两个热辅助切换磁隧道结磁性随机存取存储器单元，每个单元包括具有设置在磁存储层和磁参考层之间的绝缘层的磁性隧道结; 其中选择晶体管连接到所述磁性隧道结; 一个场线用于通过用于切换单元的磁隧道结的存储层的磁化的场电流。可以通过组装存储器单元的阵列来形成磁存储器件，其中可以通过场线同时寻址单元的至少两个相邻磁隧道结。存储单元和磁存储器件具有减小的表面积。可以制造具有增加的存储器单元密度的磁存储器件，从而导致较低的管芯制造成本和较低的功率消耗。

8. 发明授权

US07944231B2 Electronic device for the transport of numerical information 失效
标题翻译：用于运输数字信息的电子设备
公开(公告)号：US07944231B2
公开(公告)日：2011-05-17
申请号：US12053028
申请日：2008-03-21
申请人： Virgile Javerliac
发明人： Virgile Javerliac
IPC分类号： H03K17/16 , H03K19/003
CPC分类号： H04L25/0266 , H01L27/101 , H04L25/0272
摘要： An electronic device designed to transport digital information (“0”, “1”) over long distances, including a transmitter generating current pulses and at least one assembly of receivers converting the received current pulses into logic pulses which are compatible with the operation of standard electronic logic circuits. Each receiver includes a pair of magnetoresistive stacks containing at least one hard ferromagnetic layer and one soft ferromagnetic layer separated by a non-ferromagnetic interlayer, the hard layer of each of the magnetoresistive stacks being pinned in a magnetic orientation perpendicular to an easy-magnetization axis which is used as a reference for the soft layer of the same stack. The soft layer of each magnetoresistive stack has a magnetic orientation which can be modulated by the magnetic field generated by current pulses delivered by the transmitter so as to cause modification of the transverse resistance of the stack sufficient to trigger an electrical signal.
摘要翻译：一种设计用于长距离传输数字信息（“0”，“1”）的电子设备，包括发送电流脉冲的发射机和至少一个将接收到的当前脉冲转换成与标准操作兼容的逻辑脉冲的接收器组合电子逻辑电路。每个接收器包括一对磁阻堆叠，其包含至少一个硬铁磁层和由非铁磁中间层分隔的一个软铁磁层，每个磁阻堆叠的硬层被固定在垂直于易磁化轴的磁方向上其用作相同堆栈的软层的参考。每个磁阻堆叠的软层具有可由由发射器传送的电流脉冲产生的磁场调制的磁取向，从而使叠层的横向电阻修改足以触发电信号。

9. 发明申请

US20090213632A1 System and Method for Providing Content-Addressable Magnetoresistive Random Access Memory Cells 有权
标题翻译：提供内容寻址磁阻随机存取存储单元的系统和方法
公开(公告)号：US20090213632A1
公开(公告)日：2009-08-27
申请号：US12422752
申请日：2009-04-13
申请人： Jean-Pierre Nozieres , Virgile Javerliac
发明人： Jean-Pierre Nozieres , Virgile Javerliac
IPC分类号： G11C15/02 , G11C11/416 , G11C11/14
CPC分类号： G11C15/046 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C15/02
摘要： A content-addressable random access memory having magnetic tunnel junction-based memory cells and methods for making and using same. The magnetic tunnel junction has first and second magnetic layers and can act as a data store and a data sense. Within each cell, registered data is written by setting a magnetic orientation of the first magnetic layer in the magnetic tunnel junction via current pulses in one or more current lines. Input data for comparison with the registered data can be similarly set through the magnetic orientation of the second magnetic layer via the current lines. The data sense is performed by measuring cell resistance, which depends upon the relative magnetic orientation of the magnetic layers. Since data storage, data input, and data sense are integrated into one cell, the memory combines higher densities with non-volatility. The memory can support high speed, reduced power consumption, and data masking.
摘要翻译：一种具有磁性隧道结的存储单元的内容寻址随机存取存储器及其制造和使用方法。磁隧道结具有第一和第二磁性层，并且可以用作数据存储和数据感测。在每个单元内，通过在一个或多个电流线路中经由电流脉冲设置磁性隧道结中的第一磁性层的磁性取向来写入登记数据。用于与登记数据进行比较的输入数据可以通过第二磁性层经由电流线的磁取向相似地设定。数据检测通过测量电池电阻来执行，这取决于磁性层的相对磁性取向。由于数据存储，数据输入和数据检测被集成到一个单元中，存储器将较高密度与非易失性相结合。内存可以支持高速，降低功耗和数据屏蔽。

10. 发明申请

US20080084724A1 System and Method for Providing Content-Addressable Magnetoresistive Random Access Memory Cells 有权
标题翻译：提供内容寻址磁阻随机存取存储单元的系统和方法
公开(公告)号：US20080084724A1
公开(公告)日：2008-04-10
申请号：US11869632
申请日：2007-10-09
申请人： Jean-Pierre Nozieres , Virgile Javerliac
发明人： Jean-Pierre Nozieres , Virgile Javerliac
IPC分类号： G11C15/02 , G11C11/00
CPC分类号： G11C15/046 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C15/02
摘要： A content-addressable random access memory having magnetic tunnel junction-based memory cells and methods for making and using same. The magnetic tunnel junction has first and second magnetic layers and can act as a data store and a data sense. Within each cell, registered data is written by setting a magnetic orientation of the first magnetic layer in the magnetic tunnel junction via current pulses in one or more current lines. Input data for comparison with the registered data can be similarly set through the magnetic orientation of the second magnetic layer via the current lines. The data sense is performed by measuring cell resistance, which depends upon the relative magnetic orientation of the magnetic layers. Since data storage, data input, and data sense are integrated into one cell, the memory combines higher densities with non-volatility. The memory can support high speed, reduced power consumption, and data masking.
摘要翻译：一种具有磁性隧道结的存储单元的内容寻址随机存取存储器及其制造和使用方法。磁隧道结具有第一和第二磁性层，并且可以用作数据存储和数据感测。在每个单元内，通过在一个或多个电流线路中经由电流脉冲设置磁性隧道结中的第一磁性层的磁性取向来写入登记数据。用于与登记数据进行比较的输入数据可以通过第二磁性层经由电流线的磁取向相似地设定。数据检测通过测量电池电阻来执行，这取决于磁性层的相对磁性取向。由于数据存储，数据输入和数据检测被集成到一个单元中，存储器将较高密度与非易失性相结合。内存可以支持高速，降低功耗和数据屏蔽。

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