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1. 发明授权

US07816205B2 Method of forming non-volatile memory having charge trap layer with compositional gradient 失效
标题翻译：形成具有组成梯度的电荷陷阱层的非易失性存储器的方法
公开(公告)号：US07816205B2
公开(公告)日：2010-10-19
申请号：US12256119
申请日：2008-10-22
申请人： Mihaela Balseanu , Vladimir Zubkov , Li-Qun Xia , Atif Noori , Reza Arghavani , Derek R. Witty , Amir Al-Bayati
发明人： Mihaela Balseanu , Vladimir Zubkov , Li-Qun Xia , Atif Noori , Reza Arghavani , Derek R. Witty , Amir Al-Bayati
IPC分类号： H01L21/336 , H01L21/31 , H01L27/088 , H01L27/105
CPC分类号： H01L21/3185 , H01L21/28282 , H01L21/3105 , H01L21/3115 , H01L21/31155 , H01L29/42332 , H01L29/7881 , H01L29/792
摘要： A flash memory device and method of forming a flash memory device are provided. The flash memory device includes a silicon nitride layer having a compositional gradient in which the ratio of silicon to nitrogen varies through the thickness of the layer. The silicon nitride layer having a compositional gradient of silicon and nitrogen provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.
摘要翻译：提供一种形成闪速存储器件的闪速存储器件和方法。闪速存储器件包括具有组成梯度的氮化硅层，其中硅与氮的比例通过该层的厚度而变化。具有硅和氮的组成梯度的氮化硅层提供了非易失性存储器件的单元电池的电荷保持容量和电荷保留时间的增加。

2. 发明申请

US20080034025A1 Method for Development of Independent Multivariate Calibration Models 审中-公开
标题翻译：独立多变量校准模型的开发方法
公开(公告)号：US20080034025A1
公开(公告)日：2008-02-07
申请号：US11572626
申请日：2005-07-04
申请人： Vladimir Zubkov , Konstantin Zharinov , Aleksandr Shamrai
发明人： Vladimir Zubkov , Konstantin Zharinov , Aleksandr Shamrai
IPC分类号： G06F17/15 , G01D21/00 , G06F17/14
CPC分类号： G01D18/00
摘要： A method is provided for development of independent multivariate calibration models used for determination of secondary properties of a sample based on results of measurements of plurality of primary properties of the sample on target instrument. The method allows development of an independent calibration model for the target instrument regarding results of measurements of plurality of primary properties for sufficient amount of calibration samples with known secondary properties at the reference instrument. In this method, a set of transfer samples are selected, and a plurality of measurements of primary properties are made for each transfer sample using both reference and target instruments. Then relationships of transformation are generated from comparison of the target and reference instruments responses to the transfer samples. These relationships capable to perform a multivariate estimations of the target instrument response for each sample from the calibration set based on the reference instrument responses for those samples. The estimated responses of the target instrument for calibration samples are then used to calculate calibration constants in relationships relating estimated primary properties of each calibration sample to known corresponding secondary properties. Thus, an independent calibration model is developed at the target instrument, which allows extending of the calibration sample set and using outlier statistics for detection of outlier samples in the calibration set and for identification of unknown sample that can be analyzed.
摘要翻译：提供了一种用于开发用于基于目标仪器上的样品的多个主要性质的测量结果来确定样品的二次性质的独立多变量校准模型的方法。该方法允许开发针对目标仪器的独立校准模型，以了解在参考仪器上具有已知二次性质的足够量的校准样品的多个主要性质的测量结果。在该方法中，选择一组转移样本，并且使用参考和目标仪器对每个转移样品进行多个主要性质的测量。然后通过目标和参考仪器响应与转移样本的比较产生转化关系。这些关系能够基于对于这些样本的参考仪器响应，来从校准集合执行针对每个样本的目标仪器响应的多变量估计。然后，用于校准样品的目标仪器的估计响应用于在将每个校准样品的估计主要性质与已知相应的次级性质相关联的关系中计算校准常数。因此，在目标仪器上开发了独立的校准模型，其允许扩展校准样品组并使用异常值统计量来检测校准组中的异常值样品并识别可分析的未知样品。

3. 发明授权

US07081296B2 Method for growing thin films 有权
标题翻译：生长薄膜的方法
公开(公告)号：US07081296B2
公开(公告)日：2006-07-25
申请号：US10804980
申请日：2004-03-16
申请人： Sheldon Aronowitz , Vladimir Zubkov , Richard Schinella
发明人： Sheldon Aronowitz , Vladimir Zubkov , Richard Schinella
IPC分类号： C23C16/00
CPC分类号： C23C16/45525 , C23C16/455 , C23C16/45527 , C23C16/463 , H01L21/3141 , Y10T428/265
摘要： A method of forming a layer over a substrate is provided. Generally, a layer of a first reactive species is deposited over the substrate. The layer of the first reactive species is reacted with a second reactive species to create a first product. Unreacted reactive species is preferentially desorbed leaving a layer of the first product.
摘要翻译：提供了一种在衬底上形成层的方法。通常，在衬底上沉积一层第一反应性物质。第一反应性物质的层与第二反应性物质反应以产生第一产物。未反应的反应物质优先解吸，留下第一产物的一层。

4. 发明授权

US07015096B1 Bimetallic oxide compositions for gate dielectrics 失效
标题翻译：用于栅极电介质的双金属氧化物组合物
公开(公告)号：US07015096B1
公开(公告)日：2006-03-21
申请号：US10883137
申请日：2004-07-01
申请人： Vladimir Zubkov , Sey-Shing Sun
发明人： Vladimir Zubkov , Sey-Shing Sun
IPC分类号： H01L21/336
CPC分类号： H01L21/28194 , H01L29/517
摘要： In one embodiment, bimetallic oxide compositions for gate dielectrics that include two or more of the elements Ca, Sr, Ba, Hf, and Zr are described.
摘要翻译：在一个实施方案中，描述了包括元素Ca，Sr，Ba，Hf和Zr中的两种或更多种的栅极电介质的双金属氧化物组合物。

5. 发明授权

US06989565B1 Memory device having an electron trapping layer in a high-K dielectric gate stack 失效
标题翻译：在高K电介质栅叠层中具有电子俘获层的存储器件
公开(公告)号：US06989565B1
公开(公告)日：2006-01-24
申请号：US10698169
申请日：2003-10-31
申请人： Sheldon Aronowitz , Vladimir Zubkov , Grace S. Sun
发明人： Sheldon Aronowitz , Vladimir Zubkov , Grace S. Sun
IPC分类号： H01L29/792
CPC分类号： H01L29/517 , H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/78
摘要： An improved semiconductor memory structure and methods for its fabrication are disclosed. The memory structure includes a semiconductor substrate having a dielectric stack formed over a channel region of a semiconductor substrate. The dielectric stack includes a layer of electron trapping material that operates as a charge storage center for memory devices. A gate electrode is connected with the top of the dielectric stack. In various embodiments the electron trapping material forms a greater or lesser portion of the dielectric stack. The invention includes a method embodiment for forming such a memory device.
摘要翻译：公开了一种改进的半导体存储器结构及其制造方法。存储器结构包括具有在半导体衬底的沟道区上形成的电介质叠层的半导体衬底。电介质堆叠包括作为存储器件的电荷存储中心工作的电子俘获材料层。栅电极与电介质叠层的顶部连接。在各种实施例中，电子捕获材料形成介电叠层的更大或更小部分。本发明包括用于形成这种存储器件的方法实施例。

6. 发明授权

US06511925B1 Process for forming high dielectric constant gate dielectric for integrated circuit structure 有权
标题翻译：用于形成用于集成电路结构的高介电常数栅极电介质的工艺
公开(公告)号：US06511925B1
公开(公告)日：2003-01-28
申请号：US10033164
申请日：2001-10-19
申请人： Sheldon Aronowitz , Vladimir Zubkov , Helmut Puchner
发明人： Sheldon Aronowitz , Vladimir Zubkov , Helmut Puchner
IPC分类号： H01L218238
CPC分类号： H01L21/28185 , H01L21/2236 , H01L21/265 , H01L29/517
摘要： In accordance with the invention a high-k gate dielectric is formed by the steps of first forming a silicon oxide layer over a silicon substrate and then exposing the silicon oxide to a flux of low energy plasma containing metal ions which, when inserted into silicon oxide, form a high-k dielectric material suitable for use as a high-k gate dielectric. In one embodiment, the silicon oxide is exposed to a first plasma containing a first species of metal ions and then to a plasma of another species of metal ions which, when inserted into the silicon oxide with the metal ions in the first plasma, further increase the dielectric constant of the silicon oxide.
摘要翻译：根据本发明，通过以下步骤形成高k栅极电介质：首先在硅衬底上形成氧化硅层，然后将氧化硅暴露于含有金属离子的低能量等离子体的焊剂中，该金属离子当插入到氧化硅形成适合用作高k栅极电介质的高k电介质材料。在一个实施例中，氧化硅暴露于含有第一种金属离子的第一等离子体，然后暴露于另一种金属离子的等离子体，当等离子体中的金属离子插入到氧化硅中时，其进一步增加氧化硅的介电常数。

7. 发明授权

US08778816B2 In situ vapor phase surface activation of SiO2 有权
标题翻译： SiO2原位气相表面活化
公开(公告)号：US08778816B2
公开(公告)日：2014-07-15
申请号：US13192041
申请日：2011-07-27
申请人： Tatsuya E. Sato , David Thompson , Jeffrey W. Anthis , Vladimir Zubkov , Steven Verhaverbeke , Roman Gouk , Maitreyee Mahajani , Patricia M. Liu , Malcolm J. Bevan
发明人： Tatsuya E. Sato , David Thompson , Jeffrey W. Anthis , Vladimir Zubkov , Steven Verhaverbeke , Roman Gouk , Maitreyee Mahajani , Patricia M. Liu , Malcolm J. Bevan
IPC分类号： H01L21/31
CPC分类号： H01L21/3105 , C23C16/0272 , C23C16/405 , C23C16/45525 , H01L21/02164 , H01L21/02181 , H01L21/0228 , H01L21/02312
摘要： Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water below the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.
摘要翻译：描述制备用于后续成膜工艺的基材的方法。还描述了不浸没在水溶液中制备用于后续成膜工艺的基材的方法。描述了一种方法，其包括将衬底设置到处理室中，所述衬底具有基本上没有反应性表面终止的热氧化物表面。热氧化物表面在基底的温度下暴露于低于饱和蒸汽压的水分压，以将基本上没有反应性表面终止的致密热氧化物转化成具有羟基表面终止的表面。这可以在诸如氨的路易斯碱存在下进行。

8. 发明授权

US08753989B2 Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure 有权
标题翻译：使用后PECVD沉积UV固化来增加氮化硅膜的拉伸应力的方法
公开(公告)号：US08753989B2
公开(公告)日：2014-06-17
申请号：US13365229
申请日：2012-02-02
申请人： Mihaela Balseanu , Michael S. Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
发明人： Mihaela Balseanu , Michael S. Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
IPC分类号： H01L21/31
CPC分类号： C23C16/345 , C23C16/45523 , C23C16/56 , H01L21/3141 , H01L21/3185 , H01L21/823412 , H01L21/82345 , H01L21/823807 , H01L21/823835
摘要： High tensile stress in a deposited layer, such as a silicon nitride layer, may be achieved utilizing one or more techniques employed either alone or in combination. In one embodiment, a silicon nitride film having high tensile stress may be formed by depositing the silicon nitride film in the presence of a porogen. The deposited silicon nitride film may be exposed to at least one treatment selected from a plasma or ultraviolet radiation to liberate the porogen. The silicon nitride film may be densified such that a pore resulting from liberation of the porogen is reduced in size, and Si—N bonds in the silicon nitride film are strained to impart a tensile stress in the silicon nitride film. In another embodiment, tensile stress in a silicon nitride film may be enhanced by depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than about 400° C., and exposing the deposited silicon nitride film to ultraviolet radiation.
摘要翻译：沉积层（例如氮化硅层）中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。在一个实施例中，可以通过在致孔剂的存在下沉积氮化硅膜来形成具有高拉伸应力的氮化硅膜。沉积的氮化硅膜可以暴露于选自等离子体或紫外线辐射的至少一种处理以释放致孔剂。可以使氮化硅膜致密化，使致孔剂释放产生的孔尺寸减小，并且氮化硅膜中的Si-N键变形以在氮化硅膜中产生拉伸应力。在另一个实施例中，可以通过在低于约400℃的温度下在含氮等离子体的存在下沉积氮化硅膜来增强氮化硅膜中的拉伸应力，并将沉积的氮化硅膜暴露于紫外线辐射。

9. 发明申请

US20070153282A1 Method for measuring spectroscopic properties of bulk products and device for carrying out said method 有权
标题翻译：用于测量散装产品的光谱特性的方法和用于执行所述方法的装置
公开(公告)号：US20070153282A1
公开(公告)日：2007-07-05
申请号：US10597075
申请日：2004-11-18
申请人： Vladimir Zubkov , Vladimir Timofeev , Aleksandr Shamrai
发明人： Vladimir Zubkov , Vladimir Timofeev , Aleksandr Shamrai
IPC分类号： G01N21/00
CPC分类号： G01N21/85 , G01N21/0303 , G01N21/05 , G01N2021/5919 , G01N2021/8557 , G01N2021/8592
摘要： The invention relates to analytical instrument engineering, in particular to spectroscopy. The inventive method for measuring spectroscopic properties of bulk products consists in portionwisely supplying a sample in a measurement area. In order to fully fill said measurement area, several portions (at least two) are loaded and alternately placed substantially in different fields of the horizontal section of the measurement area in such a way that the uniformed distribution and the permanent density of the product in the area of measurement are provided. Afterwards, the spectroscopic properties of the sample are recorded in a standstill and the sample is removed from the area of measurement. The inventive device for measuring spectroscopic properties of bulk products comprises a feeding hopper, an input (receiving) opening, a batch loading unit which is provided with means for successively and uniformly distributing the product alternately in the different fields of the horizontal section of the area of measurement, a measuring unit, a unit for closing the area of measurement, an output (unloading) opening and a discharge hopper. Said invention makes it possible to ensure the high uniformity and permanent density of the product in the area of measurement during the measurement of the spectroscopic characteristics of the bulk products.
摘要翻译：本发明涉及分析仪器工程，特别涉及光谱学。用于测量散装产品的光谱特性的本发明的方法是在测量区域中分批供应样品。为了完全填充所述测量区域，几个部分（至少两个）被装载并且基本上放置在测量区域的水平部分的不同区域中，使得产品的均匀分布和永久密度在提供测量面积。然后，将样品的光谱性质记录在静止状态，并将样品从测量区域中取出。用于测量散装产品的光谱性质的本发明的装置包括进料斗，输入（接收）开口，批量装载单元，其设置有用于在该区域的水平部分的不同区域中交替地连续和均匀地分配产品的装置测量单元，用于关闭测量区域的单元，输出（卸载）开口和排出料斗。本发明使得在测量散装产品的光谱特性时，可以确保产品在测量领域的高均匀性和永久密度。

10. 发明申请

US20060269692A1 Method to increase the compressive stress of PECVD silicon nitride films 有权
标题翻译：增加PECVD氮化硅膜的压应力的方法
公开(公告)号：US20060269692A1
公开(公告)日：2006-11-30
申请号：US11398146
申请日：2006-04-05
申请人： Mihaela Balseanu , Li-Qun Xia , Vladimir Zubkov , Mei-Yee Shek , Isabelita Roflox , Hichem M'Saad
发明人： Mihaela Balseanu , Li-Qun Xia , Vladimir Zubkov , Mei-Yee Shek , Isabelita Roflox , Hichem M'Saad
IPC分类号： H05H1/24 , B05D3/00
CPC分类号： C23C16/345 , C23C16/0245 , C23C16/0272 , C23C16/56 , H01L21/3185
摘要： Compressive stress in a film of a semiconductor device may be controlled utilizing one or more techniques, employed alone or in combination. A first set of embodiments increase silicon nitride compressive stress by adding hydrogen to the deposition chemistry, and reduce defects in a device fabricated with a high compressive stress silicon nitride film formed in the presence of hydrogen gas. A silicon nitride film may comprise an initiation layer formed in the absence of a hydrogen gas flow, underlying a high stress nitride layer formed in the presence of a hydrogen gas flow. A silicon nitride film formed in accordance with an embodiment of the present invention may exhibit a compressive stress of 2.8 GPa or higher.
摘要翻译：半导体器件的膜中的压缩应力可以利用单独使用或组合使用的一种或多种技术来控制。第一组实施例通过向沉积化学品加入氢而增加氮化硅压缩应力，并且减少在氢气存在下形成的高压缩应力氮化硅膜制造的器件中的缺陷。氮化硅膜可以包括在不存在氢气流的情况下形成的起始层，位于在氢气流的存在下形成的高应力氮化物层的下面。根据本发明的实施方案形成的氮化硅膜可以表现出2.8GPa或更高的压缩应力。

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