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1. 发明授权

US08399891B2 Active device array substrate and method for fabricating the same 有权
标题翻译：有源器件阵列衬底及其制造方法
公开(公告)号：US08399891B2
公开(公告)日：2013-03-19
申请号：US12943933
申请日：2010-11-11
申请人： Po-Lin Lai , Ying-Fa Huang , Chun-Ming Yang , Wen-Bin Wu , Wen-Yi Lin
发明人： Po-Lin Lai , Ying-Fa Huang , Chun-Ming Yang , Wen-Bin Wu , Wen-Yi Lin
IPC分类号： H01L29/72
CPC分类号： H01L22/20 , H01L22/14
摘要： An active device array substrate and a fabricating method thereof are provided. A first patterned conductive layer including separated scan line patterns is formed on a substrate. Each scan line pattern includes a first and second scan lines adjacent to each other. Both the first and the second scan lines have first and second contacts. An open inspection on the scan line patterns is performed. Channel layers are formed on the substrate. A second patterned conductive layer including data lines interlaced with the first and second scan lines, sources and drains located above the channel layers, and connectors is formed on the substrate. The sources electrically connect the data lines correspondingly. At least one of the connectors electrically connects the first and second scan lines, so as to form a loop in each scan line pattern. Pixel electrodes electrically connected to the drains are formed.
摘要翻译：提供一种有源器件阵列衬底及其制造方法。在衬底上形成包括分离的扫描线图案的第一图案化导电层。每个扫描线图案包括彼此相邻的第一和第二扫描线。第一和第二扫描线都具有第一和第二触点。执行对扫描线图案的公开检查。沟道层形成在衬底上。包括与第一和第二扫描线隔开的数据线，位于沟道层上方的源极和漏极以及连接器的第二图案化导电层形成在衬底上。电源相应地电连接数据线。至少一个连接器电连接第一和第二扫描线，以便在每个扫描线图案中形成环。形成与漏极电连接的像素电极。

2. 发明申请

US20120043558A1 ACTIVE DEVICE ARRAY SUBSTRATE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：主动装置阵列基板及其制造方法
公开(公告)号：US20120043558A1
公开(公告)日：2012-02-23
申请号：US12943933
申请日：2010-11-11
申请人： Po-Lin Lai , Ying-Fa Huang , Chun-Ming Yang , Wen-Bin Wu , Wen-Yi Lin
发明人： Po-Lin Lai , Ying-Fa Huang , Chun-Ming Yang , Wen-Bin Wu , Wen-Yi Lin
IPC分类号： H01L27/15 , H01L21/66
CPC分类号： H01L22/20 , H01L22/14
摘要： An active device array substrate and a fabricating method thereof are provided. A first patterned conductive layer including separated scan line patterns is formed on a substrate. Each scan line pattern includes a first and second scan lines adjacent to each other. Both the first and the second scan lines have first and second contacts. An open inspection on the scan line patterns is performed. Channel layers are formed on the substrate. A second patterned conductive layer including data lines interlaced with the first and second scan lines, sources and drains located above the channel layers, and connectors is formed on the substrate. The sources electrically connect the data lines correspondingly. At least one of the connectors electrically connects the first and second scan lines, so as to form a loop in each scan line pattern. Pixel electrodes electrically connected to the drains are formed.
摘要翻译：提供一种有源器件阵列衬底及其制造方法。在衬底上形成包括分离的扫描线图案的第一图案化导电层。每个扫描线图案包括彼此相邻的第一和第二扫描线。第一和第二扫描线都具有第一和第二触点。执行对扫描线图案的公开检查。沟道层形成在衬底上。包括与第一和第二扫描线隔开的数据线，位于沟道层上方的源极和漏极以及连接器的第二图案化导电层形成在衬底上。电源相应地电连接数据线。至少一个连接器电连接第一和第二扫描线，以便在每个扫描线图案中形成环。形成与漏极电连接的像素电极。

3. 发明申请

US20080251933A1 METAL INTERCONNECT STRUCTURE 审中-公开
标题翻译：金属互连结构
公开(公告)号：US20080251933A1
公开(公告)日：2008-10-16
申请号：US11845746
申请日：2007-08-27
申请人： Kuo-Yao Cho , Wen-Bin Wu , Chiang-Lin Shih , Chia-Cheng Lin
发明人： Kuo-Yao Cho , Wen-Bin Wu , Chiang-Lin Shih , Chia-Cheng Lin
IPC分类号： H01L23/525 , H01L23/52
CPC分类号： H01L23/528 , H01L27/10891 , H01L2924/0002 , H01L2924/0001 , H01L2924/00
摘要： A metal interconnect structure includes a plurality of first plugs adjacent to each other, a first metal line extending in a first direction and contacting each first plug to form a first section with a tapered second section in between, and a second plug adjacent to the second section, both in a second direction normal to the first direction.
摘要翻译：金属互连结构包括彼此相邻的多个第一插塞，第一金属线在第一方向上延伸并接触每个第一插塞以形成第一部分，第一部分之间具有锥形第二部分，第二插头与第二插头相邻在第一方向垂直的第二方向上。

4. 发明申请

US20080032205A1 Overlay mark 有权
标题翻译：叠加标记
公开(公告)号：US20080032205A1
公开(公告)日：2008-02-07
申请号：US11513288
申请日：2006-08-31
申请人： Chui-fu Chiu , Wen-Bin Wu
发明人： Chui-fu Chiu , Wen-Bin Wu
IPC分类号： G03F1/00 , G03F9/00 , G03C5/00 , H01L23/544
CPC分类号： G03F7/70633
摘要： An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein each pattern configuration has at least two different pattern elements allowing other pattern elements be chosen to align when any one of the pattern elements on the substrate was damaged during process.
摘要翻译：形成在光掩模上的覆盖标记，包括第一矩形区域，第二矩形区域，第三矩形区域和第四矩形区域，每个矩形区域具有相同的图案构造，第一矩形区域的长边和较长的所述第三矩形区域的一侧彼此平行，并且所述第二矩形区域的长边和所述第四矩形区域的长边彼此平行，所述第一矩形区域的长边垂直于所述长边的第二矩形区域; 其中每个图案配置具有至少两个不同的图案元件，当在处理期间衬底上的任何一个图案元件被损坏时，允许其它图案元件被选择以对准。

5. 发明授权

US07304323B2 Test mask structure 有权
标题翻译：测试面罩结构
公开(公告)号：US07304323B2
公开(公告)日：2007-12-04
申请号：US10732370
申请日：2003-12-11
申请人： Wen-Bin Wu
发明人： Wen-Bin Wu
IPC分类号： H01L23/58 , H01L29/10
CPC分类号： H01L22/12 , G03F1/44 , G03F7/70625
摘要： Disclosed is a test mask structure. The test mask structure of the present invention comprises at least an array pattern region, in a certain proportion to the final product, having a first pattern density according to the certain proportion; and at least one test mask pattern region having a second pattern density. In the test mask structure of the present invention, the required pattern density is obtained by adjusting the area of the array pattern region and the area of the test mask pattern region according to the first pattern density and the second pattern density.
摘要翻译：公开了一种测试掩模结构。本发明的测试掩模结构至少包括与最终产品一定比例的阵列图案区域，其具有按照一定比例的第一图案密度; 以及具有第二图案密度的至少一个测试掩模图案区域。在本发明的测试掩模结构中，通过根据第一图案密度和第二图案密度调整阵列图案区域的面积和测试掩模图案区域的面积来获得所需的图案密度。

6. 发明授权

US06929902B2 Method of preventing repeated collapse in a reworked photoresist layer 有权
标题翻译：防止再加工光致抗蚀剂层中重复塌陷的方法
公开(公告)号：US06929902B2
公开(公告)日：2005-08-16
申请号：US10370441
申请日：2003-02-20
申请人： Yuan-Hsun Wu , Teng-Yen Huang , Wen-Bin Wu , Yi-Nan Chen
发明人： Yuan-Hsun Wu , Teng-Yen Huang , Wen-Bin Wu , Yi-Nan Chen
IPC分类号： G03F7/42 , H01L21/027 , H01L21/311 , G03F7/36
CPC分类号： G03F7/427 , H01L21/0276 , H01L21/31138
摘要： A method of preventing repeated collapse in a reworked photoresist layer. First, oxygen-containing plasma is applied to remove a collapsed photoresist. Because the plasma containing oxygen reacts with a bottom anti-reflect layer comprising SiOxNy, some acids are produced on the bottom anti-reflect layer, resulting in undercutting in a subsequently reworked photoresist. Next, an alkaline solution treatment is performed on the anti-reflect layer after the collapsed photoresist layer is removed. Finally, the reworked photoresist with is formed on the anti-reflect layer, without undercutting.
摘要翻译：防止再加工的光致抗蚀剂层中的重复塌陷的方法。首先，施加含氧等离子体以除去塌陷的光致抗蚀剂。因为含有氧的等离子体与包含SiO x N y Y y的底部防反射层反应，所以在底部防反射层上产生一些酸，导致在随后再加工光致抗蚀剂。接下来，在去除塌陷的光致抗蚀剂层之后，在抗反射层上进行碱性溶液处理。最后，在反射层上形成返工光致抗蚀剂，而没有底切。

7. 发明授权

US06742367B2 Inside locking device of flat handle lock 有权
标题翻译：防止外部手柄强行转动
公开(公告)号：US06742367B2
公开(公告)日：2004-06-01
申请号：US10222885
申请日：2002-08-19
申请人： Wen bin Wu
发明人： Wen bin Wu
IPC分类号： B60R2502
CPC分类号： E05B13/101 , Y10T70/5416 , Y10T70/5827 , Y10T70/5832 , Y10T292/57
摘要： A lock. The lock includes an inner handle assembly, a latch bolt, and an outer handle assembly. The outer handle assembly includes an outer handle, an outer spindle, an actuating sleeve rotatably mounted in the outer spindle and having two guide slots each having an inclined section and a horizontal section, a locking plate mounted in the actuating sleeve and including two wings, and an unlatching member operably connected to the latch bolt. Each wing is extended through an associated guide slot into an associated positioning slot in the outer spindle. When the lock is in an unlocked state, the unlatching member is engaged with the locking plate to allow joint rotation. When the lock is in a locked state, the unlatching member is disengaged from the unlatching member such that the unlatching member is not turned when the outer handle is turned.
摘要翻译：一个锁该锁包括内部把手组件，闩锁螺栓和外部手柄组件。外手柄组件包括外手柄，外心轴，可旋转地安装在外心轴中的致动套筒，具有分别具有倾斜部分和水平部分的两个引导槽，安装在致动套筒中并包括两个翼部的锁定板，以及可操作地连接到所述闩锁螺栓的解锁构件。每个机翼通过相关联的引导槽延伸到外主轴中的相关联的定位槽中。当锁处于解锁状态时，解锁构件与锁定板接合以允许接合旋转。当锁处于锁定状态时，解锁构件与解锁构件脱离接合，使得解锁构件在外手柄转动时不转动。

8. 发明授权

US07915133B2 Method of forming a trench capacitor 有权
标题翻译：形成沟槽电容器的方法
公开(公告)号：US07915133B2
公开(公告)日：2011-03-29
申请号：US11953481
申请日：2007-12-10
申请人： Kuo-Yao Cho , Wen-Bin Wu , Chiang-Lin Shih , Jen-Jui Huang
发明人： Kuo-Yao Cho , Wen-Bin Wu , Chiang-Lin Shih , Jen-Jui Huang
IPC分类号： H01L21/20
CPC分类号： H01L29/945 , H01L29/66181
摘要： A method of forming a ring-type capacitor is provided. The method includes providing a substrate; forming a patterned mask layer on the substrate, the patterned mask layer defining a ring pattern; removing the substrate by using the patterned mask layer as a mask to form a ring-type trench in the substrate; the ring-type trench including an inner wall and an outer wall; and forming a capacitor structure on the inner wall and the outer wall of the ring-type trench.
摘要翻译：提供一种形成环型电容器的方法。该方法包括提供基板; 在所述衬底上形成图案化掩模层，所述图案化掩模层限定环形图案; 通过使用图案化掩模层作为掩模去除衬底，以在衬底中形成环型沟槽; 所述环形沟槽包括内壁和外壁; 并在环形沟槽的内壁和外壁上形成电容器结构。

9. 发明授权

US07480892B2 Overlay mark 有权
标题翻译：叠加标记
公开(公告)号：US07480892B2
公开(公告)日：2009-01-20
申请号：US11513196
申请日：2006-08-31
申请人： Chui-fu Chiu , Wen-Bin Wu
发明人： Chui-fu Chiu , Wen-Bin Wu
IPC分类号： G06F17/50
CPC分类号： G03F9/7076 , G03F1/42 , G03F7/70633 , G03F7/70683
摘要： An overlay mark formed on a photomask, comprising a first rectangular region, a second rectangular region, a third rectangular region, and a fourth rectangular region, each rectangular region having the same pattern configuration, a longer side of the first rectangular region and a longer side of the third rectangular region being parallel to each other, and the first and third rectangular regions have the same first pattern configuration having a first pattern element, a longer side of the second rectangular region and a longer side of the fourth rectangular region being parallel to each other, and the second and fourth rectangular regions have the same second pattern configuration having a second pattern element, the longer side of the first rectangular region being perpendicular to the longer side of the second rectangular region; wherein, the first pattern element is different from the second pattern element for allowing the second pattern configuration be chosen to align when the first pattern configuration on the substrate was damaged during process.
摘要翻译：形成在光掩模上的覆盖标记，包括第一矩形区域，第二矩形区域，第三矩形区域和第四矩形区域，每个矩形区域具有相同的图案构造，第一矩形区域的长边和较长的所述第一矩形区域和所述第三矩形区域具有相同的第一图案构造，所述第一图案构造具有第一图案元素，所述第二矩形区域的长边和所述第四矩形区域的长边平行并且第二和第四矩形区域具有相同的具有第二图案元素的第二图案构造，第一矩形区域的长边与第二矩形区域的长边垂直; 其中，所述第一图案元件与所述第二图案元件不同，用于当所述基板上的所述第一图案配置在处理期间被损坏时，所述第二图案构造被选择为对齐。

10. 发明申请

US20080286934A1 METHOD OF FORMING A TRENCH CAPACITOR 有权
标题翻译：形成TRENCH电容器的方法
公开(公告)号：US20080286934A1
公开(公告)日：2008-11-20
申请号：US11953481
申请日：2007-12-10
申请人： Kuo-Yao CHO , Wen-Bin WU , Chiang-Lin SHIH , Jen-Jui HUANG
发明人： Kuo-Yao CHO , Wen-Bin WU , Chiang-Lin SHIH , Jen-Jui HUANG
IPC分类号： H01L21/02
CPC分类号： H01L29/945 , H01L29/66181
摘要： A method of forming a ring-type capacitor is provided. The method includes providing a substrate; forming a patterned mask layer on the substrate, the patterned mask layer defining a ring pattern; removing the substrate by using the patterned mask layer as a mask to form a ring-type trench in the substrate; the ring-type trench including an inner wall and an outer wall; and forming a capacitor structure on the inner wall and the outer wall of the ring-type trench.
摘要翻译：提供一种形成环型电容器的方法。该方法包括提供基板; 在所述衬底上形成图案化掩模层，所述图案化掩模层限定环形图案; 通过使用图案化掩模层作为掩模去除衬底，以在衬底中形成环型沟槽; 所述环形沟槽包括内壁和外壁; 并在环形沟槽的内壁和外壁上形成电容器结构。

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