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1. 发明授权

US07297631B2 Methods of forming electronic structures including conductive shunt layers and related structures 有权
标题翻译：形成包括导电分流层和相关结构的电子结构的方法
公开(公告)号：US07297631B2
公开(公告)日：2007-11-20
申请号：US11226569
申请日：2005-09-14
申请人： Krishna K. Nair , Glenn A. Rinne , William E. Batchelor
发明人： Krishna K. Nair , Glenn A. Rinne , William E. Batchelor
IPC分类号： H01L21/44
CPC分类号： H01L23/528 , H01L21/2885 , H01L24/02 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/0235 , H01L2224/02351 , H01L2224/0347 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05022 , H01L2224/05572 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/13022 , H01L2224/131 , H01L2224/16 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01057 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15787 , H01L2224/13099 , H01L2924/00
摘要： Methods of forming an electronic structure may include forming a seed layer on an electronic substrate, and forming a conductive shunt layer on portions of the seed layer wherein portions of the seed layer are free of the conductive shunt layer. A conductive barrier layer may be formed on the conductive shunt layer opposite the seed layer wherein the conductive shunt layer comprises a first material and wherein the barrier layer comprises a second material different than the first material. Moreover, a solder layer may be formed on the barrier layer opposite the conductive shunt layer wherein the solder layer comprises a third material different than the first and second materials. Related structures are also discussed.
摘要翻译：形成电子结构的方法可以包括在电子衬底上形成种子层，以及在种子层的部分上形成导电分流层，其中种子层的部分没有导电分流层。导电阻挡层可以形成在与种子层相对的导电分流层上，其中导电分流层包括第一材料，并且其中阻挡层包括不同于第一材料的第二材料。此外，可以在与导电分流层相对的阻挡层上形成焊料层，其中焊料层包括不同于第一和第二材料的第三材料。还讨论了相关结构。

2. 发明授权

US06960828B2 Electronic structures including conductive shunt layers 有权
标题翻译：电子结构包括导电分流层
公开(公告)号：US06960828B2
公开(公告)日：2005-11-01
申请号：US10601938
申请日：2003-06-23
申请人： Krishna K. Nair , Glenn A. Rinne , William E. Batchelor
发明人： Krishna K. Nair , Glenn A. Rinne , William E. Batchelor
IPC分类号： H01L21/288 , H01L21/60 , H01L23/485 , H01L23/528 , H01L23/48
CPC分类号： H01L23/528 , H01L21/2885 , H01L24/02 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/0235 , H01L2224/02351 , H01L2224/0347 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05022 , H01L2224/05572 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/13022 , H01L2224/131 , H01L2224/16 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01057 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15787 , H01L2224/13099 , H01L2924/00
摘要： Methods of forming an electronic structure may include forming a seed layer on an electronic substrate, and forming a conductive shunt layer on portions of the seed layer wherein portions of the seed layer are free of the conductive shunt layer. A conductive barrier layer may be formed on the conductive shunt layer opposite the seed layer wherein the conductive shunt layer comprises a first material and wherein the barrier layer comprises a second material different than the first material. Moreover, a solder layer may be formed on the barrier layer opposite the conductive shunt layer wherein the solder layer comprises a third material different than the first and second materials. Related structures are also discussed.
摘要翻译：形成电子结构的方法可以包括在电子衬底上形成种子层，以及在种子层的部分上形成导电分流层，其中种子层的部分没有导电分流层。导电阻挡层可以形成在与种子层相对的导电分流层上，其中导电分流层包括第一材料，并且其中阻挡层包括不同于第一材料的第二材料。此外，可以在与导电分流层相对的阻挡层上形成焊料层，其中焊料层包括不同于第一和第二材料的第三材料。还讨论了相关结构。

3. 发明授权

US08294269B2 Electronic structures including conductive layers comprising copper and having a thickness of at least 0.5 micrometers 有权
标题翻译：电子结构包括包含铜并具有至少0.5微米厚度的导电层
公开(公告)号：US08294269B2
公开(公告)日：2012-10-23
申请号：US12963005
申请日：2010-12-08
申请人： Krishna K. Nair , Glenn A. Rinne , William E. Batchelor
发明人： Krishna K. Nair , Glenn A. Rinne , William E. Batchelor
IPC分类号： H01L23/48
CPC分类号： H01L23/528 , H01L21/2885 , H01L24/02 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/0235 , H01L2224/02351 , H01L2224/0347 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05022 , H01L2224/05572 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/13022 , H01L2224/131 , H01L2224/16 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01057 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15787 , H01L2224/13099 , H01L2924/00
摘要： An electronic structure may include a conductive pad on a substrate, and an insulating layer on the substrate and on the conductive pad. The insulating layer may have a via therein so that a portion of the conductive pad opposite the substrate is free of the insulating layer. A conductive layer comprising copper may be on the portion of the conductive pad free of the insulating layer, on sidewalls of the via, and on surface portions of the insulating layer surrounding the via opposite the substrate and the conductive pad, and the conductive layer comprising copper may have a thickness of at least approximately 1.0 μm. A conductive barrier layer may be on the conductive layer comprising copper, and the conductive barrier layer may include at least one of nickel, platinum, palladium, and/or combinations thereof. A solder layer may be on the conductive barrier layer, the conductive layer comprising copper and the solder layer may comprise different materials, and the conductive barrier layer may be between the conductive layer comprising copper and the solder layer.
摘要翻译：电子结构可以包括在衬底上的导电焊盘，以及在衬底上和导电焊盘上的绝缘层。绝缘层可以具有其中的通孔，使得与衬底相对的导电焊盘的一部分没有绝缘层。包含铜的导电层可以在导电焊盘的不具有绝缘层的部分上，在通孔的侧壁上，以及绝缘层的围绕与衬底和导电焊盘相对的通孔的表面部分上，并且导电层包括铜可以具有至少约1.0μm的厚度。导电阻挡层可以在包含铜的导电层上，并且导电阻挡层可以包括镍，铂，钯和/或其组合中的至少一种。焊料层可以在导电阻挡层上，包含铜和焊料层的导电层可以包括不同的材料，并且导电阻挡层可以在包含铜和焊料层的导电层之间。

4. 发明申请

US20110084392A1 Electronic Structures Including Conductive Layers Comprising Copper and Having a Thickness of at Least 0.5 Micrometers 有权
标题翻译：电子结构包括包含铜并具有至少0.5千分尺的厚度的导电层
公开(公告)号：US20110084392A1
公开(公告)日：2011-04-14
申请号：US12963005
申请日：2010-12-08
申请人： Krishna K. Nair , Glenn A. Rinne , William E. Batchelor
发明人： Krishna K. Nair , Glenn A. Rinne , William E. Batchelor
IPC分类号： H01L23/498
CPC分类号： H01L23/528 , H01L21/2885 , H01L24/02 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/0235 , H01L2224/02351 , H01L2224/0347 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05022 , H01L2224/05572 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/13022 , H01L2224/131 , H01L2224/16 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01057 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15787 , H01L2224/13099 , H01L2924/00
摘要： An electronic structure may include a conductive pad on a substrate, and an insulating layer on the substrate and on the conductive pad. The insulating layer may have a via therein so that a portion of the conductive pad opposite the substrate is free of the insulating layer. A conductive layer comprising copper may be on the portion of the conductive pad free of the insulating layer, on sidewalls of the via, and on surface portions of the insulating layer surrounding the via opposite the substrate and the conductive pad, and the conductive layer comprising copper may have a thickness of at least approximately 1.0 μm. A conductive barrier layer may be on the conductive layer comprising copper, and the conductive barrier layer may include at least one of nickel, platinum, palladium, and/or combinations thereof. A solder layer may be on the conductive barrier layer, the conductive layer comprising copper and the solder layer may comprise different materials, and the conductive barrier layer may be between the conductive layer comprising copper and the solder layer.
摘要翻译：电子结构可以包括在衬底上的导电焊盘，以及在衬底上和导电焊盘上的绝缘层。绝缘层可以具有其中的通孔，使得与衬底相对的导电焊盘的一部分没有绝缘层。包含铜的导电层可以在导电焊盘的不具有绝缘层的部分上，在通孔的侧壁上，以及绝缘层的围绕与衬底和导电焊盘相对的通孔的表面部分上，并且导电层包括铜可以具有至少约1.0μm的厚度。导电阻挡层可以在包含铜的导电层上，并且导电阻挡层可以包括镍，铂，钯和/或其组合中的至少一种。焊料层可以在导电阻挡层上，包含铜和焊料层的导电层可以包括不同的材料，并且导电阻挡层可以在包含铜和焊料层的导电层之间。

5. 发明授权

US07879715B2 Methods of forming electronic structures including conductive shunt layers and related structures 有权
标题翻译：形成包括导电分流层和相关结构的电子结构的方法
公开(公告)号：US07879715B2
公开(公告)日：2011-02-01
申请号：US11868785
申请日：2007-10-08
申请人： Krishna K. Nair , Glenn A. Rinne , William E. Batchelor
发明人： Krishna K. Nair , Glenn A. Rinne , William E. Batchelor
IPC分类号： H01L21/44
CPC分类号： H01L23/528 , H01L21/2885 , H01L24/02 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/0235 , H01L2224/02351 , H01L2224/0347 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05022 , H01L2224/05572 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/13022 , H01L2224/131 , H01L2224/16 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01057 , H01L2924/01061 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15787 , H01L2224/13099 , H01L2924/00
摘要： Methods of forming an electronic structure may include forming a seed layer on an electronic substrate, and forming a conductive shunt layer on portions of the seed layer wherein portions of the seed layer are free of the conductive shunt layer. A conductive barrier layer may be formed on the conductive shunt layer opposite the seed layer wherein the conductive shunt layer comprises a first material and wherein the barrier layer comprises a second material different than the first material. Moreover, a solder layer may be formed on the barrier layer opposite the conductive shunt layer wherein the solder layer comprises a third material different than the first and second materials. Related structures are also discussed.
摘要翻译：形成电子结构的方法可以包括在电子衬底上形成种子层，以及在种子层的部分上形成导电分流层，其中种子层的部分没有导电分流层。导电阻挡层可以形成在与种子层相对的导电分流层上，其中导电分流层包括第一材料，并且其中阻挡层包括不同于第一材料的第二材料。此外，可以在与导电分流层相对的阻挡层上形成焊料层，其中焊料层包括不同于第一和第二材料的第三材料。还讨论了相关结构。

6. 发明授权

US07531898B2 Non-Circular via holes for bumping pads and related structures 有权
标题翻译：用于碰撞垫和相关结构的非圆形通孔
公开(公告)号：US07531898B2
公开(公告)日：2009-05-12
申请号：US11270366
申请日：2005-11-09
申请人： William E. Batchelor , Glenn A. Rinne
发明人： William E. Batchelor , Glenn A. Rinne
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/02 , H01L24/13 , H01L24/14 , H01L2224/0401 , H01L2224/13099 , H01L2224/1411 , H01L2224/14133 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/15787 , H01L2924/00
摘要： An integrated circuit device may include a substrate, a conductive pad on a surface of the substrate, and a conductive line on the surface of the substrate. Moreover, the conductive line may be connected to the conductive pad, and the conductive line may be narrow relative to the conductive pad. In addition, an insulating layer may be provided on the substrate, on the conductive line, and on edge portions of the conductive pad. The insulating layer may have a hole therein exposing a central portion of the conductive pad, and a first segment of a perimeter of the hole may substantially define an arc of a circle around the central portion of the conductive pad. A second segment of the perimeter of the hole may substantially deviate from the circle around the central portion of the conductive pad, and the second segment of the perimeter of the hole may be adjacent a connection between the conductive line and the conductive pad.
摘要翻译：集成电路器件可以包括衬底，在衬底的表面上的导电焊盘，以及衬底的表面上的导电线。此外，导电线可以连接到导电焊盘，并且导电线可以相对于导电焊盘窄。此外，绝缘层可以设置在基板上，导电线上以及导电焊盘的边缘部分上。绝缘层可以在其中具有暴露导电焊盘的中心部分的孔，并且孔的周边的第一部分可以基本上围绕导电焊盘的中心部分限定圆弧。孔的周边的第二段可能基本上偏离导电焊盘的中心部分周围的圆，并且孔的周边的第二段可以与导电线和导电焊盘之间的连接相邻。

7. 发明授权

US06388628B1 Systems and methods for wirelessly projecting power using in-phase current loops 失效
标题翻译：使用同相电流环路无线投射电源的系统和方法
公开(公告)号：US06388628B1
公开(公告)日：2002-05-14
申请号：US09312577
申请日：1999-05-14
申请人： Wayne D. Dettloff , William E. Batchelor , Robert A. Heaton , Michael B. Steer
发明人： Wayne D. Dettloff , William E. Batchelor , Robert A. Heaton , Michael B. Steer
IPC分类号： H01Q1112
CPC分类号： G06K7/10346 , G06K7/0008 , G06K7/10039 , G06K7/10316 , G06K7/10336 , H01Q7/00
摘要： An array of in-phase current loops are disposed adjacent to one another to define a surface and to define a virtual current loop at a periphery of the surface that produces a same direction virtual current while current in adjacent portions of adjacent current loops flows in opposite directions, to thereby wirelessly project power from the surface. It has been found according to the invention that the array of in-phase current loops that are disposed adjacent to one another to define a surface and to define a virtual current loop at a periphery of the surface that produces a same direction virtual current while current in adjacent portions of adjacent current loops flows in opposite directions, can provide acceptable power to RFID tags, while reducing the risk of violating regulatory constraints. A plurality of arrays of in-phase current loops also may be provided. The multiple arrays of in-phase current loops are disposed adjacent to one another to define a surface. Each array of in-phase current loops may be configured as was described above. N-ary tree traversals, push and pop commands and/or warp commands also may be used to efficiently identify tags.
摘要翻译：一组同相电流回路彼此相邻地设置以限定表面并且在表面的外围限定出产生相同方向虚拟电流的虚拟电流回路，同时相邻电流回路的相邻部分中的电流相反地流动方向，从而无线地投射表面的电力。根据本发明已经发现，相邻电流回路阵列彼此相邻设置以限定表面并且在表面的周边处限定出虚拟电流回路，该电流回路产生相同方向的虚拟电流同时电流在相邻电流环路的相邻部分沿相反方向流动，可以为RFID标签提供可接受的功率，同时降低违反监管限制的风险。还可以提供多个同相电流回路阵列。多个同相电流环阵列彼此相邻设置以限定一个表面。每个阵列的同相电流回路可以如上所述地配置。可以使用N元树遍历，推和命令命令和/或warp命令来有效地识别标签。

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