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1. 发明申请

US20190222281A1 SIGNALING FOR RESOURCE ALLOCATION AND SCHEDULING IN 5G-NR INTEGRATED ACCESS AND BACKHAUL 审中-公开
公开(公告)号：US20190222281A1
公开(公告)日：2019-07-18
申请号：US16189157
申请日：2018-11-13
申请人： Alexander Sirotkin , Alexei Davydov , Andrey Chervyakov , Anthony Lee , Avik Sengupta , Bharat Shrestha , Candy Yiu , Chang Hong Shan , Dae Won Lee , Dawei Ying , Debdeep Chatterjee , Farid Adrangi , Gang Xiong , Geng Wu , Gregory Morozov , Hassan Ghozlan , Hong He , Honglei Miao , Hua Li , Jaemin Han , Jeongho Jeon , Jie Cui , Jing Zhu , Joey Chou , Joonbeom Kim , Joonyoung Cho , Kathiravetpillai Sivanesan , Lu Lu , May Wu , Naveen Palle , Puneet Jain , Qian Li , Richard C. Burbidge , Robert Zaus , Rui Huang , Satish Chandra Jha , Seau S. Lim , Sergey Panteleev , Song Noh , Yaser M. Fouad , Yi Guo , Yizhi Yao , Yongjun Kwak , Youn Hyoung Heo , Yuhan Zhou , Yujian Zhang , Yushu Zhang
发明人： Alexander Sirotkin , Alexei Davydov , Andrey Chervyakov , Anthony Lee , Avik Sengupta , Bharat Shrestha , Candy Yiu , Chang Hong Shan , Dae Won Lee , Dawei Ying , Debdeep Chatterjee , Farid Adrangi , Gang Xiong , Geng Wu , Gregory Morozov , Hassan Ghozlan , Hong He , Honglei Miao , Hua Li , Jaemin Han , Jeongho Jeon , Jie Cui , Jing Zhu , Joey Chou , Joonbeom Kim , Joonyoung Cho , Kathiravetpillai Sivanesan , Lu Lu , May Wu , Naveen Palle , Puneet Jain , Qian Li , Richard C. Burbidge , Robert Zaus , Rui Huang , Satish Chandra Jha , Seau S. Lim , Sergey Panteleev , Song Noh , Yaser M. Fouad , Yi Guo , Yizhi Yao , Yongjun Kwak , Youn Hyoung Heo , Yuhan Zhou , Yujian Zhang , Yushu Zhang
IPC分类号： H04B7/06 , H04L1/00 , H04W76/27 , H04W72/12
摘要： Embodiments of apparatus and methods for signaling for resource allocation and scheduling in 5G-NR integrated access and backhaul are generally described herein. In some embodiments, User Equipment configured for reporting a channel quality indicator (CQI) index in a channel state information (CSI) reference resource assumes a physical resource block (PRB) bundling size of two PRBs to derive the CQI index.

2. 发明申请

US20190174576A1 METHODS TO INDICATE A VERSION OF PACKET DATA CONVERGENCE PROTOCOL (PDCP) IN DUAL CONNECTIVITY ARRANGEMENTS 审中-公开
公开(公告)号：US20190174576A1
公开(公告)日：2019-06-06
申请号：US16273728
申请日：2019-02-12
申请人： Sudeep K. Palat , Seau S. Lim , Yi Guo
发明人： Sudeep K. Palat , Seau S. Lim , Yi Guo
IPC分类号： H04W88/02 , H04W88/06 , H04W80/08 , H04W76/27 , H04W76/11
摘要： Embodiments of a User Equipment (UE), Evolved Node-B (eNB) and methods of communication are generally described herein. The UE may receive a SystemInformationBlockType1 from an eNB. The UE may determine that the eNB supports Fifth Generation Core (5GC) operation if the SystemInformationBlockType1 message includes a plmn-Identity-5GC-r15 parameter. The UE may transmit a radio resource control (RRC) connection request message to establish an RRC connection. If it is determined that the eNB supports 5GC operation, and if the UE supports 5GC operation, the UE may encode the RRC connection request message in accordance with a default new radio packet data convergence protocol (NR PDCP) configuration; and may use NR PDCP for one or more subsequent messages.

3. 发明授权

US08696774B2 Gasification system and method using fuel injectors 有权
标题翻译：使用燃油喷射器的气化系统和方法
公开(公告)号：US08696774B2
公开(公告)日：2014-04-15
申请号：US12684000
申请日：2010-01-07
申请人： Cliff Yi Guo
发明人： Cliff Yi Guo
IPC分类号： C10J1/207
CPC分类号： C10J3/721 , C10J3/506 , C10J2200/152 , Y02E20/16 , Y02E20/18
摘要： A system is provided that comprises a gasifier with an enclosure disposed about a chamber, wherein the enclosure comprises a top wall, a bottom wall, and a side wall between the top and bottom walls. The gasifier also comprises an outlet disposed in the bottom wall, a first injector disposed in the top wall, and a second injector disposed in the side wall, wherein the first and second injectors are configured to inject fuel, oxygen, or a combination thereof, into the chamber.
摘要翻译：提供了一种系统，其包括具有围绕室设置的封闭件的气化器，其中所述外壳包括顶壁，底壁和位于顶壁和底壁之间的侧壁。气化器还包括设置在底壁中的出口，设置在顶壁中的第一喷射器和设置在侧壁中的第二喷射器，其中第一和第二喷射器被配置为喷射燃料，氧气或其组合，进入房间

4. 发明授权

US08492277B2 Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride 有权
标题翻译：抛光包括多晶硅和至少一种氧化硅和氮化硅的衬底的方法
公开(公告)号：US08492277B2
公开(公告)日：2013-07-23
申请号：US12724721
申请日：2010-03-16
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： C03C15/00 , C03C25/68 , H01L21/302 , H01L21/461
CPC分类号： H01L21/31053 , C09G1/02
摘要： A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon and at least one of silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and an acyclic organosulfonic acid compound, wherein the acyclic organosulfonic acid compound has an acyclic hydrophobic portion having 6 to 30 carbon atoms and a nonionic acyclic hydrophilic portion having 10 to 300 carbon atoms; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the at least one of silicon oxide and silicon nitride is removed from the substrate.
摘要翻译：提供了一种用于基板的化学机械抛光的方法，包括：提供基板，其中所述基板包括多晶硅和氧化硅和氮化硅中的至少一种; 提供化学机械抛光组合物，其包含作为初始组分的水; 研磨剂和无环有机磺酸化合物，其中所述无环有机磺酸化合物具有6至30个碳原子的无环疏水部分和具有10至300个碳原子的非离子非环状亲水部分; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中所述多晶硅中的至少一些从所述衬底移除; 并且其中所述至少一种氧化硅和氮化硅中的至少一种从所述衬底去除。

5. 发明授权

US08482265B2 Current balance circuit utilizing multiplexers and triangular wave generators 有权
标题翻译：利用多路复用器和三角波发生器的电流平衡电路
公开(公告)号：US08482265B2
公开(公告)日：2013-07-09
申请号：US13244712
申请日：2011-09-26
申请人： Yi-Guo Chiu
发明人： Yi-Guo Chiu
IPC分类号： G05F1/56 , H03F3/45
CPC分类号： H02J1/10 , H02M3/1584 , H03K17/122 , H03K17/145
摘要： A current balance circuit includes a first branch and a second branch in parallel between a power supply unit and at least one load, which respectively include a switch. The current balance circuit detects and compares currents flowing through the first branch and the second branch. The current balance circuit also generates triangle waves and reversed triangle waves, compares voltage of a control pole of a first switch with the triangle waves, and compares voltage of the control pole of a second switch with the reversed triangle waves. Then the current balance circuit controls if the triangle waves and the reversed triangle waves are input to the first switch and the second switch according to the currents flowing through the first branch and the second branch to adjust impedance of the first switch and the second switch to balance the currents flowing through the first branch and the second branch.
摘要翻译：电流平衡电路包括并联在电源单元和至少一个负载之间的第一分支和第二分支，其分别包括开关。电流平衡电路检测并比较流过第一分支和第二分支的电流。电流平衡电路还产生三角波和反向三角波，将第一开关的控制极的电压与三角波进行比较，并将第二开关的控制极的电压与反向三角波进行比较。然后，当前平衡电路根据流经第一分支和第二分支的电流将三角波和反向三角波输入到第一开关和第二开关，以调节第一开关和第二开关的阻抗平衡流经第一分支和第二分支的电流。

6. 发明授权

US08435420B1 Method of polishing using tunable polishing formulation 有权
标题翻译：使用可调抛光配方抛光的方法
公开(公告)号：US08435420B1
公开(公告)日：2013-05-07
申请号：US13283013
申请日：2011-10-27
申请人： Yi Guo , Kancharla-Arun Kumar Reddy
发明人： Yi Guo , Kancharla-Arun Kumar Reddy
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： A process for chemical mechanical polishing of a substrate having a polysilicon overburden deposited over silicon nitride is provided using multiple dilutions of a chemical mechanical polishing composition concentrate to polish the substrate, wherein a first dilution of the concentrate used to polish the substrate is tuned to exhibit a first polysilicon removal rate and a first polysilicon to silicon nitride removal rate selectivity; and wherein a second dilution of the concentrate used to polish the substrate is tuned to exhibit a second polysilicon removal rate and a second polysilicon to silicon nitride removal rate selectivity.
摘要翻译：使用化学机械抛光组合物浓缩物的多次稀释来抛光衬底来提供具有沉积在氮化硅上的多晶硅覆盖层的衬底的化学机械抛光的方法，其中用于抛光衬底的浓缩物的第一稀释度被调谐到展现第一多晶硅去除速率和第一多晶硅与氮化硅的去除速率选择性; 并且其中调整用于抛光所述衬底的所述浓缩物的第二稀释度以显示第二多晶硅去除速率和第二多晶硅与氮化硅去除速率选择性。

7. 发明申请

US20130109182A1 Method Of Polishing Using Tunable Polishing Formulation 有权
标题翻译：使用可调式抛光配方的抛光方法
公开(公告)号：US20130109182A1
公开(公告)日：2013-05-02
申请号：US13283013
申请日：2011-10-27
申请人： Yi Guo , Kancharla-Arun Kumar Reddy
发明人： Yi Guo , Kancharla-Arun Kumar Reddy
IPC分类号： H01L21/306
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463
摘要： A process for chemical mechanical polishing of a substrate having a polysilicon overburden deposited over silicon nitride is provided using multiple dilutions of a chemical mechanical polishing composition concentrate to polish the substrate, wherein a first dilution of the concentrate used to polish the substrate is tuned to exhibit a first polysilicon removal rate and a first polysilicon to silicon nitride removal rate selectivity; and wherein a second dilution of the concentrate used to polish the substrate is tuned to exhibit a second polysilicon removal rate and a second polysilicon to silicon nitride removal rate selectivity.
摘要翻译：使用化学机械抛光组合物浓缩物的多次稀释来抛光衬底来提供具有沉积在氮化硅上的多晶硅覆盖层的衬底的化学机械抛光的方法，其中用于抛光衬底的浓缩物的第一稀释度被调谐到展现第一多晶硅去除速率和第一多晶硅与氮化硅的去除速率选择性; 并且其中调整用于抛光所述衬底的所述浓缩物的第二稀释度以显示第二多晶硅去除速率和第二多晶硅与氮化硅去除速率选择性。

8. 发明申请

US20130002214A1 CURRENT BALANCE CIRCUIT 有权
标题翻译：当前平衡电路
公开(公告)号：US20130002214A1
公开(公告)日：2013-01-03
申请号：US13244712
申请日：2011-09-26
申请人： YI-GUO CHIU
发明人： YI-GUO CHIU
IPC分类号： G05F1/10
CPC分类号： H02J1/10 , H02M3/1584 , H03K17/122 , H03K17/145
摘要： A current balance circuit includes a first branch and a second branch in parallel between a power supply unit and at least one load, which respectively include a switch. The current balance circuit detects and compares currents flowing through the first branch and the second branch. The current balance circuit also generates triangle waves and reversed triangle waves, compares voltage of a control pole of a first switch with the triangle waves, and compares voltage of the control pole of a second switch with the reversed triangle waves. Then the current balance circuit controls if the triangle waves and the reversed triangle waves are input to the first switch and the second switch according to the currents flowing through the first branch and the second branch to adjust impedance of the first switch and the second switch to balance the currents flowing through the first branch and the second branch.
摘要翻译：电流平衡电路包括并联在电源单元和至少一个负载之间的第一分支和第二分支，其分别包括开关。电流平衡电路检测并比较流过第一分支和第二分支的电流。电流平衡电路还产生三角波和反向三角波，将第一开关的控制极的电压与三角波进行比较，并将第二开关的控制极的电压与反向三角波进行比较。然后，当前平衡电路根据流经第一分支和第二分支的电流将三角波和反向三角波输入到第一开关和第二开关，以调节第一开关和第二开关的阻抗平衡流经第一分支和第二分支的电流。

9. 发明申请

US20120276742A1 Chemical Mechanical Polishing Composition and Method For Polishing Germanium-Antimony-Tellurium Alloys 有权
标题翻译：化学机械抛光组合物和抛光锗 - 锑 - 碲合金的方法
公开(公告)号：US20120276742A1
公开(公告)日：2012-11-01
申请号：US13096740
申请日：2011-04-28
申请人： Jaeseok Lee , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Jaeseok Lee , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： H01L21/306
CPC分类号： C09K3/1463 , C09G1/02 , H01L45/06 , H01L45/144 , H01L45/1683
摘要： A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition consisting essentially of, as initial components: water; an abrasive; a material selected from ethylene diamine tetra acetic acid and salts thereof; and an oxidizing agent; wherein the chemical mechanical polishing composition facilitates a high GST removal rate with low defectivity.
摘要翻译：一种使用化学机械抛光组合物进行化学机械抛光的方法，其包括锗 - 锑 - 碲硫族化物相变合金（GST），所述化学机械抛光组合物基本上由以下组分组成：初始组分：水; 研磨剂选自乙二胺四乙酸及其盐的材料; 和氧化剂; 其中化学机械抛光组合物有利于具有低缺陷性的高GST去除速率。

10. 发明申请

US20110244685A1 Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal 有权
标题翻译：用适于增强氧化硅去除的抛光组合物对衬底进行化学机械抛光的方法
公开(公告)号：US20110244685A1
公开(公告)日：2011-10-06
申请号：US12750799
申请日：2010-03-31
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： H01L21/306
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises silicon oxide; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and a substance according to formula I wherein R1, R2 and R3 are each independently selected from a C1-4 alky group; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein the substance according to formula I included in the chemical mechanical polishing composition provides an enhanced silicon oxide removal rate and an improved polishing defectivity performance; and, wherein at least some of the silicon oxide is removed from the substrate.
摘要翻译：提供了一种用于基板的化学机械抛光的方法，包括：提供基板，其中所述基板包括氧化硅; 提供化学机械抛光组合物，其包含作为初始组分的水; 研磨剂和根据式I的物质，其中R 1，R 2和R 3各自独立地选自C 1-4烷基; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中包括在化学机械抛光组合物中的根据式I的物质提供增强的氧化硅去除速率和改善的抛光缺陷性能; 并且其中所述氧化硅中的至少一些从所述衬底去除。

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