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1. 发明授权

US10666227B2 Tunable surface acoustic wave resonators and SAW filters with digital to analog converters 有权
公开(公告)号：US10666227B2
公开(公告)日：2020-05-26
申请号：US15998270
申请日：2018-07-27
申请人： Cindy X. Qiu , Ishiang Shih , Chunong Qiu , Julia Qiu , Andy Shih , Yi-Chi Shih
发明人： Cindy X. Qiu , Ishiang Shih , Chunong Qiu , Julia Qiu , Andy Shih , Yi-Chi Shih
IPC分类号： H03H9/64 , H03H9/02 , H03H9/145 , H03H9/25 , H01L41/107 , H03M1/66
摘要： Due to strong needs to reduce the dimensions and the cost of the RF filters and to reduce the number of filters required in an mobile handsets and wireless system covering numbers of operation bands, tunable RF filters which can cover as many bands or frequency ranges as possible are needed so that the number of filters can be reduced in the mobile handsets and wireless systems. The present invention provides tunable surface acoustic wave (SAW) IDT structures with the resonant frequency of the acoustic wave to be excited and to be transmitted tuned by digital to analog converters (DACs). The DAC converts an input digital signal to an output DC voltage and provide DC bias voltages to the SAW IDTs through integrated thin film biasing resistors. The polarity and the value of the output DC voltage are controlled by the input digital signal to achieve selection and tuning of the resonant frequency of the SAW IDTs.

2. 发明授权

US10312882B2 Tunable film bulk acoustic resonators and filters 有权
公开(公告)号：US10312882B2
公开(公告)日：2019-06-04
申请号：US14756018
申请日：2015-07-22
申请人： Cindy X. Qiu , Ishiang Shih , Chunong Qiu , Andy Shih , Julia Qiu , Yi-Chi Shih
发明人： Cindy X. Qiu , Ishiang Shih , Chunong Qiu , Andy Shih , Julia Qiu , Yi-Chi Shih
IPC分类号： H03H3/04 , H03H9/00 , H03H9/02 , H03H9/17 , H03H9/56 , H03H9/58 , H01P1/201
摘要： In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies, one for transmitting and the other for receiving. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The invention provides tunable film bulk acoustic resonators TFBARs containing semiconducting piezoelectric layers and methods for tuning and adjusting the resonant properties. When a DC biasing voltage is varied, both the depletion region thickness and neutral region thickness associated in the semiconducting piezoelectric layers varies leading to changes in equivalent capacitances, inductance and resistances and hence the resonance properties and frequencies. A plurality of the present TFBARs are connected into a tunable oscillator or a tunable and selectable microwave filter for selecting and adjusting of the bandpass frequency by varying the biasing voltages.

3. 发明申请

US20180069528A1 Tunable Film Bulk Acoustic Resonators and Filters with Integrated Biasing Resistors 审中-公开
公开(公告)号：US20180069528A1
公开(公告)日：2018-03-08
申请号：US15330313
申请日：2016-09-06
申请人： Cindy X. Qiu , Ishiang Shih , Chunong Qiu , Andy Shih , Julia Qiu , Yi-Chi Shih
发明人： Cindy X. Qiu , Ishiang Shih , Chunong Qiu , Andy Shih , Julia Qiu , Yi-Chi Shih
IPC分类号： H03H9/54 , H03H9/17 , H01L41/047 , H01L41/187 , C01B21/072 , C01B21/06 , C01G9/02 , C01G33/00 , C01G23/00
CPC分类号： H03H9/542 , C01B21/0602 , C01B21/0632 , C01B21/072 , H01L41/047 , H01L41/187 , H01L41/1871 , H01L41/1873 , H01L41/1876 , H03H9/0542 , H03H9/171 , H03H9/173 , H03H9/568 , H03H9/605 , H03H2009/02196
摘要： In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies one for transmit and the other for receive. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The present invention provides frequency tunable film bulk acoustic resonators (FBAR) with different structures. Thin film biasing resistors are integrated into the FBAR structure for DC biasing and RF isolation. A plurality of the present tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying DC biasing voltages to the resonators.

4. 发明申请

US20170025596A1 Tunable film bulk acoustic resonators and filters 审中-公开
标题翻译：可调薄膜体声共振器和滤波器
公开(公告)号：US20170025596A1
公开(公告)日：2017-01-26
申请号：US14756018
申请日：2015-07-22
申请人： Cindy X. Qiu , Ishiang Shih , Chunong Qiu , Andy Shih , Julia Qiu , Yi-Chi Shih
发明人： Cindy X. Qiu , Ishiang Shih , Chunong Qiu , Andy Shih , Julia Qiu , Yi-Chi Shih
IPC分类号： H03H9/00 , H01L41/047 , H01L41/107 , H01L41/083 , H01P1/201
CPC分类号： H01P1/201 , H03H9/0014 , H03H9/173 , H03H9/568 , H03H9/583 , H03H2003/0464 , H03H2009/02196
摘要： In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies, one for transmitting and the other for receiving. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The invention provides tunable film bulk acoustic resonators TFBARs containing semiconducting piezoelectric layers and methods for tuning and adjusting the resonant properties. When a DC biasing voltage is varied, both the depletion region thickness and neutral region thickness associated in the semiconducting piezoelectric layers varies leading to changes in equivalent capacitances, inductance and resistances and hence the resonance properties and frequencies. A plurality of the present TFBARs are connected into a tunable oscillator or a tunable and selectable microwave filter for selecting and adjusting of the bandpass frequency by varying the biasing voltages.
摘要翻译：在无线通信中，使用许多无线电频带。对于每个频带，有两个频率，一个用于发射，另一个用于接收。由于带宽小，相邻带之间的间隔也较小，所以对于诸如移动手持机的每个通信单元，需要许多具有不同带通频带的带通滤波器。本发明提供了可调谐的膜体声波谐振器，包含半导体压电层的TFBAR和用于调谐和调节谐振特性的方法。当DC偏置电压变化时，在半导体压电层中相关的耗尽区厚度和中性区厚度都变化导致等效电容，电感和电阻以及共振特性和频率的变化。多个本TFBAR连接到可调谐振荡器或可调谐和可选择的微波滤波器中，用于通过改变偏置电压来选择和调整带通频率。

5. 发明授权

US09324739B1 Thin film transistors with metal oxynitride active channels for electronic displays 有权
公开(公告)号：US09324739B1
公开(公告)日：2016-04-26
申请号：US14121896
申请日：2014-11-03
申请人： Ishiang Shih , Andy Shih , Cindy Qiu , Julia Qiu , Yi-Chi Shih , Chunong Qiu
发明人： Ishiang Shih , Andy Shih , Cindy Qiu , Julia Qiu , Yi-Chi Shih , Chunong Qiu
IPC分类号： H01L27/12 , H01L29/786 , H01L27/32
CPC分类号： H01L29/7869 , H01L27/1214 , H01L27/1222 , H01L27/1225 , H01L27/1251 , H01L27/3262 , H01L29/78696
摘要： In one embodiment of the invention, a high electron mobility thin film transistor with a plurality of gate insulating layers and a metal oxynitride active channel layer is provided for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and minimize unwanted power dissipation in the backplane circuit.Another embodiment of the invention provides a high electron mobility thin film transistor structure with a plurality of metal oxynitride active channel layers and a gate insulating layer for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and to minimize unwanted power dissipation in the backplane circuit.In yet another embodiment of the invention a high electron mobility thin film transistor structure with a plurality of gate insulating layers and a plurality of metal oxynitride active channel layers for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layers and to minimize unwanted power dissipation in the backplane circuit.

6. 发明申请

US20160005771A1 Millimetre wave integrated circuits with thin film transistors 审中-公开
公开(公告)号：US20160005771A1
公开(公告)日：2016-01-07
申请号：US14756093
申请日：2015-08-03
申请人： Ishiang Shih , Cindy Xing Qiu , Chunong Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Cindy Xing Qiu , Chunong Qiu , Yi-Chi Shih
IPC分类号： H01L27/12 , H01L49/02 , H01L29/24 , H01L21/4763 , H01L21/02 , H01L29/66 , H01L21/4757
CPC分类号： H01L27/1259 , H01L21/02565 , H01L21/47573 , H01L21/47635 , H01L27/1218 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L28/20 , H01L28/40 , H01L29/24 , H01L29/42384 , H01L29/66969
摘要： MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules.

7. 发明授权

US09048305B2 High electron mobility transistors with minimized performance effects of microcracks in the channel layers 有权
标题翻译：高电子迁移率晶体管，通道层中微裂纹的性能影响最小
公开(公告)号：US09048305B2
公开(公告)日：2015-06-02
申请号：US13998210
申请日：2013-10-15
申请人： Ishiang Shih , Chunong Qiu , Cindy X. Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Chunong Qiu , Cindy X. Qiu , Yi-Chi Shih
IPC分类号： H01L29/66 , H01L29/778
CPC分类号： H01L29/7787 , H01L29/045 , H01L29/2003
摘要： In HEMTs based on III-nitrides epitaxial films or GaAs, AlGaAs and InGaAs epitaxial films, unwanted microcracks are often formed in the composite epitaxial layers in the channel region during fabrication and operation. These microcracks are caused by strain or stresses due to lattice mismatch and thermal expansion coefficient differences between materials and substrate's. Those microcracks will bring about an increase in source to drain resistance and lead to performance and reliability degradation of the HEMTs and the MMICs containing them. The present invention provides HEMTs with minimized effects of the unwanted microcracks by aligning the channel region long axis to a certain direction so that the channel region long axis forms a right angle with axis of at least one type of the microcracks.
摘要翻译：在基于III族氮化物外延膜或GaAs，AlGaAs和InGaAs外延膜的HEMT中，在制造和操作期间通常在沟道区域中的复合外延层中形成不期望的微裂纹。这些微裂纹是由于材料和衬底之间的晶格失配和热膨胀系数差异引起的应变或应力引起的。这些微裂纹将引起源极漏极阻抗的增加，并导致HEMT和包含它们的MMIC的性能和可靠性降级。本发明通过将沟道区域长轴对准某一方向，使得沟道区域长轴与至少一种类型的微裂纹的轴线成直角，从而为HEMT提供了不需要的微裂纹的最小化效果。

8. 发明授权

US08759877B2 Stress release structures for metal electrodes of semiconductor devices 有权
公开(公告)号：US08759877B2
公开(公告)日：2014-06-24
申请号：US12802152
申请日：2010-06-01
申请人： Ishiang Shih , Cindy Xing Qiu , Chunong Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Cindy Xing Qiu , Chunong Qiu , Yi-Chi Shih
IPC分类号： H01L29/66 , H01L29/20 , H01L29/778
CPC分类号： H01L29/2003 , H01L29/0603 , H01L29/0653 , H01L29/0817 , H01L29/0821 , H01L29/0843 , H01L29/1004 , H01L29/42316 , H01L29/42372 , H01L29/7371 , H01L29/7787
摘要： This invention teaches stress release metal electrodes for gate, drain and source in a field effect transistor and stress release metal electrodes for emitter, base and collector in a bipolar transistor. Due to the large difference in the thermal expansion coefficients between semiconductor materials and metal electrodes, significant strain and stresses can be induced in the devices during the fabrication and operation. The present invention provides metal electrode with stress release structures to reduce the strain and stresses in these devices.

9. 发明授权

US08502744B2 Scanning antenna 有权
标题翻译：扫描天线
公开(公告)号：US08502744B2
公开(公告)日：2013-08-06
申请号：US12211622
申请日：2008-09-16
申请人： Yi-Chi Shih , Long Bui , Tom Rolfer , Kiet Mai , Yaozhong Liu
发明人： Yi-Chi Shih , Long Bui , Tom Rolfer , Kiet Mai , Yaozhong Liu
IPC分类号： H01Q3/12 , H01Q19/12
CPC分类号： H01Q3/18 , G01S13/913 , H01Q1/281 , H01Q3/16 , H01Q15/22 , H01Q19/193 , H01Q19/195
摘要： A reflector assembly implementable in a scanning antenna assembly having a stationary surface includes a support assembly coupled to the stationary surface, a substantially planar first reflector panel coupled to the support assembly so as to enable rotation of the first reflector panel about a central axis of the first reflector panel, and an actuator assembly comprising a translating arm coupled to the first reflector panel, wherein translational motion of the arm is operable to rotate the first reflector panel about the central axis back and forth through a predetermined angular range at a predetermined frequency.
摘要翻译：可在具有固定表面的扫描天线组件中实施的反射器组件包括联接到固定表面的支撑组件，联接到支撑组件的基本上平面的第一反射器面板，以便能够使第一反射器板围绕第一反射器面板和包括耦合到第一反射器面板的平移臂的致动器组件，其中臂的平移运动可操作以使第一反射器面板围绕中心轴线以预定频率来回旋转预定角度范围。

10. 发明授权

US08455312B2 Fabrication methods for T-gate and inverted L-gate structure for high frequency devices and circuits 有权
公开(公告)号：US08455312B2
公开(公告)日：2013-06-04
申请号：US13199816
申请日：2011-09-12
申请人： Cindy X. Qiu , Ishiang Shih , Chunong Qiu , Yi-Chi Shih , Julia Qiu
发明人： Cindy X. Qiu , Ishiang Shih , Chunong Qiu , Yi-Chi Shih , Julia Qiu
IPC分类号： H01L21/338 , H01L21/44
CPC分类号： H01L21/0272 , H01L21/0274 , H01L21/28587 , H01L21/28593
摘要： In high frequency circuits, the switching speed of devices is often limited by the series resistance and capacitance across the input terminals. To reduce the resistance and capacitance, the cross-section of input electrodes is made into a T-shape or inverted L-shape through lithography. The prior art method for the formation of cavities for T-gate or inverted L-gate is achieved through several steps using multiple photomasks. Often, two or even three different photoresists with different sensitivity are required. In one embodiment of the present invention, an optical lithography method for the formation of T-gate or inverted L-gate structures using only one photomask is disclosed. In another embodiment, the structure for the T-gate or inverted L-gate is formed using the same type of photoresist material.

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