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1. 发明授权

US09203357B2 Power amplifier 有权
标题翻译：功率放大器
公开(公告)号：US09203357B2
公开(公告)日：2015-12-01
申请号：US13433410
申请日：2012-03-29
申请人： Shinichi Miwa , Yoshihiro Tsukahara , Ko Kanaya , Naoki Kosaka
发明人： Shinichi Miwa , Yoshihiro Tsukahara , Ko Kanaya , Naoki Kosaka
IPC分类号： H01L27/085 , H01L23/66 , H03F1/56 , H01L27/02 , H01L27/06 , H03F3/195 , H03F3/21 , H03F3/24 , H01L23/64 , H01L21/8252
CPC分类号： H03F1/56 , H01L21/8252 , H01L23/647 , H01L23/66 , H01L27/0207 , H01L27/0605 , H01L27/085 , H01L2223/6655 , H01L2224/48137 , H01L2224/49175 , H01L2924/00014 , H01L2924/1305 , H03F3/195 , H03F3/211 , H03F3/245 , H03F2200/222 , H03F2200/387 , H03F2203/21106 , H03F2203/21142 , H01L2224/45099 , H01L2924/00
摘要： A power amplifier includes a semiconductor substrate including transistor cells, a drain electrode for the transistor cells located on the semiconductor substrate, a drain pad located on the semiconductor substrate and connected to the drain electrode, an ion-implanted resistance located in the semiconductor substrate and extending along and in contact with the drain pad, a floating electrode located on the semiconductor substrate and in contact with the ion-implanted resistance, and an output matching circuit located outside the semiconductor substrate. The power amplifier further includes a wire connecting the drain pad to the output matching circuit.
摘要翻译：功率放大器包括：半导体衬底，包括晶体管单元，用于位于半导体衬底上的晶体管单元的漏极电极，位于半导体衬底上并连接到漏电极的漏极焊盘，位于半导体衬底中的离子注入电阻;以及沿着漏极焊盘延伸和接触，位于半导体衬底上并与离子注入电阻接触的浮动电极以及位于半导体衬底之外的输出匹配电路。功率放大器还包括将漏极焊盘连接到输出匹配电路的导线。

2. 发明申请

US20130169346A1 SWITCH CIRCUIT 有权
标题翻译：开关电路
公开(公告)号：US20130169346A1
公开(公告)日：2013-07-04
申请号：US13608449
申请日：2012-09-10
申请人： Yoshihiro TSUKAHARA
发明人： Yoshihiro TSUKAHARA
IPC分类号： H03K17/56
CPC分类号： H03K17/693
摘要： A switch circuit includes: first, second, and third input-output terminals; a first switching element connected between the first and second input-output terminals; a second switching element connected between the third input-output terminal and a grounding point; a third switching element connected between the first and third input-output terminals; a fourth switching element connected between the second input-output terminal and the grounding point; a first control voltage applying terminal connected to control terminals of the first and second switching elements; a second control voltage applying terminal connected to control terminals of the third and fourth switching elements; first and second resistors connected between the control terminals of the first and second switching elements and the first control voltage applying terminal, respectively; and first and second diodes connected in parallel with the first and second resistors, respectively, and having cathodes connected to the first control voltage applying terminal.
摘要翻译：开关电路包括：第一，第二和第三输入输出端子; 连接在第一和第二输入 - 输出端子之间的第一开关元件; 连接在第三输入输出端子和接地点之间的第二开关元件; 第三开关元件，连接在第一和第三输入 - 输出端子之间; 连接在第二输入 - 输出端子和接地点之间的第四开关元件; 连接到第一和第二开关元件的控制端子的第一控制电压施加端子; 连接到第三和第四开关元件的控制端子的第二控制电压施加端子; 分别连接在第一和第二开关元件的控制端子与第一控制电压施加端子之间的第一和第二电阻器; 以及分别与第一和第二电阻器并联连接并具有连接到第一控制电压施加端子的阴极的第一和第二二极管。

3. 发明授权

US08416032B2 Semiconductor switch, transceiver, transmitter, and receiver 有权
标题翻译：半导体开关，收发器，发射器和接收器
公开(公告)号：US08416032B2
公开(公告)日：2013-04-09
申请号：US12917520
申请日：2010-11-02
申请人： Yoshihiro Tsukahara
发明人： Yoshihiro Tsukahara
IPC分类号： H01P1/10 , H01P1/15
CPC分类号： H03K17/002 , H03K17/693 , H04B1/48
摘要： A semiconductor switch includes a main line, branch lines branching from the main line at the same branch point, switching devices shunt-connected between one of the branch lines and ground and operated so that the one of the branch lines is connected to and disconnected from ground, a main terminal connected to an end of the main line, and branch terminals connected to an end of one of the branch lines. The impedance of one of the branch lines, as seen from the branch point, is conjugately matched to the combined impedance of the main line and the rest of the branch lines, as seen from the branch point, the one of the branch lines transmitting an RF signal, and the rest of the branch lines blocking the RF signal.
摘要翻译：半导体开关包括主线，在相同分支点处从主线分支的分支线，分支连接在一条分支线之间并接地并被操作的开关装置，使得一条支线连接到和断开接地，连接到主线的端部的主端子和连接到一条支线的端部的分支端子。从分支点看，分支线之一的阻抗与主线和其余分支线的组合阻抗共轭匹配，如从分支点所见，分支线中的一条发送 RF信号，其余的分支线阻挡RF信号。

4. 发明申请

US20130032817A1 POWER AMPLIFIER 有权
标题翻译：功率放大器
公开(公告)号：US20130032817A1
公开(公告)日：2013-02-07
申请号：US13433410
申请日：2012-03-29
申请人： Shinichi MIWA , Yoshihiro TSUKAHARA , Ko KANAYA , Naoki KOSAKA
发明人： Shinichi MIWA , Yoshihiro TSUKAHARA , Ko KANAYA , Naoki KOSAKA
IPC分类号： H01L27/06
CPC分类号： H03F1/56 , H01L21/8252 , H01L23/647 , H01L23/66 , H01L27/0207 , H01L27/0605 , H01L27/085 , H01L2223/6655 , H01L2224/48137 , H01L2224/49175 , H01L2924/00014 , H01L2924/1305 , H03F3/195 , H03F3/211 , H03F3/245 , H03F2200/222 , H03F2200/387 , H03F2203/21106 , H03F2203/21142 , H01L2224/45099 , H01L2924/00
摘要： A power amplifier includes a semiconductor substrate including transistor cells, a drain electrode for the transistor cells located on the semiconductor substrate, a drain pad located on the semiconductor substrate and connected to the drain electrode, an ion-implanted resistance located in the semiconductor substrate and extending along and in contact with the drain pad, a floating electrode located on the semiconductor substrate and in contact with the ion-implanted resistance, and an output matching circuit located outside the semiconductor substrate. The power amplifier further includes a wire connecting the drain pad to the output matching circuit.
摘要翻译：功率放大器包括：半导体衬底，包括晶体管单元，用于位于半导体衬底上的晶体管单元的漏极电极，位于半导体衬底上并连接到漏电极的漏极焊盘，位于半导体衬底中的离子注入电阻;以及沿着漏极焊盘延伸和接触，位于半导体衬底上并与离子注入电阻接触的浮动电极以及位于半导体衬底之外的输出匹配电路。功率放大器还包括将漏极焊盘连接到输出匹配电路的导线。

5. 发明申请

US20120133436A1 POWER AMPLIFIER AND MMIC USING THE SAME 有权
标题翻译：功率放大器和MMIC使用它
公开(公告)号：US20120133436A1
公开(公告)日：2012-05-31
申请号：US13177592
申请日：2011-07-07
申请人： Yoshihiro Tsukahara
发明人： Yoshihiro Tsukahara
IPC分类号： H03F3/45
CPC分类号： H03F1/56 , H03F1/0266 , H03F3/195 , H03F3/601 , H03F2200/12 , H03F2200/18 , H03F2200/222 , H03F2200/387 , H03F2200/411
摘要： A power amplifier includes an input terminal, an input matching circuit connected to the input terminal, an amplifying transistor having a gate connected to the input matching circuit, an output matching circuit connected to the drain of the amplifying transistor, an output terminal connected to the output matching circuit, and an inverting differentiator circuit for either inverting and then differentiating, or differentiating and then inverting, a signal from the input terminal. The output of the inverting differentiator circuit is connected to the gate.
摘要翻译：功率放大器包括输入端子，连接到输入端子的输入匹配电路，具有连接到输入匹配电路的栅极的放大晶体管，连接到放大晶体管的漏极的输出匹配电路，连接到放大晶体管的输出端子输出匹配电路和反相微分电路，用于对来自输入端的信号进行反相，然后微分或微分，然后反相。反相微分电路的输出端连接到门。

6. 发明申请

US20110175686A1 HIGH FREQUENCY SECOND HARMONIC OSCILLATOR 审中-公开
标题翻译：高频二次谐波振荡器
公开(公告)号：US20110175686A1
公开(公告)日：2011-07-21
申请号：US12911764
申请日：2010-10-26
申请人： Shinsuke Watanabe , Yoshihiro Tsukahara , Ko Kanaya , Shinichi Miwa
发明人： Shinsuke Watanabe , Yoshihiro Tsukahara , Ko Kanaya , Shinichi Miwa
IPC分类号： H03B5/12
CPC分类号： H03B5/1847 , H03D2200/0086
摘要： A high frequency second harmonic oscillator includes a transistor, a first signal line connected at a first end to the base or gate of the transistor, a first shunt capacitor connected at a first end to a second end of the first signal line and at a second end to ground, a second signal line connected at a first end to the collector or drain of the transistor, a second shunt capacitor connected at a first end to a second end of the second signal line and at a second end to ground, and a high capacitance capacitor connected between the first signal line and the second signal line. The first signal line has a length equal to an odd integer multiple of one quarter of the wavelength of a fundamental signal, plus or minus one-sixteenth of the wavelength of the fundamental signal.
摘要翻译：高频二次谐波振荡器包括晶体管，在第一端连接到晶体管的基极或栅极的第一信号线，在第一端连接到第一信号线的第二端的第一并联电容器，在第一端连接到晶体管的集电极或漏极的第二信号线，在第一端连接到第二信号线的第二端并在第二端连接到地的第二并联电容器，以及连接在第一信号线和第二信号线之间的高容量电容器。第一信号线具有等于基本信号波长四分之一的奇整数倍的长度，加上或减去基波信号波长的十六分之一。

7. 发明授权

US07411471B2 High-frequency switch 有权
标题翻译：高频开关
公开(公告)号：US07411471B2
公开(公告)日：2008-08-12
申请号：US11484661
申请日：2006-07-12
申请人： Yoshihiro Tsukahara
发明人： Yoshihiro Tsukahara
IPC分类号： H01P1/10 , H01P5/12
CPC分类号： H01P1/15 , H03H11/28
摘要： A high-frequency switch operating in a millimeter wave band that includes a signal path having a λ/4 transmission path, for part of two or more branch signal paths that branch from an input connection path via a branch point; an FET, which is shunt-connected between a grounding end and the branch signal paths that are positioned between the λ/4 transmission path and a terminal end, as viewed from the branch point, and used to connect or disconnect the branch signal paths and the grounding end; an output matching circuit, which is positioned on the branch signal paths that are positioned between a terminal end and a connection point for the FET as viewed from the branch point, and includes a shunt-connected stub; and a matching FET, which is connected between the stub and the grounding end and used to connect or disconnect the stub and the grounding end in accordance with the FET's connection/disconnection.
摘要翻译：一种工作在毫米波段的高频开关，其包括具有λ/ 4传输路径的信号路径，用于经由分支点从输入连接路径分支的两个或更多个分支信号路径的一部分; FET，分支连接在接地端与位于λ/ 4传输路径和终端之间的分支信号路径之间，从分支点观察，并用于连接或断开分支信号路径，接地端; 输出匹配电路，其位于从分支点观察的位于FET的终端和FET的连接点之间的分支信号路径上，并且包括分流连接短截线; 以及连接在短截线和接地端之间的匹配FET，用于根据FET的连接/断开连接或断开短截线和接地端。

8. 发明申请

US20070171000A1 High-frequency switch 有权
标题翻译：高频开关
公开(公告)号：US20070171000A1
公开(公告)日：2007-07-26
申请号：US11484661
申请日：2006-07-12
申请人： Yoshihiro Tsukahara
发明人： Yoshihiro Tsukahara
IPC分类号： H03H7/38
CPC分类号： H01P1/15 , H03H11/28
摘要： A high-frequency switch operating in a millimeter wave band that includes a signal path having a λ/4 transmission path, for part of two or more branch signal paths that branch from an input connection path via a branch point; an FET, which is shunt-connected between a grounding end and the branch signal paths that are positioned between the λ/4 transmission path and a terminal end, as viewed from the branch point, and used to connect or disconnect the branch signal paths and the grounding end; an output matching circuit, which is positioned on the branch signal paths that are positioned between a terminal end and a connection point for the FET as viewed from the branch point, and includes a shunt-connected stub; and a matching FET, which is connected between the stub and the grounding end and used to connect or disconnect the stub and the grounding end in accordance with the FET's connection/disconnection.
摘要翻译：一种工作在毫米波段的高频开关，其包括具有λ/ 4传输路径的信号路径，用于经由分支点从输入连接路径分支的两个或更多个分支信号路径的一部分; FET，分支连接在接地端与位于λ/ 4传输路径和终端之间的分支信号路径之间，从分支点观察，并用于连接或断开分支信号路径，接地端; 输出匹配电路，其位于从分支点观察的位于FET的终端和FET的连接点之间的分支信号路径上，并且包括分流连接短截线; 以及连接在短截线和接地端之间的匹配FET，用于根据FET的连接/断开连接或断开短截线和接地端。

9. 发明授权

US07106146B2 High frequency switch 有权
标题翻译：高频开关
公开(公告)号：US07106146B2
公开(公告)日：2006-09-12
申请号：US10895837
申请日：2004-07-22
申请人： Yoshihiro Tsukahara , Makio Komaru
发明人： Yoshihiro Tsukahara , Makio Komaru
IPC分类号： H01P1/15
CPC分类号： H01P1/15
摘要： A signal line, which branches into four more from a connecting line on the input side via a branch point and has the branch signal lines including λ/4 transmission lines at their parts, and FETs respectively connected in shunt with the branch signal lines between connecting points on the output terminal sides as viewed from the λ/4 transmission lines provided in the branch signal lines and ground ends are provided on a semiconductor substrate. Connecting points of the FETs at the two branch signal lines are disposed with being spaced such a distance that isolation corresponding to the frequency of an RF signal reaches more than equal to 25 dB and less than or equal to 35 dB at the ends of these branch signal lines.
摘要翻译：信号线通过分支点从输入侧的连接线分支成四个，并且在它们的部分具有包括λ/ 4传输线的分支信号线，并且分别连接到分支信号线之间的连接的FET连接从设置在分支信号线和接地端的λ/ 4传输线观察的输出端侧的点设置在半导体衬底上。两个分支信号线上的FET的连接点被设置成间隔开这样的距离，使得对应于RF信号的频率的隔离在这些分支的端部达到大于等于25dB且小于或等于35dB 信号线。

10. 发明授权

US06534725B2 High-frequency circuit board and semiconductor device using the high-frequency circuit board 有权
标题翻译：高频电路板和半导体器件采用高频电路板
公开(公告)号：US06534725B2
公开(公告)日：2003-03-18
申请号：US09873191
申请日：2001-06-05
申请人： Yoshihiro Tsukahara
发明人： Yoshihiro Tsukahara
IPC分类号： H05K706
CPC分类号： H01P1/15 , H01L23/66 , H01L24/81 , H01L2223/6627 , H01L2224/16 , H01L2224/81801 , H01L2924/01057 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/12034 , H01L2924/14 , H01L2924/1903 , H01L2924/3011 , H01L2924/00
摘要： A high-frequency switch includes: a high-frequency circuit board including an MIC substrate, a microstrip line disposed on a front surface of the MIC substrate, and a signal wiring layer and a front surface grounding conductor disposed along the microstrip line; bumps disposed on the microstrip line, the signal wiring layer, and the front surface grounding conductor; and a semiconductor chip disposed on the high-frequency circuit board through the bumps. A gate electrode of a transistor of the semiconductor chip is connected to the signal wiring layer of the high-frequency circuit board through at least one of the bumps; a source electrode is connected to the front surface grounding conductor through at least one of the bumps; and a drain electrode is connected to the microstrip line through at least one of the bumps.
摘要翻译：一种高频开关包括：高频电路板，包括MIC基板，设置在MIC基板的前表面上的微带线，以及沿着微带线设置的信号布线层和前表面接地导体; 布置在微带线上的凸起，信号布线层和前表面接地导体; 以及通过凸块设置在高频电路板上的半导体芯片。半导体芯片的晶体管的栅电极通过至少一个凸块连接到高频电路板的信号布线层; 源电极通过至少一个凸块连接到前表面接地导体; 并且漏极通过至少一个凸块连接到微带线。

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