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    • 1. 发明授权
    • Display control apparatus
    • 显示控制装置
    • US09415686B2
    • 2016-08-16
    • US14361737
    • 2012-12-25
    • Yoshihiro UedaHitoshi SugiyamaShigeo Katoh
    • Yoshihiro UedaHitoshi SugiyamaShigeo Katoh
    • B60K37/02B60K35/00G06F3/14G01C21/36H04N21/472G06F5/00
    • B60K37/02B60K35/00B60K2350/1096B60K2350/352G01C21/36G01C21/3602G06F3/1423G06F5/00G09G2380/10H04N21/472
    • A display control apparatus, with respect to multiple display areas of a display screen of a display apparatus, assigns one display image to one of the display areas by performing a predetermined calculation. The display control apparatus includes a display image managing section storing image information related to the display image, a display area managing section storing area information related to each display area, a mandatory exclusion information storing section storing mandatory exclusion information that defines multiple display image combinations so that the display image is included in each of the display image combinations, and a display image assignment control section. The display image assignment control section, based on the mandatory exclusion information, determines the display image combinations, generates a display image combination list, and assigns the display image to the display area based on the display image combination list.
    • 显示控制装置相对于显示装置的显示画面的多个显示区域,通过执行预定的计算将一个显示图像分配给一个显示区域。 显示控制装置包括存储与显示图像相关的图像信息的显示图像管理部分,存储与每个显示区域相关的区域信息的显示区域管理部分,存储限定多个显示图像组合的强制排除信息的强制排除信息存储部分 显示图像被包括在每个显示图像组合中,以及显示图像分配控制部分。 显示图像分配控制部分基于强制排除信息确定显示图像组合,生成显示图像组合列表,并且基于显示图像组合列表将显示图像分配给显示区域。
    • 5. 发明授权
    • Hydraulic system of work machine
    • 工作机液压系统
    • US08438843B2
    • 2013-05-14
    • US12417004
    • 2009-04-02
    • Yoshihiro UedaKeisuke Miura
    • Yoshihiro UedaKeisuke Miura
    • F16D31/02
    • F15B11/17E02F9/2242F15B2211/20576F15B2211/30565F15B2211/31576F15B2211/327F15B2211/6346F15B2211/665F15B2211/7135F15B2211/7142
    • A hydraulic system of a work machine with a hydraulically controlled implement includes: an operating oil flow passage for flowing operating oil from a main pump; a boost flow oil passage for supplying operating oil to the operating oil flow passage; a connection unit for connecting the implement which is provided downstream of the confluence on the operating oil flow passage; a controller for controlling the high-flow valve; and a high-flow switch which is connected to the controller and is configured to effect or cancel a command of the amount increase on a high-flow valve. Annunciation is made when the connection unit is connected to a high-flow actuator for the implement requiring an amount increase of the operating oil, and the amount increase is effected by the high-flow valve in accordance with an operation of the high-flow switch.
    • 具有液压控制工具的作业机械的液压系统包括:用于从主泵流动工作油的操作油流动通道; 用于向工作油流动通道供给工作油的增压流动油通道; 连接单元,用于将设置在汇合点下游的工具连接在工作油流动通道上; 用于控制高流量阀的控制器; 以及高流量开关,其连接到控制器并且被配置为实现或取消高流量阀上的增加量的指令。 当连接单元连接到需要增加工作油的工具的高流量致动器时,发出通知,并且根据大流量开关的操作由高流量阀实现增加量 。
    • 6. 发明申请
    • SEMICONDUCTOR MEMORY
    • 半导体存储器
    • US20120320665A1
    • 2012-12-20
    • US13422110
    • 2012-03-16
    • Yoshihiro UEDAKosuke HATSUDA
    • Yoshihiro UEDAKosuke HATSUDA
    • G11C11/00
    • G11C11/1673
    • A semiconductor memory includes a first memory cell including: a first resistance change element and a first select transistor. The semiconductor memory includes a second memory cell including: a second select transistor and a second resistance change element. The semiconductor memory includes a third memory cell including: a third select transistor and a third resistance change element, the third memory cell acting as a reference cell. The semiconductor memory includes a fourth memory cell including: a fourth resistance change element and a fourth select transistor, the fourth memory cell acting as a reference cell.
    • 半导体存储器包括:第一存储单元,包括:第一电阻变化元件和第一选择晶体管。 半导体存储器包括第二存储单元,其包括:第二选择晶体管和第二电阻变化元件。 半导体存储器包括第三存储单元,第三存储单元包括:第三选择晶体管和第三电阻变化元件,第三存储单元用作参考单元。 半导体存储器包括:第四存储单元,包括:第四电阻变化元件和第四选择晶体管,第四存储单元用作参考单元。
    • 8. 发明授权
    • Resistance change memory
    • 电阻变化记忆
    • US08189363B2
    • 2012-05-29
    • US12543793
    • 2009-08-19
    • Kenji TsuchidaYoshihiro Ueda
    • Kenji TsuchidaYoshihiro Ueda
    • G11C11/00G11C7/02
    • G11C11/1673G11C11/1659G11C11/1675
    • A resistance change memory includes two memory cell arrays each including a plurality of memory cells, the memory cells including variable resistive elements, two reference cell arrays provided to correspond to the two memory cell arrays, respectively, and each including a plurality of reference cells, the reference cells having a reference value, and a sense amplifier shared by the two memory cell arrays and detecting data in an accessed memory cell by use of a reference cell array corresponding to a second memory cell array different from a first memory cell array including the accessed memory cell. In reading the data, a particular reference cell in one reference cell array is always activated for an address space based on one memory cell array as a unit.
    • 电阻变化存储器包括两个存储单元阵列,每个存储单元阵列包括多个存储单元,存储单元包括可变电阻元件,分别提供给两个存储单元阵列的两个参考单元阵列,每个参考单元阵列包括多个参考单元, 所述参考单元具有参考值,以及由所述两个存储单元阵列共享的读出放大器,并且通过使用与包括所述存储单元阵列的第一存储单元阵列不同的第二存储单元阵列对应的参考单元阵列来检测所访问的存储器单元中的数据 存取存储单元 在读取数据时,一个参考单元阵列中的特定参考单元总是基于一个存储单元阵列作为单元而被激活用于地址空间。
    • 9. 发明授权
    • Speed changing transmission apparatus
    • 变速传动装置
    • US08172714B2
    • 2012-05-08
    • US12281719
    • 2007-09-25
    • Shoso IshimoriYoshiyuki KatayamaYoshihiro UedaShinichi MoritaShinichi KawabataShigeki HayashiMasaaki NishinakaTakayasu KobayashiGo Takagi
    • Shoso IshimoriYoshiyuki KatayamaYoshihiro UedaShinichi MoritaShinichi KawabataShigeki HayashiMasaaki NishinakaTakayasu KobayashiGo Takagi
    • F16H3/72F16H37/06F16H47/04F16H3/44B60K17/06
    • F16H47/04F16H2037/088F16H2037/0886F16H2200/201
    • A composite planetary transmission section (P) is provided for synthesizing output from a stepless speed changing section (20) with an engine drive force. In a transmission line from the planetary transmission section (P) to an output rotational body (90), there are provided first clutch mechanism (60), a second clutch mechanism (70), a speed-reducing planetary transmission mechanism (80), an operable coupling clutch mechanism (110) and an output clutch mechanism (120). A ring gear (83) of the speed-reducing planetary transmission mechanism (80) includes a brake mechanism (100). A sun gear (43) of the planetary transmission section (P), an input side rotational member (62) of the first clutch mechanism (60), an input side rotational member (71) of the second clutch mechanism (70), a sun gear (84) of the speed-reducing planetary transmission mechanism (80), and an input side rotational member (122) of the output clutch mechanism (120) are rotatable about a common rotational axis. A rotational shaft (97) operably coupling a carrier (44) of the composite planetary transmission section (P) with the output rotational body (90) is inserted through a planetary transmission mechanism (50) of the composite planetary transmission section (P), the first clutch mechanism (60), the second clutch mechanism (70) and the speed-reducing planetary transmission mechanism (80).
    • 复合行星传动部分(P)用于合成来自无级变速部分(20)的输出与发动机驱动力。 在从行星传动部(P)到输出旋转体(90)的传输线中,设置有第一离合器机构(60),第二离合器机构(70),减速行星传动机构(80) 可操作的联接离合器机构(110)和输出离合器机构(120)。 减速行星传动机构(80)的齿圈(83)包括制动机构(100)。 行星传动部(P)的太阳齿轮(43),第一离合器机构(60)的输入侧旋转部件(62),第二离合器机构(70)的输入侧旋转部件(71) 减速行星传动机构80的太阳齿轮(84)和输出离合器机构(120)的输入侧旋转部件(122)能够绕公共旋转轴线旋转。 通过复合行星传动部(P)的行星传动机构(50)插入将复合行星传动部(P)的托架(44)与输出转动体(90)可操作地连接的旋转轴(97) 第一离合器机构(60),第二离合器机构(70)和减速行星传动机构(80)。
    • 10. 发明申请
    • SEMICONDUCTOR MEMORY DEVICE
    • 半导体存储器件
    • US20110235402A1
    • 2011-09-29
    • US13053041
    • 2011-03-21
    • Yoshihiro Ueda
    • Yoshihiro Ueda
    • G11C11/21
    • G11C11/1653G11C7/14G11C8/14G11C11/16G11C11/1657G11C11/1659G11C13/0004G11C13/0007G11C13/0028G11C13/004G11C2013/0042
    • According to one embodiment, a semiconductor memory device includes a first cell array includes memory cells and reference cells, a second cell array located adjacent to the first cell array in a first direction, a third cell array located adjacent to the first cell array in a second direction crossing the first direction, a fourth cell array located adjacent to the second cell array in the second direction, and a sense amplifier connected to the first to fourth cell array and configured to compare a current through a memory cell with a current through a reference cell to determine the data of the memory cell. A reference cell is selected from a cell array which is diagonally opposite to a cell array as a read target.
    • 根据一个实施例,半导体存储器件包括第一单元阵列,其包括存储单元和参考单元,在第一方向上与第一单元阵列相邻的第二单元阵列,位于第一单元阵列附近的第三单元阵列 与第二方向相邻的第四单元阵列,以及连接到第一至第四单元阵列的读出放大器,用于将通过存储单元的电流与通过第一方向的电流进行比较 参考单元以确定存储单元的数据。 从与作为读取目标的单元阵列对角地相对的单元阵列中选择参考单元。