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    • 2. 发明授权
    • Capacitor and method for fabricating the same
    • 电容器及其制造方法
    • US08530323B2
    • 2013-09-10
    • US13415947
    • 2012-03-09
    • Jin-Youn ChoYoung-Soo KangJong-Il KimSang-Geun Koo
    • Jin-Youn ChoYoung-Soo KangJong-Il KimSang-Geun Koo
    • H01L21/02
    • H01L28/60H01L28/65H01L28/75
    • A method for fabricating a capacitor is provided. The method for fabricating a capacitor includes forming a dielectric layer over a lower electrode on a substrate, forming an upper electrode over the dielectric layer, forming a hard mask over the upper electrode, etching the hard mask to form a hard mask pattern, etching the upper electrode to make the dielectric layer remain on the lower electrode in a predetermined thickness, forming an isolation layer along an upper surface of the remaining dielectric layer and the hard mask pattern, leaving the isolation layer having a shape of a spacer on one sidewall of the hard mask pattern, the upper electrode, and the dielectric layer, and etching the lower electrode to be isolated.
    • 提供一种制造电容器的方法。 制造电容器的方法包括在基板上的下电极上形成电介质层,在电介质层上形成上电极,在上电极上形成硬掩模,蚀刻硬掩模以形成硬掩膜图案,蚀刻 使电介质层以预定的厚度保持在下电极上,沿着剩余电介质层和硬掩模图案的上表面形成隔离层,使隔离层在一个侧壁上具有间隔物的形状 硬掩模图案,上电极和电介质层,并蚀刻待分离的下电极。