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1. 发明申请

US20210029904A1 PORTABLE CONTAINER AND DEVICE FOR PLANTING HYDROPONIC VEGETABLE 有权
公开(公告)号：US20210029904A1
公开(公告)日：2021-02-04
申请号：US16525201
申请日：2019-07-29
申请人： Yu Shen WANG
发明人： Yu Shen WANG
IPC分类号： A01G31/06 , A01G22/00
摘要： A portable container for planting a hydroponic vegetable is obliquely accommodated in and is removed from a portable device. The portable container contains: a first cup and a second cup. The first cup includes a first peripheral fence, a first bottom, a first accommodation chamber, at least one first planting orifice, and at least through orifice. The at least one first planting orifice is configured to accommodate a porous carrier. The second cup is fixed below the first cup and includes a second peripheral fence, a second bottom, and a second accommodation chamber. The second peripheral fence has a discharge orifice and a plug. An outer diameter of the drain pipe is more than an inner diameter of the plug, a lower end of the drain pipe is pressed into the plug, and the drain pipe includes a nylon mesh adhered on an upper end thereof.

2. 发明申请

US20180344641A1 MESOPOROUS SILICA NANOPARTICLES AND SUPPORTED LIPID BI-LAYER NANOPARTICLES FOR BIOMEDICAL APPLICATIONS 审中-公开
公开(公告)号：US20180344641A1
公开(公告)日：2018-12-06
申请号：US15757269
申请日：2016-09-02
申请人： C. Jeffrey Brinker , Paul N. Durfee , Jason Townson , Yu-Shen Lin , Stanley Shihyao Chou , Jacob Erstling
发明人： C. Jeffrey Brinker , Paul N. Durfee , Jason Townson , Yu-Shen Lin , Stanley Shihyao Chou , Jacob Erstling
IPC分类号： A61K9/127 , A61K47/62 , A61K47/69 , A61P31/14 , A61P35/02
CPC分类号： A61K9/1271 , A61K9/5146 , A61K47/62 , A61K47/6923 , B82Y5/00 , B82Y40/00
摘要： The present disclosure is directed to methods of producing monosized protocells from monosized mesoporous silica nanoparticles (mMSNPs) and their use for targeted drug delivery formulations and systems and for biomedical applications. The present disclosure is also directed in part to a multilamellar or unilamellar protocell vaccine to deliver full length viral protein and/or plasmid encoded viral protein to antigen presenting cells (APCs) in order to induce an immunogenic response to a virus.

3. 发明申请

US20180195216A1 MESH FABRIC STRUCTURE AND MESH FABRIC MATERIAL 审中-公开
公开(公告)号：US20180195216A1
公开(公告)日：2018-07-12
申请号：US15866037
申请日：2018-01-09
申请人： YU SHEN ENTERPRISE INC.
发明人： Hsueh-Fa LIN
IPC分类号： D04B1/12 , B32B23/10 , B32B5/26 , B32B7/02 , D06M17/00 , A41D27/28 , B32B7/12
CPC分类号： D04B1/12 , A41D27/28 , B32B5/024 , B32B5/026 , B32B5/26 , B32B7/02 , B32B7/12 , B32B23/10 , B32B2262/0292 , D06M17/00 , D10B2401/02
摘要： A mesh fabric structure includes a lower layer of mesh fabric and an upper layer of mesh fabric. Each of the two mesh fabrics has multiple regularly arranged meshes. The upper and lower layers of mesh fabrics are up and down overlapped with each other. The meshes of the two mesh fabrics are up and down arranged corresponding to each other to form regular 2D figures on the mesh fabric structure. A mesh fabric material includes a substrate fabric, a middle layer and a facial fabric, which are overlapped with each other. Each of the substrate fabric and the facial fabric has multiple meshes. The middle layer has at least one hollow section. The meshes of the substrate fabric and the meshes of the facial fabric are arranged corresponding to each other through the hollow section to form a 2D figure in the hollow section.

4. 发明授权

US09487675B2 Chemical mechanical polishing composition comprising polyvinyl phosphonic acid and its derivatives 有权
标题翻译：包含聚乙烯基膦酸及其衍生物的化学机械抛光组合物
公开(公告)号：US09487675B2
公开(公告)日：2016-11-08
申请号：US14362510
申请日：2011-12-21
申请人： Vijay Immanuel Raman , Yuzhuo Li , Christian Schade , Shyam Sundar Venkataraman , Eason Yu-Shen Su , Sheik Ansar Usman Ibrahim
发明人： Vijay Immanuel Raman , Yuzhuo Li , Christian Schade , Shyam Sundar Venkataraman , Eason Yu-Shen Su , Sheik Ansar Usman Ibrahim
IPC分类号： H01L21/302 , H01L21/461 , C09K13/00 , C09G1/04 , C09G1/00 , C09G1/02 , C09K3/14 , H01L21/3105 , H01L21/306
CPC分类号： C09G1/04 , C09G1/00 , C09G1/02 , C09K3/1463 , C09K13/00 , H01L21/302 , H01L21/30625 , H01L21/31053 , H01L21/461
摘要： A chemical mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an organic polymeric compound as a dispersing agent or charge reversal agent comprising a phosphonate (P(═O)(OR1)(OR2) or phosphonic acid (P(═O)(OH)2) moiety or their deprotonated forms as pendant groups, wherein R1 is alkyl, aryl, alkylaryl, or arylalkyl, R2 is H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.
摘要翻译：一种化学机械抛光（CMP）组合物，其包含：（A）无机颗粒，有机颗粒或其混合物或复合物，（B）至少一种作为分散剂的有机聚合物或电荷反转剂，其包含膦酸盐 P（ΟO）（OR1）（OR2）或膦酸（P（ΟO）（OH）2）部分或其去质子化形式为侧基，其中R 1为烷基，芳基，烷基芳基或芳基烷基，烷基，芳基，烷基芳基或芳烷基，和（C）水性介质。

5. 发明授权

US09087877B2 Low-k interconnect structures with reduced RC delay 有权
标题翻译：具有降低RC延迟的低k互连结构
公开(公告)号：US09087877B2
公开(公告)日：2015-07-21
申请号：US11585610
申请日：2006-10-24
申请人： Chung-Chi Ko , Ting-Yu Shen , Keng-Chu Lin , Chia-Cheng Chou , Tien-I Bao , Shwang-Ming Jeng , Chen-Hua Yu
发明人： Chung-Chi Ko , Ting-Yu Shen , Keng-Chu Lin , Chia-Cheng Chou , Tien-I Bao , Shwang-Ming Jeng , Chen-Hua Yu
IPC分类号： H01L21/4763 , H01L21/768
CPC分类号： H01L21/76831 , H01L21/76826
摘要： A method for forming an integrated circuit includes forming a low-k dielectric layer over a semiconductor substrate, etching the low-k dielectric layer to form an opening, forming a dielectric barrier layer covering at least sidewalls of the opening, performing a treatment to improve a wetting ability of the dielectric barrier layer, and filling the opening with a conductive material, wherein the conductive material is in contact with the dielectric barrier layer.
摘要翻译：一种用于形成集成电路的方法包括在半导体衬底上形成低k电介质层，蚀刻低k电介质层以形成开口，形成至少覆盖开口侧壁的介电阻挡层，进行处理以改善介电阻挡层的润湿能力，并用导电材料填充开口，其中导电材料与电介质阻挡层接触。

6. 发明授权

US08652868B2 Implanting method for forming photodiode 有权
标题翻译：用于形成光电二极管的植入方法
公开(公告)号：US08652868B2
公开(公告)日：2014-02-18
申请号：US13410165
申请日：2012-03-01
申请人： Yu-Shen Shih , Ching-Hwanq Su , Wei-Ming You , Chih-Cherng Jeng , Kuo-Cheng Lee , Yen-Hsung Ho
发明人： Yu-Shen Shih , Ching-Hwanq Su , Wei-Ming You , Chih-Cherng Jeng , Kuo-Cheng Lee , Yen-Hsung Ho
IPC分类号： H01L21/00
CPC分类号： H01L31/103 , H01L31/1804 , Y02E10/547
摘要： An implanting method for forming a photodiode comprises providing a substrate with a first conductivity, growing an epitaxial layer on the substrate, implanting ions with a second conductivity in the epitaxial layer from a front side of the substrate and implanting ions with the first conductivity in the epitaxial layer from the front side of the substrate to form a photo active region adjacent to the front side and a photo inactive region underneath the photo active region. By employing the implanting method, an average doping density of the photo active region is approximately ten times more than an average doping density of the photo inactive region.
摘要翻译：用于形成光电二极管的注入方法包括提供具有第一导电性的衬底，在衬底上生长外延层，从衬底的前侧在外延层中注入具有第二导电性的离子，并将第一导电性的离子注入从衬底的前侧形成外延层以形成与前侧相邻的光有源区和在光有源区下面的光无源区。通过采用注入方法，光有源区的平均掺杂密度约为光无源区的平均掺杂密度的十倍。

7. 发明申请

US20130248756A1 AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC AND POLYSILICON FILMS 有权
标题翻译：含有氧化硅介电和多晶硅膜的化学机械抛光底材的水性抛光组合物和工艺
公开(公告)号：US20130248756A1
公开(公告)日：2013-09-26
申请号：US13991924
申请日：2011-12-07
申请人： Shyam Sundar Venkataraman , Eason Yu-Shen Su , Arend Jouke Kingma , Bastian Marten Noller
发明人： Shyam Sundar Venkataraman , Eason Yu-Shen Su , Arend Jouke Kingma , Bastian Marten Noller
IPC分类号： H01L21/306
CPC分类号： H01L21/30625 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： An aqueous polishing composition comprising (A) abrasive ceria particles and (B) amphiphilic nonionic surfactants selected water-soluble and water-dispersible, linear and branched polyoxyalkylene blockcopolymers of the general formula I: R[(B1)m/(B2)nY]p (I), wherein the indices and the variables have the following meaning: m, n, and p integers>1; R hydrogen atom or monovalent or polyvalent organic residue, except C5-C20 alkyl groups; (B1) block of oxyethylene monomer units; (B2) block of substituted oxyalkylene monomer units wherein the substituents are selected from two methyl groups, alkyl groups of more than two carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups; and Y hydrogen atom or monovalent organic residue, except C5-C20 alkyl groups; with the proviso that when (B) contains more than one block (B1) or (B2) two blocks of the same type are separated by a block of the other type.
摘要翻译：一种水性抛光组合物，其包含（A）磨料二氧化铈颗粒和（B）两亲性非离子表面活性剂，其选自水溶性和水分散性的通式I的直链和支链聚氧化烯嵌段共聚物：[（B1）m /（B2）nY] p（I），其中索引和变量具有以下含义：m，n和p整数> 1; R氢原子或一价或多价有机残基，除了C 5 -C 20烷基; （B1）氧化乙烯单体单元的嵌段; （B2）取代的氧化烯单体单元，其中取代基选自两个甲基，多于两个碳原子的烷基和环烷基，芳基，烷基 - 环烷基，烷基 - 芳基，环烷基 - 芳基和烷基 - 环烷基 - 芳基 ; 和Y氢原子或一价有机残基，除了C 5 -C 20烷基; 条件是当（B）包含多于一个块（B1）或（B2）时，两个相同类型的块由另一种类型的块分隔开。

8. 发明授权

US08241608B2 Treating allergy with detoxified E. coli heat-labile enterotoxin 有权
标题翻译：用解毒的大肠杆菌热不稳定肠毒素治疗过敏
公开(公告)号：US08241608B2
公开(公告)日：2012-08-14
申请号：US12729649
申请日：2010-03-23
申请人： Yu-Shen Hsu , Jiu-Yao Wang
发明人： Yu-Shen Hsu , Jiu-Yao Wang
IPC分类号： A61K49/00 , A61K39/02 , A61K39/00
CPC分类号： A61K39/35 , A61K39/001 , A61K2039/577
摘要： A method for treating allergy with a pharmaceutical composition containing a detoxified E. coli heat-labile enterotoxin, and, optionally, an allergen.
摘要翻译：一种用含有解毒大肠杆菌热不稳定肠毒素和任选的变应原的药物组合物治疗变态反应的方法。

9. 发明授权

US08143162B2 Interconnect structure having a silicide/germanide cap layer 有权
标题翻译：具有硅化物/锗化物覆盖层的互连结构
公开(公告)号：US08143162B2
公开(公告)日：2012-03-27
申请号：US12500796
申请日：2009-07-10
申请人： Chen-Hua Yu , Yung-Cheng Lu , Hui-Lin Chang , Ting-Yu Shen , Hung Chun Tsai
发明人： Chen-Hua Yu , Yung-Cheng Lu , Hui-Lin Chang , Ting-Yu Shen , Hung Chun Tsai
IPC分类号： H01L21/44 , H01L27/04
CPC分类号： H01L23/53238 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L21/76849 , H01L21/76856 , H01L21/76864 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure of an integrated circuit and a method for forming the same are provided. The interconnect structure includes a semiconductor substrate, a low-k dielectric layer over the semiconductor substrate, a conductor in the low-k dielectric layer, and a cap layer on the conductor. The cap layer has at least a top portion comprising a metal silicide/germanide.
摘要翻译：提供集成电路的互连结构及其形成方法。互连结构包括半导体衬底，半导体衬底上的低k电介质层，低k电介质层中的导体和导体上的覆盖层。盖层至少具有包含金属硅化物/锗化物的顶部。

10. 发明授权

US08012836B2 Semiconductor devices and methods for fabricating the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08012836B2
公开(公告)日：2011-09-06
申请号：US11528405
申请日：2006-09-28
申请人： Kuo-Chyuan Tzeng , Jian-Yu Shen , Kuo-Chi Tu , Kuo-Ching Huang , Chin-Yang Chang
发明人： Kuo-Chyuan Tzeng , Jian-Yu Shen , Kuo-Chi Tu , Kuo-Ching Huang , Chin-Yang Chang
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L27/10894
摘要： Semiconductor devices and methods for fabricating the same are provided. An exemplary embodiment of a semiconductor device comprises a substrate with a plurality of isolation structures formed therein, defining first and second areas over the substrate. A transistor is formed on a portion of the substrate in the first and second areas, respectively, wherein the transistor in the second area is formed with merely a pocket doping region in the substrate adjacent to a drain region thereof. A first dielectric layer is formed over the substrate, covering the transistor formed in the first and second areas. A plurality of first contact plugs is formed through the first dielectric layer, electrically connecting a source region and a drain region of the transistor in the second area, respectively. A second dielectric layer is formed over the first dielectric layer with a capacitor formed therein, wherein the capacitor electrically connects one of the first contact plugs.
摘要翻译：提供半导体器件及其制造方法。半导体器件的示例性实施例包括在其中形成有多个隔离结构的衬底，其在衬底上限定第一和第二区域。晶体管分别形成在第一和第二区域中的衬底的一部分上，其中第二区域中的晶体管仅在与衬底的漏极区相邻的衬底中仅形成一个凹坑掺杂区域。第一电介质层形成在衬底上，覆盖形成在第一和第二区域中的晶体管。通过第一介电层形成多个第一接触插塞，分别在第二区域中电连接晶体管的源极区域和漏极区域。在第一电介质层上形成第二电介质层，其中形成有电容器，其中电容器电连接第一接触插塞之一。

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