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1. 发明授权

US08709912B2 Semiconductor device manufacturing method and device for same 失效
标题翻译：半导体装置制造方法及装置
公开(公告)号：US08709912B2
公开(公告)日：2014-04-29
申请号：US12937434
申请日：2009-04-15
申请人： Yuichi Urano , Kenichi Kazama
发明人： Yuichi Urano , Kenichi Kazama
IPC分类号： H01L21/30
CPC分类号： H01L21/6715 , H01L21/304 , H01L21/67028 , H01L21/67046 , H01L21/67051 , H01L21/6835 , H01L2221/68327 , H01L2221/6834
摘要： Even when a substrate for treatment is joined with a supporting substrate having an outer shape larger than that of the substrate for treatment, with a photothermal conversion layer and an adhesive layer interposed, and the surface of the substrate for treatment on the side opposite this joined surface is treated, the occurrence of a defective external appearance on the treatment surface of the substrate for treatment is prevented.An adhesive layer 4 is formed on one surface of a substrate for treatment 3, a photothermal conversion layer 2 is formed on one surface of a supporting substrate 1 having a surface with an outer shape larger than that of the surface of the substrate for treatment, and the substrate for treatment 3 is bonded onto the surface of the photothermal conversion layer 2 with the adhesive layer 4 interposed, to obtain a layered member. This layered member is placed on a spin chuck 9 in a chamber 8 of a spin coater device, an alkaline aqueous solution 11 is dropped onto a portion 2a of the photothermal conversion layer 2 which protrudes from the substrate for treatment, and thereafter cleaning is performed on this portion using a high-pressure cleaning nozzle 12. Then, grinding, wet treatment, or similar treatment is performed on the surface of the substrate for treatment 3, to manufacture a semiconductor device.
摘要翻译：即使将处理用基板与外部形状大于用于处理的基板的支撑基板接合，也可以将光热转换层和粘合剂层插入，并且与该基板相反的一侧进行处理的基板的表面表面被处理，防止在用于处理的基板的处理表面上出现有缺陷的外观。在用于处理的基板3的一个表面上形成粘合剂层4，在具有大于基板表面的表面的表面的支撑基板1的一个表面上形成光热转换层2用于处理，并且将处理用基板3粘合到光热转换层2的表面上，并粘合层4插入，得到层叠体。将该分层部件放置在旋涂机装置的室8内的旋转卡盘9上，将碱性水溶液11滴落到从基板突出的光热转换层2的部分2a上进行处理，然后进行清洗在该部分上使用高压清洁喷嘴12.然后，在用于处理的基板3的表面上进行研磨，湿处理或类似的处理，以制造半导体器件。

2. 发明授权

US08518804B2 Semiconductor device manufacturing method and manufacturing apparatus 有权
标题翻译：半导体装置的制造方法和制造装置
公开(公告)号：US08518804B2
公开(公告)日：2013-08-27
申请号：US13278164
申请日：2011-10-20
申请人： Yuichi Urano
发明人： Yuichi Urano
IPC分类号： H01L21/301 , H01L21/46 , H01L21/78
CPC分类号： H01L29/66333 , H01L21/67115 , Y10T29/41
摘要： A semiconductor device manufacturing method and manufacturing apparatus with which it is possible, when a wafer has a warp, to effectively peel off an ultraviolet peelable tape with ultraviolet irradiation of a short duration. Even when a wafer has a warp, by correcting the warp of the wafer with an ultraviolet transmitting plate, and uniformly irradiating an ultraviolet peelable tape attached to the wafer with ultraviolet light, it is possible to reduce a distance between an ultraviolet light source and the ultraviolet peelable tape. Also, by blocking heat from the ultraviolet light source with the ultraviolet transmitting plate, it is possible to suppress a rise in temperature of the wafer. As a result of this, it is possible to effectively peel the ultraviolet peelable tape from the wafer with ultraviolet irradiation of a short duration without any adhesive residue remaining.
摘要翻译：一种半导体器件制造方法和制造装置，当晶片具有翘曲时，可以用短时间的紫外线照射有效地剥离紫外线剥离带。即使当晶片具有翘曲时，通过用紫外线透射板校正晶片的翘曲，并且用紫外线均匀地照射安装在晶片上的紫外线剥离带，可以减少紫外光源和紫外线剥离胶带此外，通过用紫外线透射板阻挡来自紫外线光源的热量，可以抑制晶片的温度上升。结果，可以用短时间的紫外线照射有效地将紫外线剥离带从晶片上剥离，而不会残留残留的粘合剂残留物。

3. 发明授权

US5854120A Semiconductor device manufacturing method 失效
公开(公告)号：US5854120A
公开(公告)日：1998-12-29
申请号：US769031
申请日：1996-12-17
申请人： Yuichi Urano , Masato Nishizawa , Yoshiyuki Sakai , Naoki Ito , Shinichi Hashimoto
发明人： Yuichi Urano , Masato Nishizawa , Yoshiyuki Sakai , Naoki Ito , Shinichi Hashimoto
IPC分类号： H01L21/02 , H01L21/76 , H01L21/762 , H01L27/08 , H01L27/12
CPC分类号： H01L21/7624 , H01L21/76264 , H01L21/76281 , H01L21/76286 , Y10S438/92
摘要： A polysilicon film is deposited in a trench formed in a silicon element substrate. The polysilicon film in the trench and on the silicon element substrate is anisotropically etched, so that the film remains on the side wall of the trench. The polysilicon film on the side wall is oxidized to obtain an insulating film, which buries the trench. At the same time, an oxidized film is formed on the surface of the silicon element substrate to complete a trench-mold separation area.

4. 发明申请

US20100240213A1 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100240213A1
公开(公告)日：2010-09-23
申请号：US12659816
申请日：2010-03-22
申请人： Yuichi Urano , Takayasu Horasawa
发明人： Yuichi Urano , Takayasu Horasawa
IPC分类号： H01L21/283 , H01L21/285
CPC分类号： H01L29/66712 , H01L21/288 , H01L21/32134 , H01L29/456 , H01L29/66333
摘要： A method of manufacturing a semiconductor device on a semiconductor substrate, includes the steps of forming a first metal film on a front surface of the semiconductor substrate; forming a second metal film on the surface of the first metal film; activating a surface of the second metal film to provide an activated surface; and forming a plated film on the activated surface by a wet plating method in a plating bath that includes a reducing agent that is oxidized during plating and that has a rate of oxidation, wherein the second metal film is a metal film mainly composed of a first substance that enhances the rate of oxidation of the reducing agent in the plating bath. Wet plating is preferably an electroless process.
摘要翻译：一种在半导体衬底上制造半导体器件的方法，包括在半导体衬底的前表面上形成第一金属膜的步骤; 在所述第一金属膜的表面上形成第二金属膜; 激活所述第二金属膜的表面以提供活化表面; 以及在电镀槽中通过湿式电镀法在活化表面上形成镀膜，所述镀液包括在电镀期间被氧化并具有氧化速率的还原剂，其中所述第二金属膜是主要由第一提高电镀浴中还原剂的氧化速率的物质。湿法电镀优选为无电解方法。

5. 发明授权

US08492256B2 Method of manufacturing semiconductor apparatus 有权
标题翻译：半导体装置的制造方法
公开(公告)号：US08492256B2
公开(公告)日：2013-07-23
申请号：US13084603
申请日：2011-04-12
申请人： Yuichi Urano
发明人： Yuichi Urano
IPC分类号： H01L21/20
CPC分类号： H01L21/6836 , H01L23/3107 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2221/68372 , H01L2221/68386 , H01L2224/03464 , H01L2224/0381 , H01L2224/04026 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/05571 , H01L2224/05644 , H01L2224/0603 , H01L2224/06181 , H01L2224/29111 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48644 , H01L2224/48699 , H01L2224/73215 , H01L2224/73265 , H01L2224/741 , H01L2224/93 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01043 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/3511 , H01L2224/03 , H01L2924/01015 , H01L2924/00012 , H01L2924/00014 , H01L2924/00 , H01L2224/48744 , H01L2224/05552
摘要： A method of manufacturing a semiconductor apparatus includes forming back surface electrode 4 on back surface of semiconductor wafer 20, that bends convexly toward the front surface side due to back surface electrode 4 being formed; treating the back surface with a plasma for removing the deposits on the back surface; sticking removable adhesive tape 23 to the back surface along the warp thereof for maintaining the bending state of semiconductor wafer 20 after the step of sticking; electrolessly plating to form film 26 on the front surface of semiconductor wafer 20; peeling off removable adhesive tape 23; cutting out semiconductor chips; and mounting the semiconductor chip by bonding with a solder for manufacturing a semiconductor apparatus. The manufacturing method prevents external appearance anomalies from occurring on the back surface electrode, improves the reliability, and allows manufacture of the semiconductor apparatuses with a high throughput of non-defective products.
摘要翻译：制造半导体装置的方法包括在半导体晶片20的背面形成背面电极4，该背面电极4由于形成背面电极4而朝前表面侧凸出; 用等离子体处理后表面以去除背面上的沉积物; 将可移除的胶带23沿其翘曲粘附到后表面，以在粘附步骤之后保持半导体晶片20的弯曲状态; 无电镀以在半导体晶片20的前表面上形成薄膜26; 剥去可拆卸胶带23; 切出半导体芯片; 以及通过与用于制造半导体装置的焊料接合来安装半导体芯片。制造方法防止在背面电极上发生外观异常，提高可靠性，并且可以制造具有高产量的无缺陷产品的半导体装置。

6. 发明申请

US20120100639A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND MANUFACTURING APPARATUS 有权
标题翻译：半导体器件制造方法和制造设备
公开(公告)号：US20120100639A1
公开(公告)日：2012-04-26
申请号：US13278164
申请日：2011-10-20
申请人： Yuichi URANO
发明人： Yuichi URANO
IPC分类号： H01L21/02 , H01L21/30
CPC分类号： H01L29/66333 , H01L21/67115 , Y10T29/41
摘要： A semiconductor device manufacturing method and manufacturing apparatus with which it is possible, when a wafer has a warp, to effectively peel off an ultraviolet peelable tape with ultraviolet irradiation of a short duration. Even when a wafer has a warp, by correcting the warp of the wafer with an ultraviolet transmitting plate, and uniformly irradiating an ultraviolet peelable tape attached to the wafer with ultraviolet light, it is possible to reduce a distance between an ultraviolet light source and the ultraviolet peelable tape. Also, by blocking heat from the ultraviolet light source with the ultraviolet transmitting plate, it is possible to suppress a rise in temperature of the wafer. As a result of this, it is possible to effectively peel the ultraviolet peelable tape from the wafer with ultraviolet irradiation of a short duration without any adhesive residue remaining.
摘要翻译：一种半导体器件制造方法和制造装置，当晶片具有翘曲时，可以用短时间的紫外线照射有效地剥离紫外线剥离带。即使当晶片具有翘曲时，通过用紫外线透射板校正晶片的翘曲，并且用紫外线均匀地照射安装在晶片上的紫外线剥离带，可以减少紫外光源和紫外线剥离胶带此外，通过用紫外线透射板阻挡来自紫外线光源的热量，可以抑制晶片的温度上升。结果，可以用短时间的紫外线照射有效地将紫外线剥离带从晶片上剥离，而不会残留残留的粘合剂残留物。

7. 发明申请

US20110256668A1 METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110256668A1
公开(公告)日：2011-10-20
申请号：US13084603
申请日：2011-04-12
申请人： Yuichi URANO
发明人： Yuichi URANO
IPC分类号： H01L21/50 , H01L21/28
CPC分类号： H01L21/6836 , H01L23/3107 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2221/68372 , H01L2221/68386 , H01L2224/03464 , H01L2224/0381 , H01L2224/04026 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/05571 , H01L2224/05644 , H01L2224/0603 , H01L2224/06181 , H01L2224/29111 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48644 , H01L2224/48699 , H01L2224/73215 , H01L2224/73265 , H01L2224/741 , H01L2224/93 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01043 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/3511 , H01L2224/03 , H01L2924/01015 , H01L2924/00012 , H01L2924/00014 , H01L2924/00 , H01L2224/48744 , H01L2224/05552
摘要： A method of manufacturing a semiconductor apparatus includes forming back surface electrode 4 on back surface of semiconductor wafer 20, that bends convexly toward the front surface side due to back surface electrode 4 being formed; treating the back surface with a plasma for removing the deposits on the back surface; sticking removable adhesive tape 23 to the back surface along the warp thereof for maintaining the bending state of semiconductor wafer 20 after the step of sticking; electrolessly plating to form film 26 on the front surface of semiconductor wafer 20; peeling off removable adhesive tape 23; cutting out semiconductor chips; and mounting the semiconductor chip by bonding with a solder for manufacturing a semiconductor apparatus. The manufacturing method prevents external appearance anomalies from occurring on the back surface electrode, improves the reliability, and allows manufacture of the semiconductor apparatuses with a high throughput of non-defective products.
摘要翻译：制造半导体装置的方法包括在半导体晶片20的背面形成背面电极4，该背面电极4由于形成背面电极4而朝前表面侧凸出; 用等离子体处理后表面以去除背面上的沉积物; 将可移除的胶带23沿其翘曲粘附到后表面，以在粘附步骤之后保持半导体晶片20的弯曲状态; 无电镀以在半导体晶片20的前表面上形成薄膜26; 剥去可拆卸胶带23; 切出半导体芯片; 以及通过与用于制造半导体装置的焊料接合来安装半导体芯片。制造方法防止在背面电极上发生外观异常，提高可靠性，并且可以制造具有高产量的无缺陷产品的半导体装置。

8. 发明授权

US08198104B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08198104B2
公开(公告)日：2012-06-12
申请号：US12659816
申请日：2010-03-22
申请人： Yuichi Urano , Takayasu Horasawa
发明人： Yuichi Urano , Takayasu Horasawa
IPC分类号： H01L21/00
CPC分类号： H01L29/66712 , H01L21/288 , H01L21/32134 , H01L29/456 , H01L29/66333
摘要： A method of manufacturing a semiconductor device on a semiconductor substrate, includes the steps of forming a first metal film on a front surface of the semiconductor substrate; forming a second metal film on the surface of the first metal film; activating a surface of the second metal film to provide an activated surface; and forming a plated film on the activated surface by a wet plating method in a plating bath that includes a reducing agent that is oxidized during plating and that has a rate of oxidation, wherein the second metal film is a metal film mainly composed of a first substance that enhances the rate of oxidation of the reducing agent in the plating bath. Wet plating is preferably an electroless process.
摘要翻译：一种在半导体衬底上制造半导体器件的方法，包括在半导体衬底的前表面上形成第一金属膜的步骤; 在所述第一金属膜的表面上形成第二金属膜; 激活第二金属膜的表面以提供活化表面; 以及在电镀槽中通过湿式电镀法在活化表面上形成镀膜，所述镀液包括在电镀期间被氧化并具有氧化速率的还原剂，其中所述第二金属膜是主要由第一提高电镀浴中还原剂的氧化速率的物质。湿法电镀优选为无电解方法。

9. 发明申请

US20110129989A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND DEVICE FOR SAME 失效
标题翻译：半导体器件制造方法及其器件
公开(公告)号：US20110129989A1
公开(公告)日：2011-06-02
申请号：US12937434
申请日：2009-04-15
申请人： Yuichi Urano , Kenichi Kazama
发明人： Yuichi Urano , Kenichi Kazama
IPC分类号： H01L21/762 , B08B3/00
CPC分类号： H01L21/6715 , H01L21/304 , H01L21/67028 , H01L21/67046 , H01L21/67051 , H01L21/6835 , H01L2221/68327 , H01L2221/6834
摘要： Even when a substrate for treatment is joined with a supporting substrate having an outer shape larger than that of the substrate for treatment, with a photothermal conversion layer and an adhesive layer interposed, and the surface of the substrate for treatment on the side opposite this joined surface is treated, the occurrence of a defective external appearance on the treatment surface of the substrate for treatment is prevented.An adhesive layer 4 is formed on one surface of a substrate for treatment 3, a photothermal conversion layer 2 is formed on one surface of a supporting substrate 1 having a surface with an outer shape larger than that of the surface of the substrate for treatment, and the substrate for treatment 3 is bonded onto the surface of the photothermal conversion layer 2 with the adhesive layer 4 interposed, to obtain a layered member. This layered member is placed on a spin chuck 9 in a chamber 8 of a spin coater device, an alkaline aqueous solution 11 is dropped onto a portion 2a of the photothermal conversion layer 2 which protrudes from the substrate for treatment, and thereafter cleaning is performed on this portion using a high-pressure cleaning nozzle 12. Then, grinding, wet treatment, or similar treatment is performed on the surface of the substrate for treatment 3, to manufacture a semiconductor device.
摘要翻译：即使将处理用基板与外部形状大于用于处理的基板的支撑基板接合，也可以将光热转换层和粘合剂层插入，并且与该基板相反的一侧进行处理的基板的表面表面被处理，防止在用于处理的基板的处理表面上出现有缺陷的外观。在用于处理的基板3的一个表面上形成粘合剂层4，在具有大于基板表面的表面的表面的支撑基板1的一个表面上形成光热转换层2用于处理，并且将处理用基板3粘合到光热转换层2的表面上，并粘合层4插入，得到层叠体。将该分层部件放置在旋涂机装置的室8内的旋转卡盘9上，将碱性水溶液11滴落到从基板突出的光热转换层2的部分2a处理后，进行清洗在该部分上使用高压清洁喷嘴12.然后，在用于处理的基板3的表面上进行研磨，湿处理或类似的处理，以制造半导体器件。

10. 发明授权

US07947586B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07947586B2
公开(公告)日：2011-05-24
申请号：US12700044
申请日：2010-02-04
申请人： Yuichi Urano
发明人： Yuichi Urano
IPC分类号： H01L21/20
CPC分类号： H01L21/288 , C25D5/028 , C25D7/12 , H01L29/66333 , H01L29/7395
摘要： A method of manufacturing a semiconductor device is disclosed, wherein a plating layer is formed on a first surface side of a semiconductor substrate stably and at a low cost, while preventing the plating liquid from being contaminated and avoiding deposition of uneven plating layer on a second surface side. An electrode is formed on the first surface of the semiconductor substrate, and another electrode is formed on the second surface. A curing resin is applied on the electrode on the second surface and a film is stuck on the curing resin, and the curing resin is then cured. After that, a plating process is conducted on the first surface. The film and the curing resin are then peeled off.
摘要翻译：公开了一种制造半导体器件的方法，其中在半导体衬底的第一表面侧上以稳定且低成本的方式形成镀层，同时防止电镀液被污染，并避免在第二层上沉积不均匀的镀层表面在半导体衬底的第一表面上形成电极，在第二表面上形成另一电极。将固化树脂施加在第二表面上的电极上，并将膜粘附在固化树脂上，然后固化固化树脂。之后，在第一面上进行电镀处理。然后将膜和固化树脂剥离。

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