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    • 3. 发明授权
    • EL device and making method
    • EL器件及制作方法
    • US06677059B2
    • 2004-01-13
    • US09866698
    • 2001-05-30
    • Yukihiko ShirakawaMasashi MiwaKatsuto Nagano
    • Yukihiko ShirakawaMasashi MiwaKatsuto Nagano
    • H05B3322
    • H05B33/10H05B33/22Y10S428/917
    • The invention aims to solve the problem of prior art EL devices that undesirable defects form in dielectric layers, and especially the problems of EL devices having dielectric layers of lead-base dielectric material including a lowering, variation and change with time of the luminance of light emission, and thereby provide an EL device ensuring high display quality and a method for manufacturing the same at a low cost. Such objects are achieved by an EL device comprising at least an electrically insulating substrate (11) and a structure including an electrode layer (12), a dielectric layer (13, 14, 15), a light emitting layer (17) and a transparent electrode layer (19) stacked on the substrate (11), wherein the dielectric layer is a laminate including a first thick-film ceramic high-permittivity dielectric layer (13) whose composition contains at least lead, a second high-permittivity layer (14) whose composition contains at least lead, and a third high-permittivity layer (15) whose composition is free of at least lead.
    • 本发明的目的在于解决电介质层中形成不良缺陷的现有技术的EL器件的问题,特别是具有包括降低,随着光的亮度随时间的变化的铅基电介质材料的电介质层的EL器件的问题 从而提供确保高显示质量的EL器件及其低成本的制造方法。 这样的目的通过一种EL器件来实现,EL器件至少包括一个电绝缘衬底(11)和包括电极层(12),介电层(13,14,15),发光层(17)和透明 层叠在所述基板(11)上的电极层(19),其中,所述电介质层是包含第一厚膜陶瓷高电容率介电层(13)的层压体,所述第一厚膜陶瓷高介电常数层(13)的组成至少含有铅,第二高电容率层 ),其组成至少含有铅,第三高电容率层(15)的组成至少不含铅。
    • 6. 发明授权
    • High-voltage feed-through capacitor and magnetron
    • 高压直流电容器和磁控管
    • US07184256B1
    • 2007-02-27
    • US11444493
    • 2006-06-01
    • Tsukasa SatoYukihiko ShirakawaIsao FujiwaraHisashi Tanaka
    • Tsukasa SatoYukihiko ShirakawaIsao FujiwaraHisashi Tanaka
    • H01G4/35H01G4/236
    • H01G4/35H01G4/236
    • A high-voltage feed-through capacitor includes: a capacitor element; a grounding metal fitting; an insulating resin; two through conductors; an insulating cover; and an insulating tube. The capacitor element has two separate electrodes on one side and one common electrode on the other side and is mounted on one side of the grounding metal fitting with the common electrode being connected to the same side of the grounding metal fitting. The insulating resin fills a space inside the capacitor element. Each through conductor has a rod-like conductor portion passing through the grounding metal fitting and the capacitor element and connected to the separate electrode. At least a portion of the insulating tube is attached to the rod-like conductor portion within the capacitor element. The insulating cover is attached to the rod-like conductor portion to have one end thereof in contact with one end of the insulating tube.
    • 高压直流电容器包括:电容器元件; 接地金属配件; 绝缘树脂; 两根导线; 绝缘盖; 和绝缘管。 电容器元件在一侧具有两个单独的电极,另一侧具有一个公共电极,并且安装在接地金属配件的一侧,公共电极连接到接地金属配件的同一侧。 绝缘树脂填充电容器元件内的空间。 每个贯通导体具有穿过接地金属配件和电容器元件并连接到单独电极的棒状导体部分。 绝缘管的至少一部分附接到电容器元件内的棒状导体部分。 绝缘盖附接到杆状导体部分,以使其一端与绝缘管的一端接触。
    • 8. 发明授权
    • Thin-film EL device, and its fabrication process
    • 薄膜EL器件及其制造工艺
    • US06809474B2
    • 2004-10-26
    • US09866732
    • 2001-05-30
    • Yukihiko Shirakawa
    • Yukihiko Shirakawa
    • H01J162
    • H05B33/22H05B33/10
    • The invention has for its object to provide, without incurring any cost increase, a thin-film EL device in which a dielectric layer is corrected for non-flat portions to have a smooth surface, thereby ensuring enhanced display quality, and its fabrication process. This object is achieved by the provision of a thin-film EL device having at least a structure comprising an electrically insulating substrate (11), a lower electrode layer (12) stacked on the substrate according to a given pattern, a multilayer dielectric layer (13) formed thereon by repeating a solution coating-and-firing step plural times, and a light-emitting layer (14), a thin-film insulator layer (15) and a transparent electrode layer (16) stacked on the dielectric layer. The multilayer dielectric layer has a thickness of at least four times as large as a thickness of the electrode layer and 4 &mgr;m to 16 &mgr;m inclusive. The fabrication process is also provided.
    • 本发明的目的是提供一种薄膜EL器件,其中电介质层被校正为非平坦部分以具有光滑表面,从而确保增强的显示质量及其制造工艺。 该目的通过提供一种具有至少一种结构的薄膜EL器件来实现,该薄膜EL器件至少包括根据给定图案堆叠在衬底上的电绝缘衬底(11),下电极层(12),多层电介质层 13)通过重复多次溶剂涂覆和烧制步骤而形成,以及堆叠在电介质层上的发光层(14),薄膜绝缘体层(15)和透明电极层(16)。 多层电介质层的厚度为电极层的厚度的4倍以上,4μm〜16μm的厚度。 还提供了制造工艺。
    • 10. 发明授权
    • Thin-film EL device, and its fabrication process
    • 薄膜EL器件及其制造工艺
    • US06650046B2
    • 2003-11-18
    • US09988141
    • 2001-11-19
    • Yukihiko ShirakawaMasashi MiwaKatsuto NaganoYoshihiko Yano
    • Yukihiko ShirakawaMasashi MiwaKatsuto NaganoYoshihiko Yano
    • H05B3322
    • H05B33/22H05B33/10Y10S428/917
    • The invention aims to provide, without incurring any cost increase, a thin-film EL device comprising a multilayer dielectric layer formed of a lead-based dielectric material by a solution coating-and-firing process, which has solved problems including light emission luminance drops, luminance variations and changes of light emission luminance with time, thereby achieving high display quality, and a process for the fabrication of the same. The object is accomplished by forming a patterned electrode layer on an electrically insulating substrate and constructing thereon a dielectric layer having a multilayer structure wherein lead-based dielectric layers formed by repeating the solution coating-and-firing process plural times and a non-lead-based, high-permittivity dielectric layer are stacked, the uppermost surface layer of the dielectric layer having a multilayer structure being the non-lead-based, high-permittivity dielectric layer.
    • 本发明的目的在于提供一种薄膜EL器件,其包括通过溶液涂覆 - 焙烧工艺由铅基电介质材料形成的多层电介质层,其解决了包括发光亮度下降的问题 ,亮度变化和发光亮度随时间的变化,从而实现高显示质量,以及其制造方法。 该目的通过在电绝缘基板上形成图案化的电极层并在其上形成具有多层结构的电介质层来实现,其中通过多次重复溶液涂覆和烧制工艺形成的基于铅的电介质层和非引线电介质层, 层叠高介电常数介电层的情况下,具有多层结构的电介质层的最表面层为非铅系高电介质层。