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1. 发明申请

US20140077327A1 MONOLITHIC THREE TERMINAL PHOTODETECTOR 有权
标题翻译：单声道三端子光电摄影机
公开(公告)号：US20140077327A1
公开(公告)日：2014-03-20
申请号：US13899896
申请日：2013-05-22
申请人： Yun-chung N. NA , Yimin KANG
发明人： Yun-chung N. NA , Yimin KANG
IPC分类号： H01L31/02 , H01L31/105
CPC分类号： H01L31/02005 , G02B6/4295 , G02B2006/12097 , H01L31/028 , H01L31/105 , H01L31/1075 , Y02E10/547
摘要： Photodetectors operable to achieve multiplication of photogenerated carriers at ultralow voltages. Embodiments include a first p-i-n semiconductor junction combined with a second p-i-n semiconductor junction to form a monolithic photodetector having at least three terminals. The two p-i-n structures may share either the p-type region or the n-type region as a first terminal. Regions of the two p-i-n structures doped complementary to that of the shared terminal form second and third terminals so that the first and second p-i-n structures are operable in parallel. A multiplication region of the first p-i-n structure is to multiply charge carriers photogenerated within an absorption region of the second p-i-n structure with voltage drops between the shared first terminal and each of the second and third terminals being noncumulative.
摘要翻译：光电检测器可操作以实现超低电压下的光生载流子的倍增。实施例包括与第二p-i-n半导体结组合的第一p-i-n半导体结，以形成具有至少三个端子的单片光电检测器。两个p-i-n结构可以共享p型区域或n型区域作为第一端子。掺杂与共享终端的两个p-i-n结构的区域形成第二和第三端子，使得第一和第二p-i-n结构可并行操作。第一p-i-n结构的乘法区域是在共享的第一端子和第二和第三端子的每一个之间的电压降是不累积的，以使在第二p-i-n结构的吸收区域内产生的电荷载流倍增。

2. 发明授权

US08461624B2 Monolithic three terminal photodetector 有权
标题翻译：单片三端子光电探测器
公开(公告)号：US08461624B2
公开(公告)日：2013-06-11
申请号：US12952023
申请日：2010-11-22
申请人： Yun-chung N Na , Yimin Kang
发明人： Yun-chung N Na , Yimin Kang
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L31/02005 , G02B6/4295 , G02B2006/12097 , H01L31/028 , H01L31/105 , H01L31/1075 , Y02E10/547
摘要： Photodetectors operable to achieve multiplication of photogenerated carriers at ultralow voltages. Embodiments include a first p-i-n semiconductor junction combined with a second p-i-n semiconductor junction to form a monolithic photodetector having at least three terminals. The two p-i-n structures may share either the p-type region or the n-type region as a first terminal. Regions of the two p-i-n structures doped complementary to that of the shared terminal form second and third terminals so that the first and second p-i-n structures are operable in parallel. A multiplication region of the first p-i-n structure is to multiply charge carriers photogenerated within an absorption region of the second p-i-n structure with voltage drops between the shared first terminal and each of the second and third terminals being noncumulative.
摘要翻译：光电检测器可操作以实现超低电压下的光生载流子的倍增。实施例包括与第二p-i-n半导体结组合的第一p-i-n半导体结，以形成具有至少三个端子的单片光电检测器。两个p-i-n结构可以共享p型区域或n型区域作为第一端子。掺杂与共享终端的两个p-i-n结构的区域形成第二和第三端子，使得第一和第二p-i-n结构可并行操作。第一p-i-n结构的乘法区域是在共享的第一端子和第二和第三端子的每一个之间的电压降是不累积的，以使在第二p-i-n结构的吸收区域内产生的电荷载流倍增。

3. 发明申请

US20120126286A1 MONOLITHIC THREE TERMINAL PHOTODETECTOR 有权
标题翻译：单声道三端子光电摄影机
公开(公告)号：US20120126286A1
公开(公告)日：2012-05-24
申请号：US12952023
申请日：2010-11-22
申请人： Yun-chung N. Na , Yimin Kang
发明人： Yun-chung N. Na , Yimin Kang
IPC分类号： H01L31/107 , G01J1/18
CPC分类号： H01L31/02005 , G02B6/4295 , G02B2006/12097 , H01L31/028 , H01L31/105 , H01L31/1075 , Y02E10/547
摘要： Photodetectors operable to achieve multiplication of photogenerated carriers at ultralow voltages. Embodiments include a first p-i-n semiconductor junction combined with a second p-i-n semiconductor junction to form a monolithic photodetector having at least three terminals. The two p-i-n structures may share either the p-type region or the n-type region as a first terminal. Regions of the two p-i-n structures doped complementary to that of the shared terminal form second and third terminals so that the first and second p-i-n structures are operable in parallel. A multiplication region of the first p-i-n structure is to multiply charge carriers photogenerated within an absorption region of the second p-i-n structure with voltage drops between the shared first terminal and each of the second and third terminals being noncumulative.
摘要翻译：光电检测器可操作以实现超低电压下的光生载流子的倍增。实施例包括与第二p-i-n半导体结组合的第一p-i-n半导体结，以形成具有至少三个端子的单片光电检测器。两个p-i-n结构可以共享p型区域或n型区域作为第一端子。掺杂与共享终端的两个p-i-n结构的区域形成第二和第三端子，使得第一和第二p-i-n结构可并行操作。第一p-i-n结构的乘法区域是在共享的第一端子和第二和第三端子的每一个之间的电压降是不累积的，以使在第二p-i-n结构的吸收区域内产生的电荷载流倍增。

4. 发明授权

US08625942B2 Efficient silicon-on-insulator grating coupler 有权
标题翻译：高效硅绝缘体上光栅耦合器
公开(公告)号：US08625942B2
公开(公告)日：2014-01-07
申请号：US13075949
申请日：2011-03-30
申请人： Yun-Chung N. Na , Haisheng Rong
发明人： Yun-Chung N. Na , Haisheng Rong
IPC分类号： G02B6/34 , G02B6/26 , G02B6/42
CPC分类号： G01M11/00 , G02B6/1228 , G02B6/124
摘要： An efficient grating coupler for a semiconductor optical mode includes a tapered edge to couple light between waveguide modes constrained by differing waveguide thicknesses. An optical circuit or laser has a waveguide in a rib or strip waveguide section that is of different height (e.g., having different vertical constraints) than a waveguide section that has a grating coupler through which light passes off-circuit. The tapered edge can couple light between the two waveguide sections with very low loss and back-reflection. The low loss and minimal back-reflection enables testing of the photonics circuit on a wafer level, and improved performance through the grating coupler.
摘要翻译：用于半导体光学模式的有效的光栅耦合器包括锥形边缘，以在由不同波导厚度约束的波导模之间耦合光。光学电路或激光器具有与具有不同高度（例如，具有不同的垂直约束）的肋条或带状波导部分中的波导，该波导部分具有光通过偏光的光栅耦合器。锥形边缘可以以非常低的损耗和背反射在两个波导部分之间耦合光。低损耗和最小的背反射使得能够在晶片级上测试光子电路，并通过光栅耦合器改善性能。

5. 发明授权

US08437585B2 Low-cost passive optical waveguide using Si substrate 有权
标题翻译：采用Si衬底的低成本无源光波导
公开(公告)号：US08437585B2
公开(公告)日：2013-05-07
申请号：US12962223
申请日：2010-12-07
申请人： Yun-Chung N. Na
发明人： Yun-Chung N. Na
IPC分类号： G02B6/10 , G02B6/12 , G02B6/30 , H01L21/302 , B29D11/00 , B32B38/06 , B32B38/10
CPC分类号： G02B6/12002 , G02B6/12004 , G02B6/13 , G02B6/136 , G02B2006/12061
摘要： A passive optical waveguide is solely built on a Si substrate while still maintaining high optical quality. Two side-by-side diamond shaped cavities may be etched into the Si wafer and oxide grown on the inner walls of the cavities until the oxide meets at opposing inner vertices of the diamond shaped cavities. An optical waveguide is formed by the inverted, generally triangular cross-sectional, portion of silicon remaining between the top surface of the wafer and the opposing inner vertices.
摘要翻译：无源光波导仅在Si衬底上构建，同时仍然保持高的光学质量。可以将两个并排的菱形空腔蚀刻到Si晶片中，并且生长在空腔的内壁上的氧化物直到氧化物在菱形腔的相对的内部顶点处相遇。光波导由剩余在晶片的顶表面和相对的内顶点之间的硅的倒置的，大致三角形的横截面的部分形成。

6. 发明申请

US20120138568A1 LOW-COST PASSIVE OPTICAL WAVEGUIDE USING SI SUBSTRATE 有权
标题翻译：低成本无源光波导使用SI基板
公开(公告)号：US20120138568A1
公开(公告)日：2012-06-07
申请号：US12962223
申请日：2010-12-07
申请人： Yun-Chung N. Na
发明人： Yun-Chung N. Na
IPC分类号： B05D3/10 , H01S3/00 , G01J1/04 , G02F1/035 , B05D5/06
CPC分类号： G02B6/12002 , G02B6/12004 , G02B6/13 , G02B6/136 , G02B2006/12061
摘要： A passive optical waveguide is solely built on a Si substrate while still maintaining high optical quality. Two side-by-side diamond shaped cavities may be etched into the Si wafer and oxide grown on the inner walls of the cavities until the oxide meets at opposing inner vertices of the diamond shaped cavities. An optical waveguide is formed by the inverted, generally triangular cross-sectional, portion of silicon remaining between the top surface of the wafer and the opposing inner vertices.
摘要翻译：无源光波导仅在Si衬底上构建，同时仍然保持高的光学质量。可以将两个并排的菱形空腔蚀刻到Si晶片中，并且生长在空腔的内壁上的氧化物直到氧化物在菱形腔的相对的内部顶点处相遇。光波导由剩余在晶片的顶表面和相对的内顶点之间的硅的倒置的，大致三角形的横截面的部分形成。

7. 发明授权

US08723221B2 Monolithic three terminal photodetector 有权
标题翻译：单片三端子光电探测器
公开(公告)号：US08723221B2
公开(公告)日：2014-05-13
申请号：US13899896
申请日：2013-05-22
申请人： Yun-chung N. Na , Yimin Kang
发明人： Yun-chung N. Na , Yimin Kang
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L31/02005 , G02B6/4295 , G02B2006/12097 , H01L31/028 , H01L31/105 , H01L31/1075 , Y02E10/547
摘要： Photodetectors operable to achieve multiplication of photogenerated carriers at ultralow voltages. Embodiments include a first p-i-n semiconductor junction combined with a second p-i-n semiconductor junction to form a monolithic photodetector having at least three terminals. The two p-i-n structures may share either the p-type region or the n-type region as a first terminal. Regions of the two p-i-n structures doped complementary to that of the shared terminal form second and third terminals so that the first and second p-i-n structures are operable in parallel. A multiplication region of the first p-i-n structure is to multiply charge carriers photogenerated within an absorption region of the second p-i-n structure with voltage drops between the shared first terminal and each of the second and third terminals being noncumulative.
摘要翻译：光电检测器可操作以实现超低电压下的光生载流子的倍增。实施例包括与第二p-i-n半导体结组合的第一p-i-n半导体结，以形成具有至少三个端子的单片光电检测器。两个p-i-n结构可以共享p型区域或n型区域作为第一端子。掺杂与共享终端的两个p-i-n结构的区域形成第二和第三端子，使得第一和第二p-i-n结构可并行操作。第一p-i-n结构的乘法区域是在共享的第一端子和第二和第三端子的每一个之间的电压降是不累积的，以使在第二p-i-n结构的吸收区域内产生的电荷载流倍增。

8. 发明申请

US20120250007A1 Efficient Silicon-On-Insulator Grating Coupler 有权
标题翻译：高效硅绝缘光栅耦合器
公开(公告)号：US20120250007A1
公开(公告)日：2012-10-04
申请号：US13075949
申请日：2011-03-30
申请人： Yun-Chung N. Na , Haisheng Rong
发明人： Yun-Chung N. Na , Haisheng Rong
IPC分类号： G02B6/34 , H01L21/66 , G01N21/00
CPC分类号： G01M11/00 , G02B6/1228 , G02B6/124
摘要： An efficient grating coupler for a semiconductor optical mode includes a tapered edge to couple light between waveguide modes constrained by differing waveguide thicknesses. An optical circuit or laser has a waveguide in a rib or strip waveguide section that is of different height (e.g., having different vertical constraints) than a waveguide section that has a grating coupler through which light passes off-circuit. The tapered edge can couple light between the two waveguide sections with very low loss and back-reflection. The low loss and minimal back-reflection enables testing of the photonics circuit on a wafer level, and improved performance through the grating coupler.
摘要翻译：用于半导体光学模式的有效的光栅耦合器包括锥形边缘，以在由不同波导厚度约束的波导模之间耦合光。光学电路或激光器具有与具有不同高度（例如，具有不同的垂直约束）的肋条或带状波导部分中的波导，该波导部分具有光通过偏光的光栅耦合器。锥形边缘可以以非常低的损耗和背反射在两个波导部分之间耦合光。低损耗和最小的背反射使得能够在晶片级上测试光子电路，并通过光栅耦合器改善性能。

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