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1. 发明授权

US07705425B2 Solid-state high power device and method 有权
标题翻译：固态大功率器件及方法
公开(公告)号：US07705425B2
公开(公告)日：2010-04-27
申请号：US11498665
申请日：2006-08-02
申请人： Zhenqiang Ma , Ningyue Jiang
发明人： Zhenqiang Ma , Ningyue Jiang
IPC分类号： H01L29/70
CPC分类号： H01L29/42304 , H01L29/0692 , H01L29/41708 , H01L29/73 , H01L29/7304 , H01L29/7378
摘要： A high-power solid-state transistor structure comprised of a plurality of emitter or gate fingers arranged in a uniform or non-uniform manner to provide improved high power performance is disclosed. Each of the fingers is associated with a corresponding one of a plurality of sub-cells. In an exemplary embodiment, the fingers may be arranged in a 1-D or 2-D form having a “hollow-center” layout where one or more elongated emitter fingers or subcells are left out during design or disconnected during manufacture. In another exemplary embodiment, the fingers may be arranged in a 1-D or 2-D form having one or more “arc-shaped” rows that includes one or more elongated emitter fingers or subcells. The structure can be practically implemented and the absolute thermal stability can be maintained for very high power transistors with reduced adverse effects due to random variation in the manufacturing and design process.
摘要翻译：公开了一种由均匀或不均匀布置的多个发射极或栅极指状构成的高功率固态晶体管结构，以提供改进的高功率性能。每个手指与多个子单元中的对应的一个子单元相关联。在示例性实施例中，手指可以以具有“空心中心”布局的1-D或2-D形式布置，其中一个或多个细长的发射器指状物或子电池在制造期间在设计期间被排除或在制造期间断开。在另一示例性实施例中，手指可以以具有一个或多个“弧形”行的1-D或2-D形式布置，其包括一个或多个细长的发射器指状物或子电池。该结构可以实际实现，并且由于制造和设计过程中的随机变化，对于具有降低的不利影响的非常高功率晶体管可以保持绝对热稳定性。

2. 发明申请

US20080315253A1 FRONT AND BACKSIDE PROCESSED THIN FILM ELECTRONIC DEVICES 有权
标题翻译：前置和后置处理薄膜电子设备
公开(公告)号：US20080315253A1
公开(公告)日：2008-12-25
申请号：US12042066
申请日：2008-03-04
申请人： Hao-Chih Yuan , Guogong Wang , Mark A. Eriksson , Paul G. Evans , Max G. Lagally , Zhenqiang Ma
发明人： Hao-Chih Yuan , Guogong Wang , Mark A. Eriksson , Paul G. Evans , Max G. Lagally , Zhenqiang Ma
IPC分类号： H01L27/088 , H01L29/786 , H01L29/737 , H01L27/092
CPC分类号： H01L27/1266 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L29/66772 , H01L29/78648
摘要： This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
摘要翻译：本发明提供了制造具有前后处理能力的薄膜电子器件的方法。使用这些方法，可以在前方和背面处理期间进行高温处理步骤。该方法非常适用于制造背栅和双栅场效应晶体管，双面双极晶体管和3D集成电路。

3. 发明申请

US20120273913A1 FLEXIBLE LATERAL PIN DIODES AND THREE-DIMENSIONAL ARRAYS AND IMAGING DEVICES MADE THEREFROM 有权
标题翻译：灵活的侧面二极体和三维阵列和成像装置
公开(公告)号：US20120273913A1
公开(公告)日：2012-11-01
申请号：US13542886
申请日：2012-07-06
申请人： Zhenqiang Ma , Max G. Lagally , Hao-Chih Yuan
发明人： Zhenqiang Ma , Max G. Lagally , Hao-Chih Yuan
IPC分类号： H01L31/105
CPC分类号： H01L31/105 , G01J1/4228 , H01L27/14603 , H01L29/868 , H01L31/035281 , Y02E10/50
摘要： Flexible lateral p-i-n (“PIN”) diodes, arrays of flexible PIN diodes and imaging devices incorporating arrays of PIN diodes are provided. The flexible lateral PIN diodes are fabricated from thin, flexible layers of single-crystalline semiconductor. A plurality of the PIN diodes can be patterned into a single semiconductor layer to provide a flexible photodetector array that can be formed into a three-dimensional imaging device.
摘要翻译：提供了灵活的侧向p-i-n（PIN）二极管，灵活的PIN二极管阵列和结合PIN二极管阵列的成像装置。灵活的侧向PIN二极管由单晶半导体薄的柔性层制成。可以将多个PIN二极管图案化为单个半导体层，以提供可以形成为三维成像装置的柔性光电检测器阵列。

4. 发明授权

US07960218B2 Method for fabricating high-speed thin-film transistors 有权
标题翻译：制造高速薄膜晶体管的方法
公开(公告)号：US07960218B2
公开(公告)日：2011-06-14
申请号：US11517812
申请日：2006-09-08
申请人： Zhenqiang Ma , Hao-Chih Yuan , Guogong Wang
发明人： Zhenqiang Ma , Hao-Chih Yuan , Guogong Wang
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/4908 , H01L29/66606 , H01L29/66772 , H01L29/78603
摘要： This invention provides methods for fabricating high speed TFTs from silicon-on-insulator and bulk single crystal semiconductor substrates, such as Si(100) and Si(110) substrates. The TFTs may be designed to have a maximum frequency of oscillation of 3 GHz, or better.
摘要翻译：本发明提供了用于制造诸如Si（100）和Si（110）衬底的绝缘体上硅和体单晶半导体衬底的高速TFT的方法。 TFT可以被设计为具有3GHz的最大振荡频率或更好。

5. 发明申请

US20100308429A1 FLEXIBLE LATERAL PIN DIODES AND THREE-DIMENSIONAL ARRAYS AND IMAGING DEVICES MADE THEREFROM 有权
标题翻译：灵活的侧面二极体和三维阵列和成像装置
公开(公告)号：US20100308429A1
公开(公告)日：2010-12-09
申请号：US12478369
申请日：2009-06-04
申请人： Zhenqiang Ma , Max G. Lagally , Hao-Chih Yuan
发明人： Zhenqiang Ma , Max G. Lagally , Hao-Chih Yuan
IPC分类号： H01L31/105
CPC分类号： H01L31/105 , G01J1/4228 , H01L27/14603 , H01L29/868 , H01L31/035281 , Y02E10/50
摘要： Flexible lateral p-i-n (“PIN”) diodes, arrays of flexible PIN diodes and imaging devices incorporating arrays of PIN diodes are provided. The flexible lateral PIN diodes are fabricated from thin, flexible layers of single-crystalline semiconductor. A plurality of the PIN diodes can be patterned into a single semiconductor layer to provide a flexible photodetector array that can be formed into a three-dimensional imaging device.
摘要翻译：提供了灵活的侧向p-i-n（“PIN”）二极管，灵活的PIN二极管阵列和结合PIN二极管阵列的成像装置。灵活的侧向PIN二极管由单晶半导体薄的柔性层制成。可以将多个PIN二极管图案化为单个半导体层，以提供可以形成为三维成像装置的柔性光电检测器阵列。

6. 发明授权

US07777290B2 PIN diodes for photodetection and high-speed, high-resolution image sensing 有权
标题翻译： PIN二极管用于光电检测和高速，高分辨率图像感测
公开(公告)号：US07777290B2
公开(公告)日：2010-08-17
申请号：US11452135
申请日：2006-06-13
申请人： Max G. Lagally , Zhenqiang Ma
发明人： Max G. Lagally , Zhenqiang Ma
IPC分类号： H01L29/861
CPC分类号： H01L31/028 , H01L27/1446 , H01L27/14643 , H01L31/105 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention provides high-speed, high-efficiency PIN diodes for use in photodetector and CMOS imagers. The PIN diodes include a layer of intrinsic semiconducting material, such as intrinsic Ge or intrinsic GeSi, disposed between two tunneling barrier layers of silicon oxide. The two tunneling barrier layers are themselves disposed between a layer of n-type silicon and a layer of p-type silicon.
摘要翻译：本发明提供用于光电检测器和CMOS成像器的高速，高效PIN二极管。 PIN二极管包括设置在氧化硅的两个隧道势垒层之间的本征半导体材料层，例如本征Ge或本征GeSi。两个隧道势垒层本身设置在n型硅层和p型硅层之间。

7. 发明申请

US20070284688A1 Pin diodes for photodetection and high-speed, high-resolution image sensing 有权
标题翻译：针式二极管用于光电检测和高速，高分辨率图像感测
公开(公告)号：US20070284688A1
公开(公告)日：2007-12-13
申请号：US11452135
申请日：2006-06-13
申请人： Max G. Lagally , Zhenqiang Ma
发明人： Max G. Lagally , Zhenqiang Ma
IPC分类号： H01L31/00
CPC分类号： H01L31/028 , H01L27/1446 , H01L27/14643 , H01L31/105 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention provides high-speed, high-efficiency PIN diodes for use in photodetector and CMOS imagers. The PIN diodes include a layer of intrinsic semiconducting material, such as intrinsic Ge or intrinsic GeSi, disposed between two tunneling barrier layers of silicon oxide. The two tunneling barrier layers are themselves disposed between a layer of n-type silicon and a layer of p-type silicon.
摘要翻译：本发明提供用于光电检测器和CMOS成像器的高速，高效PIN二极管。 PIN二极管包括设置在氧化硅的两个隧道势垒层之间的本征半导体材料层，例如本征Ge或本征GeSi。两个隧道势垒层本身设置在n型硅层和p型硅层之间。

8. 发明授权

US08502218B2 Large-area, free-standing metal oxide films and transistors made therefrom 有权
标题翻译：大面积，独立的金属氧化物膜和由其制成的晶体管
公开(公告)号：US08502218B2
公开(公告)日：2013-08-06
申请号：US12723190
申请日：2010-03-12
申请人： Xudong Wang , Zhenqiang Ma , Fei Wang , Jung-Hun Seo
发明人： Xudong Wang , Zhenqiang Ma , Fei Wang , Jung-Hun Seo
IPC分类号： H01L29/12
CPC分类号： H01L21/02628 , C30B7/14 , C30B29/16 , H01L21/02554 , H01L21/0259 , H01L29/7869 , H01L33/28
摘要： The present invention provides continuous, free-standing metal oxide films and methods for making said films. The methods are able to produce large-area, flexible, thin films having one or more continuous, single-crystalline metal oxide domains. The methods include the steps of forming a surfactant monolayer at the surface of an aqueous solution, wherein the headgroups of the surfactant molecules provide a metal oxide film growth template. When metal ions in the aqueous solution are exposed to the metal oxide film growth template in the presence of hydroxide ions under suitable conditions, a continuous, free-standing metal oxide film can be grown from the film growth template downward into the aqueous solution.
摘要翻译：本发明提供连续的，独立的金属氧化物膜和制备所述膜的方法。该方法能够生产具有一个或多个连续的单晶金属氧化物畴的大面积，柔性的薄膜。所述方法包括在水溶液表面形成表面活性剂单层的步骤，其中表面活性剂分子的头基提供金属氧化物膜生长模板。当水溶液中的金属离子在合适的条件下在氢氧根离子存在下暴露于金属氧化物膜生长模板时，可以将连续的自立式金属氧化物膜从膜生长模板向下生长到水溶液中。

9. 发明授权

US08217410B2 Hybrid vertical cavity light emitting sources 有权
标题翻译：混合垂直腔发光源
公开(公告)号：US08217410B2
公开(公告)日：2012-07-10
申请号：US12412628
申请日：2009-03-27
申请人： Zhenqiang Ma , Weidong Zhou
发明人： Zhenqiang Ma , Weidong Zhou
IPC分类号： H01L29/66 , H01S5/00
CPC分类号： H01S5/18366 , B82Y10/00 , B82Y20/00 , H01S5/105 , H01S5/18319 , H01S5/18341 , H01S5/1838 , H01S5/34306
摘要： Vertical cavity light emitting sources that utilize patterned membranes as reflectors are provided. The vertical cavity light emitting sources have a stacked structure that includes an active region disposed between an upper reflector and a lower reflector. The active region, upper reflector and lower reflector can be fabricated from single or multi-layered thin films of solid states materials (“membranes”) that can be separately processed and then stacked to form a vertical cavity light emitting source.
摘要翻译：提供了利用图案化膜作为反射器的垂直腔发光源。垂直腔发光源具有包括设置在上反射器和下反射器之间的有源区的堆叠结构。有源区域，上部反射器和下部反射器可以由固态材料（“膜”）的单层或多层薄膜制成，其可被分开处理，然后堆叠形成垂直腔发光源。

10. 发明申请

US20100078722A1 Method for fabricating high-speed thin-film transistors 有权
标题翻译：制造高速薄膜晶体管的方法
公开(公告)号：US20100078722A1
公开(公告)日：2010-04-01
申请号：US11517812
申请日：2006-09-08
申请人： Zhenqiang Ma , Hao-Chih Yuan , Guogong Wang
发明人： Zhenqiang Ma , Hao-Chih Yuan , Guogong Wang
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/4908 , H01L29/66606 , H01L29/66772 , H01L29/78603
摘要： This invention provides methods for fabricating high speed TFTs from silicon-on-insulator and bulk single crystal semiconductor substrates, such as Si(100) and Si(110) substrates. The TFTs may be designed to have a maximum frequency of oscillation of 3 GHz, or better.
摘要翻译：本发明提供了用于制造诸如Si（100）和Si（110）衬底的绝缘体上硅和体单晶半导体衬底的高速TFT的方法。 TFT可以被设计为具有3GHz的最大振荡频率或更好。

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