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1. 发明申请

US20210050175A1 ELECTRON SOURCE AND ELECTRON GUN 有权
公开(公告)号：US20210050175A1
公开(公告)日：2021-02-18
申请号：US16966907
申请日：2018-12-26
申请人： 38th Research Institute, China Electronics Technology Group Corporation
发明人： Huarong LIU , Junting WANG , Xuehui WANG , Yuxuan QI , Xianbin HU , Xueming JIN , Zhao HUANG , Dizhi CHEN , Yijing LI , Youyin DENG
IPC分类号： H01J37/073 , H01J37/065 , H01J3/02 , H01J37/07
摘要： The present disclosure provides an electron source, including one or more tips, wherein at least one of the tips comprises one or more fixed emission sites, wherein at least one of the tips includes one or more fixed emission sites, wherein the emission sites includes a reaction product of metal atoms on a surface of the tip with gas molecules.

2. 发明申请

US20210050176A1 METHOD OF MANUFACTURING ELECTRON SOURCE 有权
公开(公告)号：US20210050176A1
公开(公告)日：2021-02-18
申请号：US16966908
申请日：2018-12-27
申请人： 38th Research Institute, China Electronics Technology Group Corporation
发明人： Xuehui WANG , Junting WANG , Xianbin HU , Dizhi CHEN , Guang TANG , Huarong LIU , Lei ZHENG , Qing QIAN , Chunning ZHENG , Guochao WANG
IPC分类号： H01J37/073 , H01J37/065 , H01J3/02
摘要： The present disclosure provides a method of manufacturing an electron source. The method includes forming one or more fixed emission sites on at least one needle tip, the fixed emission sites including a reaction product formed by metal atoms on a surface of the needle tip and gas molecules.

3. 发明申请

US20210050173A1 ELECTRON SOURCE REGENERATION METHOD 有权
公开(公告)号：US20210050173A1
公开(公告)日：2021-02-18
申请号：US16966911
申请日：2018-12-27
申请人： 38th Research Institute, China Electronics Technology Group Corporation
发明人： Xuehui WANG , Zhao HUANG , Junting WANG , Tingting LUO , Huarong LIU , Xingjia YAO , Yijing LI , Lei ZHENG , Chunning ZHENG
IPC分类号： H01J9/50
摘要： The present disclosure provides a method of regenerating an electron source, the electron source including at least one emission site fixed on a needle tip, and the emission site including a reaction product formed by metal atoms and gas molecules. The method includes regenerating the electron source in situ if an emission capability of the electron source satisfies a regeneration condition.

4. 发明申请

US20130112138A1 PARTICLE SOURCES AND METHODS FOR MANUFACTURING THE SAME 有权
标题翻译：颗粒源及其制造方法
公开(公告)号：US20130112138A1
公开(公告)日：2013-05-09
申请号：US13726971
申请日：2012-12-26
申请人： 38th Research Institute, China Electronics Technology Group Corporation
发明人： Huarong LIU
IPC分类号： C23F4/02 , H01J1/00
CPC分类号： C23F4/02 , B82Y99/00 , H01J1/00 , H01J1/3044 , H01J9/025 , H01J27/26 , H01J37/04 , H01J37/06 , H01J37/073 , H01J37/08 , H01J2201/30415 , H01J2237/0807
摘要： The present disclosure provides a method for manufacturing a particle source, comprising: placing a metal wire in vacuum, introducing active gas and catalyst gas, adjusting a temperature of the metal wire, and applying a positive high voltage V to the metal wire to dissociate the active gas at the surface of the metal wire, in order to generate at a peripheral surface of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than the to evaporation field of the material for the metal wire, so that metal atoms at the wire apex are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.
摘要翻译：本公开提供了一种制造颗粒源的方法，包括：将金属丝放置在真空中，引入活性气体和催化剂气体，调节金属丝的温度，以及向金属丝施加正高电压V以使在金属线的表面处的活性气体，以在金属线的头部的外周表面上产生进行场诱导化学蚀刻（FICE）的蚀刻区域; 通过FICE增加金属丝头顶部的表面电场大于金属线材料的蒸发场，使金属丝顶端的金属原子蒸发掉; 在通过FICE激活场蒸发之后，引起FICE和场蒸发之间的相互调节，直到金属丝的头部具有基部和底部的尖端的组合的形状; 并且当金属丝的头部具有预定形状时，停止FICE和场蒸发。

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