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1. 发明授权

US10170297B2 Compositions and methods using same for flowable oxide deposition 有权
公开(公告)号：US10170297B2
公开(公告)日：2019-01-01
申请号：US14457397
申请日：2014-08-12
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Ronald Martin Pearlstein , Daniel P. Spence
IPC分类号： C09D5/00 , H01L21/02 , C23C16/40 , C23C16/452
摘要： Described herein are compositions or formulations for forming a film in a semiconductor deposition process, such as without limitation, a flowable chemical vapor deposition of silicon oxide. Also described herein is a method to improve the surface wetting by incorporating an acetylenic alcohol or diol surfactant such as without limitation 3,5-dimethyl-1-hexyn-3-ol, 2,4,7,9-tetramethyl-5-decyn-4,7-diol, 4-ethyl-1-octyn-3-ol, and 2,5-dimethylhexan-2,5-diol, and other related compounds.

2. 发明授权

US09677178B2 Alkoxyaminosilane compounds and applications thereof 有权
公开(公告)号：US09677178B2
公开(公告)日：2017-06-13
申请号：US14940249
申请日：2015-11-13
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Daniel P. Spence , Xinjian Lei , Ronald Martin Pearlstein , Manchao Xiao , Richard Ho
IPC分类号： C07F7/10 , C07F7/18 , C23C16/50 , C23C16/455 , C09D7/12
CPC分类号： C23C16/50 , C07F7/10 , C07F7/1804 , C07F7/188 , C07F7/1888 , C23C16/45525
摘要： Alkoxyaminosilane compound having formula I, and processes and compositions for depositing a silicon-containing film, are described herein: (R1R2)NSiR3OR4OR5 Formula (I) wherein R1 is independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group; R2 and R3 are each independently selected from hydrogen; a linear or branched C1 to C10 alkyl group; a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group; and R4 and R5 are each independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group.

3. 发明申请

US20150056822A1 COMPOSITIONS AND METHODS USING SAME FOR FLOWABLE OXIDE DEPOSITION 审中-公开
标题翻译：使用相同的可氧化氧化物沉积的组合物和方法
公开(公告)号：US20150056822A1
公开(公告)日：2015-02-26
申请号：US14457397
申请日：2014-08-12
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Ronald Martin Pearlstein , Daniel P. Spence
IPC分类号： H01L21/02
CPC分类号： H01L21/02164 , C09D5/00 , C23C16/401 , C23C16/402 , C23C16/452 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02282
摘要： Described herein are compositions or formulations for forming a film in a semiconductor deposition process, such as without limitation, a flowable chemical vapor deposition of silicon oxide. Also described herein is a method to improve the surface wetting by incorporating an acetylenic alcohol or diol surfactant such as without limitation 3,5-dimethyl-1-hexyn-3-ol, 2,4,7,9-tetramethyl-5-decyn-4,7-diol, 4-ethyl-1-octyn-3-ol, and 2,5-dimethylhexan-2,5-diol, and other related compounds.
摘要翻译：本文描述的是用于在半导体沉积工艺中形成膜的组合物或制剂，例如但不限于氧化硅的可流动化学气相沉积。本文还描述了通过引入炔醇或二醇表面活性剂来改善表面润湿性的方法，例如但不限于3,5-二甲基-1-己炔-3-醇，2,4,7,9-四甲基-5-癸炔 -4,7-二醇，4-乙基-1-辛炔-3-醇和2,5-二甲基己烷-2,5-二醇等相关化合物。

4. 发明申请

US20130196082A1 ALKOXYAMINOSILANE COMPOUNDS AND APPLICATIONS THEREOF 有权
标题翻译：烷氧基硅烷化合物及其应用
公开(公告)号：US20130196082A1
公开(公告)日：2013-08-01
申请号：US13745102
申请日：2013-01-18
申请人： Air Products and Chemicals, Inc.
发明人： Daniel P. Spence , Ronald Martin Pearlstein , Xinjian Lei , Manchao Xiao , Richard Ho , Mark Leonard O'Neill , Haripin Chandra
IPC分类号： C09D7/12
CPC分类号： C09D7/1233 , C07F7/10 , C07F7/188 , C09D7/63
摘要： Alkoxyaminosilane compounds having formula I, and processes and compositions for depositing a silicon-containing film, are described herein: (R1R2)NSiR3OR4OR5 Formula (I) wherein R1 is independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group; R2 and R3 are each independently selected from hydrogen; a linear or branched C1 to C10 alkyl group; a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group; and R4 and R5 are each independently selected from a linear or branched C1 to C10 alkyl group; a C2 to C12 alkenyl group; a C2 to C12 alkynyl group; a C4 to C10 cyclic alkyl group; and a C6 to C10 aryl group.
摘要翻译：（R1R2）NSiR3OR4OR5（I）其中R1独立地选自直链或支链C1至C10烷基;（R1R2） C2〜C12烯基; C2〜C12炔基; C4至C10环烷基; 和C 6至C 10芳基; R2和R3各自独立地选自氢; 直链或支链C1至C10烷基; C3至C12烯基，C3至C12炔基，C4至C10环烷基和C6至C10芳基; 并且R 4和R 5各自独立地选自直链或支链C 1至C 10烷基; C2〜C12烯基; C2〜C12炔基; C4至C10环烷基; 和C 6至C 10芳基。

5. 发明授权

US10279959B2 Alkoxysilylamine compounds and applications thereof 有权
公开(公告)号：US10279959B2
公开(公告)日：2019-05-07
申请号：US14096388
申请日：2013-12-04
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Manchao Xiao , Ronald Martin Pearlstein , Richard Ho , Daniel P. Spence , Xinjian Lei
IPC分类号： C07F7/10 , B65D25/14 , C23C16/00 , C07F7/18
摘要： Described herein are alkoxysilylamine precursors having the following Formulae A and B: wherein R1 and R4 are independently selected from a linear or branched C1 to C10 alkyl group, a C3 to C12 alkenyl group, a C3 to C12 alkynyl group, a C4 to C10 cyclic alkyl group, and a C6 to C10 aryl group and wherein R2, R3, R4, R5, and R6 are independently selected from the group consisting of hydrogen, a linear or branched C1 to C10 alkyl group, a C2 to C12 alkenyl group, a C2 to C12 alkynyl group, a C4 to C10 cyclic alkyl, a C6 to C10 aryl group, and a linear or branched C1 to C10 alkoxy group. Also described herein are deposition processes using at least one precursor have Formulae A and/or B described herein.

6. 发明授权

US09809711B2 Catalyst and formulations comprising same for alkoxysilanes hydrolysis reaction in semiconductor process 有权
公开(公告)号：US09809711B2
公开(公告)日：2017-11-07
申请号：US13738482
申请日：2013-01-10
申请人： Air Products and Chemicals, Inc.
发明人： Manchao Xiao , Ronald Martin Pearlstein , Richard Ho , Xinjian Lei , Steven Gerard Mayorga , Daniel P. Spence
IPC分类号： C09D1/00 , H01L21/02 , B65B1/04 , C08G77/04
CPC分类号： C09D1/00 , B65B1/04 , C08G77/04 , H01L21/02126 , H01L21/02216 , H01L21/02282
摘要： A stable formulation comprising a silicon containing precursor selected from an alkoxysilane, aryloxysilane, or alkylalkoxysilane and a catalyst compound comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane wherein the substitutents within the silicon-containing precursor and catalyst compound are the same are described herein. More specifically, the formulation comprises a silicon-containing precursor comprising an alkoxyalkylsilane or aryloxysilane having a formula of Si(OR1)nR24-n and a catalyst comprising haloalkoxyalkylsilane having a formula of XSi(OR1)nR23-n; or a silicon-containing precursor comprising an alkoxysilane or aryloxysilane having a formula of R23-p(R1O)pSi—R3—Si(OR1)pR23-p and a catalyst comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane having a formula of (R1O)mR22-m(X)Si—R3—Si(OR4)2R5 wherein at least one or all of the R1 and R2 substituents are the same in both the silicon-containing precursor and catalyst compound are described herein. The formulations can be used in semiconductor deposition process, such as for example, a flowable silicon oxide process.

7. 发明授权

US09796739B2 AZA-polysilane precursors and methods for depositing films comprising same 有权
公开(公告)号：US09796739B2
公开(公告)日：2017-10-24
申请号：US14293554
申请日：2014-06-02
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Manchao Xiao , Xinjian Lei , Daniel P. Spence
IPC分类号： C23C16/34 , C07F7/21 , C07F7/10 , C23C16/24 , C23C16/40 , C23C16/455 , C07F7/02 , H01L21/02
CPC分类号： C07F7/21 , C07F7/025 , C07F7/10 , C23C16/24 , C23C16/345 , C23C16/401 , C23C16/45544 , C23C16/45553 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/02532 , H01L21/02592 , H01L21/0262
摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided an aza-polysilane precursor comprising at least two Si—N bonds, at least one Si—Si bond, and at least two SiH2 groups represented by the following Formula IA, IB and IC: wherein R1 and R2 are independently selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, C3 to C10 cyclic alkyl group, C3 to C10 hetero-cyclic alkyl group, a C5 to C10 aryl group, and a C3 to C10 hetero-aryl group, a C2 to C10 dialkylamino group, a C3 to C10 cyclic alkylamino group; R3 and R4 are independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C2 to C10 alkenyl group, a linear or branched C2 to C10 alkynyl group, C3 to C10 cyclic alkyl group, C3 to C10 hetero-cyclic alkyl group, a C5 to C10 aryl group, and a C3 to C10 hetero-aryl group, a C2 to C10 dialkylamino group, a C3 to C10 cyclic alkylamino group; wherein R1 in Formula IA cannot both be methyl, R1 and R2 in Formula IB cannot both be iso-propyl, tert-butyl, and bezenyl and R3 and R4 cannot both be methyl and phenyl.

8. 发明申请

US20150147871A1 AZA-POLYSILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME 有权
标题翻译： AZA-POLYSILANE前体和沉积包含其的膜的方法
公开(公告)号：US20150147871A1
公开(公告)日：2015-05-28
申请号：US14293554
申请日：2014-06-02
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Manchao Xiao , Xinjian Lei , Daniel P. Spence
IPC分类号： C07F7/21 , H01L21/02 , C23C16/455 , C07F7/02 , C23C16/34
CPC分类号： C07F7/21 , C07F7/025 , C07F7/10 , C23C16/24 , C23C16/345 , C23C16/401 , C23C16/45544 , C23C16/45553 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/02532 , H01L21/02592 , H01L21/0262
摘要： Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided an aza-polysilane precursor comprising at least two Si—N bonds, at least one Si—Si bond, and at least two SiH2 groups represented by the following Formula IA, IB and IC: wherein R1 and R2 are independently selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, C3 to C10 cyclic alkyl group, C3 to C10 hetero-cyclic alkyl group, a C5 to C10 aryl group, and a C3 to C10 hetero-aryl group, a C2 to C10 dialkylamino group, a C3 to C10 cyclic alkylamino group; R3 and R4 are independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C2 to C10 alkenyl group, a linear or branched C2 to C10 alkynyl group, C3 to C10 cyclic alkyl group, C3 to C10 hetero-cyclic alkyl group, a C5 to C10 aryl group, and a C3 to C10 hetero-aryl group, a C2 to C10 dialkylamino group, a C3 to C10 cyclic alkylamino group; wherein R1 in Formula IA cannot both be methyl, R1 and R2 in Formula IB cannot both be iso-propyl, tert-butyl, and bezenyl and R3 and R4 cannot both be methyl and phenyl.
摘要翻译：这里描述的是用于形成含硅膜的前体和方法。一方面，提供了包含至少两个Si-N键，至少一个Si-Si键和由下式IA，IB和IC表示的至少两个SiH 2基团的氮杂聚硅烷前体：其中R1和R2 直链或支链C 3至C 10烯基，直链或支链C 3至C 10炔基，C 3至C 10环烷基，C 3至C 10杂环烷基， C5至C10芳基和C3至C10杂芳基，C2至C10二烷基氨基，C3至C10环烷基氨基; R3和R4独立地选自氢，直链或支链C1至C10烷基，直链或支链C2至C10链烯基，直链或支链C2至C10炔基，C3至C10环烷基，C3至C10杂环烷基，C 5〜C 10芳基，C 3〜C 10杂芳基，C 2〜C 10二烷基氨基，C 3〜C 10环烷基氨基，其中式IA中的R1不能同时为甲基，式IB中的R 1和R 2不能同时为异丙基，叔丁基和苯乙烯基，且R 3和R 4不能同时为甲基和苯基。

9. 发明申请

US20160237100A1 BISAMINOALKOXYSILANE COMPOUNDS AND METHODS FOR USING SAME TO DEPOSIT SILICON-CONTAINING FILMS 有权
标题翻译：二甲氧基甲硅烷氧基化合物和使用同一种方法沉积含硅膜
公开(公告)号：US20160237100A1
公开(公告)日：2016-08-18
申请号：US15017913
申请日：2016-02-08
申请人： Air Products and Chemicals, Inc.
发明人： Daniel P. Spence , Xinjian Lei , Ronald Martin Pearlstein , Manchao Xiao , Jianheng Li
IPC分类号： C07F7/10 , C01B21/082 , C23C16/56 , C23C16/48 , C23C16/50 , C01B33/18 , C01B31/30
摘要： Bisaminoalkoxysilanes of Formula I, and methods using same, are described herein: R1Si(NR2R3)(NR4R5)OR6 I where R1 is selected from hydrogen, a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, a C4 to C10 aromatic hydrocarbon group; R2, R3, R4, and R5 are each independently selected from hydrogen, a C4 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C3 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group; R6 is selected from a C1 to C10 linear alkyl group, a C3 to C10 branched alkyl group, a C3 to C10 cyclic alkyl group, a C3 to C10 alkenyl group, a C2 to C10 alkynyl group, and a C4 to C10 aromatic hydrocarbon group.
摘要翻译：式I的二氨基烷氧基硅烷及其使用方法如下所述：R1Si（NR2R3）（NR4R5）OR6I其中R1选自氢，C1至C10直链烷基，C3至C10支链烷基，C3至C10 环烷基，C3〜C10烯基，C3〜C10炔基，C4〜C10芳香族烃基; R2，R3，R4和R5各自独立地选自氢，C4至C10支链烷基，C3至C10环烷基，C3至C10烯基，C3至C10炔基和C4至C10 芳烃基团; R6选自C1至C10直链烷基，C3至C10支链烷基，C3至C10环烷基，C3至C10烯基，C2至C10炔基和C4至C10芳族烃基。

10. 发明授权

US09337018B2 Methods for depositing films with organoaminodisilane precursors 有权
标题翻译：用有机氨基二硅烷前体沉积薄膜的方法
公开(公告)号：US09337018B2
公开(公告)日：2016-05-10
申请号：US13902300
申请日：2013-05-24
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Manchao Xiao , Xinjian Lei , Daniel P. Spence , Haripin Chandra , Bing Han , Mark Leonard O'Neill , Steven Gerard Mayorga , Anupama Mallikarjunan
IPC分类号： C23C16/40 , H01L21/02 , C09D1/00 , C07F7/10 , C23C16/18 , C23C16/455 , C23C16/46
CPC分类号： H01L21/02211 , C01B21/0682 , C01B21/0828 , C01B33/021 , C01B33/126 , C01P2002/02 , C07F7/025 , C07F7/10 , C09D1/00 , C09D7/20 , C23C16/18 , C23C16/345 , C23C16/401 , C23C16/45525 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/46 , H01L21/02126 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02219 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02532 , H01L21/0262 , Y10T428/13
摘要： A method for forming a silicon-containing film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the method comprising: providing the at least one surface of the substrate in a reaction chamber; introducing at least one organoaminodisilane precursor comprising a Si—N bond, a Si—Si bond, and a Si—H3 group represented by the following Formula I below: wherein R1 and R2 are defined herein; and introducing a nitrogen-containing source into the reactor wherein the at least one organoaminodisilane precursor and the nitrogen-containing source react to form the film on the at least one surface.
摘要翻译：一种通过选自化学气相沉积工艺和原子层沉积工艺的沉积工艺在衬底的至少一个表面上形成含硅膜的方法，该方法包括：将衬底的至少一个表面设置在反应室; 引入至少一种包含由下式I表示的Si-N键，Si-Si键和Si-H3族的有机基二硅烷前体：其中R1和R2如本文所定义; 并将含氮源引入所述反应器中，其中所述至少一种有机氨基二硅烷前体和所述含氮源在所述至少一个表面上反应形成所述膜。

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