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1. 发明授权

US10930531B2 Adaptive control of wafer-to-wafer variability in device performance in advanced semiconductor processes 有权
公开(公告)号：US10930531B2
公开(公告)日：2021-02-23
申请号：US16155779
申请日：2018-10-09
申请人： Applied Materials, Inc.
发明人： Samer Banna , Lior Engel , Dermot Cantwell
IPC分类号： H01L21/67 , H01J37/32 , H01L21/66 , G05B13/02 , G05B13/04
摘要： Systems and methods for controlling device performance variability during manufacturing of a device on wafers are disclosed. The system includes a process platform, on-board metrology (OBM) tools, and a first server that stores a machine-learning based process control model. The first server combines virtual metrology (VM) data and OBM data to predict a spatial distribution of one or more dimensions of interest on a wafer. The system further comprises an in-line metrology tool, such as SEM, to measure the one or more dimensions of interest on a subset of wafers sampled from each lot. A second server having a machine-learning engine receives from the first server the predicted spatial distribution of the one or more dimensions of interest based on VM and OBM, and also receives SEM metrology data, and updates the process control model periodically (e.g., wafer-to-wafer, lot-to-lot, chamber-to-chamber etc.) using machine learning techniques.

2. 发明授权

US10510624B2 Metrology systems with multiple derivative modules for substrate stress and deformation measurement 有权
公开(公告)号：US10510624B2
公开(公告)日：2019-12-17
申请号：US16080102
申请日：2017-03-09
申请人： Applied Materials, Inc.
发明人： Mehdi Vaez-Iravani , Todd Egan , Samer Banna , Kyle Tantiwong
IPC分类号： G01B11/24 , H01L21/66 , G02B27/12
摘要： Embodiments of the disclosure provide a metrology system. In one example, a metrology system includes a laser source adapted to transmit a light beam, a lens adapted to receive at least a portion of the light beam from the laser source, a first beam splitter positioned to receive at least the portion of the light beam passing through the lens, a first beam displacing device adapted to cause a portion of the light beam received from the beam splitter to be split into two or more sub-light beams a first recording device having a detection surface, and a first polarizer that is positioned between the first displacing device and the first recording device, wherein the first polarizer is configured to cause the two or more sub-light beams provided from the first displacing device to form an interference pattern on the detection surface of the first recording device.

3. 发明授权

US08956886B2 Embedded test structure for trimming process control 有权
标题翻译：用于修整过程控制的嵌入式测试结构
公开(公告)号：US08956886B2
公开(公告)日：2015-02-17
申请号：US14204668
申请日：2014-03-11
申请人： Applied Materials, Inc.
发明人： Samer Banna , Olivier Joubert , Lei Lian , Maxime Darnon , Nicolas Posseme , Laurent Vallier
IPC分类号： H01L21/00 , H01L21/66 , H01L21/311 , H01L21/027 , H01L21/67 , H01L21/308 , H01L21/3213 , G03F7/20
CPC分类号： H01L22/26 , G03F7/70625 , H01L21/0273 , H01L21/3086 , H01L21/31138 , H01L21/31144 , H01L21/32139 , H01L21/67253 , H01L22/12 , H01L22/20
摘要： In some embodiments, a method of controlling a photoresist trimming process in a semiconductor manufacturing process may include forming a photoresist layer atop a first surface of a substrate, wherein the photoresist layer comprises a lower layer having a first pattern to be etched into the first surface of the substrate, and an upper layer having a second pattern that is not etched into the first surface of the substrate; trimming the photoresist layer in a direction parallel to the first surface of the substrate; measuring a trim rate of the second pattern using an optical measuring tool during the trimming process; and correlating the trim rate of the second pattern to a trim rate of the first pattern to control the trim rate of the first pattern during the trimming process.
摘要翻译：在一些实施例中，在半导体制造工艺中控制光致抗蚀剂修剪工艺的方法可以包括在衬底的第一表面之上形成光致抗蚀剂层，其中光致抗蚀剂层包括具有要蚀刻到第一表面中的第一图案的下层以及具有未蚀刻到所述基板的第一表面中的第二图案的上层; 在平行于基板的第一表面的方向上修整光致抗蚀剂层; 在修整过程中使用光学测量工具测量第二图案的修剪率; 以及将所述第二图案的修整率与所述第一图案的修剪率相关联，以在所述修整处理期间控制所述第一图案的修整率。

4. 发明授权

US10163606B2 Plasma reactor with highly symmetrical four-fold gas injection 有权
公开(公告)号：US10163606B2
公开(公告)日：2018-12-25
申请号：US14762224
申请日：2014-02-03
申请人： APPLIED MATERIALS, INC.
发明人： Yan Rozenzon , Kyle Tantiwong , Imad Yousif , Vladimir Knyazik , Bojenna Keating , Samer Banna
IPC分类号： H01J37/32 , C23C16/455
摘要： An annular lid plate of a plasma reactor has upper and lower layers of gas distribution channels distributing gas along equal length paths from gas supply lines to respective gas distribution passages of a ceiling gas nozzle.

5. 发明授权

US09978620B2 Method and apparatus for reducing radiation induced change in semiconductor structures 有权
公开(公告)号：US09978620B2
公开(公告)日：2018-05-22
申请号：US15584767
申请日：2017-05-02
申请人： Applied Materials, Inc.
发明人： Gary E. Dickerson , Seng (victor) Keong Lim , Samer Banna , Gregory Kirk , Mehdi Vaez-Iravani
IPC分类号： H01L21/67 , H01L21/324 , H01L21/683 , H01L21/66 , H01L21/027
CPC分类号： H01L21/67248 , H01L21/0273 , H01L21/324 , H01L21/67103 , H01L21/67115 , H01L21/67253 , H01L21/6831 , H01L22/12
摘要： Embodiments of the present disclosure relate to an apparatus and a method for reducing the adverse effects of exposing portions of an integrated circuit (IC) device to various forms of radiation during one or more operations found within the IC formation processing sequence by controlling the environment surrounding and temperature of an IC device during one or more parts of the IC formation processing sequence. The provided energy may include the delivery of radiation to a surface of a formed or a partially formed IC device during a deposition, etching, inspection or post-processing process operation. In some embodiments of the disclosure, the temperature of the substrate on which the IC device is formed is controlled to a temperature that is below room temperature (e.g.,

6. 发明授权

US09779953B2 Electromagnetic dipole for plasma density tuning in a substrate processing chamber 有权
公开(公告)号：US09779953B2
公开(公告)日：2017-10-03
申请号：US14491729
申请日：2014-09-19
申请人： APPLIED MATERIALS, INC.
发明人： Joseph F. Aubuchon , Tza-Jing Gung , Samer Banna
IPC分类号： H01L21/306 , H01L21/3065 , H01J37/32
CPC分类号： H01L21/3065 , H01J37/3211 , H01J37/32669
摘要： Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, an apparatus for processing a substrate includes: a process chamber having an internal processing volume disposed beneath a dielectric lid of the process chamber; a substrate support disposed in the process chamber; two or more concentric inductive coils disposed above the dielectric lid to inductively couple RF energy into the processing volume above the substrate support; and an electromagnetic dipole disposed proximate a top surface of the dielectric lid between two adjacent concentric inductive coils of the two or more concentric inductive coils.

7. 发明授权

US09257265B2 Methods for reducing etch nonuniformity in the presence of a weak magnetic field in an inductively coupled plasma reactor 有权
标题翻译：在电感耦合等离子体反应器中存在弱磁场的情况下减少蚀刻不均匀的方法
公开(公告)号：US09257265B2
公开(公告)日：2016-02-09
申请号：US14206723
申请日：2014-03-12
申请人： APPLIED MATERIALS, INC.
发明人： Alvaro Garcia De Gorordo , Waheb Bishara , Samer Banna
IPC分类号： H01L21/66 , H01J37/32
CPC分类号： H01J37/3266 , H01J37/321 , H01L2924/0002 , H01L2924/00
摘要： Methods and apparatus for plasma-enhanced substrate processing are provided herein. In some embodiments, a method is provided for processing a substrate in a process chamber having a plurality of electromagnets disposed about the process chamber to form a magnetic field within the process chamber at least at a substrate level. In some embodiments, the method includes determining a first direction of an external magnetic field present within the process chamber while providing no current to the plurality of electromagnets; providing a range of currents to the plurality of electromagnets to create a magnetic field within the process chamber having a second direction opposing the first direction; determining a desired magnitude in the second direction of the magnetic field over the range of currents; and processing a substrate in the process chamber using a plasma while statically providing the magnetic field at the desired magnitude.
摘要翻译：本文提供了等离子体增强基板处理的方法和装置。在一些实施例中，提供了一种用于处理处理室中的基板的方法，该处理室具有设置在处理室周围的多个电磁体，以至少在基板层处在处理室内形成磁场。在一些实施例中，该方法包括确定处理室内存在的外部磁场的第一方向，同时不向多个电磁体提供电流; 向所述多个电磁体提供一定范围的电流以在所述处理室内产生具有与所述第一方向相反的第二方向的磁场; 在电流范围内确定磁场的第二方向上的期望幅度; 以及使用等离子体处理处理室中的衬底，同时静态地将所述磁场提供到期望的大小。

8. 发明申请

US20150371831A1 MULTI-ZONE GAS INJECTION ASSEMBLY WITH AZIMUTHAL AND RADIAL DISTRIBUTION CONTROL 有权
标题翻译：多区域气体注入装置与三角形和径向分布控制
公开(公告)号：US20150371831A1
公开(公告)日：2015-12-24
申请号：US14762219
申请日：2014-02-03
申请人： APPLIED MATERIALS, INC.
发明人： Yan Rozenzon , Kyle Tantiwong , Imad Yousif , Vladimir Knyazik , Bojenna Keating , Samer Banna
IPC分类号： H01J37/32
CPC分类号： H01J37/32449 , C23C16/45561 , C23C16/45563 , C23C16/45578 , H01J37/3244
摘要： A gas injection system includes (a) a side gas plenum, (b) a plurality of N gas inlets coupled to said side gas plenum, (c) plural side gas outlets extending radially inwardly from said plenum, (d) an N-way gas flow ratio controller having N outputs coupled to said N gas inlets respectively, and (e) an M-way gas flow ratio controller having M outputs, respective ones of said M outputs coupled to said tunable gas nozzle and a gas input of said N-way gas flow ratio controller.
摘要翻译：气体注入系统包括（a）侧气室，（b）多个与所述侧气室连通的N个气体入口，（c）从所述气室径向向内延伸的多个侧气体出口，（d）N路具有分别与所述N个气体入口相连的N个输出的气体流量比控制器，以及（e）具有M个输出的M路气体流量比控制器，耦合到所述可调气体喷嘴的所述M个输出中的相应的M个输出端和所述N个气体入口 - 天然气流量比控制器。

9. 发明申请

US20150097479A1 MULTIPLE ZONE COIL ANTENNA WITH PLURAL RADIAL LOBES 有权
标题翻译：多个区域线圈天线与多个径向离子
公开(公告)号：US20150097479A1
公开(公告)日：2015-04-09
申请号：US14107184
申请日：2013-12-16
申请人： APPLIED MATERIALS, INC.
发明人： Vladimir Knyazik , Samer Banna , Kyle R. Tantiwong
IPC分类号： H01J37/32
CPC分类号： H01J37/3211
摘要： A low inductance coil antenna for a plasma reactor has multiple radial zones of plural conductor lobes extending radially from respective RF supply and ground rings.
摘要翻译：用于等离子体反应器的低电感线圈天线具有从相应的RF电源和接地环径向延伸的多个导体突起的多个径向区域。

10. 发明授权

US11244811B2 Plasma reactor with highly symmetrical four-fold gas injection 有权
公开(公告)号：US11244811B2
公开(公告)日：2022-02-08
申请号：US16226536
申请日：2018-12-19
申请人： Applied Materials, Inc.
发明人： Yan Rozenzon , Kyle Tantiwong , Imad Yousif , Vladimir Knyazik , Bojenna Keating , Samer Banna
IPC分类号： H01J37/32 , C23C16/455
摘要： An annular lid plate of a plasma reactor has upper and lower layers of gas distribution channels distributing gas along equal length paths from gas supply lines to respective gas distribution passages of a ceiling gas nozzle.

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