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1. 发明申请

US20200243368A1 SUBSTRATE SUPPORT ASSEMBLY WITH DEPOSITED SURFACE FEATURES 审中-公开
公开(公告)号：US20200243368A1
公开(公告)日：2020-07-30
申请号：US16847954
申请日：2020-04-14
申请人： Applied Materials, Inc.
发明人： Wendell Glenn Boyd, JR. , Vijay D. Parkhe , Teng-Fang Kuo , Zhenwen Ding
IPC分类号： H01L21/683 , C03C17/00 , H01L21/687 , G03F7/20 , H02N13/00
摘要： An electrostatic chuck comprises a ceramic body comprising an embedded electrode and a first ceramic coating on a surface of the ceramic body, wherein the first ceramic coating fills pores in the ceramic body. The electrostatic chuck further comprises a second ceramic coating on the first ceramic coating and a plurality of elliptical mesas on the second ceramic coating, the plurality of elliptical mesas having rounded edges.

2. 发明申请

US20220254672A1 CHAMBER COMPONENT WITH PROTECTIVE CERAMIC COATING CONTAINING YTTRIUM, ALUMINUM AND OXYGEN 有权
公开(公告)号：US20220254672A1
公开(公告)日：2022-08-11
申请号：US17728820
申请日：2022-04-25
申请人： Applied Materials, Inc.
发明人： Wendell Glenn Boyd, Jr. , Vijay D. Parkhe , Teng-Fang Kuo , Zhenwen Ding
IPC分类号： H01L21/683 , H01L21/687 , C03C17/00
摘要： A coated chamber component comprises a body and a protective ceramic coating deposited over a surface of the body, the protective ceramic coating being amorphous and comprising about 8-20% by weight yttrium, about 20-32% by weight aluminum, and about 60-70% by weight oxygen.

3. 发明申请

US20180301364A1 SUBSTRATE SUPPORT ASSEMBLY WITH DEPOSITED SURFACE FEATURES 审中-公开
公开(公告)号：US20180301364A1
公开(公告)日：2018-10-18
申请号：US16007977
申请日：2018-06-13
申请人： Applied Materials, Inc.
发明人： Wendell Glenn Boyd, JR. , Vijay D. Parkhe , Teng-Fang Kuo , Zhenwen Ding
IPC分类号： H01L21/683 , C03C17/00 , H01L21/687
摘要： An electrostatic chuck comprises a ceramic body comprising an embedded electrode and a first ceramic coating on a surface of the ceramic body, wherein the first ceramic coating fills pores in the ceramic body. The electrostatic chuck further comprises a second ceramic coating on the first ceramic coating and a plurality of elliptical mesas on the second ceramic coating, the plurality of elliptical mesas having rounded edges.

4. 发明授权

US10020218B2 Substrate support assembly with deposited surface features 有权
公开(公告)号：US10020218B2
公开(公告)日：2018-07-10
申请号：US14944018
申请日：2015-11-17
申请人： Applied Materials, Inc.
发明人： Wendell Glenn Boyd, Jr. , Vijay D. Parkhe , Teng-Fang Kuo , Zhenwen Ding
IPC分类号： H01T23/00 , H01L21/683 , C03C17/00 , H01L21/687
CPC分类号： H01L21/6833 , C03C17/00 , H01L21/6875 , H01L21/68757
摘要： A method of manufacturing an electrostatic chuck includes polishing a surface of a ceramic body of the electrostatic chuck to produce a polished surface and depositing a ceramic coating onto the polished surface of the ceramic body to produce a coated ceramic body. The method further includes disposing a mask over the coated ceramic coating, the mask comprising a plurality of elliptical holes and depositing a ceramic material through the plurality of elliptical holes of the mask to form a plurality of elliptical mesas on the coated ceramic body, wherein the plurality of elliptical mesas have rounded edges. The mask is then removed from the coated ceramic body and the plurality of elliptical mesas are polished.

5. 发明授权

US09805914B2 Methods for removing contamination from surfaces in substrate processing systems 有权
公开(公告)号：US09805914B2
公开(公告)日：2017-10-31
申请号：US14698556
申请日：2015-04-28
申请人： APPLIED MATERIALS, INC.
发明人： Chun Yan , Jim Zhongyi He , Xinyu Bao , Teng-Fang Kuo , Zhenwen Ding , Adam Lane
IPC分类号： B08B6/00 , C25F1/00 , H01J37/32 , H01L21/02
CPC分类号： H01J37/32082 , H01J37/32862 , H01L21/02057 , H01L21/02068 , H01L21/02538 , H01L21/02661
摘要： Methods for removing contamination from a surface disposed in a substrate processing system are provided herein. In some embodiments, a method for removing contaminants from a surface includes: providing a first process gas comprising a chlorine containing gas, a hydrogen containing gas, and an inert gas to a process chamber having the surface disposed within the process chamber; igniting the first process gas to form a plasma from the first process gas; and exposing the surface to the plasma to remove contaminants from the surface. In some embodiments, the surface is an exposed surface of a process chamber component. In some embodiments, the surface is a surface of a first layer disposed atop a substrate, such as a semiconductor wafer.

6. 发明授权

US11476146B2 Substrate support assembly with deposited surface features 有权
公开(公告)号：US11476146B2
公开(公告)日：2022-10-18
申请号：US16847954
申请日：2020-04-14
申请人： Applied Materials, Inc.
发明人： Wendell Glenn Boyd, Jr. , Vijay D. Parkhe , Teng-Fang Kuo , Zhenwen Ding
IPC分类号： H01L21/683 , H01L21/687 , C03C17/00 , G03F7/20 , H02N13/00
摘要： An electrostatic chuck comprises a ceramic body comprising an embedded electrode and a first ceramic coating on a surface of the ceramic body, wherein the first ceramic coating fills pores in the ceramic body. The electrostatic chuck further comprises a second ceramic coating on the first ceramic coating and a plurality of elliptical mesas on the second ceramic coating, the plurality of elliptical mesas having rounded edges.

7. 发明授权

US10679885B2 Substrate support assembly with deposited surface features 有权
公开(公告)号：US10679885B2
公开(公告)日：2020-06-09
申请号：US16007977
申请日：2018-06-13
申请人： Applied Materials, Inc.
发明人： Wendell Glenn Boyd, Jr. , Vijay D. Parkhe , Teng-Fang Kuo , Zhenwen Ding
IPC分类号： H01L21/683 , H01L21/687 , C03C17/00 , G03F7/20 , H02N13/00
摘要： An electrostatic chuck comprises a ceramic body comprising an embedded electrode and a first ceramic coating on a surface of the ceramic body, wherein the first ceramic coating fills pores in the ceramic body. The electrostatic chuck further comprises a second ceramic coating on the first ceramic coating and a plurality of elliptical mesas on the second ceramic coating, the plurality of elliptical mesas having rounded edges.

8. 发明申请

US20170140970A1 SUBSTRATE SUPPORT ASSEMBLY WITH DEPOSITED SURFACE FEATURES 有权
公开(公告)号：US20170140970A1
公开(公告)日：2017-05-18
申请号：US14944018
申请日：2015-11-17
申请人： Applied Materials, Inc.
发明人： Wendell Glenn Boyd, JR. , Vijay D. Parkhe , Teng-Fang Kuo , Zhenwen Ding
IPC分类号： H01L21/683 , C03C17/00
CPC分类号： H01L21/6833 , C03C17/00 , H01L21/6875 , H01L21/68757
摘要： A method of manufacturing an electrostatic chuck includes polishing a surface of a ceramic body of the electrostatic chuck to produce a polished surface and depositing a ceramic coating onto the polished surface of the ceramic body to produce a coated ceramic body. The method further includes disposing a mask over the coated ceramic coating, the mask comprising a plurality of elliptical holes and depositing a ceramic material through the plurality of elliptical holes of the mask to form a plurality of elliptical mesas on the coated ceramic body, wherein the plurality of elliptical mesas have rounded edges. The mask is then removed from the coated ceramic body and the plurality of elliptical mesas are polished.

9. 发明授权

US09240315B1 CVD oxide surface pre-conditioning by inductively coupled O2 plasma 有权
标题翻译：通过电感耦合O2等离子体进行CVD氧化物表面预处理
公开(公告)号：US09240315B1
公开(公告)日：2016-01-19
申请号：US14512312
申请日：2014-10-10
申请人： Applied Materials, Inc.
发明人： Ping Han Hsieh , Teng-Fang Kuo
IPC分类号： H01L21/02
CPC分类号： H01L21/02057 , H01L21/0206 , H01L21/02299
摘要： A method and apparatus for conditioning an oxide surface during a semiconductor device formation process is provided herein. One or more plasma processing operations are performed on a substrate having a fin structure and shallow trench isolation structure (STI) formed thereon. An oxygen containing plasma process may modify surfaces of the STI structure in preparation for an argon containing plasma process. The argon containing plasma process may form a first layer on the fin structure and STI structure and an ammonia fluoride containing plasma process may form a second layer on the first layer. The first and second layers may be removed from the substrate during a subsequent heating process to provide a cleaned fin structure suitable for subsequent processing operations.
摘要翻译：本文提供了一种在半导体器件形成过程中调节氧化物表面的方法和装置。在其上形成有翅片结构和浅沟槽隔离结构（STI）的衬底上执行一个或多个等离子体处理操作。含氧等离子体工艺可以修饰STI结构的表面，以制备含氩等离子体工艺。含氩等离子体工艺可以在翅片结构上形成第一层，STI结构和含氟化氨的等离子体工艺可以在第一层上形成第二层。在随后的加热过程中，第一层和第二层可以从衬底上移除，以提供适于后续处理操作的清洁的鳍结构。

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