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1. 发明授权

US11430656B2 Deposition of oxide thin films 有权
公开(公告)号：US11430656B2
公开(公告)日：2022-08-30
申请号：US15364024
申请日：2016-11-29
申请人： ASM IP HOLDING B.V.
发明人： Suvi P. Haukka , Elina Färm , Raija H. Matero , Eva E. Tois , Hidemi Suemori , Antti Juhani Niskanen , Sung-Hoon Jung , Petri Räisänen
IPC分类号： H01L21/02 , C23C16/04 , C23C16/40 , C23C16/455
摘要： Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

2. 发明授权

US11174550B2 Selective deposition on metal or metallic surfaces relative to dielectric surfaces 有权
公开(公告)号：US11174550B2
公开(公告)日：2021-11-16
申请号：US16575112
申请日：2019-09-18
申请人： ASM IP HOLDING B.V.
发明人： Suvi P. Haukka , Raija H. Matero , Elina Färm , Tom E. Blomberg
IPC分类号： C23C16/455 , C23C16/40 , C23C16/04
摘要： Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.

3. 发明授权

US11094535B2 Selective passivation and selective deposition 有权
公开(公告)号：US11094535B2
公开(公告)日：2021-08-17
申请号：US15892728
申请日：2018-02-09
申请人： ASM IP HOLDING B.V.
发明人： Eva E. Tois , Suvi P. Haukka , Raija H. Matero , Elina Färm , Delphine Longrie , Hidemi Suemori , Jan Willem Maes , Marko Tuominen , Shaoren Deng , Ivo Johannes Raaijmakers , Andrea Illiberi
IPC分类号： H01L21/02 , H01L21/311 , H01L21/56 , H01L21/67 , H01L21/768 , H01L23/31 , H01L23/522 , H01L23/528 , H01L23/532 , H01L21/32 , H01L21/027 , H01L21/321 , H01L21/3105
摘要： Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

4. 发明申请

US20200181766A1 DUAL SELECTIVE DEPOSITION 审中-公开
公开(公告)号：US20200181766A1
公开(公告)日：2020-06-11
申请号：US16594365
申请日：2019-10-07
申请人： ASM IP Holding B.V.
发明人： Suvi P. Haukka , Raija H. Matero , Eva Tois , Antti Niskanen , Marko Tuominen , Hannu Huotari , Viljami J. Pore
IPC分类号： C23C16/04 , C23C16/40 , C23C16/22 , C23C16/18 , H01L21/768 , H01L21/285 , C23C16/56 , C23C16/455 , C23C16/30 , C23C16/06 , C23C16/02
摘要： Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

5. 发明授权

US10428421B2 Selective deposition on metal or metallic surfaces relative to dielectric surfaces 有权
公开(公告)号：US10428421B2
公开(公告)日：2019-10-01
申请号：US15221453
申请日：2016-07-27
申请人： ASM IP HOLDING B.V.
发明人： Suvi P. Haukka , Raija H. Matero , Elina Färm , Tom E. Blomberg
IPC分类号： C23C16/455 , C23C16/04 , C23C16/40
摘要： Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.

6. 发明申请

US20180233350A1 SELECTIVE PASSIVATION AND SELECTIVE DEPOSITION 审中-公开
公开(公告)号：US20180233350A1
公开(公告)日：2018-08-16
申请号：US15892728
申请日：2018-02-09
申请人： ASM IP HOLDING B.V.
发明人： Eva E. Tois , Suvi P. Haukka , Raija H. Matero , Elina Färm , Delphine Longrie , Hidemi Suemori , Jan Willem Maes , Marko Tuominen , Shaoren Deng , Ivo Johannes Raaijmakers , Andrea Illiberi
IPC分类号： H01L21/02 , H01L21/311 , H01L21/56 , H01L21/768 , H01L21/67 , H01L23/528 , H01L23/532 , H01L23/522 , H01L23/31
CPC分类号： H01L21/0228 , H01L21/02118 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/0272 , H01L21/3105 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/32 , H01L21/321 , H01L21/56 , H01L21/67069 , H01L21/7682 , H01L21/76829 , H01L21/76834 , H01L21/76877 , H01L23/3171 , H01L23/5226 , H01L23/528 , H01L23/53238 , H01L23/53295
摘要： Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.

7. 发明申请

US20170037513A1 SELECTIVE DEPOSITION ON METAL OR METALLIC SURFACES RELATIVE TO DIELECTRIC SURFACES 审中-公开
标题翻译：与电介质表面相关的金属或金属表面的选择性沉积
公开(公告)号：US20170037513A1
公开(公告)日：2017-02-09
申请号：US15221453
申请日：2016-07-27
申请人： ASM IP HOLDING B.V.
发明人： Suvi P. Haukka , Raija H. Matero , Elina Färm , Tom E. Blomberg
IPC分类号： C23C16/455 , C23C16/06
CPC分类号： C23C16/45525 , C23C16/04 , C23C16/405
摘要： Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.
摘要翻译：提供了用于相对于衬底的第二电介质表面选择性地将材料沉积在衬底的第一金属或金属表面上的方法，或用于相对于第二氧化硅选择性地在衬底的第一金属氧化物表面上沉积金属氧化物表面。选择性沉积的材料可以是例如金属，金属氧化物，金属氮化物，金属硅化物，金属碳化物和/或电介质材料。在一些实施方案中，包含第一金属或金属表面和第二电介质表面的基底与第一气相金属卤化物反应物和第二反应物交替且顺序地接触。在一些实施方案中，包含第一金属氧化物表面和第二氧化硅表面的衬底与第一气相金属氟化物或氯化物反应物和水交替且顺序地接触。

8. 发明申请

US20160155635A1 ATOMIC LAYER DEPOSITION OF GeO2 审中-公开
标题翻译： GeO2的原子层沉积
公开(公告)号：US20160155635A1
公开(公告)日：2016-06-02
申请号：US14867833
申请日：2015-09-28
申请人： ASM IP Holding B.V.
发明人： Raija H. Matero
IPC分类号： H01L21/02
CPC分类号： H01L21/02172 , C23C16/40 , C23C16/45525 , H01L21/02112 , H01L21/02205 , H01L21/0228 , H01L21/02301 , H01L21/02304 , H01L29/785
摘要： Atomic layer deposition processes for forming germanium oxide thin films are provided. In some embodiments the ALD processes can include the following: contacting the substrate with a vapor phase tetravalent Ge precursor such that at most a molecular monolayer of the Ge precursor is formed on the substrate surface; removing excess Ge precursor and reaction by products, if any; contacting the substrate with a vapor phase oxygen precursor that reacts with the Ge precursor on the substrate surface; removing excess oxygen precursor and any gaseous by-products, and repeating the contacting and removing steps until a germanium oxide thin film of the desired thickness has been formed.
摘要翻译：提供了用于形成氧化锗薄膜的原子层沉积工艺。在一些实施方案中，ALD方法可以包括以下步骤：使基底与气相四价Ge前体接触，使得至多在该基底表面上形成Ge前体的分子单层; 去除多余的锗前体和产物反应（如果有的话）使基底与气相氧前体接触，该前体与基底表面上的Ge前体反应; 去除过量的氧前体和任何气体副产物，并重复接触和除去步骤直到形成所需厚度的氧化锗薄膜。

9. 发明授权

US10456808B2 Selective deposition of metals, metal oxides, and dielectrics 有权
公开(公告)号：US10456808B2
公开(公告)日：2019-10-29
申请号：US15877632
申请日：2018-01-23
申请人： ASM IP Holding B.V.
发明人： Suvi P. Haukka , Raija H. Matero , Eva Tois , Antti Niskanen , Marko Tuominen , Hannu Huotari , Viljami J. Pore , Ivo Raaijmakers
IPC分类号： C23C16/40 , B05D3/10 , C23C18/06 , C23C18/12 , C23C16/02 , C23C16/04 , C23C16/14 , C23C16/18 , C23C16/28
摘要： Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

10. 发明授权

US10443123B2 Dual selective deposition 有权
公开(公告)号：US10443123B2
公开(公告)日：2019-10-15
申请号：US16100855
申请日：2018-08-10
申请人： ASM IP Holding B.V.
发明人： Suvi P. Haukka , Raija H. Matero , Eva Tois , Antti Niskanen , Marko Tuominen , Hannu Huotari , Viljami J. Pore
IPC分类号： C23C16/04 , C23C16/02 , C23C16/06 , C23C16/40 , C23C16/30 , C23C16/455 , C23C16/56 , C23C16/18 , C23C16/22 , H01L21/285 , H01L21/768
摘要： Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

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