专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US11626314B2 Lift pin assembly, an electrostatic chuck and a processing apparatus where the electrostatic chuck is located 有权
公开(公告)号：US11626314B2
公开(公告)日：2023-04-11
申请号：US16538695
申请日：2019-08-12
申请人： Advanced Micro-Fabrication Equipment Inc. China
发明人： Tuqiang Ni , Rubin Ye , Manus Wong , Jie Liang , Leyi Tu , Ziyang Wu
IPC分类号： H01L21/68 , H01L21/687 , H01L21/683 , H01J37/32 , H01L21/67
摘要： Disclosed are a lift pin assembly, an electrostatic chuck with the lift pin assembly, and a processing apparatus where the electrostatic chuck is located. The lift pin assembly comprises: a lift pin, a lift pin receiving channel connected to a pressure control device, one end of the lift pin receiving channel proximal to a wafer being provided with a sealing ring, an upper surface of the sealing ring being in contact with a back face of the wafer during processing to avoid a gas at the back face of the wafer from entering the lift pin receiving channel, thereby enabling the pressure control device to independently control the pressure in the lift pin receiving channel.

2. 发明授权

US11515168B2 Capacitively coupled plasma etching apparatus 有权
公开(公告)号：US11515168B2
公开(公告)日：2022-11-29
申请号：US16716431
申请日：2019-12-16
申请人： Advanced Micro-Fabrication Equipment Inc. China
发明人： Yunwen Huang , Tuqiang Ni , Jie Liang , Jinlong Zhao
IPC分类号： H01L21/00 , H01L21/311 , H01J37/32 , H01L21/67
摘要： Disclosed is a capacitively coupled plasma etching apparatus, wherein an electrically conductive supporting rod where a lower electrode is fixed is connected to driving means, the driving means driving the electrically conductive support rod to move axially; besides, the lower electrode is fixed to the bottom of a chamber body via a retractable sealing part, causing the upper surface of the lower electrode to be hermetically sealed in an accommodation space in the chamber body; an electrical connection part is connected on the chamber body; the radio frequency current in the chamber body returns, via the electrical connection part, to the loop end of a radio frequency matcher. In this way, the lower electrode is fixed on the chamber body via the retractable sealing part, such that when the lower electrode is driven by the driving means to move up/down, the chamber body does not move along with it, and the radio frequency loop in the chamber body is in a steady state, thereby achieving stability of the radio frequency loop while implementing adjustability of the plate distance.

3. 发明申请

US20200083087A1 LIFT PIN ASSEMBLY, AN ELECTROSTATIC CHUCK AND A PROCESSING APPARATUS WHERE THE ELECTROSTATIC CHUCK IS LOCATED 审中-公开
公开(公告)号：US20200083087A1
公开(公告)日：2020-03-12
申请号：US16538695
申请日：2019-08-12
申请人： Advanced Micro-Fabrication Equipment Inc. China
发明人： Tuqiang Ni , Rubin Ye , Manus Wong , Jie Liang , Leyi Tu , Ziyang Wu
IPC分类号： H01L21/687 , H01L21/683 , H01L21/67 , H01J37/32
摘要： Disclosed are a lift pin assembly, an electrostatic chuck with the lift pin assembly, and a processing apparatus where the electrostatic chuck is located. The lift pin assembly comprises: a lift pin, a lift pin receiving channel connected to a pressure control device, one end of the lift pin receiving channel proximal to a wafer being provided with a sealing ring, an upper surface of the sealing ring being in contact with a back face of the wafer during processing to avoid a gas at the back face of the wafer from entering the lift pin receiving channel, thereby enabling the pressure control device to independently control the pressure in the lift pin receiving channel.

4. 发明授权

US11373843B2 Capacitively coupled plasma etching apparatus 有权
公开(公告)号：US11373843B2
公开(公告)日：2022-06-28
申请号：US16716357
申请日：2019-12-16
申请人： Advanced Micro-Fabrication Equipment Inc. China
发明人： Yunwen Huang , Tuqiang Ni , Jie Liang , Jinlong Zhao , Lei Wu
IPC分类号： H01J37/32 , H01L21/67
摘要： Disclosed is a capacitively coupled plasma etching apparatus, wherein a lower electrode is fixed to a lower end of an electrically conductive supporting rod, a telescope electrically conductive part is fixed to the lower end of the electrically conductive supporting rod, wherein the retractable electrically conductive part being telescoped along an axial direction of the electrically conductive supporting rod; besides, the lower end of the retractable electrically conductive part is electrically connected with the output end of the radio-frequency matcher via an electrically connection portion. In this way, the height of the lower electrode may be controlled through telescoping of the retractable electrically conductive part, such that the spacing between the upper and lower pads becomes adjustable. Besides, an inner electrically conductive ring is further provided at the outer side of the lower electrode; the inner electrically conductive ring is electrically connected with the chamber body via the retractable electrically conductive part; shielding is formed between the inner electrically conductive ring, the lower electrode, and a radio frequency return path in the cavity, avoiding instability of the radio frequency loop caused by the lower electrode radio frequency field during the movement process, thereby achieving stability of the radio-frequency loop while achieving adjustability of the inter-pad spacing.

5. 发明授权

US11189496B2 Plasma reactor for ultra-high aspect ratio etching and etching method thereof 有权
公开(公告)号：US11189496B2
公开(公告)日：2021-11-30
申请号：US16743748
申请日：2020-01-15
申请人： Advanced Micro-Fabrication Equipment Inc. China
发明人： Gerald Zheyao Yin , Yichuan Zhang , Jie Liang , Xingcai Su , Tuqiang Ni
IPC分类号： H01L21/311 , H01L21/67 , H01J37/32
摘要： Disclosed are a plasma reactor for ultra-high aspect ratio etching and an etching method therefor, wherein the plasma reactor comprises: a reaction chamber inside which a reaction space is formed; a base disposed at the bottom of the reaction space and configured for supporting a to-be-processed substrate; a gas showerhead disposed at the top inside the reaction chamber; wherein a first radio frequency power supply outputs a radio frequency power with a first frequency to the base or the gas showerhead so as to form and maintain plasma in the reaction chamber; and a second radio frequency power supply which outputs a radio frequency power with a second frequency to the base so as to control the ion energy incident to the base; wherein the first frequency is not less than 4 MHz, and the second frequency is not less than 10 KHz but not more than 300 KHz.

6. 发明申请

US20200251345A1 PLASMA REACTOR FOR ULTRA-HIGH ASPECT RATIO ETCHING AND ETCHING METHOD THEREOF 审中-公开
公开(公告)号：US20200251345A1
公开(公告)日：2020-08-06
申请号：US16743748
申请日：2020-01-15
申请人： Advanced Micro-Fabrication Equipment Inc. China
发明人： Gerald Zheyao Yin , Yichuan Zhang , Jie Liang , Xingcai Su , Tuqiang Ni
IPC分类号： H01L21/311 , H01J37/32 , H01L21/67
摘要： Disclosed are a plasma reactor for ultra-high aspect ratio etching and an etching method therefor, wherein the plasma reactor comprises: a reaction chamber inside which a reaction space is formed; a base disposed at the bottom of the reaction space and configured for supporting a to-be-processed substrate; a gas showerhead disposed at the top inside the reaction chamber; wherein a first radio frequency power supply outputs a radio frequency power with a first frequency to the base or the gas showerhead so as to form and maintain plasma in the reaction chamber; and a second radio frequency power supply which outputs a radio frequency power with a second frequency to the base so as to control the ion energy incident to the base; wherein the first frequency is not less than 4 MHz, and the second frequency is not less than 10 KHz but not more than 300 KHz.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式