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    • 1. 发明授权
    • Face image pickup device and method
    • 面部摄像装置及方法
    • US08295559B2
    • 2012-10-23
    • US12679284
    • 2008-11-07
    • Yukihiro MatsuuraAkira FujimotoTadashi AsanoYukihiko Yoshinaga
    • Yukihiro MatsuuraAkira FujimotoTadashi AsanoYukihiko Yoshinaga
    • G06K9/00G06K9/66H04N5/33
    • G06K9/00281G06K9/3266
    • There are provided a face image pickup device and a face image pickup method which can stably acquire a face image by appropriate illumination, and a program thereof. The face image pickup device comprises a camera which picks up an image of a face of a target person, an illumination light source which illuminates the face of the target person with near-infrared light having an arbitrary light amount, and a computer. The computer detects an area including an eye from the face image of the target person picked up by the camera. The computer measures a brightness distribution in the detected area. Thereafter, the computer controls the illumination light source so as to change the amount of near-infrared light based on the measured brightness distribution.
    • 提供了一种能够通过适当的照明稳定地获取面部图像的面部图像拾取装置和面部图像拾取方法及其程序。 面部摄像装置包括拍摄目标人物的脸部的照相机,以具有任意光量的近红外光照射目标人物的面部的照明光源以及计算机。 计算机从由照相机拾取的目标人物的脸部图像检测包括眼睛的区域。 计算机测量检测区域中的亮度分布。 此后,计算机控制照明光源,以便基于所测量的亮度分布来改变近红外光的量。
    • 8. 发明授权
    • Semiconductor light emitting device and method for manufacturing the same
    • 半导体发光器件及其制造方法
    • US08921887B2
    • 2014-12-30
    • US13221319
    • 2011-08-30
    • Kumi MasunagaRyota KitagawaAkira FujimotoKoji AsakawaTakanobu KamakuraShinji Nunotani
    • Kumi MasunagaRyota KitagawaAkira FujimotoKoji AsakawaTakanobu KamakuraShinji Nunotani
    • H01L33/62H01L33/38
    • H01L33/405H01L33/38H01L2933/0016H01L2933/0083
    • According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.
    • 根据一个实施例,半导体发光器件包括第一导电类型的第一半导体层,第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层,第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分 沿着从第一半导体层到第二半导体层的方向。 多个孔沿着该方向穿过金属部分,沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔,并且在第二半导体层和第二半导体层之间设置肖特基势垒 金属部分。