专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08296093B2 Semiconductor device with thermal fault detection 有权
标题翻译：具有热故障检测的半导体器件
公开(公告)号：US08296093B2
公开(公告)日：2012-10-23
申请号：US12649994
申请日：2009-12-30
申请人： Alberto Zanardi , Erich Scheikl , Robert Illing , Herbert Hopfgartner
发明人： Alberto Zanardi , Erich Scheikl , Robert Illing , Herbert Hopfgartner
IPC分类号： G01K1/08
CPC分类号： G01K3/005 , G01K13/00 , H01L2924/0002 , H03K2017/0806 , H01L2924/00
摘要： A semiconductor device includes a semiconductor chip including an active area. A temperature sensor arrangement provides a measurement signal dependent on the temperature in or close to the active area. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-temperature when the measurement signal exceeds the first threshold. The evaluation circuit is also configured to count the number of exceedances of the first threshold and to signal when a maximum number of exceedances is reached.
摘要翻译：半导体器件包括具有有源区的半导体芯片。温度传感器装置提供取决于活动区域中或附近的温度的测量信号。评估电路被配置为将测量信号与第一阈值进行比较，并且当测量信号超过第一阈值时发出过温信号。评估电路还被配置为对超过第一阈值的数量进行计数，并且当达到最大超出数时发出信号。

2. 发明授权

US08044674B2 Semiconductor device with thermal fault detection 有权
标题翻译：具有热故障检测的半导体器件
公开(公告)号：US08044674B2
公开(公告)日：2011-10-25
申请号：US12613761
申请日：2009-11-06
申请人： Alberto Zanardi , Erich Scheikl , Robert Illing , Herbert Hopfgartner
发明人： Alberto Zanardi , Erich Scheikl , Robert Illing , Herbert Hopfgartner
IPC分类号： G01R31/3187
CPC分类号： H03K17/0822 , G01K3/10 , H01L23/34 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device with a thermal fault detection is disclosed. According to one example of the invention such a semiconductor device includes a semiconductor chip including an active area. It further includes a temperature sensor arrangement that provides a measurement signal dependent on the temperature in or close to the active area, the measurement signal having a slope of a time-dependent steepness, and an evaluation circuit that is configured to provide an output signal that is representative of the steepness of the slope of the measurement signal and further configured to signal a steepness higher than a predefined threshold.
摘要翻译：公开了一种具有热故障检测的半导体器件。根据本发明的一个示例，这种半导体器件包括包括有源区的半导体芯片。它还包括温度传感器装置，该温度传感器装置提供取决于有效区域内或附近的温度的测量信号，测量信号具有时间依赖性陡度的斜率，以及评估电路，其被配置为提供输出信号，表示测量信号的斜率的陡度，并进一步被配置为发送高于预定阈值的陡度。

3. 发明授权

US08045310B2 Semiconductor device with overcurrent protection 有权
标题翻译：半导体器件具有过流保护功能
公开(公告)号：US08045310B2
公开(公告)日：2011-10-25
申请号：US12649974
申请日：2009-12-30
申请人： Alberto Zanardi , Erich Scheikl , Robert Illing , Herbert Hopfgartner
发明人： Alberto Zanardi , Erich Scheikl , Robert Illing , Herbert Hopfgartner
IPC分类号： H02H9/02
CPC分类号： H03K17/0822
摘要： A semiconductor device with an over-current detection feature is disclosed. According to an example of the invention the device includes: a semiconductor chip including a load current path that conducts a load current in response to an input signal activating the load current flow. A current sensor arrangement provides a measurement signal representing the load current. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-current when the measurement signal exceeds the first threshold after a delay time period starting from the activation of the load current flow has elapsed.
摘要翻译：公开了具有过电流检测特征的半导体器件。根据本发明的示例，该装置包括：半导体芯片，其包括响应于激活负载电流流动的输入信号而传导负载电流的负载电流路径。电流传感器装置提供表示负载电流的测量信号。评估电路被配置为在从负载电流流动的激活开始的延迟时间段过去之后，将测量信号与第一阈值进行比较，并且在测量信号超过第一阈值时发出过电流信号。

4. 发明申请

US20110109372A1 Semiconductor Device with Thermal Fault Detection 有权
标题翻译：具有热故障检测的半导体器件
公开(公告)号：US20110109372A1
公开(公告)日：2011-05-12
申请号：US12613761
申请日：2009-11-06
申请人： Alberto Zanardi , Erich Scheikl , Robert Illing , Herbert Hopfgartner
发明人： Alberto Zanardi , Erich Scheikl , Robert Illing , Herbert Hopfgartner
IPC分类号： G01K7/00
CPC分类号： H03K17/0822 , G01K3/10 , H01L23/34 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device with a thermal fault detection is disclosed. According to one example of the invention such a semiconductor device includes a semiconductor chip including an active area. It further includes a temperature sensor arrangement that provides a measurement signal dependent on the temperature in or close to the active area, the measurement signal having a slope of a time-dependent steepness, and an evaluation circuit that is configured to provide an output signal that is representative of the steepness of the slope of the measurement signal and further configured to signal a steepness higher than a predefined threshold.
摘要翻译：公开了一种具有热故障检测的半导体器件。根据本发明的一个示例，这种半导体器件包括包括有源区的半导体芯片。它还包括温度传感器装置，该温度传感器装置提供取决于有效区域内或附近的温度的测量信号，测量信号具有时间依赖性陡度的斜率，以及评估电路，其被配置为提供输出信号，表示测量信号的斜率的陡度，并进一步被配置为发送高于预定阈值的陡度。

5. 发明申请

US20110156799A1 Semiconductor Device with Thermal Fault Detection 有权
标题翻译：具有热故障检测的半导体器件
公开(公告)号：US20110156799A1
公开(公告)日：2011-06-30
申请号：US12649994
申请日：2009-12-30
申请人： Alberto Zanardi , Erich Scheikl , Robert IIIing , Herbert Hopfgartner
发明人： Alberto Zanardi , Erich Scheikl , Robert IIIing , Herbert Hopfgartner
IPC分类号： H01L37/00 , G01K13/00
CPC分类号： G01K3/005 , G01K13/00 , H01L2924/0002 , H03K2017/0806 , H01L2924/00
摘要： A semiconductor device includes a semiconductor chip including an active area. A temperature sensor arrangement provides a measurement signal dependent on the temperature in or close to the active area. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-temperature when the measurement signal exceeds the first threshold. The evaluation circuit is also configured to count the number of exceedances of the first threshold and to signal when a maximum number of exceedances is reached.
摘要翻译：半导体器件包括具有有源区的半导体芯片。温度传感器装置提供取决于活动区域中或附近的温度的测量信号。评估电路被配置为将测量信号与第一阈值进行比较，并且当测量信号超过第一阈值时发出过温信号。评估电路还被配置为对超过第一阈值的数量进行计数，并且当达到最大超出数时发出信号。

6. 发明授权

US07715160B2 Monitoring a load driven by a power semiconductor switch 有权
标题翻译：监控由功率半导体开关驱动的负载
公开(公告)号：US07715160B2
公开(公告)日：2010-05-11
申请号：US11926860
申请日：2007-10-29
申请人： Erich Scheikl , Alberto Zanardi
发明人： Erich Scheikl , Alberto Zanardi
IPC分类号： H02H3/26
CPC分类号： H02H3/12 , H03K17/0822 , H03K2217/0027
摘要： A method and an apparatus for monitoring a load driven by a power semiconductor switch. The method may comprise, for example: driving a control electrode of the power semiconductor switch, in such a way that a rise in the load current through the power semiconductor switch is effected after a delay time; generating a diagnostic current flowing through the load, wherein the diagnostic current brings about a voltage drop across the load before the delay time has elapsed; and evaluating the voltage drop across the load before the delay time has elapsed.
摘要翻译：一种用于监测由功率半导体开关驱动的负载的方法和装置。该方法可以包括例如：驱动功率半导体开关的控制电极，使得经过功率半导体开关的负载电流的上升在延迟时间之后实现; 产生流过负载的诊断电流，其中诊断电流在延迟时间过去之前在负载上引起电压降; 并在延迟时间过去之前评估负载下的电压降。

7. 发明申请

US20090109586A1 MONITORING A LOAD DRIVEN BY A POWER SEMICONDUCTOR SWITCH 有权
标题翻译：监控由功率半导体开关驱动的负载
公开(公告)号：US20090109586A1
公开(公告)日：2009-04-30
申请号：US11926860
申请日：2007-10-29
申请人： Erich Scheikl , Alberto Zanardi
发明人： Erich Scheikl , Alberto Zanardi
IPC分类号： H02H3/38 , H02H3/20 , G01R27/08
CPC分类号： H02H3/12 , H03K17/0822 , H03K2217/0027
摘要： A method and an apparatus for monitoring a load driven by a power semiconductor switch. The method may comprise, for example: driving a control electrode of the power semiconductor switch, in such a way that a rise in the load current through the power semiconductor switch is effected after a delay time; generating a diagnostic current flowing through the load, wherein the diagnostic current brings about a voltage drop across the load before the delay time has elapsed; and evaluating the voltage drop across the load before the delay time has elapsed.
摘要翻译：一种用于监测由功率半导体开关驱动的负载的方法和装置。该方法可以包括例如：驱动功率半导体开关的控制电极，使得经过功率半导体开关的负载电流的上升在延迟时间之后实现; 产生流过负载的诊断电流，其中诊断电流在延迟时间过去之前在负载上引起电压降; 并在延迟时间过去之前评估负载下的电压降。

8. 发明申请

US20090072887A1 Temperature dependent clamping of a transistor 有权
公开(公告)号：US20090072887A1
公开(公告)日：2009-03-19
申请号：US11854761
申请日：2007-09-13
申请人： Erich Scheikl , Heinz Zitta
发明人： Erich Scheikl , Heinz Zitta
IPC分类号： G05F1/10
CPC分类号： H03K17/0822 , H03K17/145 , H03K2017/0806
摘要： An apparatus, comprising a transistor having a source/drain node and a gate, and a circuit coupled between the source/drain node and the gate and configured to limit a voltage between the source/drain node and the gate to a clamping voltage such that the clamping voltage is reduced in response to a rising temperature of the transistor. Also, a method, comprising measuring a first temperature, measuring a second temperature, and reducing a clamped voltage between a source/drain node of a transistor and a gate of the transistor responsive to a difference between the first and second temperatures increasing.

9. 发明授权

US07528645B2 Temperature dependent clamping of a transistor 有权
标题翻译：晶体管的温度依赖钳位
公开(公告)号：US07528645B2
公开(公告)日：2009-05-05
申请号：US11854761
申请日：2007-09-13
申请人： Erich Scheikl , Heinz Zitta
发明人： Erich Scheikl , Heinz Zitta
IPC分类号： H01L35/00
CPC分类号： H03K17/0822 , H03K17/145 , H03K2017/0806
摘要： An apparatus, comprising a transistor having a source/drain node and a gate, and a circuit coupled between the source/drain node and the gate and configured to limit a voltage between the source/drain node and the gate to a clamping voltage such that the clamping voltage is reduced in response to a rising temperature of the transistor. Also, a method, comprising measuring a first temperature, measuring a second temperature, and reducing a clamped voltage between a source/drain node of a transistor and a gate of the transistor responsive to a difference between the first and second temperatures increasing.
摘要翻译：一种装置，包括具有源极/漏极节点和栅极的晶体管，以及耦合在源极/漏极节点和栅极之间并被配置为将源极/漏极节点和栅极之间的电压限制为钳位电压的电路，使得响应于晶体管的温度升高，钳位电压降低。而且，一种方法包括测量第一温度，测量第二温度，以及响应于第一和第二温度升高之间的差异，减小晶体管的源极/漏极节点与晶体管的栅极之间的钳位电压。

10. 发明授权

US07369382B2 Integrated circuit with an undervoltage detector 有权
标题翻译：具有欠压检测器的集成电路
公开(公告)号：US07369382B2
公开(公告)日：2008-05-06
申请号：US11304494
申请日：2005-12-14
申请人： Erich Scheikl , Heinz Zitta
发明人： Erich Scheikl , Heinz Zitta
IPC分类号： H02H3/24
CPC分类号： H01L27/0251 , H02H3/24
摘要： An integrated circuit arrangement includes connection terminals, an undervoltage detector, and at least one circuit unit. The connection terminals are configured to receive a supply voltage. The undervoltage detector is coupled between the connection terminals and is configured to compare the supply voltage with a select reference value selected from a first reference value and a second reference value. The second reference value is less than the first reference value. The undervoltage detector is further operable to produce a detector signal on the basis of a result of the comparison. The circuit unit is coupled between the connection terminals, and includes a first operating state with a first drawn current and a second operating state with a second drawn current. The second drawn current exceeds the first drawn current. The select reference value corresponds to an operating state of the at least one circuit unit.
摘要翻译：集成电路装置包括连接端子，欠压检测器和至少一个电路单元。连接端子被配置为接收电源电压。欠电压检测器耦合在连接端子之间，并被配置为将电源电压与从第一参考值和第二参考值中选择的选择参考值进行比较。第二个参考值小于第一个参考值。欠电压检测器还可操作以基于比较的结果产生检测器信号。电路单元耦合在连接端子之间，并且包括具有第一拉制电流的第一操作状态和具有第二拉出电流的第二操作状态。第二拉伸电流超过第一拉伸电流。所述选择参考值对应于所述至少一个电路单元的操作状态。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式