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1. 发明授权

US10720335B2 Chemistries for TSV/MEMS/power device etching 有权
公开(公告)号：US10720335B2
公开(公告)日：2020-07-21
申请号：US16114371
申请日：2018-08-28
申请人： American Air Liquide, Inc. , L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , Air Liquide Electronics U.S. LP
发明人： Peng Shen , Christian Dussarrat , Curtis Anderson , Rahul Gupta , Vincent M. Omarjee , Nathan Stafford
IPC分类号： H01L21/3065 , C09K13/00
摘要： Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1≤x

2. 发明授权

US09938303B2 Organosilane precursors for ALD/CVD silicon-containing film applications 有权
公开(公告)号：US09938303B2
公开(公告)日：2018-04-10
申请号：US14415657
申请日：2013-07-19
申请人： American Air Liquide, Inc.
发明人： Christian Dussarrat , Glenn Kuchenbeiser , Venkateswara R. Pallem
IPC分类号： C23C16/00 , C07F7/02 , C23C16/30 , C23C16/34 , C23C16/36 , C23C16/40 , B05D1/00 , H01L21/02 , C23C16/44 , C23C16/455
CPC分类号： C07F7/025 , B05D1/60 , C23C16/30 , C23C16/345 , C23C16/36 , C23C16/401 , C23C16/402 , C23C16/44 , C23C16/45553 , H01L21/02216 , H01L21/02271 , H01L21/0228 , H01L21/02532
摘要： Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.

3. 发明授权

US09076648B2 Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films 有权
标题翻译：含镧系元素前体的制备和含镧系元素的膜的沉积
公开(公告)号：US09076648B2
公开(公告)日：2015-07-07
申请号：US13940654
申请日：2013-07-12
申请人： American Air Liquide, Inc.
发明人： Venkateswara R. Pallem , Christian Dussarrat
IPC分类号： H01L35/24 , H01L21/02 , C07C257/14 , C07F17/00 , C23C16/18 , C23C16/40 , C23C16/455
CPC分类号： H01L21/02192 , C07C257/14 , C07F17/00 , C23C16/18 , C23C16/409 , C23C16/45531
摘要： Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.
摘要翻译：本文描述了用于沉积含稀土金属的层的方法和组合物。通常，所公开的方法使用诸如化学气相沉积或原子层沉积的沉积方法沉积包含稀土含量化合物的前体化合物。所公开的前体化合物包括具有至少一个脂族基团作为取代基的环戊二烯基配体和脒配体。

4. 发明申请

US20130040056A1 HETEROLEPTIC IRIDIUM PRECURSORS TO BE USED FOR THE DEPOSITION OF IRIDIUM-CONTAINING FILMS 有权
标题翻译：用于沉积含薄荷膜的异种红外光谱仪
公开(公告)号：US20130040056A1
公开(公告)日：2013-02-14
申请号：US13645255
申请日：2012-10-04
申请人： American Air Liquide, Inc. , L'Air Liquide, Societe Anonyme pour 'Etude et l'Ex
发明人： Julien GATINEAU , Christian Dussarrat
IPC分类号： C23C16/06
CPC分类号： C07F17/02 , C23C16/18 , C23C16/45553
摘要： The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula: XIrYA, wherein A is equal to 1 or 2 and i) when A is 1, X is a dienyl ligand and Y is a diene ligand; ii) when A is 2, a) X is a dienyl ligand and Y is selected from CO and an ethylene ligand, b) X is a ligand selected from H, alkyl, alkylamides, alkoxides, alkylsilyls, alkylsilylamides, alkylamino, and fluoroalkyl and each Y is a diene ligand, and c) X is a dienyl ligand and Y is a diene ligand; reacting the at least one iridium containing precursor in the reactor at a temperature equal to or greater than 100° C.; and depositing an iridium containing film formed from the reaction of the at least one iridium containing precursor onto the at least one substrate.
摘要翻译：本发明提供了一种用于在基材上沉积含铱膜的方法，该方法包括以下步骤：在反应器中提供至少一个基材; 将具有下式的至少一种含有铱的前体引入反应器中：其中A等于1或2，i）当A为1时，X为二烯基配体，Y为二烯配体; ii）当A为2时，a）X为二烯基配体，Y选自CO和乙烯配体，b）X为选自H，烷基，烷基酰胺，烷氧基化物，烷基甲硅烷基，烷基甲硅烷基酰胺，烷基氨基和氟代烷基的配体，以及每个Y是二烯配体，和c）X是二烯基配体，Y是二烯配体; 在等于或大于100℃的温度下使反应器中的至少一种含铱前体反应; 以及将由所述至少一种含铱前体的反应形成的含铱膜沉积在所述至少一个基底上。

5. 发明授权

US10381240B2 Fluorocarbon molecules for high aspect ratio oxide etch 有权
公开(公告)号：US10381240B2
公开(公告)日：2019-08-13
申请号：US15264772
申请日：2016-09-14
申请人： American Air Liquide, Inc.
发明人： Curtis Anderson , Rahul Gupta , Vincent M. Omarjee , Nathan Stafford , Christian Dussarrat
IPC分类号： H01L21/3213 , H01L21/3065 , C07C17/263 , H01L21/02 , C07C19/08 , H01L21/311 , C07C21/18 , C07C23/06
摘要： Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

6. 发明申请

US20180366336A1 CHEMISTRIES FOR TSV/MEMS/POWER DEVICE ETCHING 审中-公开
公开(公告)号：US20180366336A1
公开(公告)日：2018-12-20
申请号：US16114371
申请日：2018-08-28
申请人： American Air Liquide, Inc. , L'Air Liquide, Société Anonyme pour l'Etude et l'Etude et l'Exploitation des Procédés Georges Cla , Air Liquide Electronics U.S. LP
发明人： Peng Shen , Christian Dussarrat , Curtis Anderson , Rahul Gupta , Vincent M. Omarjee , Nathan Stafford
IPC分类号： H01L21/3065 , C09K13/00
摘要： Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1≤x

7. 发明申请

US20150166577A1 ORGANOSILANE PRECURSORS FOR ALD/CVD SILICON-CONTAINING FILM APPLICATIONS 审中-公开
标题翻译：用于ALD / CVD含硅膜应用的有机硅前驱体
公开(公告)号：US20150166577A1
公开(公告)日：2015-06-18
申请号：US14415657
申请日：2013-07-19
申请人： American Air Liquide, Inc.
发明人： Christian Dussarrat , Glenn Kuchenbeiser , Venkateswara R. Pallem
IPC分类号： C07F7/02 , H01L21/02
CPC分类号： C07F7/025 , B05D1/60 , C23C16/30 , C23C16/345 , C23C16/36 , C23C16/401 , C23C16/402 , C23C16/44 , C23C16/45553 , H01L21/02216 , H01L21/02271 , H01L21/0228 , H01L21/02532
摘要： Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.
摘要翻译：公开了含Si的薄膜形成前体，其合成方法及其使用方法使用蒸镀法制造半导体，光伏，LCD-TFT，平板型器件，耐火材料，或航空。

8. 发明授权

US08664446B1 Purification of trimethylamine 有权
标题翻译：三甲胺的纯化
公开(公告)号：US08664446B1
公开(公告)日：2014-03-04
申请号：US13731297
申请日：2012-12-31
申请人： American Air Liquide, Inc.
发明人： Brian Besancon , Christian Dussarrat , Nathan Stafford , Paul Jantzen
IPC分类号： C07C209/84 , C07C209/86
CPC分类号： C07C209/84 , C07C211/04
摘要： Methods of purifying NMe3 by removing N2, NH2Me, NH3, and H2O are disclosed.
摘要翻译：公开了通过除去N 2，NH 2 Me，NH 3和H 2 O来净化NMe 3的方法。

9. 发明申请

US20130164947A1 TITANIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION 有权
标题翻译：含钛的前驱体用于蒸发沉积
公开(公告)号：US20130164947A1
公开(公告)日：2013-06-27
申请号：US13772737
申请日：2013-02-21
申请人： American Air Liquide, Inc.
发明人： Venkateswara R. Pallem , Christian Dussarrat
IPC分类号： H01L21/02 , C07F7/28
CPC分类号： H01L21/02205 , C07F7/003 , C07F7/28 , C23C16/18 , C23C16/40 , C23C16/45553 , H01L21/02186 , H01L21/02271 , H01L21/28229
摘要： Disclosed are titanium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit titanium, titanium oxide, strontium-titanium oxide, and barium strontium titanate containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.
摘要翻译：公开了含钛前体及其合成方法。该化合物可用于使用诸如化学气相沉积或原子层沉积的气相沉积方法沉积钛，氧化钛，锶 - 氧化钛和含钛酸钡锶层。

10. 发明授权

US11152223B2 Fluorocarbon molecules for high aspect ratio oxide etch 有权
公开(公告)号：US11152223B2
公开(公告)日：2021-10-19
申请号：US16502181
申请日：2019-07-03
申请人： American Air Liquide, Inc.
发明人： Curtis Anderson , Rahul Gupta , Vincent M. Omarjee , Nathan Stafford , Christian Dussarrat
IPC分类号： H01L21/321 , H01L21/3213 , H01L21/3065 , C07C17/263 , H01L21/02 , C07C19/08 , H01L21/311 , C07C21/18 , C07C23/06
摘要： Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

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