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1. 发明授权

US09450545B2 Dual-band semiconductor RF amplifier device 有权
标题翻译：双频半导体射频放大器
公开(公告)号：US09450545B2
公开(公告)日：2016-09-20
申请号：US14267715
申请日：2014-05-01
申请人： Ampleon Netherlands B.V.
发明人： Venkata Gutta , Anna Walensieniuk , Rob Volgers
IPC分类号： H03F3/04 , H03F3/193 , H03F3/195 , H03F3/21
CPC分类号： H03F3/193 , H03F3/195 , H03F3/21 , H03F2200/111 , H03F2200/387 , H03F2200/429
摘要： There is described a dual-band semiconductor RF amplifier device. The device comprises (a) a transistor (205) having an output capacitance (CO), (b) a first shunt element (210) arranged in parallel with the output capacitance, the first shunt element comprising a first shunt inductor (L1) connected in series with a first shunt capacitor (C1), and (c) a second shunt element (220) arranged in parallel with the first shunt capacitor, the second shunt element comprising a second shunt inductor (L2) connected in series with a second shunt capacitor (C2), wherein the capacitance of the second shunt capacitor (C2) is at least two times the capacitance of the first shunt capacitor (C1). Furthermore, there is described a method of manufacturing a dual-band semiconductor RF amplifier device and a dual-band RF amplifier comprising a plurality of such amplifier devices.
摘要翻译：描述了一种双频带半导体RF放大器装置。该器件包括（a）具有输出电容（CO）的晶体管（205），（b）与输出电容并联布置的第一分流元件（210），第一分流元件包括连接的第一并联电感器与第一分流电容器（C1）串联，和（c）与第一分流电容器并联布置的第二分流元件（220），第二分流元件包括与第二分流器串联连接的第二并联电感器（L2）电容器（C2），其中所述第二并联电容器（C2）的电容为所述第一并联电容器（C1）的电容的至少两倍。此外，描述了制造双频半导体RF放大器装置的方法和包括多个这种放大器装置的双频带RF放大器。

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