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1. 发明授权

US11189472B2 Cathode assembly having a dual position magnetron and centrally fed coolant 有权
公开(公告)号：US11189472B2
公开(公告)日：2021-11-30
申请号：US15651791
申请日：2017-07-17
申请人： APPLIED MATERIALS, INC.
发明人： Irena H. Wysok , Kirankumar Savandaiah , Anthony Chih-Tung Chan , Jiao Song , Prashant Prabhu
IPC分类号： H01J37/34 , C23C14/35 , C23C14/34
摘要： Embodiments of a magnetron assembly and a processing system incorporating same are provided herein. In some embodiments, a magnetron assembly includes a body extending along a central axis of the magnetron assembly; a coolant feed structure extending through the body along the central axis to provide a coolant along the central axis to an area beneath the coolant feed structure; and a rotatable magnet assembly coupled to a bottom of the body and having a plurality of magnets.

2. 发明授权

US10199204B2 Target retaining apparatus 有权
公开(公告)号：US10199204B2
公开(公告)日：2019-02-05
申请号：US14600915
申请日：2015-01-20
申请人： APPLIED MATERIALS, INC.
发明人： Srinivasa Yedla , Sundarapandian Reddy , Uday Pai , Kirankumar Savandaiah , Thanh X. Nguyen , Muhammad M. Rasheed , Jallepally Ravi
IPC分类号： H01J37/34
摘要： Embodiments of target retaining apparatus and substrate processing chambers incorporating same are provided herein. In some embodiments, a target retaining apparatus includes a housing including a first slot and a second slot; a cam movably disposed in the housing, wherein movement of the cam is constrained along the first slot; a retaining arm movably coupled to the cam, wherein movement of the retaining arm is constrained along the second slot; a linking member including a first end rotatably coupled to the cam and a second end rotatably coupled to the retaining arm; and a biasing element biasing the cam towards a first position in which the retaining arm extends away from the housing.

3. 发明授权

US09472443B2 Selectively groundable cover ring for substrate process chambers 有权
标题翻译：用于基板处理室的选择性可底座盖环
公开(公告)号：US09472443B2
公开(公告)日：2016-10-18
申请号：US13831363
申请日：2013-03-14
申请人： APPLIED MATERIALS, INC.
发明人： Muhammad M. Rasheed , Kirankumar Savandaiah , William Johanson , Zhenbin Ge , Goichi Yoshidome
IPC分类号： C23C14/34 , H01L21/687 , H01J37/32 , C23C14/50
CPC分类号： H01L21/68735 , C23C14/34 , C23C14/50 , H01J37/32651 , H01J37/32715
摘要： Embodiments of a process kit for substrate process chambers are provided herein. In some embodiments, a process kit for a substrate process chamber may include a ring having a body and a lip extending radially inward from the body, wherein the body has a first annular channel formed in a bottom of the body; an annular conductive shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first annular channel of the ring; and a conductive member electrically coupling the ring to the conductive shield when the ring is disposed on the conductive shield.
摘要翻译：本文提供了用于基板处理室的处理套件的实施例。在一些实施例中，用于衬底处理室的处理套件可以包括具有本体和从主体径向向内延伸的唇缘的环，其中主体具有形成在主体的底部中的第一环形通道; 环形导电屏蔽件，其具有下部向内延伸的凸缘，其终止于构造成与环的第一环形通道相接合的向上延伸部分; 以及当所述环设置在所述导电屏蔽上时，所述导电构件将所述环电耦合到所述导电屏蔽层。

4. 发明申请

US20160189941A1 METHODS AND APPARATUS FOR NODULE CONTROL IN A TITANIUM-TUNGSTEN TARGET 有权
标题翻译： TITANIUM-TUNGSTEN目标中的控制方法和装置
公开(公告)号：US20160189941A1
公开(公告)日：2016-06-30
申请号：US14587967
申请日：2014-12-31
申请人： APPLIED MATERIALS, INC.
发明人： Junqi Wei , Zhitao Cao , Yueh Sheng Ow , Ananthkrishna Jupudi , Kirankumar Savandaiah , Xin Wang , Sriskantharajah Thirunavukarasu
IPC分类号： H01J37/34 , H01J37/32 , B22F3/12
CPC分类号： H01J37/3429 , B22F3/12 , B22F2998/10 , B22F2999/00 , C22C1/0458 , C22C14/00 , C22C27/04 , C23C14/3414 , H01J37/3426 , H01J37/3491 , B22F1/0003 , B22F3/02 , B22F3/10 , B22F2003/247 , B22F2202/13
摘要： Embodiments of the present disclosure include methods and apparatus for controlling titanium-tungsten (TiW) target nodule formation. In some embodiments, a target includes: a source material comprising predominantly titanium (Ti) and tungsten (W), formed from a mixture of titanium powder and tungsten powder, wherein a grain size of a predominant quantity of the titanium powder is less than or equal to a grain size of a predominant quantity of the tungsten powder.
摘要翻译：本公开的实施例包括用于控制钛 - 钨（TiW）靶结节形成的方法和装置。在一些实施方案中，靶包括：主要由钛粉末和钨粉末的混合物形成的钛（Ti）和钨（W）的源材料，其中主要量的钛粉末的晶粒尺寸小于或等于等于主要量的钨粉的粒度。

5. 发明授权

US09953812B2 Integrated process kit for a substrate processing chamber 有权
公开(公告)号：US09953812B2
公开(公告)日：2018-04-24
申请号：US15287675
申请日：2016-10-06
申请人： APPLIED MATERIALS, INC.
发明人： William Johanson , Kirankumar Savandaiah , Xin Wang , Prashant Prabhu
IPC分类号： H01J37/34 , H01J37/32 , C23C14/34 , C23C14/56
CPC分类号： H01J37/3441 , C23C14/3407 , C23C14/564 , H01J37/32477 , H01J37/32522 , H01J37/32642 , H01J37/32651
摘要： Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes: a one-piece process kit shield having a cylindrical body having an upper portion and a lower portion; an adapter section extending radially outward and having a resting surface to support the one-piece process kit shield on walls of a chamber and a sealing surface on which a chamber lid rests to seal off an inner volume of the chamber when the one-piece process kit shield is placed in the chamber; a heat transfer channel extending through the adapter section; and a protruding section extending radially inward from the lower portion; a resting bracket having an upper portion coupled to the adapter section and a lower portion extending radially inward; a cover ring disposed beneath the protruding section; and a deposition ring disposed beneath the cover ring.

6. 发明授权

US09779971B2 Methods and apparatus for rapidly cooling a substrate 有权
公开(公告)号：US09779971B2
公开(公告)日：2017-10-03
申请号：US14251134
申请日：2014-04-11
申请人： APPLIED MATERIALS, INC.
发明人： Jallepally Ravi , Steven V. Sansoni , Kirankumar Savandaiah
IPC分类号： H01L21/67
CPC分类号： H01L21/67109
摘要： Embodiments of methods and apparatus for rapidly cooling a substrate are provided herein. In some embodiments, a cooling chamber for cooling a substrate includes a chamber body having an inner volume; a substrate support disposed in the chamber and having a support surface to support a substrate; a plate disposed in the chamber body opposite the substrate support, wherein the substrate support and the plate are movable with respect to each other between a first position and a second position, wherein when in the first position the substrate support and the plate are disposed away from each other such that the support surface is exposed to a first volume within the inner volume, wherein when in the second position the substrate support and the plate are disposed adjacent to each other such that the support surface is exposed to a second volume within the inner volume, and wherein the second volume is smaller than the first volume; a plurality of flow channels disposed in one or more of the plate or the substrate support to flow a coolant; and a gas inlet to provide a gas into the second volume.

7. 发明授权

US09343274B2 Process kit shield for plasma enhanced processing chamber 有权
标题翻译：用于等离子体增强处理室的工艺套件屏蔽
公开(公告)号：US09343274B2
公开(公告)日：2016-05-17
申请号：US14178146
申请日：2014-02-11
申请人： APPLIED MATERIALS, INC.
发明人： Muhammad Rasheed , Donny Young , Kirankumar Savandaiah , Uday Pai
IPC分类号： C23C14/56 , C23C14/34 , C23C16/44 , C23C14/35 , H01J37/34 , H01J37/32 , H01J19/54
CPC分类号： H01J37/3411 , C23C14/34 , C23C14/35 , C23C14/564 , C23C16/44 , H01J19/54 , H01J37/32495 , Y10T428/12528
摘要： Apparatus for processing substrates is disclosed herein. In some embodiments, an apparatus includes a first shield having a first end, a second end, and one or more first sidewalls disposed between the first and second ends, wherein the first end is configured to interface with a first support member of a process chamber to support the first shield in a position such that the one or more first sidewalls surround a first volume of the process chamber; and a second shield having a first end, a second end, and one or more second sidewalls disposed between the first and second ends of the second shield and about the first shield, wherein the first end of the second shield is configured to interface with a second support member of the process chamber to support the second shield such that the second shield contacts the first shield to form a seal therebetween.
摘要翻译：本文公开了用于处理衬底的设备。在一些实施例中，一种装置包括具有第一端，第二端和设置在第一和第二端之间的一个或多个第一侧壁的第一屏蔽，其中第一端构造成与处理室的第一支撑构件以将所述第一屏蔽件支撑在使得所述一个或多个第一侧壁围绕所述处理室的第一体积的位置; 以及第二屏蔽，其具有设置在所述第二屏蔽件的第一端和第二端之间并且围绕所述第一屏蔽的第一端，第二端和一个或多个第二侧壁，其中所述第二屏蔽的所述第一端被配置为与处理室的第二支撑构件以支撑第二屏蔽，使得第二屏蔽件接触第一屏蔽件以在其间形成密封。

8. 发明授权

US09096926B2 Adjustable process spacing, centering, and improved gas conductance 有权
标题翻译：可调节的工艺间距，居中和改善气体导电性
公开(公告)号：US09096926B2
公开(公告)日：2015-08-04
申请号：US14042177
申请日：2013-09-30
申请人： Applied Materials, Inc.
发明人： Lara Hawrylchak , Kirankumar Savandaiah
IPC分类号： C23C14/34 , C23C16/458 , C23C14/56 , H01J37/32 , H01L21/687
CPC分类号： H01J37/3411 , C23C14/34 , C23C14/564 , C23C16/4585 , H01J37/32477 , H01J37/32623 , H01L21/68714 , H01L21/68721 , Y10T428/12528
摘要： Embodiments of the invention generally provide a process kit for use in a physical deposition chamber (PVD) chamber. In one embodiment, the process kit provides adjustable process spacing, centering between the cover ring and the shield, and controlled gas flow between the cover ring and the shield contributing to uniform gas distribution, which promotes greater process uniformity and repeatability along with longer chamber component service life.
摘要翻译：本发明的实施方案通常提供用于物理沉积室（PVD）室的工艺组件。在一个实施例中，处理套件提供可调整的工艺间隔，在盖环和屏蔽之间居中，并且在盖环和屏蔽之间的受控气流有助于均匀的气体分布，这促进了更大的工艺均匀性和重复性以及更长的室部件使用寿命。

9. 外观设计

USD894137S1 Target profile for a physical vapor deposition chamber target 有权
公开(公告)号：USD894137S1
公开(公告)日：2020-08-25
申请号：US29690617
申请日：2019-05-09
申请人： APPLIED MATERIALS, INC.
设计人： William Johanson , Kirankumar Savandaiah , Anthony Chih-Tang Chan , Siew Kit Hoi , Prashant Prabhakar Prabhu

10. 发明授权

US10262877B2 Apparatus and method for reducing substrate sliding in process chambers 有权
公开(公告)号：US10262877B2
公开(公告)日：2019-04-16
申请号：US15457981
申请日：2017-03-13
申请人： APPLIED MATERIALS, INC.
发明人： Sriskantharajah Thirunavukarasu , Kirankumar Savandaiah , Cheng-Hsiung Tsai , Kai Liang Liew
IPC分类号： H01L21/67 , H01L21/687 , H01L21/306 , C23C16/50 , C23C14/50 , C23C16/458 , H01J37/32 , H01L21/683 , H01J37/34
摘要： Methods and apparatus for processing a substrate are disclosed herein. In some embodiments, an apparatus for processing a substrate includes: a substrate support having a substrate supporting surface including an electrically insulating coating; a substrate lift mechanism including a plurality of lift pins configured to move between a first position disposed beneath the substrate supporting surface and a second position disposed above the substrate supporting surface; and a connector configured to selectively provide an electrical connection between the substrate support and the substrate lift mechanism before the plurality of lift pins reach a plane of the substrate supporting surface.

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