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1. 发明申请

US20220344135A1 HIGH-TEMPERATURE CHAMBER AND CHAMBER COMPONENT CLEANING AND MAINTENANCE METHOD AND APPARATUS 有权
公开(公告)号：US20220344135A1
公开(公告)日：2022-10-27
申请号：US17242059
申请日：2021-04-27
申请人： Applied Materials, Inc.
发明人： Shuran SHENG , Lin ZHANG , Jiyong HUANG , Jang Seok OH , Joseph C. WERNER , Nitin KHURANA , Ganesh BALASUBRAMANIAN , Jennifer Y. SUN , Xinhai HAN , Zhijun JIANG
IPC分类号： H01J37/32 , B08B7/00 , C23C16/44
摘要： Examples disclosed herein relate to a method and apparatus for cleaning and repairing a substrate support having a heater disposed therein. A method includes (a) cleaning a surface of a substrate support having a bulk layer, the substrate support is disposed in a processing environment configured to process substrates. The cleaning process includes forming a plasma at a high temperature from a cleaning gas mixture having a fluorine containing gas and oxygen. The method includes (b) removing oxygen radicals from the processing environment with a treatment plasma formed from a treatment gas mixture. The treatment gas mixture includes the fluorine containing gas. The method further includes (c) repairing an interface of the substrate support and the bulk layer with a post-treatment plasma. The post-treatment plasma is formed from a post-treatment gas mixture including a nitrogen containing gas. The high temperature is greater than or equal to about 500 degrees Celsius.

2. 发明申请

US20200370174A1 SUBSTRATE SUPPORT COVER FOR HIGH-TEMPERATURE CORROSIVE ENVIRONMENT 审中-公开
公开(公告)号：US20200370174A1
公开(公告)日：2020-11-26
申请号：US16806656
申请日：2020-03-02
申请人： Applied Materials, Inc.
发明人： Shuran SHENG , Lin ZHANG , Jiyong HUANG , Joseph C. WERNER , Stanley WU , Mahesh Adinath KANAWADE , Yikai CHEN , Yixing LIN , Ying MA
IPC分类号： C23C16/44 , C01F17/265
摘要： Embodiments of the present disclosure generally relate to an apparatus and a method for cleaning a processing chamber. In one embodiment, a substrate support cover includes a bulk member coated with a fluoride coating. The substrate support cover is placed on a substrate support disposed in the processing chamber during a cleaning process. The fluoride coating does not react with the cleaning species. The substrate support cover protects the substrate support from reacting with the cleaning species, leading to reduced condensation formed on chamber components, which in turn leads to reduced contamination of the substrate in subsequent processes.

3. 发明申请

US20170191161A1 COOLED GAS FEED BLOCK WITH BAFFLE AND NOZZLE FOR HDP-CVD 审中-公开
公开(公告)号：US20170191161A1
公开(公告)日：2017-07-06
申请号：US15141443
申请日：2016-04-28
申请人： Applied Materials, Inc.
发明人： Govinda RAJ , Hanish KUMAR , Lin ZHANG , Stanley WU
IPC分类号： C23C16/455 , C23C16/44 , H01J37/32
摘要： Techniques are disclosed for methods and apparatuses for reducing particle contamination formation in a high temperature processing chamber with a cooled gas feed block. The cooled gas feed has a body. The body has a main center portion having a top surface and a bottom surface. The body also has a flange extending outward from the bottom surface of the main center portion. A gas channel is disposed through the body. The gas channel has an inlet formed in the top surface of the main center portion and an outlet formed in the bottom surface of the main center portion. The body also has a center coolant channel. The center coolant channel has a first portion having an inlet formed in the top surface of the main center portion, and a second portion coupled to the first portion, the second portion having an outlet formed a sidewall of the flange.

4. 发明申请

US20170162370A1 ARCING DETECTION APPARATUS FOR PLASMA PROCESSING 审中-公开
公开(公告)号：US20170162370A1
公开(公告)日：2017-06-08
申请号：US15348579
申请日：2016-11-10
申请人： Applied Materials, Inc.
发明人： Lin ZHANG , Rongping WANG , Jian J. CHEN , Michael S. COX , Andrew V. LE
IPC分类号： H01J37/32
CPC分类号： H01J37/32944 , H01J37/32082 , H01J37/32715
摘要： Embodiments described herein generally relate to a plasma processing chamber and a detection apparatus for arcing events. In one embodiment, an arcing detection apparatus is disclosed herein. The arcing detection apparatus comprises a probe, a detection circuit, and a data log system. The probe positioned partially exposed to an interior volume of a plasma processing chamber. The detection circuit is configured to receive an analog signal from the probe and output an output signal scaling events present in the analog signal. The data log system is communicatively coupled to receive the output signal from the detection circuit. The data log system is configured to track arcing events occurring in the interior volume.

5. 发明申请

US20170159176A1 ADVANCED COATING METHOD AND MATERIALS TO PREVENT HDP-CVD CHAMBER ARCING 审中-公开
公开(公告)号：US20170159176A1
公开(公告)日：2017-06-08
申请号：US15334431
申请日：2016-10-26
申请人： Applied Materials, Inc.
发明人： Lin ZHANG , Xuesong LU , Andrew V. LE , Jang Seok OH
IPC分类号： C23C16/455 , C23C16/40 , C23C16/34 , C23C16/505
CPC分类号： C23C16/4558 , C23C16/34 , C23C16/403 , C23C16/4404 , C23C16/45536 , C23C16/45544 , C23C16/505 , C23C16/507 , H01J37/3244 , H01J37/32449
摘要： Embodiments described herein relate to apparatus and coating methods to reduce chamber arcing, for example, in HDP-CVD, PECVD, PE-ALD and Etch chambers. The apparatus include a ring shaped gas distributor used for in-situ deposition of coating materials, and a process chamber including the same. The ring shaped gas distributor includes a ring shaped body having at least one gas entrance port disposed on a first side thereof and a plurality of gas distribution ports disposed on a first surface of the ring shaped body. The plurality of gas distribution ports are arranged in a plurality of evenly distributed rows. The plurality of gas distribution ports in a first row of the plurality of evenly distributed rows is adapted to direct gas at an exit angle different from an exit angle of the plurality of gas distribution ports in a second row of the plurality of evenly distributed rows.

6. 发明申请

US20170152968A1 CORROSION CONTROL FOR CHAMBER COMPONENTS 审中-公开
公开(公告)号：US20170152968A1
公开(公告)日：2017-06-01
申请号：US15110714
申请日：2016-04-06
申请人： Applied Materials, Inc.
发明人： Govinda RAJ , Hanish KUMAR , Lin ZHANG , Stanley WU
IPC分类号： F16K41/10 , H01J37/32 , F16L11/15 , H01L21/687
CPC分类号： F16K41/10 , C23C16/4404 , F16L11/15 , H01J37/32477 , H01J37/32495 , H01L21/68757 , H01L21/68792
摘要： Implementations described herein protect a chamber components from corrosive cleaning gases used at high temperatures. In one embodiment, a chamber component includes at least a bellows that includes a top mounting flange coupled to a bottom mounting flange by a tubular accordion structure. A coating is disposed on an exterior surface of at least the tubular accordion structure. The coating includes of at least one of polytetrafluoroethylene, parylene C, parylene D, diamond-like carbon (DLC), yttria stabilized zirconia, nickel, alumina, or aluminum silicon magnesium yttrium oxygen compound. In one embodiment, the chamber component is a valve having an internal bellows.

7. 发明申请

US20150333213A1 DIAMOND-LIKE CARBON COATINGS FOR SUBSTRATE CARRIERS 审中-公开
标题翻译：类似钻石的碳纳米管涂层
公开(公告)号：US20150333213A1
公开(公告)日：2015-11-19
申请号：US14698395
申请日：2015-04-28
申请人： Applied Materials, Inc.
发明人： Shuran SHENG , Lin ZHANG , Su Ho CHO
IPC分类号： H01L31/18 , C23C16/505 , C23C16/26
CPC分类号： C23C16/26 , C23C16/4581 , C23C16/505 , H01L21/68757 , H01L21/68771 , H01L31/1876
摘要： A substrate carrier having a diamond-like carbon coating disposed thereon is provided. The diamond-like carbon coating may have the property of being substantially resistant to commonly used cleaning processes performed during the fabrication of photovoltaic cells, such as cleaning processes using an NF3 plasma. Additionally, a method of forming a diamond-like carbon coating on a substrate carrier is provided. The method includes positioning a substrate carrier in a processing chamber and forming a diamond-like carbon coating thereon. Forming the diamond-like carbon coating includes flowing a carbon-containing gas into a processing chamber and dissociating the carbon-containing gas. Furthermore, a method of quick removal of diamond-like carbon coatings from processing chamber walls, processing chamber components, substrate carriers, and other objects is provided.
摘要翻译：提供了其上设置有类金刚石碳涂层的基板载体。类金刚石碳涂层可具有基本上抵抗在光伏电池制造期间所执行的常用清洁工艺的性质，例如使用NF 3等离子体的清洁工艺。另外，提供了在基板载体上形成类金刚石碳涂层的方法。该方法包括将衬底载体定位在处理室中并在其上形成类金刚石碳涂层。形成类金刚石碳涂层包括使含碳气体流入处理室并解离含碳气体。此外，提供了从处理室壁，处理室部件，基板载体和其它物体中快速去除类金刚石碳涂层的方法。

8. 发明申请

US20140213016A1 IN SITU SILICON SURFACE PRE-CLEAN FOR HIGH PERFORMANCE PASSIVATION OF SILICON SOLAR CELLS 审中-公开
标题翻译：用于高性能钝化硅太阳能电池的现场硅表面预清洁
公开(公告)号：US20140213016A1
公开(公告)日：2014-07-31
申请号：US14160171
申请日：2014-01-21
申请人： Applied Materials, Inc.
发明人： Shuran SHENG , Lin ZHANG , Hari K. PONNEKANTI
IPC分类号： H01L31/18
CPC分类号： H01L31/056 , H01L31/02167 , H01L31/1868 , Y02E10/52 , Y02P70/521
摘要： Embodiments of the invention generally relate to methods for fabricating photovoltaic devices, and more particularly to methods for in-situ cleaning of a solar cell substrates. In one embodiment, a method of manufacturing a solar cell device is provided. The method comprises exposing a single or poly crystalline silicon substrate to a wet clean process to clean the surfaces of the crystalline substrate, loading the crystalline silicon substrate into a processing system having a vacuum environment, exposing at least one surface of the crystalline silicon substrate to an in-situ cleaning process in the vacuum environment of the processing system, and forming one or more passivation layers on at least one surface of the crystalline silicon substrate in the processing system.
摘要翻译：本发明的实施例一般涉及用于制造光伏器件的方法，更具体地涉及太阳能电池基板的原位清洁方法。在一个实施例中，提供了一种制造太阳能电池装置的方法。该方法包括将单晶或多晶硅衬底暴露于湿清洁工艺以清洁晶体衬底的表面，将晶体硅衬底装载到具有真空环境的处理系统中，将晶体硅衬底的至少一个表面暴露于在处理系统的真空环境中的原位清洁工艺，以及在处理系统中在晶体硅衬底的至少一个表面上形成一个或多个钝化层。

9. 发明申请

US20200098702A1 METHODS AND APPARATUS TO ELIMINATE WAFER BOW FOR CVD AND PATTERNING HVM SYSTEMS 审中-公开
公开(公告)号：US20200098702A1
公开(公告)日：2020-03-26
申请号：US16533145
申请日：2019-08-06
申请人： Applied Materials, Inc.
发明人： Shuran SHENG , Lin ZHANG , Joseph C. WERNER
IPC分类号： H01L23/00 , H01L27/11582 , H01L21/02 , C23C16/50 , C23C14/35 , C23C14/10 , C23C14/06 , C23C16/40 , C23C16/34 , C23C16/26
摘要： A method and apparatus for forming a backside coating on a substrate to counteract stresses from a previously deposited film is disclosed. In one embodiment, a method for flattening a bowed substrate includes providing a substrate having a film stack formed on a first major surface thereof, wherein the substrate comprises a bowed orientation, and forming a coating a second major surface of the substrate, wherein the coating is configured to counter stresses produced by the film stack and flattens the substrate from the bowed orientation.

10. 发明申请

US20190169743A1 ADVANCED COATING METHOD AND MATERIALS TO PREVENT HDP-CVD CHAMBER ARCING 审中-公开
公开(公告)号：US20190169743A1
公开(公告)日：2019-06-06
申请号：US16268194
申请日：2019-02-05
申请人： Applied Materials, Inc.
发明人： Lin ZHANG , Xuesong LU , Andrew V. LE , Jang Seok OH
IPC分类号： C23C16/455 , H01J37/32 , C23C16/507 , C23C16/44 , C23C16/34 , C23C16/505 , C23C16/40
摘要： Embodiments described herein relate to apparatus and coating methods to reduce chamber arcing, for example, in HDP-CVD, PECVD, PE-ALD and Etch chambers. The apparatus include a ring shaped gas distributor used for in-situ deposition of coating materials, and a process chamber including the same. The ring shaped gas distributor includes a ring shaped body having at least one gas entrance port disposed on a first side thereof and a plurality of gas distribution ports disposed on a first surface of the ring shaped body. The plurality of gas distribution ports are arranged in a plurality of evenly distributed rows. The plurality of gas distribution ports in a first row of the plurality of evenly distributed rows is adapted to direct gas at an exit angle different from an exit angle of the plurality of gas distribution ports in a second row of the plurality of evenly distributed rows.

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