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1. 发明申请

US20200333774A1 ADAPTIVE CHAMBER MATCHING IN ADVANCED SEMICONDUCTOR PROCESS CONTROL 审中-公开
公开(公告)号：US20200333774A1
公开(公告)日：2020-10-22
申请号：US16946784
申请日：2020-07-06
申请人： Applied Materials, Inc.
发明人： Samer BANNA
IPC分类号： G05B19/418 , H01L21/67
摘要： Systems and methods for controlling device performance variability during manufacturing of a device on wafers are disclosed. The system includes a process platform, on-board metrology (OBM) tools, and a first server that stores a machine-learning based process control model. The first server combines virtual metrology (VM) data and OBM data to predict a spatial distribution of one or more dimensions of interest on a wafer. The system further comprises an in-line metrology tool, such as SEM, to measure the one or more dimensions of interest on a subset of wafers sampled from each lot. A second server having a machine-learning engine receives from the first server the predicted spatial distribution of the one or more dimensions of interest based on VM and OBM, and also receives SEM metrology data, and updates the process control model periodically (e.g., to account for chamber-to-chamber variability) using machine learning techniques.

2. 发明申请

US20150181684A1 EXTREME EDGE AND SKEW CONTROL IN ICP PLASMA REACTOR 审中-公开
标题翻译： ICP等离子体反应器的极端边缘和轴流控制
公开(公告)号：US20150181684A1
公开(公告)日：2015-06-25
申请号：US14543316
申请日：2014-11-17
申请人： Applied Materials, Inc.
发明人： Samer BANNA , Vladimir KNYAZIK , Kyle TANTIWONG
IPC分类号： H05H1/24 , H01L21/67 , H01L21/3065
CPC分类号： H05H1/24 , H01J37/321 , H01J37/32174 , H01J37/32642 , H01J37/32697 , H01L21/6875
摘要： Embodiments of the present disclosure provide apparatus and methods for improving plasma uniformity around edge regions and/or reducing non-symmetry in a plasma processing chamber. One embodiment of the present disclosure provides a plasma tuning assembly having one or more conductive bodies disposed around an edge region of a substrate support in a plasma processing chamber. The one or more conductive bodies are isolated from other chamber components and electrically floating in the processing chamber near the edge region without connecting to active electrical potentials. During operation, when a plasma is maintained in the plasma processing chamber, the presence of the one or more conductive bodies affects the plasma distribution near the one or more conductive bodies.
摘要翻译：本公开的实施例提供了用于改善边缘区域周围的等离子体均匀性和/或降低等离子体处理室中的非对称性的装置和方法。本公开的一个实施例提供了等离子体调谐组件，其具有设置在等离子体处理室中的衬底支撑件的边缘区域周围的一个或多个导电体。一个或多个导电体与其它腔室部件隔离，并且在边缘区域附近电处理室中浮动，而不会连接到有源电位。在操作期间，当在等离子体处理室中维持等离子体时，一个或多个导电体的存在影响一个或多个导电体附近的等离子体分布。

3. 发明申请

US20230129405A1 SEMICONDUCTOR DEVICE PACKAGING METHODS 有权
公开(公告)号：US20230129405A1
公开(公告)日：2023-04-27
申请号：US17511380
申请日：2021-10-26
申请人： Applied Materials, Inc.
发明人： Mukhles SOWWAN , Samer BANNA
IPC分类号： H01L23/538 , H01L25/10 , H01L23/498 , H01L21/48
摘要： The present disclosure relates to methods and apparatus for forming a thin-form-factor semiconductor device package. In certain embodiments, a glass or silicon substrate is patterned by laser ablation to form structures for subsequent formation of interconnections therethrough. The substrate is thereafter utilized as a frame for forming a semiconductor device package, which may have one or more embedded dies therein. In certain embodiments, an insulating layer is formed over the substrate by laminating a pre-structured insulating film thereon. The insulating film may be pre-structured by laser ablation to form structures therein, followed by selective curing of sidewalls of the formed structures.

4. 发明申请

US20220177821A1 ALL-IN-ONE BIOREACTOR FOR THERAPEUTIC CELLS MANUFACTURING 有权
公开(公告)号：US20220177821A1
公开(公告)日：2022-06-09
申请号：US17111359
申请日：2020-12-03
申请人： Applied Materials, Inc.
发明人： Samer BANNA , Mukhles SOWWAN , Gary E. DICKERSON
IPC分类号： C12M3/00 , C12M1/00
摘要： Methods and apparatus of bioreactors for therapeutic cells manufacturing are provided herein. In some embodiments, a bioreactor includes: an upper bioreactor reservoir configured to perform multiple cell therapy manufacturing process steps including genetic modification and expansion to a plurality of cells disposed therein, wherein the upper bioreactor reservoir includes a plurality of ports for delivering fluids into and out of the upper bioreactor reservoir; a lower bioreactor compartment configured to hold a suspension comprising a molecular species; and a membrane disposed between the lower bioreactor compartment and the upper bioreactor reservoir, wherein the membrane includes a plurality of micro-straws extending through the membrane and into the upper bioreactor reservoir to transfect the plurality of cells with the molecular species.

5. 发明申请

US20170110292A1 TUNABLE GAS DELIVERY ASSEMBLY WITH INTERNAL DIFFUSER AND ANGULAR INJECTION 审中-公开
公开(公告)号：US20170110292A1
公开(公告)日：2017-04-20
申请号：US15393828
申请日：2016-12-29
申请人： Applied Materials, Inc.
发明人： Vladimir KNYAZIK , Kyle TANTIWONG , Samer BANNA , Waheb BISHARA
IPC分类号： H01J37/32
CPC分类号： H01J37/32449 , F26B21/004 , H01J37/3244
摘要： An apparatus for providing processing gases to a process chamber with improved uniformity is disclosed. One embodiment provides a gas delivery assembly. The gas delivery assembly includes a hub, a nozzle, and one or more gas diffusers disposed in the nozzle. The nozzle has a cylindrical body with a side wall and a top surface. A plurality of injection passages are formed inside the nozzle to deliver processing gases into the process chamber via a plurality of outlets disposed in the side wall. The injection passages are configured to direct process gases out of each outlet disposed in the side wall in a direction which is not radially aligned with a centerline of the hub.

6. 发明申请

US20150364354A1 MULTI-ZONE HEATED ESC WITH INDEPENDENT EDGE ZONES 审中-公开
标题翻译：多区加热ESC与独立的边缘区域
公开(公告)号：US20150364354A1
公开(公告)日：2015-12-17
申请号：US14762796
申请日：2014-03-10
申请人： APPLIED MATERIALS, INC.
发明人： Kyle TANTIWONG , Vladimir KNYAZIK , Samer BANNA
IPC分类号： H01L21/683 , H01J37/32
CPC分类号： H01L21/6833 , H01J37/3244 , H01L21/67109 , H01L21/67248 , H01L21/6831 , Y10T279/23
摘要： An electrostatic chuck (ESC) with a cooling base for plasma processing chambers, such as a plasma etch chamber. In embodiments, a plasma processing chuck includes a plurality of independent edge zones. In embodiments, the edge zones are segments spanning different azimuth angles of the chuck to permit independent edge temperature tuning, which may be used to compensate for other chamber related non-uniformities or incoming wafer non-uniformities. In embodiments, the chuck includes a center zone having a first heat transfer fluid supply and control loop, and a plurality of edge zones, together covering the remainder of the chuck area, and each having separate heat transfer fluid supply and control loops. In embodiments, the base includes a diffuser, which may have hundreds of small holes over the chuck area to provide a uniform distribution of heat transfer fluid.
摘要翻译：具有用于等离子体处理室的冷却基座的静电卡盘（ESC），例如等离子体蚀刻室。在实施例中，等离子体处理卡盘包括多个独立的边缘区域。在实施例中，边缘区域是跨越卡盘的不同方位角的区段，以允许独立的边缘温度调节，其可以用于补偿其它室相关的不均匀性或进入的晶片非均匀性。在实施例中，卡盘包括具有第一传热流体供应和控制回路以及多个边缘区域的中心区域，其一起覆盖卡盘区域的其余部分，并且每个具有单独的传热流体供应和控制回路。在实施例中，底座包括扩散器，其可以在卡盘区域上方具有数百个小孔以提供传热流体的均匀分布。

7. 发明申请

US20140209596A1 ELECTROSTATIC CHUCK WITH CONCENTRIC COOLING BASE 有权
标题翻译：具有集中冷却基座的静电卡盘
公开(公告)号：US20140209596A1
公开(公告)日：2014-07-31
申请号：US14162510
申请日：2014-01-23
申请人： Applied Materials, Inc.
发明人： Dmitry LUBOMIRSKY , Kyle TANTIWONG , Samer BANNA
IPC分类号： H01L21/02
CPC分类号： H01L21/6831 , H01L21/67 , H01L21/67098
摘要： Embodiments of the present disclosure generally provide apparatus and method for cooling a substrate support in a uniform manner. One embodiment of the present disclosure provides a cooling assembly for a substrate support. The cooling assembly includes a cooling base having a first side for contacting the substrate support and providing cooling to the substrate support, a diffuser disposed on a second side of the cooling base, wherein the diffuser defines a plurality of cooling paths for delivering a cooling fluid towards the cooling base in a parallel manner, and an inlet/outlet plate disposed under the diffuser, wherein the inlet/outlet plate is provides an interface between the diffuser and an inlet and outlet of a cooling fluid.
摘要翻译：本公开的实施例通常提供用于以均匀方式冷却衬底支撑件的装置和方法。本公开的一个实施例提供了一种用于衬底支撑件的冷却组件。所述冷却组件包括冷却基座，所述冷却基座具有用于接触所述基板支撑件并且向所述基板支撑件提供冷却的第一侧，设置在所述冷却基座的第二侧上的扩散器，其中所述扩散器限定多个用于输送冷却流体的冷却路径以平行方式朝向冷却基座，以及设置在扩散器下方的入口/出口板，其中入口/出口板提供扩散器与冷却流体的入口和出口之间的界面。

8. 发明申请

US20220125656A1 METHODS AND APPARATUS FOR CELL AND GENE THERAPY AT POINT-OF-CARE LOCATION 有权
公开(公告)号：US20220125656A1
公开(公告)日：2022-04-28
申请号：US17496242
申请日：2021-10-07
申请人： APPLIED MATERIALS, INC.
发明人： Samer BANNA , Mukhles SOWWAN , Mendy ERAD
IPC分类号： A61G10/00 , G16H10/40 , G16H40/63 , A61G10/02 , B01L1/04
摘要： Methods and apparatus for producing a treatment dose of engineered cells for individual patients at the point-of-care location. In some embodiments, a patient treatment system includes a mobile cell and gene processing station that provides individualized patient treatments at point-of-care locations. The cell and gene processing station may include a patient chamber configured to isolate a patient from an external environment, a first environment controller to adjust environmental parameters of the patient chamber, a processing chamber configured to isolate processing of patient cells from the external environment, a second environment controller to adjust environmental parameters of the processing chamber, a first apparatus configured to receive at least one blood sample from the patient, a second apparatus configured to process the blood sample, and a third apparatus configured to perform cell and gene engineering on the blood sample to create a treatment dose for the patient.

9. 发明申请

US20210090852A1 USE OF ELECTRON BEAM SCANNING ELECTRON MICROSCOPY FOR CHARACTERIZATION OF A SIDEWALL OCCLUDED FROM LINE-OF-SIGHT OF THE ELECTRON BEAM 有权
公开(公告)号：US20210090852A1
公开(公告)日：2021-03-25
申请号：US16580325
申请日：2019-09-24
申请人： Applied Materials, Inc.
发明人： Ofer YULI , Samer BANNA
IPC分类号： H01J37/22 , H01J37/28
摘要： A semiconductor device is scanned by an electron beam of a scanning electron microscope (SEM). The area includes a three-dimensional (3D) feature having a top opening and a sidewall. The 3D feature is imaged while varying an energy value of the electron beam. The electron beam impinges at a first point within a selected area of the semiconductor device and interacts with the sidewall, wherein the first point is at a distance away from an edge of the top opening. Based on change in a signal representing secondary electron yield at the edge as the energy value of the electron beam is varied during the SEM imaging, it is determined whether the sidewall is occluded from a line-of-sight of the electron beam. A slope of the sidewall may be determined by comparing measured signals with simulated waveforms corresponding to various slopes.

10. 发明申请

US20210018449A1 PARTICLE DETECTION FOR SUBSTRATE PROCESSING 有权
公开(公告)号：US20210018449A1
公开(公告)日：2021-01-21
申请号：US17062231
申请日：2020-10-02
申请人： Applied Materials, Inc.
发明人： Todd EGAN , Mehdi VAEZ-IRAVANI , Samer BANNA , Kyle TANTIWONG , Gregory KIRK , Abraham RAVID , Yaoming SHEN
IPC分类号： G01N21/95 , H01L21/67 , G01N15/02 , G01N15/14 , G01N21/94
摘要： A system for processing a substrate is provided. The system includes a process chamber including one or more sidewalls enclosing a processing region; and a substrate support. The system further includes a passageway connected to the process chamber; and a first particle detector disposed at a first location along the passageway. The first particle detector includes an energy source configured to emit a first beam; one or more optical devices configured to direct the first beam along one or more paths, where the one or more paths extend through at least a portion of the passageway. The first particle detector further includes a first energy detector disposed at a location other than on the one or more paths. The system further includes a controller configured to communicate with the first particle detector, wherein the controller is configured to identify a fault based on signals received from the first particle detector.

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