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    • 2. 发明申请
    • SUBSTRATE SUPPORT WITH RADIO FREQUENCY (RF) RETURN PATH
    • 基站支持无线射频(RF)返回路径
    • US20130319854A1
    • 2013-12-05
    • US13899808
    • 2013-05-22
    • APPLIED MATERIALS, INC.
    • VIJAY D. PARKHERYAN HANSON
    • C23C14/50
    • C23C14/50H01J37/32577H01J37/32697H01J37/32715H01J37/32724H01J37/34
    • Embodiments of substrate supports having a radio frequency (RF) return path are provided herein. In some embodiments, a substrate support may include a dielectric support body having a support surface to support a substrate thereon and an opposing second surface; a chucking electrode disposed within the support body proximate the support surface; and an RF return path electrode disposed on the second surface of the dielectric support body. In some embodiments, a substrate processing system may include a process chamber having an inner volume; a shield to separate the inner volume into a processing volume and a non-processing volume and extending toward a ceiling of the process chamber; and a substrate support disposed below the shield, wherein the substrate support is as described above.
    • 本文提供了具有射频(RF)返回路径的基板支架的实施例。 在一些实施例中,衬底支撑件可以包括电介质支撑体,其具有支撑表面以支撑其上的衬底和相对的第二表面; 夹持电极,设置在所述支撑体内靠近所述支撑表面; 以及设置在电介质支撑体的第二表面上的RF返回路径电极。 在一些实施例中,衬底处理系统可以包括具有内部容积的处理室; 将内部体积分离成处理体积和非处理体积并延伸到处理室的天花板的屏蔽件; 以及设置在所述屏蔽件下方的衬底支撑件,其中所述衬底支撑件如上所述。
    • 5. 发明申请
    • ELECTROSTATIC CHUCK WITH TEMPERATURE CONTROL
    • 具有温度控制的静电卡盘
    • US20130088809A1
    • 2013-04-11
    • US13630196
    • 2012-09-28
    • APPLIED MATERIALS, INC.
    • VIJAY D. PARKHESTEVEN V. SANSONICHENG-HSIUNG MATTHEW TSAI
    • F28F3/00H02N13/00
    • F28F3/00B23Q3/15B23Q3/1543H01L21/67109H01L21/683H01L21/6831H02N13/00
    • Embodiments of an apparatus for controlling a temperature of an electrostatic chuck in a process chamber are provided herein. In some embodiments, the apparatus includes an electrostatic chuck disposed in a process chamber, the electrostatic chuck including a ceramic plate having a substrate supporting surface, and a cooling assembly including a plurality of cooling plates disposed below the electrostatic chuck to adjust the cooling capacity of the electrostatic chuck. In some embodiments, the plurality of cooling plates includes an inner cooling plate configured to control a temperature of a center portion of the electrostatic chuck, and an outer cooling plate configured to control a temperature of an outer portion of the electrostatic chuck. In some embodiments, the plurality of cooling plates includes an upper cooling plate that contacts a bottom surface of the electrostatic chuck, and a lower cooling plate which contacts a bottom surface of the upper cooling plate.
    • 本文提供了用于控制处理室中的静电卡盘的温度的装置的实施例。 在一些实施例中,该设备包括设置在处理室中的静电吸盘,静电吸盘包括具有基板支撑表面的陶瓷板,以及包括设置在静电卡盘下方的多个冷却板的冷却组件,以调节冷却能力 静电吸盘。 在一些实施例中,多个冷却板包括构造成控制静电卡盘的中心部分的温度的内部冷却板和被配置为控制静电卡盘的外部部分的温度的外部冷却板。 在一些实施例中,多个冷却板包括接触静电卡盘的底表面的上部冷却板和接触上部冷却板底面的下部冷却板。