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1. 发明授权

US11444206B2 Manufacturing method of a semiconductor structure 有权
公开(公告)号：US11444206B2
公开(公告)日：2022-09-13
申请号：US17395454
申请日：2021-08-05
申请人： Au Optronics Corporation
发明人： Po-Liang Yeh , Chen-Chung Wu , De-Zhang Deng , Chia-Ming Chang
IPC分类号： H01L21/02 , H01L29/786 , H01L29/66
摘要： A manufacturing method of a semiconductor structure including the following steps is provided: forming a first metal layer on a substrate; forming an insulating layer on the first metal layer; forming an oxide semiconductor material layer on the insulating layer; performing an annealing treatment to the oxide semiconductor material layer; forming an etch stopping material layer on the oxide semiconductor material layer; forming a photoresist material layer on the etch stopping material layer and defining thereof with a half tone photomask to form a photoresist pattern; using the photoresist pattern as a mask, patterning the etch stopping material layer to form an etch stopping pattern, and patterning the oxide semiconductor material layer to form an oxide semiconductor layer; removing the photoresist pattern; using the etch stopping pattern as the mask, patterning the insulating layer; forming a second metal layer on the etch stopping pattern; and patterning the oxide semiconductor layer.

2. 发明授权

US11367795B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US11367795B2
公开(公告)日：2022-06-21
申请号：US17088525
申请日：2020-11-03
申请人： Au Optronics Corporation
发明人： Ting-Fong Chien , Po-Liang Yeh , Chen-Chung Wu , Chia-Ming Chang , Chun-An Chang
IPC分类号： H01L29/786 , H01L29/417 , H01L29/423 , H01L29/49 , H01L23/532 , H01L21/28 , H01L29/06 , H01L29/66
摘要： A semiconductor device including a first substrate and a thin film transistor disposed on the first substrate is provided. The thin film transistor includes a gate, a semiconductor pattern, a first insulating layer, a source and a drain. The first insulating layer is disposed between the gate and the semiconductor pattern. The source and the drain are separated from each other and disposed corresponding to the semiconductor pattern. At least one of the source and the drain has a first copper patterned layer and a first copper oxynitride patterned layer. The first copper oxynitride patterned layer covers the first copper patterned layer. The first copper patterned layer is disposed between the first copper oxynitride patterned layer and the first substrate. Moreover, a manufacturing method of the semiconductor device is also provided.

3. 发明申请

US20210367079A1 MANUFACTURING METHOD OF A SEMICONDUCTOR STRUCTURE 有权
公开(公告)号：US20210367079A1
公开(公告)日：2021-11-25
申请号：US17395454
申请日：2021-08-05
申请人： Au Optronics Corporation
发明人： Po-Liang Yeh , Chen-Chung Wu , De-Zhang Deng , Chia-Ming Chang
IPC分类号： H01L29/786 , H01L21/02 , H01L29/66
摘要： A manufacturing method of a semiconductor structure including the following steps is provided: forming a first metal layer on a substrate; forming an insulating layer on the first metal layer; forming an oxide semiconductor material layer on the insulating layer; performing an annealing treatment to the oxide semiconductor material layer; forming an etch stopping material layer on the oxide semiconductor material layer; forming a photoresist material layer on the etch stopping material layer and defining thereof with a half tone photomask to form a photoresist pattern; using the photoresist pattern as a mask, patterning the etch stopping material layer to form an etch stopping pattern, and patterning the oxide semiconductor material layer to form an oxide semiconductor layer; removing the photoresist pattern; using the etch stopping pattern as the mask, patterning the insulating layer; forming a second metal layer on the etch stopping pattern; and patterning the oxide semiconductor layer.

4. 发明申请

US20130328069A1 ACTIVE DEVICE, DRIVING CIRCUIT STRUCTURE, AND DISPLAY PANEL 有权
标题翻译：主动设备，驱动电路结构和显示面板
公开(公告)号：US20130328069A1
公开(公告)日：2013-12-12
申请号：US13645461
申请日：2012-10-04
申请人： AU OPTRONICS CORPORATION
发明人： Chao-Yu Yang , Hao-Lin Chiu , Shu-Wei Tsao , Shih-Che Huang , Po-Liang Yeh , Chun-Nan Lin , Shine-Kai Tseng
IPC分类号： H01L29/786 , H01L27/15
CPC分类号： H01L29/78696 , H01L27/1255 , H01L29/41733 , H01L29/42384 , H01L29/7869
摘要： An active device, a driving circuit structure, and a display panel are provided. The active device includes a gate, a gate insulation layer covering the gate, a semiconductor layer disposed above the gate, an etching stop layer disposed on the gate insulation layer and the semiconductor layer, a source, and a drain. The gate forms a meandering pattern on a substrate. The semiconductor layer has an area substantially defining a device region where the active device is. The etching stop layer has a first contact opening and a second contact opening. The first contact opening and the second contact opening separated from each other and both exposing the semiconductor layer. The source and the drain separated from each other are disposed on the etching stop layer and in contact with the semiconductor layer through the first contact opening and the second contact opening, respectively.
摘要翻译：提供有源器件，驱动电路结构和显示面板。有源器件包括栅极，覆盖栅极的栅极绝缘层，设置在栅极上方的半导体层，设置在栅极绝缘层和半导体层上的蚀刻停止层，源极和漏极。栅极在基板上形成曲折的图案。半导体层具有基本上限定有源器件的器件区域的区域。蚀刻停止层具有第一接触开口和第二接触开口。第一接触开口和第二接触开口彼此分离并且暴露半导体层。彼此分离的源极和漏极分别设置在蚀刻停止层上并且分别通过第一接触开口和第二接触开口与半导体层接触。

5. 发明申请

US20190341494A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20190341494A1
公开(公告)日：2019-11-07
申请号：US16177464
申请日：2018-11-01
申请人： Au Optronics Corporation
发明人： Ting-Fong Chien , Po-Liang Yeh , Chen-Chung Wu , Chia-Ming Chang , Chun-An Chang
IPC分类号： H01L29/786 , H01L29/66 , H01L29/417 , H01L29/423 , H01L29/49 , H01L21/28 , H01L29/06
摘要： A semiconductor device including a first substrate and a thin film transistor disposed on the first substrate is provided. The thin film transistor includes a gate, a semiconductor pattern, a first insulating layer, a source and a drain. The first insulating layer is disposed between the gate and the semiconductor pattern. The source and the drain are separated from each other and disposed corresponding to the semiconductor pattern. At least one of the source and the drain has a first copper patterned layer and a first copper oxynitride patterned layer. The first copper oxynitride patterned layer covers the first copper patterned layer. The first copper patterned layer is disposed between the first copper oxynitride patterned layer and the first substrate. Moreover, a manufacturing method of the semiconductor device is also provided.

6. 发明授权

US09905701B2 Active device structure with oxide channel layer having degree of crystallinity and method thereof 有权
公开(公告)号：US09905701B2
公开(公告)日：2018-02-27
申请号：US15072301
申请日：2016-03-16
申请人： Au Optronics Corporation
发明人： Po-Liang Yeh , Chen-Chung Wu , Chun-An Chang , Jiang-Jin You , Chia-Ming Chang
IPC分类号： H01L29/786 , H01L27/12 , H01L29/04 , H01L29/24 , H01L29/66 , H01L21/477 , H01L21/02
CPC分类号： H01L29/7869 , H01L21/02164 , H01L21/02274 , H01L21/477 , H01L27/1225 , H01L27/1229 , H01L29/04 , H01L29/24 , H01L29/66969 , H01L29/78606 , H01L29/78648 , H01L29/78696
摘要： An active device structure and a method of fabricating an active device are provided. The active device structure includes a gate, an oxide channel layer, a source, a drain and a high power deposited insulation layer. The gate and the oxide channel layer are overlapped in a top and bottom manner. The oxide channel layer includes a top layer and a bottom layer having a crystalline structure different from a crystalline structure of the top layer. The source and the drain both contact the oxide channel layer, wherein a gap separating the source and the drain defines a channel area. The high power deposited insulation layer contacts the top layer of the oxide channel layer. The top layer of the oxide channel layer provides the effect of blocking light, which solves the problem of threshold voltage shift due to the light irradiation on the oxide channel layer.

7. 发明授权

US11171244B2 Semiconductor structure and manufacturing method thereof 有权
公开(公告)号：US11171244B2
公开(公告)日：2021-11-09
申请号：US16503499
申请日：2019-07-04
申请人： Au Optronics Corporation
发明人： Po-Liang Yeh , Chen-Chung Wu , De-Zhang Deng , Chia-Ming Chang
IPC分类号： H01L29/786 , H01L21/02 , H01L29/66
摘要： A semiconductor structure disposed on a substrate including a first metal layer disposed on the substrate, a gate insulating layer disposed on the substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopping pattern disposed on the oxide semiconductor layer, and a second metal layer disposed on the etch stopping layer. The first metal layer includes a gate line. The gate insulating layer covers the gate line. Patterning of the oxide semiconductor layer defines an oxide semiconductor pattern. The second metal layer includes a source electrode and a drain electrode electrically connected to the oxide semiconductor pattern. The etch stopping layer is located between the second metal layer and the oxide semiconductor layer. The second metal layer includes a signal line disposed on the etch stopping layer and is electrically connected to the oxide semiconductor pattern. A manufacturing method of the semiconductor structure is also provided.

8. 发明申请

US20210050454A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
公开(公告)号：US20210050454A1
公开(公告)日：2021-02-18
申请号：US17088525
申请日：2020-11-03
申请人： Au Optronics Corporation
发明人： Ting-Fong Chien , Po-Liang Yeh , Chen-Chung Wu , Chia-Ming Chang , Chun-An Chang
IPC分类号： H01L29/786 , H01L21/28 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/66
摘要： A semiconductor device including a first substrate and a thin film transistor disposed on the first substrate is provided. The thin film transistor includes a gate, a semiconductor pattern, a first insulating layer, a source and a drain. The first insulating layer is disposed between the gate and the semiconductor pattern. The source and the drain are separated from each other and disposed corresponding to the semiconductor pattern. At least one of the source and the drain has a first copper patterned layer and a first copper oxynitride patterned layer. The first copper oxynitride patterned layer covers the first copper patterned layer. The first copper patterned layer is disposed between the first copper oxynitride patterned layer and the first substrate. Moreover, a manufacturing method of the semiconductor device is also provided.

9. 发明申请

US20200303553A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20200303553A1
公开(公告)日：2020-09-24
申请号：US16503499
申请日：2019-07-04
申请人： Au Optronics Corporation
发明人： Po-Liang Yeh , Chen-Chung Wu , De-Zhang Deng , Chia-Ming Chang
IPC分类号： H01L29/786 , H01L21/02 , H01L29/66
摘要： A semiconductor structure disposed on a substrate including a first metal layer disposed on the substrate, a gate insulating layer disposed on the substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopping pattern disposed on the oxide semiconductor layer, and a second metal layer disposed on the etch stopping layer. The first metal layer includes a gate line. The gate insulating layer covers the gate line. Patterning of the oxide semiconductor layer defines an oxide semiconductor pattern. The second metal layer includes a source electrode and a drain electrode electrically connected to the oxide semiconductor pattern. The etch stopping layer is located between the second metal layer and the oxide semiconductor layer. The second metal layer includes a signal line disposed on the etch stopping layer and is electrically connected to the oxide semiconductor pattern. A manufacturing method of the semiconductor structure is also provided.

10. 发明申请

US20160300951A1 ACTIVE DEVICE STRUCTURE AND FABRICATING METHOD THEREOF 有权
标题翻译：主动装置结构及其制作方法
公开(公告)号：US20160300951A1
公开(公告)日：2016-10-13
申请号：US15072301
申请日：2016-03-16
申请人： Au Optronics Corporation
发明人： Po-Liang Yeh , Chen-Chung Wu , Chun-An Chang , Jiang-Jin You , Chia-Ming Chang
IPC分类号： H01L29/786 , H01L21/02 , H01L29/66 , H01L21/477 , H01L29/04 , H01L29/24
CPC分类号： H01L29/7869 , H01L21/02164 , H01L21/02274 , H01L21/477 , H01L27/1225 , H01L27/1229 , H01L29/04 , H01L29/24 , H01L29/66969 , H01L29/78606 , H01L29/78648 , H01L29/78696
摘要： An active device structure and a method of fabricating an active device are provided. The active device structure includes a gate, an oxide channel layer, a source, a drain and a high power deposited insulation layer. The gate and the oxide channel layer are overlapped in a top and bottom manner. The oxide channel layer includes a top layer and a bottom layer having a crystalline structure different from a crystalline structure of the top layer. The source and the drain both contact the oxide channel layer, wherein a gap separating the source and the drain defines a channel area. The high power deposited insulation layer contacts the top layer of the oxide channel layer. The top layer of the oxide channel layer provides the effect of blocking light, which solves the problem of threshold voltage shift due to the light irradiation on the oxide channel layer.
摘要翻译：提供了有源器件结构和制造有源器件的方法。有源器件结构包括栅极，氧化物沟道层，源极，漏极和大功率淀积绝缘层。栅极和氧化物沟道层以顶部和底部的方式重叠。氧化物沟道层包括具有不同于顶层的晶体结构的晶体结构的顶层和底层。源极和漏极都接触氧化物沟道层，其中分离源极和漏极的间隙限定沟道区域。高功率淀积绝缘层与氧化物沟道层的顶层接触。氧化物沟道层的顶层提供阻挡光的效果，其解决了由于氧化物通道层上的光照射引起的阈值电压漂移的问题。

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