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1. 发明授权

US09791758B2 Display substrate and manufacturing method thereof 有权
公开(公告)号：US09791758B2
公开(公告)日：2017-10-17
申请号：US14908673
申请日：2015-07-20
申请人： BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Tiansheng Li
IPC分类号： H01L29/417 , G02F1/1368 , H01L21/77 , H01L27/12 , H01L29/786
CPC分类号： G02F1/1368 , G02F2201/123 , H01L21/77 , H01L27/12 , H01L27/1244 , H01L29/41733 , H01L29/78696
摘要： The present invention provides a display substrate and a manufacturing method thereof. The display substrate of the present invention comprises a first structure and a second structure; wherein, the second structure is provided with a lap portion disposed on the first structure and a main body portion connected with the lap portion and outside the first structure; the first structure has a thinned region connected to an edge thereof, and a thickness of the first structure in the thinned region is smaller than that outside the thinned region; and at least part of the lap portion is located on the thinned region, and at least part of the main body portion outside the thinned region is in direct connection with the part of the lap portion on the thinned region.

2. 发明授权

US09735181B2 Array substrate and method of manufacturing the same, display panel, and display device 有权
公开(公告)号：US09735181B2
公开(公告)日：2017-08-15
申请号：US15238206
申请日：2016-08-16
申请人： BOE Technology Group Co., Ltd. , Beijing BOE Optoelectronics Technology Co., Ltd.
发明人： Tiansheng Li , Jing Li , Wenyu Zhang
IPC分类号： H01L27/12 , H01L23/535 , H01L21/768 , H01L27/32 , G02F1/1368 , G02F1/1335 , G02F1/1343
CPC分类号： H01L27/124 , G02F1/133514 , G02F1/134309 , G02F1/136227 , G02F1/1368 , G02F2201/123 , H01L21/76895 , H01L23/535 , H01L27/1222 , H01L27/1244 , H01L27/1259 , H01L27/3262 , H01L29/41733
摘要： An array substrate and a method of manufacturing the same, a display panel and a display device are disclosed. The array substrate includes: a base substrate, and a first conductive layer, a first insulation layer, a semiconductor layer, a second conductive layer, a second insulation layer, and a third conductive layer that are sequentially formed on the base substrate. The first conductive layer includes a gate electrode pattern, the semiconductor layer includes an active area pattern, and the second conductive layer includes a source-drain electrode pattern; the second insulation layer is provided with a connection via hole between the third conductive layer and the second conductive layer; and the semiconductor layer further includes a spacing pad pattern in a region where the connection via hole is provided.

3. 发明申请

US20170194355A1 Array Substrate and Method Of Manufacturing the Same, Display Panel, and Display Device 有权
公开(公告)号：US20170194355A1
公开(公告)日：2017-07-06
申请号：US15238206
申请日：2016-08-16
申请人： BOE Technology Group Co., Ltd. , Beijing BOE Optoelectronics Technology Co., Ltd.
发明人： Tiansheng Li , Jing Li , Wenyu Zhang
IPC分类号： H01L27/12 , H01L21/768 , H01L27/32 , H01L23/535
CPC分类号： H01L27/124 , G02F1/133514 , G02F1/134309 , G02F1/136227 , G02F1/1368 , G02F2201/123 , H01L21/76895 , H01L23/535 , H01L27/1222 , H01L27/1244 , H01L27/1259 , H01L27/3262 , H01L29/41733
摘要： An array substrate and a method of manufacturing the same, a display panel and a display device are disclosed. The array substrate includes: a base substrate, and a first conductive layer, a first insulation layer, a semiconductor layer, a second conductive layer, a second insulation layer, and a third conductive layer that are sequentially formed on the base substrate. The first conductive layer includes a gate electrode pattern, the semiconductor layer includes an active area pattern, and the second conductive layer includes a source-drain electrode pattern; the second insulation layer is provided with a connection via hole between the third conductive layer and the second conductive layer; and the semiconductor layer further includes a spacing pad pattern in a region where the connection via hole is provided.

4. 发明授权

US08987074B2 Oxide semiconductor thin film transistor, manufacturing method, and display device thereof 有权
标题翻译：氧化物半导体薄膜晶体管，制造方法及其显示装置
公开(公告)号：US08987074B2
公开(公告)日：2015-03-24
申请号：US13983868
申请日：2013-02-27
申请人： Beijing BOE Optoelectronics Technology Co., Ltd.
发明人： Zhenyu Xie , Shaoying Xu , Changjiang Yan , Tiansheng Li
IPC分类号： H01L21/84 , H01L27/14
CPC分类号： H01L29/7869 , H01L23/564 , H01L29/24 , H01L29/66969 , H01L29/78606 , H01L29/78693 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： An oxide semiconductor thin film transistor, a manufacturing method and a display device thereof are disclosed. An oxide semiconductor thin film transistor comprises a gate insulating layer (22), an oxide semiconductor layer (24) and a blocking layer (25), wherein a first transition layer (23) is formed between the gate insulating layer (22) and the oxide semiconductor layer (24), the oxygen content of the first transition layer (23) is higher than the oxygen content of the oxide semiconductor layer (24). The oxide semiconductor thin film transistor enhances the interface characteristic and the lattice matching between the oxide semiconductor layer (24) and the blocking layer (25) to improve the stability of the thin film transistor better.
摘要翻译：公开了一种氧化物半导体薄膜晶体管，其制造方法和显示装置。一种氧化物半导体薄膜晶体管，包括栅极绝缘层（22），氧化物半导体层（24）和阻挡层（25），其中第一过渡层（23）形成在栅极绝缘层（22）和氧化物半导体层（24）中，第一过渡层（23）的氧含量高于氧化物半导体层（24）的氧含量。氧化物半导体薄膜晶体管增强了氧化物半导体层（24）和阻挡层（25）之间的界面特性和晶格匹配，以更好地提高薄膜晶体管的稳定性。

5. 发明申请

US20150014751A1 SENSOR AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：传感器及其制造方法
公开(公告)号：US20150014751A1
公开(公告)日：2015-01-15
申请号：US14125830
申请日：2012-11-26
申请人： BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Tiansheng Li , Shaoying Xu , Zhenyu Xie
IPC分类号： H01L27/146
CPC分类号： H01L27/14612 , H01L27/14603 , H01L27/14632 , H01L27/1464 , H01L27/14658 , H01L27/14687 , H01L27/14689 , H01L27/14692
摘要： A sensor and its fabrication method are provided. The sensor comprises: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a Thin Film Transistor (TFT) device and a photodiode sensing device, wherein the photodiode sensor device comprises: a bias line disposed on the base substrate; a transparent electrode disposed on the bias line and being electrically contacted with the bias line; a photodiode disposed on the transparent electrode; and a receiving electrode disposed on the photodiode; the TFT device is located above the photodiode. When the sensor is functioning, light is directly transmitted onto the photodiode sensor device through the base substrate. In comparison with conventional technologies, the light loss is largely reduced and the light absorption usage ratio is improved.
摘要翻译：提供传感器及其制造方法。该传感器包括：基底基板，一组栅极线和一组布置为彼此交叉的数据线;以及多个感测元件，其排列成阵列并由栅极线组和数据线组限定，每个感测元件包括薄膜晶体管（TFT）器件和光电二极管感测器件，其中所述光电二极管传感器器件包括：设置在所述基底衬底上的偏置线; 透明电极，设置在偏置线上并与偏置线电接触; 设置在所述透明电极上的光电二极管; 和设置在光电二极管上的接收电极; TFT器件位于光电二极管的上方。当传感器工作时，光通过基底直接传输到光电二极管传感器装置上。与常规技术相比，光损失大大降低，光吸收率比提高。

6. 发明授权

US10788907B2 Touch display substrate, fabrication method and touch display device 有权
公开(公告)号：US10788907B2
公开(公告)日：2020-09-29
申请号：US15757935
申请日：2015-06-26
申请人： BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Tiansheng Li , Zhenyu Xie
IPC分类号： G06F3/041 , G06F3/044
摘要： The technical solution provides a touch display substrate, a fabrication method thereof, and a touch display device. The touch display substrate includes a conductive bridge (9) and a touch-control signal lead (7) formed over a base substrate (1). The touch-control signal lead (7) is in contact with a first surface portion of the conductive bridge (9). A passivation layer (2) is formed over the touch-control signal lead (7) and the conductive bridge (9). The passivation layer (2) includes a via-hole (3) to expose a second surface portion of the conductive bridge (9). A touch electrode (8) is formed over the passivation layer (2) and being connected to the conductive bridge (9). Through the via-hole (3), the touch electrode (8) is connected to the conductive bridge (9) and further connected to the touch-control signal lead (7).

7. 发明授权

US10204936B2 Array substrate and method for manufacturing the same, display device 有权
公开(公告)号：US10204936B2
公开(公告)日：2019-02-12
申请号：US14405008
申请日：2013-11-20
申请人： BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Tiansheng Li , Jian Guo , Zhenyu Xie
IPC分类号： H01L27/12 , H01L27/15
摘要： An array substrate includes a display region and a Gate driver On Array (GOA) region. In the GOA region, a gate metal electrode, a gate insulating layer, an active layer, a transition layer, and a source-drain metal electrode are formed in sequence from bottom to top, and a via hole is provided penetrating the transition layer, the active layer and the gate insulating layer, the source-drain metal electrode is electrically connected to the gate metal electrode through the via hole; and at an edge of the via hole, there is formed an angle opening upward at edges of the transition layer and the active layer. There are further disclosed a manufacturing method of the array substrate and a display device provided with the array substrate.

8. 发明授权

US09806109B2 Half tone mask plate and method for manufacturing array substrate using the same 有权
公开(公告)号：US09806109B2
公开(公告)日：2017-10-31
申请号：US14490814
申请日：2014-09-19
申请人： BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Tiansheng Li , Zhenyu Xie
IPC分类号： H01L27/14 , H01L27/12 , H01L21/027 , H01L21/3213 , G03F1/00
CPC分类号： H01L27/1288 , G03F1/00 , H01L21/0274 , H01L21/32139
摘要： The present disclosure provides a half tone mask plate used to manufacture an active layer pattern as well as a source electrode pattern, a drain electrode pattern and a data line pattern located on the active layer pattern included in the array substrate. A surface of the array substrate includes a first region corresponding to the source electrode pattern, the drain electrode pattern and the data line pattern, a second region corresponding to a region of the active layer pattern located between the source electrode pattern and the drain electrode pattern, as well as a third region in addition to the first region and the second region; the half tone mask plate includes a semi-transparent region corresponding to the second region and a partial region of the third region.

9. 发明授权

US09530807B2 Thin film transistor array substrate, manufacturing method thereof, and display device 有权
标题翻译：薄膜晶体管阵列基板及其制造方法以及显示装置
公开(公告)号：US09530807B2
公开(公告)日：2016-12-27
申请号：US13993666
申请日：2012-12-10
申请人： Beijing BOE Optoelectronics Technology Co., Ltd.
发明人： Tiansheng Li , Wenyu Zhang , Zhenyu Xie
IPC分类号： H01L27/12 , H01L29/786 , H01L33/36 , G02F1/1343 , G02F1/1337
CPC分类号： H01L27/1288 , G02F1/133707 , G02F1/134363 , G02F2001/134318 , H01L27/124 , H01L29/786 , H01L33/36
摘要： A thin film transistor (TFT) array substrate, a manufacturing method thereof and a display device are provided. The manufacturing method comprises: forming a first passivation layer (8) on a substrate (1), and forming a board wiring PAD-region via hole (11) in the first passivation layer (8) above the board wiring PAD region (11) through a first patterning process; forming a second passivation layer (16) on the substrate (1) formed with the board wiring PAD-region via hole (11), and forming a pixel-region via hole (15) in the first passivation layer (8) and the second passivation layer (16) above the display electrode (7) through a second patterning process in such a way that the pixel-region via hole (15) has a top-size smaller than its bottom-size; and applying a transparent conductive layer on the substrate (1) formed with the pixel-region via hole (15) to form a second display electrode.
摘要翻译：提供薄膜晶体管（TFT）阵列基板，其制造方法和显示装置。该制造方法包括：在基板（1）上形成第一钝化层（8），并且在板布线PAD区域（11）上方的第一钝化层（8）中形成板布线PAD区域通孔（11）通过第一图案化过程; 在形成有所述基板配线PAD区域通孔（11）的基板（1）上形成第二钝化层（16），并且在所述第一钝化层（8）中形成像素区域通孔（15）通过第二图案化工艺使显示电极（7）上方的钝化层（16）以像素区域通孔（15）的顶端尺寸小于其底部尺寸; 以及在形成有像素区域通孔（15）的衬底（1）上施加透明导电层以形成第二显示电极。

10. 发明授权

US09236518B2 Sensor and method for fabricating the same 有权
标题翻译：传感器及其制造方法
公开(公告)号：US09236518B2
公开(公告)日：2016-01-12
申请号：US14128833
申请日：2012-12-03
申请人： BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Changjiang Yan , Zhenyu Xie , Shaoying Xu , Tiansheng Li
IPC分类号： H01L29/04 , H01L31/105 , H01L27/146 , H01L27/12 , H01L29/66 , H01L29/786 , H01L31/0256
CPC分类号： H01L31/1055 , H01L27/1214 , H01L27/14603 , H01L27/14616 , H01L27/14632 , H01L27/14687 , H01L27/14689 , H01L27/14692 , H01L29/66765 , H01L29/78669 , H01L31/0256
摘要： A sensor and its fabrication method are provided, the sensor includes: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element including a TFT device and a photodiode sensing device, wherein a channel region of the TFT device is inverted and the source and drain electrodes are positioned between the active layer and the gate electrode. The sensor reduces the number of mask as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the defect-free rate.
摘要翻译：提供了一种传感器及其制造方法，该传感器包括：基底基板，一组栅极线和一组布置为彼此交叉的数据线;以及多个感测元件，其排列成阵列并由栅极线和数据线组，每个感测元件包括TFT器件和光电二极管感测器件，其中TFT器件的沟道区域被反转，并且源极和漏极电极位于有源层和栅电极之间。该传感器减少了掩模的数量和生产成本，简化了生产过程，从而显着提高了生产能力和无缺陷率。

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