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1. 发明授权

US11316484B2 Optically gated transistor selector for variable resistive memory device 有权
公开(公告)号：US11316484B2
公开(公告)日：2022-04-26
申请号：US16513024
申请日：2019-07-16
申请人： BOISE STATE UNIVERSITY
发明人： Kristy A. Campbell
IPC分类号： H01L31/043 , H03F3/08 , H01L31/103 , H01L31/032 , H01L31/0224 , H01L31/0216 , H01L27/24 , H01L31/147 , G11C13/00
摘要： An optically gated transistor (OGT) device that may be used as a selector device for one or more variable resistive memory devices. The OGT device isolates the one or more variable resistive memory devices when the OGT is not optically activated. The amount of current conducted by the OGT device is dependent on an intensity of light optically applied to the OGT device. The OGT device includes alternating layers of germanium selenide (GeSe) and GeSe plus an additional element deposited on a substrate. The OGT device includes only two electrodes connected to the alternating layers deposited on the substrate. The OGT device may generate an amplified electrical signal with respect to the magnitude of a received optical signal. The OGT device may be used to generate an optical signal having a different wavelength than the wavelength of a received optical signal.

2. 发明授权

US09583703B2 Tunable variable resistance memory device 有权
标题翻译：可调电阻存储器件
公开(公告)号：US09583703B2
公开(公告)日：2017-02-28
申请号：US14727618
申请日：2015-06-01
申请人： BOISE STATE UNIVERSITY
发明人： Kristy A. Campbell
IPC分类号： H01L45/00 , G11C13/00
CPC分类号： H01L45/141 , G11C13/0069 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/1266 , H01L45/143 , H01L45/144 , H01L45/16 , H01L45/1625
摘要： A variable resistance memory device may include a first electrode and a second electrode. The device may further include a chalcogenide glass layer between the first electrode and the second electrode. The chalcogenide glass layer may include a chalcogenide glass material co-deposited with a metal material. The device may also include a metal ion source structure between the chalcogenide glass layer and the second electrode. The device may include a buffer layer between the first electrode and the chalcogenide glass layer.
摘要翻译：可变电阻存储器件可以包括第一电极和第二电极。该装置还可以包括在第一电极和第二电极之间的硫族化物玻璃层。硫族化物玻璃层可以包括与金属材料共沉积的硫族化物玻璃材料。该装置还可以包括硫族化物玻璃层和第二电极之间的金属离子源结构。该装置可以包括在第一电极和硫族化物玻璃层之间的缓冲层。

3. 发明授权

US11450779B2 Optically gated transistor light detector 有权
公开(公告)号：US11450779B2
公开(公告)日：2022-09-20
申请号：US16868134
申请日：2020-05-06
申请人： BOISE STATE UNIVERSITY
发明人： Kristy A. Campbell
IPC分类号： H01L31/032 , H01L31/02 , H01L31/109
摘要： An apparatus, system, and method for detecting light having a specified or first wavelength. The apparatus includes a substrate that generates charge separation in the presence of light having the first wavelength. An active material is deposited onto the substrate. The active material is configured to conduct current in the presence of light having a second wavelength. Two electrodes are connected to the active material. Light having the second wavelength is constantly applied to the active material and the current is monitored via the electrodes. The active material will conduct zero or minimal current via the electrodes if the substrate does not generate charge separation. Detection the presence of light having the first wavelength may be detected upon the detection of current via the two electrodes. The first wavelength may be non-visible light and the second wavelength may be visible light.

4. 发明授权

US09118006B1 Carbon-chalcogenide variable resistance memory device 有权
标题翻译：碳硫族化物可变电阻记忆装置
公开(公告)号：US09118006B1
公开(公告)日：2015-08-25
申请号：US14457400
申请日：2014-08-12
申请人： Boise State University
发明人： Kristy A. Campbell
IPC分类号： H01L45/00
CPC分类号： H01L45/143 , H01L45/085 , H01L45/1233 , H01L45/149 , H01L45/1625
摘要： A variable resistance memory device that includes a first electrode, a second electrode, and a first chalcogenide material layer between the first and second electrodes, the chalcogenide layer including carbon incorporated into germanium selenide chalcogenide glass. The variable resistance memory device may include a second chalcogenide material layer between the first chalcogenide material layer and the second electrode. The variable resistance memory device may include a first metallic layer between the second chalcogenide material layer and the second electrode. The variable resistance memory device may include a third chalcogenide material layer between the first metallic layer and the second electrode. The variable resistance memory device may include a fourth chalcogenide material layer between the first chalcogenide material layer and the first electrode. The first chalcogenide layer may be formed by co-sputtering carbon with Ge40Se60.
摘要翻译：一种可变电阻存储器件，包括在第一和第二电极之间的第一电极，第二电极和第一硫族化物材料层，所述硫族化物层包括掺入硒化锗硫化物玻璃中的碳。可变电阻存储器件可以包括在第一硫族化物材料层和第二电极之间的第二硫族化物材料层。可变电阻存储器件可以包括在第二硫族化物材料层和第二电极之间的第一金属层。可变电阻存储器件可以包括在第一金属层和第二电极之间的第三硫族化物材料层。可变电阻存储器件可以包括在第一硫族化物材料层和第一电极之间的第四硫族化物材料层。第一种硫族化物层可以通过与Ge40Se60共溅射碳来形成。

5. 发明授权

US09583699B2 Tunable variable resistance memory device 有权
标题翻译：可调电阻存储器件
公开(公告)号：US09583699B2
公开(公告)日：2017-02-28
申请号：US14962378
申请日：2015-12-08
申请人： BOISE STATE UNIVERSITY
发明人： Kristy A. Campbell
IPC分类号： H01L45/00
CPC分类号： H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/143 , H01L45/144 , H01L45/1608 , H01L45/1625
摘要： A variable resistance memory device may include a first electrode and a second electrode. The device may further include a chalcogenide glass layer between the first electrode and the second electrode. The chalcogenide glass layer may include a chalcogenide glass material co-deposited with a metal material. The metal material may include tin. The device may also include a metal ion source structure between the chalcogenide glass layer and the second electrode. The device may include a buffer layer between the first electrode and the chalcogenide glass layer.
摘要翻译：可变电阻存储器件可以包括第一电极和第二电极。该装置还可以包括在第一电极和第二电极之间的硫族化物玻璃层。硫族化物玻璃层可以包括与金属材料共沉积的硫族化物玻璃材料。金属材料可以包括锡。该装置还可以包括硫族化物玻璃层和第二电极之间的金属离子源结构。该装置可以包括在第一电极和硫族化物玻璃层之间的缓冲层。

6. 发明申请

US20210351308A1 Optically Gated Transistor Light Detector 有权
公开(公告)号：US20210351308A1
公开(公告)日：2021-11-11
申请号：US16868134
申请日：2020-05-06
申请人： BOISE STATE UNIVERSITY
发明人： Kristy A. Campbell
IPC分类号： H01L31/032 , H01L31/02 , H01L31/109
摘要： An apparatus, system, and method for detecting light having a specified or first wavelength. The apparatus includes a substrate that generates charge separation in the presence of light having the first wavelength. An active material is deposited onto the substrate. The active material is configured to conduct current in the presence of light having a second wavelength. Two electrodes are connected to the active material. Light having the second wavelength is constantly applied to the active material and the current is monitored via the electrodes. The active material will conduct zero or minimal current via the electrodes if the substrate does not generate charge separation. Detection the presence of light having the first wavelength may be detected upon the detection of current via the two electrodes. The first wavelength may be non-visible light and the second wavelength may be visible light.

7. 发明授权

US10700226B2 Optically activated transistor, switch, and photodiode 有权
公开(公告)号：US10700226B2
公开(公告)日：2020-06-30
申请号：US15990067
申请日：2018-05-25
申请人： BOISE STATE UNIVERSITY
发明人： Kristy A. Campbell
IPC分类号： H01L31/043 , H01L31/032 , H01L31/0224 , C23C14/06 , C23C14/34 , H01L31/109
摘要： An optically activated device that includes an active material on a substrate with two electrodes electrically connected to the active material, the active material conducts current in the presence of light and does not conduct appreciable current in the absence of light. The optically activated device functions as a photodiode, a switch, and an optically gated transistor. The optically activated device conducts current in the presences of light. The active material may be layers of germanium selenide and germanium selenide and an element. Germanium selenide may be sputtered onto a substrate to create layers of material separated by layers of co-sputtered germanium selenide with the element. The active material may be deposited onto a flexible substrate.

8. 发明申请

US20130119336A1 Forced Ion Migration for Chalcogenide Phase Change Memory Device 有权
标题翻译：硫族化物相变存储器件的强制离子迁移
公开(公告)号：US20130119336A1
公开(公告)日：2013-05-16
申请号：US13657495
申请日：2012-10-22
申请人： BOISE STATE UNIVERSITY
发明人： Kristy A. Campbell
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/1625 , H01L45/1641 , H01L45/1683 , Y10S977/754
摘要： Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus “activating” the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.
摘要翻译：已经研究了包括有源存储器件的具有两层叠层的硫族化物材料的非易失性存储器件作为相变存储器的潜力。测试的器件包括GeTe / SnTe，Ge2Se3 / SnTe和Ge2Se3 / SnSe堆叠。所有器件表现出电阻切换行为。由于电场引起的Sn或Te向Ge-硫族化物层的移动，相对于SnTe或SnSe层的施加电压的极性对于存储器开关特性至关重要。本发明的一个实施方案是包含含硫族化物的层的堆叠的装置，其仅在反向极性电压电位施加到堆叠之后才显示相变开关，导致离子移动到相邻层中并且因此“激活”该装置以起作用当施加的电压电位恢复到正常极性时，作为相变随机存取存储器件或可重新配置的电子器件。本发明的另一实施例是能够呈现多于两个数据状态的装置。

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