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1. 发明授权

US08415737B2 Semiconductor device with a pillar region and method of forming the same 有权
标题翻译：具有柱区域的半导体器件及其形成方法
公开(公告)号：US08415737B2
公开(公告)日：2013-04-09
申请号：US11765252
申请日：2007-06-19
申请人： Berinder P. S. Brar , Wonill Ha
发明人： Berinder P. S. Brar , Wonill Ha
IPC分类号： H01L29/76
CPC分类号： H01L21/823487 , H01L29/66848 , H01L29/8122 , H01L29/872
摘要： A semiconductor device, a method of forming the same, and a power converter including the semiconductor device. In one embodiment, the semiconductor device includes a heavily doped substrate, a source/drain contact below the heavily doped substrate, and a channel layer above the heavily doped substrate. The semiconductor device also includes a heavily doped source/drain layer above the channel layer and another source/drain contact above the heavily doped source/drain layer. The semiconductor device further includes pillar regions through the another source/drain contact, the heavily doped source/drain layer, and portions of the channel layer to form a vertical cell therebetween. Non-conductive regions of the semiconductor device are located in the portions of the channel layer. The semiconductor device still further includes a gate above the non-conductive regions in the pillar regions. The semiconductor device may also include a Schottky diode including the channel layer and a Schottky contact.
摘要翻译：半导体器件，其形成方法以及包括半导体器件的功率转换器。在一个实施例中，半导体器件包括重掺杂衬底，重掺杂衬底下面的源极/漏极接触以及重掺杂衬底之上的沟道层。半导体器件还包括在沟道层上方的重掺杂源极/漏极层以及重掺杂源极/漏极层上方的另一个源极/漏极接触。该半导体器件还包括通过另一个源/漏接触，重掺杂源/漏层和沟道层的部分的柱区域，以在其间形成垂直单元。半导体器件的非导电区域位于沟道层的部分中。半导体器件还包括在柱状区域中的非导电区域之上的栅极。半导体器件还可以包括包括沟道层和肖特基接触的肖特基二极管。

2. 发明授权

US07504673B2 Semiconductor device including a lateral field-effect transistor and Schottky diode 有权
标题翻译：包括横向场效应晶体管和肖特基二极管的半导体器件
公开(公告)号：US07504673B2
公开(公告)日：2009-03-17
申请号：US11866259
申请日：2007-10-02
申请人： Mariam Gergi Sadaka , Berinder P. S. Brar , Wonill Ha , Chanh Ngoc Minh Nguyen
发明人： Mariam Gergi Sadaka , Berinder P. S. Brar , Wonill Ha , Chanh Ngoc Minh Nguyen
IPC分类号： H01L31/0328
CPC分类号： H01L29/7783 , H01L27/0605 , H01L27/0629 , H01L27/0727 , H01L29/66462 , H01L29/872
摘要： A semiconductor device including a lateral field-effect transistor and Schottky diode and method of forming the same. In one embodiment, the lateral field-effect transistor includes a buffer layer having a contact covering a substantial portion of a bottom surface thereof, a lateral channel above the buffer layer, another contact above the lateral channel, and an interconnect that connects the lateral channel to the buffer layer. The semiconductor device also includes a Schottky diode parallel-coupled to the lateral field-effect transistor including a cathode formed from another buffer layer interposed between the buffer layer and the lateral channel, a Schottky interconnect interposed between the another buffer layer and the another contact, and an anode formed on a surface of the Schottky interconnect operable to connect the anode to the another contact. The semiconductor device may also include an isolation layer interposed between the buffer layer and the lateral channel.
摘要翻译：包括横向场效应晶体管和肖特基二极管的半导体器件及其形成方法。在一个实施例中，横向场效应晶体管包括缓冲层，该缓冲层具有覆盖其底表面的大部分的接触，缓冲层上方的横向通道，横向通道上方的另一接触件以及将侧向通道到缓冲层。半导体器件还包括并联耦合到横向场效应晶体管的肖特基二极管，该晶体管包括由介于缓冲层和横向沟道之间的另一个缓冲层形成的阴极，插入另一个缓冲层和另一个触点之间的肖特基互连，以及形成在所述肖特基互连件的表面上的阳极，其可操作以将所述阳极连接到所述另一个触点。半导体器件还可以包括插入在缓冲层和横向沟道之间的隔离层。

3. 发明授权

US07675090B2 Semiconductor device having a contact on a buffer layer thereof and method of forming the same 有权
标题翻译：在其缓冲层上具有接触的半导体器件及其形成方法
公开(公告)号：US07675090B2
公开(公告)日：2010-03-09
申请号：US11732301
申请日：2007-04-03
申请人： Mariam Gergi Sadaka , Berinder P. S. Brar , Wonill Ha , Chanh Ngoc Minh Nguyen
发明人： Mariam Gergi Sadaka , Berinder P. S. Brar , Wonill Ha , Chanh Ngoc Minh Nguyen
IPC分类号： H01L31/0328
CPC分类号： H01L29/1029 , H01L21/6835 , H01L29/1083 , H01L29/4175 , H01L29/41766 , H01L29/66462 , H01L29/7783 , H01L29/7785 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381
摘要： A semiconductor device and method of forming the same. The semiconductor device includes an epitaxially grown and conductive buffer layer having a contact covering a substantial portion of a bottom surface thereof and a lateral channel above the buffer layer. The semiconductor device also includes another contact above the lateral channel and an interconnect that connects the lateral channel to the buffer layer, operable to provide a low resistance coupling between the contact and the lateral channel.
摘要翻译：一种半导体器件及其制造方法。半导体器件包括外延生长和导电缓冲层，其具有覆盖其底表面的大部分的接触和缓冲层上方的横向通道。半导体器件还包括在横向通道上方的另一接触件和将横向通道连接到缓冲层的互连件，可操作以在触头和横向通道之间提供低电阻耦合。

4. 发明申请

US20070298564A1 Vertical Field-Effect Transistor and Method of Forming the Same 有权
公开(公告)号：US20070298564A1
公开(公告)日：2007-12-27
申请号：US11765323
申请日：2007-06-19
申请人： Berinder P. S. Brar , Wonill Ha
发明人： Berinder P. S. Brar , Wonill Ha
IPC分类号： H01L21/8238
CPC分类号： H01L27/0629 , H01L29/872
摘要： A semiconductor device, a method of forming the same, and a power converter including the semiconductor device. In one embodiment, the semiconductor device includes a heavily doped substrate, a source/drain contact below the heavily doped substrate, and a channel layer above the heavily doped substrate. The semiconductor device also includes a heavily doped source/drain layer above the channel layer and another source/drain contact above the heavily doped source/drain layer. The semiconductor device further includes pillar regions through the another source/drain contact, the heavily doped source/drain layer, and portions of the channel layer to form a vertical cell therebetween. Non-conductive regions of the semiconductor device are located in the portions of the channel layer within the pillar regions. The semiconductor device still further includes a gate above the non-conductive regions in the pillar regions. The semiconductor device may also include a Schottky diode including the channel layer and a Schottky contact.

5. 发明授权

US07655963B2 Semiconductor device including a lateral field-effect transistor and Schottky diode 有权
标题翻译：包括横向场效应晶体管和肖特基二极管的半导体器件
公开(公告)号：US07655963B2
公开(公告)日：2010-02-02
申请号：US11866270
申请日：2007-10-02
申请人： Mariam Gergi Sadaka , Berinder P. S. Brar , Wonill Ha , Chanh Ngoc Minh Nguyen
发明人： Mariam Gergi Sadaka , Berinder P. S. Brar , Wonill Ha , Chanh Ngoc Minh Nguyen
IPC分类号： H01L31/0328
CPC分类号： H01L29/7783 , H01L27/0605 , H01L27/0629 , H01L27/0727 , H01L29/66462 , H01L29/872
摘要： A semiconductor device including a lateral field-effect transistor and Schottky diode and method of forming the same. In one embodiment, the lateral field-effect transistor includes a buffer layer having a contact covering a substantial portion of a bottom surface thereof, a lateral channel above the buffer layer, another contact above the lateral channel, and an interconnect that connects the lateral channel to the buffer layer. The semiconductor device also includes a Schottky diode parallel-coupled to the lateral field-effect transistor including a cathode formed from another buffer layer interposed between the buffer layer and the lateral channel, a Schottky interconnect interposed between the another buffer layer and the another contact, and an anode formed on a surface of the Schottky interconnect operable to connect the anode to the another contact. The semiconductor device may also include an isolation layer interposed between the buffer layer and the lateral channel.
摘要翻译：包括横向场效应晶体管和肖特基二极管的半导体器件及其形成方法。在一个实施例中，横向场效应晶体管包括缓冲层，该缓冲层具有覆盖其底表面的大部分的接触，缓冲层上方的横向通道，横向通道上方的另一接触件以及将侧向通道到缓冲层。半导体器件还包括并联耦合到横向场效应晶体管的肖特基二极管，该晶体管包括由介于缓冲层和横向沟道之间的另一个缓冲层形成的阴极，插入另一个缓冲层和另一个触点之间的肖特基互连，以及形成在所述肖特基互连件的表面上的阳极，其可操作以将所述阳极连接到所述另一个触点。半导体器件还可以包括插入在缓冲层和横向沟道之间的隔离层。

6. 发明授权

US07642568B2 Semiconductor device having substrate-driven field-effect transistor and Schottky diode and method of forming the same 有权
标题翻译：具有基板驱动场效应晶体管和肖特基二极管的半导体器件及其形成方法
公开(公告)号：US07642568B2
公开(公告)日：2010-01-05
申请号：US11876581
申请日：2007-10-22
申请人： Berinder P. S. Brar , Wonill Ha
发明人： Berinder P. S. Brar , Wonill Ha
IPC分类号： H01L31/0328
CPC分类号： H01L29/7783 , H01L27/0605 , H01L27/0629 , H01L27/0727 , H01L29/66462 , H01L29/872
摘要： A semiconductor device including a substrate-driven field-effect transistor with a lateral channel and a parallel-coupled Schottky diode, and a method of forming the same. In one embodiment, the substrate-driven field-effect transistor of the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof, and a lateral channel above the conductive substrate. The substrate-driven field-effect transistor also includes a second contact above the lateral channel and an interconnect that connects the lateral channel to the conductive substrate operable to provide a low resistance coupling between the first contact and the lateral channel. The semiconductor device also includes a Schottky diode parallel-coupled to the substrate-driven field-effect transistor. A first and second terminal of the Schottky diode are couplable to the first and second contacts, respectively, of the substrate drive field-effect transistor.
摘要翻译：一种包括具有横向沟道和平行耦合肖特基二极管的衬底驱动场效应晶体管的半导体器件及其形成方法。在一个实施例中，半导体器件的衬底驱动场效应晶体管包括具有覆盖其底表面的大部分的第一触点和导电衬底上方的横向沟道的导电衬底。衬底驱动场效应晶体管还包括位于横向沟道上方的第二接触件和将横向通道连接到导电衬底的互连件，可操作以在第一接触件和横向通道之间提供低电阻耦合。半导体器件还包括并联耦合到衬底驱动场效应晶体管的肖特基二极管。肖特基二极管的第一和第二端子分别耦合到衬底驱动场效应晶体管的第一和第二触点。

7. 发明授权

US07541640B2 Vertical field-effect transistor and method of forming the same 有权
标题翻译：垂直场效应晶体管及其形成方法
公开(公告)号：US07541640B2
公开(公告)日：2009-06-02
申请号：US11765324
申请日：2007-06-19
申请人： Berinder P. S. Brar , Wonill Ha
发明人： Berinder P. S. Brar , Wonill Ha
IPC分类号： H01L29/732
CPC分类号： H01L29/66856 , H01L29/47 , H01L29/8122 , H01L29/872
摘要： A semiconductor device, a method of forming the same, and a power converter including the semiconductor device. In one embodiment, the semiconductor device includes a heavily doped substrate, a source/drain contact below the heavily doped substrate, and a channel layer above the heavily doped substrate. The semiconductor device also includes a heavily doped source/drain layer above the channel layer and another source/drain contact above the heavily doped source/drain layer. The semiconductor device further includes pillar regions through the another source/drain contact, the heavily doped source/drain layer, and portions of the channel layer to form a vertical cell therebetween. Non-conductive regions of the semiconductor device are located in the portions of the channel layer within the pillar regions. The semiconductor device still further includes a gate above the non-conductive regions in the pillar regions. The semiconductor device may also include a Schottky diode including the channel layer and a Schottky contact.
摘要翻译：半导体器件，其形成方法以及包括半导体器件的功率转换器。在一个实施例中，半导体器件包括重掺杂衬底，重掺杂衬底下面的源极/漏极接触以及重掺杂衬底之上的沟道层。半导体器件还包括在沟道层上方的重掺杂源极/漏极层以及重掺杂源极/漏极层上方的另一个源极/漏极接触。该半导体器件还包括通过另一个源/漏接触，重掺杂源/漏层和沟道层的部分的柱区域，以在其间形成垂直单元。半导体器件的非导电区域位于柱状区域内的沟道层的部分。半导体器件还包括在柱状区域中的非导电区域之上的栅极。半导体器件还可以包括包括沟道层和肖特基接触的肖特基二极管。

8. 发明授权

US07462891B2 Semiconductor device having an interconnect with sloped walls and method of forming the same 失效
标题翻译：具有与倾斜壁相互连接的半导体器件及其形成方法
公开(公告)号：US07462891B2
公开(公告)日：2008-12-09
申请号：US11236376
申请日：2005-09-27
申请人： Berinder P. S. Brar , Wonill Ha , James L. Vorhaus
发明人： Berinder P. S. Brar , Wonill Ha , James L. Vorhaus
IPC分类号： H01L31/0328
CPC分类号： H01L29/41766 , H01L21/28575
摘要： A semiconductor device having at least one lateral channel with contacts on opposing surfaces thereof and a method of forming the same. In one embodiment, the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes a lateral channel above the conductive substrate. The semiconductor device further includes a second contact above the lateral channel. The semiconductor device still further includes an interconnect having a sloped wall that connects the lateral channel to the conductive substrate. The interconnect is operable to provide a low resistance coupling between the first contact and the lateral channel. In a related but alternative embodiment, the first contact is a source contact and the second contact is a drain contact for the semiconductor device.
摘要翻译：一种具有至少一个侧面通道的半导体器件及其相对表面上的触点及其形成方法。在一个实施例中，半导体器件包括具有覆盖其底表面的实质部分的第一触点的导电衬底。半导体器件还包括在导电衬底上方的横向沟道。半导体器件还包括位于横向沟道上方的第二接触。半导体器件还包括具有将横向沟道连接到导电衬底的倾斜壁的互连。互连可操作以在第一接触和横向通道之间提供低电阻耦合。在相关但替代实施例中，第一触点是源触点，第二触点是用于半导体器件的漏极触点。

9. 发明授权

US07838905B2 Semiconductor device having multiple lateral channels and method of forming the same 有权
标题翻译：具有多个横向通道的半导体器件及其形成方法
公开(公告)号：US07838905B2
公开(公告)日：2010-11-23
申请号：US12034746
申请日：2008-02-21
申请人： Berinder P. S. Brar , Wonill Ha
发明人： Berinder P. S. Brar , Wonill Ha
IPC分类号： H01L31/0328
CPC分类号： H01L29/7783 , H01L29/1029 , H01L29/41766 , H01L29/66462
摘要： A semiconductor device having multiple lateral channels with contacts on opposing surfaces thereof and a method of forming the same. In one embodiment, the semiconductor device includes a conductive substrate having a first contact covering a substantial portion of a bottom surface thereof. The semiconductor device also includes a first lateral channel above the conductive substrate and a second lateral channel above the first lateral channel. The semiconductor device further includes a second contact above the second lateral channel. The semiconductor device still further includes an interconnect that connects the first and second lateral channels to the conductive substrate operable to provide a low resistance coupling between the first contact and the first and second lateral channels.
摘要翻译：一种半导体器件，具有在其相对表面上具有接触的多个侧向通道及其形成方法。在一个实施例中，半导体器件包括具有覆盖其底表面的实质部分的第一触点的导电衬底。半导体器件还包括在导电衬底上方的第一横向沟道和在第一横向沟道上方的第二横向沟道。半导体器件还包括在第二侧向通道上方的第二接触。半导体器件还包括将第一和第二横向沟道连接到导电衬底的互连，其可操作以在第一接触和第一和第二横向通道之间提供低电阻耦合。

10. 发明授权

US07663183B2 Vertical field-effect transistor and method of forming the same 有权
标题翻译：垂直场效应晶体管及其形成方法
公开(公告)号：US07663183B2
公开(公告)日：2010-02-16
申请号：US11765323
申请日：2007-06-19
申请人： Berinder P. S. Brar , Wonill Ha
发明人： Berinder P. S. Brar , Wonill Ha
IPC分类号： H01L29/732 , H01L21/8238
CPC分类号： H01L27/0629 , H01L29/872
摘要： A semiconductor device, a method of forming the same, and a power converter including the semiconductor device. In one embodiment, the semiconductor device includes a heavily doped substrate, a source/drain contact below the heavily doped substrate, and a channel layer above the heavily doped substrate. The semiconductor device also includes a heavily doped source/drain layer above the channel layer and another source/drain contact above the heavily doped source/drain layer. The semiconductor device further includes pillar regions through the another source/drain contact, the heavily doped source/drain layer, and portions of the channel layer to form a vertical cell therebetween. Non-conductive regions of the semiconductor device are located in the portions of the channel layer within the pillar regions. The semiconductor device still further includes a gate above the non-conductive regions in the pillar regions. The semiconductor device may also include a Schottky diode including the channel layer and a Schottky contact.
摘要翻译：半导体器件，其形成方法以及包括半导体器件的功率转换器。在一个实施例中，半导体器件包括重掺杂衬底，重掺杂衬底下面的源极/漏极接触以及重掺杂衬底之上的沟道层。半导体器件还包括在沟道层上方的重掺杂源极/漏极层以及重掺杂源极/漏极层上方的另一个源极/漏极接触。该半导体器件还包括通过另一个源/漏接触，重掺杂源/漏层和沟道层的部分的柱区域，以在其间形成垂直单元。半导体器件的非导电区域位于柱状区域内的沟道层的部分。半导体器件还包括在柱状区域中的非导电区域之上的栅极。半导体器件还可以包括包括沟道层和肖特基接触的肖特基二极管。

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